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61. 发明授权

US5498507A Optical recording media 失效
标题翻译：光记录媒体
公开(公告)号：US5498507A
公开(公告)日：1996-03-12
申请号：US394817
申请日：1995-02-27
申请人： Tokuhiko Handa , Ryo Inaba , Susumu Haratani , Junji Tominaga
发明人： Tokuhiko Handa , Ryo Inaba , Susumu Haratani , Junji Tominaga
IPC分类号： B41M5/26 , G11B7/0055 , G11B7/006 , G11B7/24 , G11B7/243 , G11B7/254
CPC分类号： G11B7/257 , G11B7/243 , G11B2007/24306 , G11B2007/24308 , G11B2007/24312 , G11B2007/24314 , G11B2007/24316 , G11B7/006 , G11B7/258 , G11B7/266 , Y10S430/146
摘要： In a phase change type of optical recording medium including on a substrate a lower dielectric layer, a recording layer, a first upper dielectric layer contiguous to said recording layer, a second upper dielectric layer and a reflective layer, the recording layer comprises a recording material containing an element A that represents silver and/or gold, an element B that represents antimony and/or bismuth, an element C that represents tellurium and/or selenium, an element indium, and an element M that represents at least one element selected from the group consisting of titanium, zirconium, hafnium, vanadium, niobium, tantalum, manganese, tungsten and molybdenum, with the atomic ratio of the elements in said recording material having the following formula:{(A.sub.a B.sub.b C.sub.1-a-b).sub.x (In.sub.0.5 C.sub.0.5).sub.y B.sub.1-x-y }.sub.1-z M.sub.zwherein 0.10.ltoreq.a.ltoreq.0.40, 0.10.ltoreq.b.ltoreq.0.40, 0.20.ltoreq.x.ltoreq.0.80, 0.01.ltoreq.y.ltoreq.0.60, and 0.001.ltoreq.z.ltoreq.0.20. The first upper dielectric layer contains at least one compound selected from the group consisting of aluminum nitride, silicone nitride and aluminum oxide. The second upper dielectric layer is made up of a material that has a thermal conductivity lower than that of said first upper dielectric layer.
摘要翻译：在包括在基底上的下介电层，记录层，与所述记录层邻接的第一上电介质层，第二上电介质层和反射层的相变型光记录介质中，所述记录层包括记录材料含有表示银和/或金的元素A，表示锑和/或铋的元素B，表示碲和/或硒的元素C，元素铟和元素M，其表示选自以下的至少一种元素：由钛，锆，铪，钒，铌，钽，锰，钨和钼组成的组，所述记录材料中的元素的原子比具有下式：{（AaBbC1-ab）x（In0.5C0。 5）yB1-xy} 1-zMz其中0.10≤i≤0.40,0.10≤b≤0.40,0.20≤x≤0.80,0.01≤y≤0.60，和0.001≤z≤0.20。第一上介电层包含至少一种选自氮化铝，氮化硅和氧化铝的化合物。第二上介电层由热导率低于所述第一上电介质层的材料构成。

62. 发明授权

US5334433A Optical recording medium 失效
标题翻译：光记录介质
公开(公告)号：US5334433A
公开(公告)日：1994-08-02
申请号：US996821
申请日：1992-12-28
申请人： Junji Tominaga
发明人： Junji Tominaga
IPC分类号： G11B7/24 , G11B7/243 , G11B7/257 , G11B7/258 , B32B3/00
CPC分类号： G11B7/00452 , G11B7/24 , G11B7/243 , G11B7/257 , G11B7/258 , G11B2007/24306 , G11B2007/24308 , G11B2007/2432 , G11B2007/24322 , G11B2007/25706 , G11B2007/25708 , G11B2007/2571 , G11B2007/25716 , G11B2007/25718 , Y10S428/913 , Y10S430/146 , Y10T428/31678
摘要： The optical recording medium of the invention comprises a dielectric thin film 3, a recording thin film 4, and a reflective thin film 5 stacked on a surface of a substrate 2, the recording thin film 4 containing an inorganic compound which decomposes to release a gas upon heating. The medium can be used as a write-once type optical recording disk. The use of inorganic material to form the recording thin film provides improved light resistance and the dielectric thin film disposed between the substrate and the recording thin film prevents entry of water vapor and oxygen from the substrate side, ensuring long-term reliable storage both before and after recording. The use of a shape memory alloy to form the reflective thin film provides high recording sensitivity, allowing for recording with laser light at a low power of up to 8 mW, for example. Low power recording at 6 mW or less is possible particularly when a low-melting thin film is provided between the dielectric thin film and the recording thin film.
摘要翻译：本发明的光记录介质包括层叠在基板2的表面上的介电薄膜3，记录薄膜4和反射薄膜5，记录薄膜4含有分解释放气体的无机化合物加热时。该介质可以用作一次写入型光记录盘。使用无机材料形成记录薄膜提供改进的耐光性，并且设置在基板和记录薄膜之间的电介质薄膜防止水蒸汽和氧从基板侧进入，确保在以前和录制后使用形状记忆合金来形成反射薄膜提供了高记录灵敏度，例如允许以高达8mW的低功率的激光进行记录。特别是当在电介质薄膜和记录薄膜之间设置低熔点薄膜时，特别是6mW以下的低功率记录是可能的。

63. 发明授权

US09029068B2 Phase change device having phase change recording film, and phase change switching method for phase change recording film 有权
标题翻译：具有相变记录膜的相变装置和相变记录膜的相变切换方法
公开(公告)号：US09029068B2
公开(公告)日：2015-05-12
申请号：US13503346
申请日：2010-08-09
申请人： Muneaki Hase , Kotaro Makino , Junji Tominaga
发明人： Muneaki Hase , Kotaro Makino , Junji Tominaga
IPC分类号： G11B7/24 , G11C13/00 , G11B7/0045 , G11B7/1395 , G11C13/04 , H01L45/00 , G11B7/243 , G02B26/00 , H01S3/00
CPC分类号： G11C13/0004 , G02B26/001 , G11B7/00454 , G11B7/00456 , G11B7/1395 , G11B7/243 , G11B2007/24316 , G11C13/04 , H01L45/06 , H01L45/144 , H01S3/0057
摘要： Allowing the rate of phase change to be controlled at the time period of phonons (approx. 270 fs) for the purpose of achieving a substantially higher recording-erasing speed compared to what can be achieved with conventional technologies relating to optical recording media using phase change. A femtosecond pulse laser is shaped into pulse trains each having a first pulse and a second pulse using a Michelson interferometer, and the time interval of first and second pulses is matched with the time period of lattice vibration of a material constituting the phase change recording film to be irradiated, thereby inducing phase change.
摘要翻译：为了实现与使用相变光学记录介质有关的常规技术可实现的记录擦除速度，可以在声子（约270 fs）的时间段内控制相位变化率。使用迈克尔逊干涉仪将飞秒脉冲激光器形成为具有第一脉冲和第二脉冲的脉冲串，并且将第一和第二脉冲的时间间隔与构成相变记录膜的材料的晶格振动的时间段相匹配被照射，从而引起相变。

64. 发明授权

US08530314B2 Solid-state memory manufacturing method 有权
标题翻译：固态存储器制造方法
公开(公告)号：US08530314B2
公开(公告)日：2013-09-10
申请号：US12998482
申请日：2009-09-28
申请人： Junji Tominaga , Takayuki Shima , Alexander Kolobov , Paul Fons , Robert Simpson , Reiko Kondo
发明人： Junji Tominaga , Takayuki Shima , Alexander Kolobov , Paul Fons , Robert Simpson , Reiko Kondo
IPC分类号： H01L21/336
CPC分类号： H01L45/1625 , H01L45/06 , H01L45/144
摘要： A method of at least one embodiment of the present invention of manufacturing a solid-state memory is a method of manufacturing a solid-state memory, the solid-state memory including a recording film whose electric characteristics are varied by phase transformation, the method including: forming the recording film by forming a laminate of two or more layers so that a superlattice structure is provided, each of the layers having a parent phase which shows solid-to-solid phase-transformation, the recording film being formed at a temperature not lower than a temperature highest among crystallization temperatures of the parent phases. It is thus possible to manufacture a solid-state memory which requires lower current for recording and erasing data and has a greater rewriting cycle number.
摘要翻译：制造固态存储器的本发明的至少一个实施例的方法是制造固态存储器的方法，该固态存储器包括其电特性通过相变而变化的记录膜，该方法包括：通过形成两层或更多层的叠层来形成记录膜，从而提供超晶格结构，每个层具有显示固 - 相相变的母相，记录膜在不是的温度下形成低于母相结晶温度的最高温度。因此，可以制造需要较低电流记录和擦除数据的固态存储器，并具有更大的重写周期数。

65. 发明申请

US20100284218A1 SUPERLATTICE DEVICE, MANUFACTURING METHOD THEREOF, SOLID-STATE MEMORY INCLUDING SUPERLATTICE DEVICE, DATA PROCESSING SYSTEM, AND DATA PROCESSING DEVICE 失效
标题翻译：超级设备，其制造方法，包括超级设备的固态存储器，数据处理系统和数据处理设备
公开(公告)号：US20100284218A1
公开(公告)日：2010-11-11
申请号：US12772340
申请日：2010-05-03
申请人： Kazuo AIZAWA , Isamu Asano , Junji Tominaga , Alexander Kolobov , Paul Fons , Robert Simpson
发明人： Kazuo AIZAWA , Isamu Asano , Junji Tominaga , Alexander Kolobov , Paul Fons , Robert Simpson
IPC分类号： G11C11/34 , H01L29/66 , H01L21/06 , G11C29/00
CPC分类号： G11C13/0004 , G11C2213/55 , G11C2213/72 , G11C2213/79 , H01L45/065 , H01L45/144 , H01L45/1625
摘要： To include a superlattice laminate having laminated thereon a first crystal layer of which crystal lattice is a cubic crystal and in which positions of constituent atoms are reversibly replaced by application of energy, and a second crystal layer having a composition different from that of the first crystal layer, and an orientation layer that is an underlaying layer of the superlattice laminate and causes a laminated surface of the first crystal layer to be (111)-orientated. According to the present invention, the laminated surface of the first crystal layer can be (111)-orientated by using the orientation layer as an underlaying layer. In the first crystal layer of which laminated surface is (111)-orientated, a crystal structure reversibly changes when a relatively low energy is applied. Therefore, characteristics of a superlattice device having this crystal layer can be enhanced.
摘要翻译：为了包括其上层压有晶格为立方晶的第一晶体层，其中构成原子的位置被能量可逆地替代的超晶格层压体，以及具有与第一晶体不同的组成的第二晶体层层，以及作为超晶格层叠体的垫层的取向层，使第一结晶层的层叠表面（111）取向。根据本发明，通过使用取向层作为底层，第一晶体层的层叠表面可以是（111）取向的。在层叠表面为（111）取向的第一晶体层中，当施加相对低的能量时，晶体结构可逆地变化。因此，可以提高具有该晶体层的超晶格器件的特性。

66. 发明申请

US20100200828A1 SOLID MEMORY 审中-公开
标题翻译：固体存储器
公开(公告)号：US20100200828A1
公开(公告)日：2010-08-12
申请号：US12733296
申请日：2008-06-13
申请人： Junji Tominaga , James Paul Fons , Alexander Kolobov
发明人： Junji Tominaga , James Paul Fons , Alexander Kolobov
IPC分类号： H01L45/00
CPC分类号： G11C13/0009 , B82Y10/00 , G11B7/2433 , G11B2007/24312 , G11B2007/24314 , G11B2007/24316 , H01L29/15 , H01L29/18 , H01L45/06 , H01L45/144 , H01L45/1625
摘要： In one embodiment of the present invention, recording and erasing of data in PRAM have hitherto been performed based on a change in physical characteristics caused by primary phase-transformation of a crystalline state and an amorphous state of a chalcogen compound including Te which serves as a recording material. Since, however, a recording thin film is formed of a polycrystal but not a single crystal, a variation in resistance values occurs and a change in volume caused upon phase-transition has placed a limit on the number of times of readout of record. In one embodiment, the above problem is solved by preparing a solid memory having a superlattice structure of thin films including Ge and thin films including Sb. The solid memory can realize the number of times of repeated recording and erasing of 1015.
摘要翻译：在本发明的一个实施例中，迄今为止，已经基于由结晶态的初相相变和包括Te的硫族元素化合物的无定形状态引起的物理特性的变化来执行PRAM中的数据的记录和擦除录音材料。然而，由于记录薄膜由多晶而不是单晶形成，所以发生电阻值的变化，并且由相变引起的体积变化对记录的读出次数设定了限制。在一个实施例中，通过制备具有包括Ge的薄膜和包括Sb的薄膜的超晶格结构的固体存储器来解决上述问题。固态存储器可以实现1015次重复记录和擦除次数。

67. 发明申请

US20100181548A1 SOLID-STATE MEMORY AND SEMICONDUCTOR DEVICE 失效
标题翻译：固体存储器和半导体器件
公开(公告)号：US20100181548A1
公开(公告)日：2010-07-22
申请号：US12690711
申请日：2010-01-20
申请人： Junji Tominaga , Takayuki Shima , Alexander Kolobov , Paul Fons , Robert Simpson
发明人： Junji Tominaga , Takayuki Shima , Alexander Kolobov , Paul Fons , Robert Simpson
IPC分类号： H01L45/00 , H01L29/18
CPC分类号： H01L45/1625 , H01L45/06 , H01L45/1233 , H01L45/144
摘要： A solid memory may include a recording layer including Ge, Sb and Te as major components. The recording layer may include a superlattice. The recording layer may include multi-layers each having a parent phase showing a phase transformation in solid-states, the phase transformation causing change in electrical property of the recording layer. The recording layer may include an Sb2Te3 layer that includes at least one period of a first lamination of a first Te-atomic layer, a first Sb-atomic layer, a second Te-atomic layer, a second Sb-atomic layer, and a third Te-atomic layer in these order, a GeTe layer that includes at least one period of a second lamination of a fourth Te-atomic layer and a Ge-atomic layer, and an Sb layer that includes a plurality of Sb-atomic layers.
摘要翻译：固体存储器可以包括包括Ge，Sb和Te作为主要成分的记录层。记录层可以包括超晶格。记录层可以包括多层，每层具有显示固态相变的母相，该相变引起记录层的电性能的变化。记录层可以包括Sb 2 Te 3层，其包括第一Te原子层，第一Sb原子层，第二Te原子层，第二Sb原子层和第三Te原子层的第一层叠的至少一个周期 Te原子层，包括第四Te原子层和Ge原子层的第二层叠的至少一个周期的GeTe层和包括多个Sb原子层的Sb层。

68. 发明授权

US07435468B2 Multi-layer structure and method of drawing microscopic structure therein, optical disc master and method of fabricating the same using the multi-layer structure, and optical disc manufactured using the optical disc master 失效
标题翻译：多层结构及其微观结构的绘制方法，光盘主机及其制造方法使用多层结构，以及使用光盘主机制造的光盘
公开(公告)号：US07435468B2
公开(公告)日：2008-10-14
申请号：US10849522
申请日：2004-05-20
申请人： Joo-ho Kim , In-sik Park , Masashi Kuwahara , Junji Tominaga , Takayuki Sima
发明人： Joo-ho Kim , In-sik Park , Masashi Kuwahara , Junji Tominaga , Takayuki Sima
IPC分类号： B32B9/00
CPC分类号： G11B7/00452 , G11B7/261 , G11B7/263 , Y10S428/913
摘要： A multi-layer structure whose volume changes when a temperature exceeds a predetermined threshold value, a microscopic structure drawing method that involves emitting a laser beam onto the multi-layer structure to create a temperature distribution within a beam spot and performing microscopic recording on a portion of the beam spot having a temperature higher than the threshold value, an optical disc master, and a mastering method using the same, where the multi-layer structure includes a substrate and a transformation layer formed on the substrate, wherein a volume of a portion of the transformation layer irradiated by a laser beam changes when the temperature of the portion exceeds a predetermined temperature. The microscopic structure drawing method includes emitting the laser beam onto a predetermined region of the transformation layer and heating the region of the transformation layer irradiated by the laser beam beyond a predetermined temperature so that the heated region can undergo a volume change.
摘要翻译：一种当温度超过预定阈值时其体积变化的多层结构，涉及在多层结构上发射激光以产生束斑内的温度分布并在部分上进行微观记录的显微结构拉伸方法具有温度高于阈值的光斑，光盘母盘及其使用方法，其中所述多层结构包括衬底和形成在所述衬底上的相变层，其中所述部分的体积当部分的温度超过预定温度时，由激光束照射的变换层的变化将发生变化。微观结构绘制方法包括将激光束发射到转变层的预定区域上，并将由激光束照射的相变层的区域加热超过预定温度，使得加热区域能够经历体积变化。

69. 发明申请

US20060234168A1 Pattern forming materials and pattern formation method using the materials 有权
标题翻译：图案形成材料和图案形成方法使用材料
公开(公告)号：US20060234168A1
公开(公告)日：2006-10-19
申请号：US10531897
申请日：2003-10-20
申请人： Joo-Ho Kim , Junji Tominaga
发明人： Joo-Ho Kim , Junji Tominaga
IPC分类号： G03C5/00
CPC分类号： G11B7/261 , B41M5/26 , B41M5/368 , B41M5/46 , B41M5/465
摘要： A pattern forming materials includes a thermal sensitive material layer formed on a target substrate, a first light-to-heat converting layer formed between the thermal sensitive material layer and the target substrate, and a second light-to-heat converting layer formed on a surface of the thermal sensitive material layer opposite to the first light-to-heat converting layer, the thermal sensitive material layer being interposed between the first and second light-to-heat converting layers. A higher aspect ratio fine pattern can be formed in the thermal sensitive material layer made of photoresist using heat generated in the first and second light-to-heat converting layers formed on both surfaces of the thermal sensitive material layer.
摘要翻译：图案形成材料包括形成在目标基板上的热敏材料层，形成在热敏材料层和目标基板之间的第一光热转换层和形成在热敏材料层上的第二光热转换层所述热敏材料层的表面与所述第一光热转换层相对，所述热敏材料层插入在所述第一和第二光热转换层之间。可以在形成在热敏材料层的两个表面上的第一和第二光热转换层中产生的热量的光致抗蚀剂材料层中形成更高的纵横比精细图案。

70. 发明申请

US20060147757A1 High density recording medium with super-resolution near-field structure manufactured using high-melting point metal oxide or silicon oxide mask layer 有权
标题翻译：使用高熔点金属氧化物或氧化硅掩模层制造的具有超分辨率近场结构的高密度记录介质
公开(公告)号：US20060147757A1
公开(公告)日：2006-07-06
申请号：US10529044
申请日：2003-09-24
申请人： Joo-Ho Kim , Junji Tominaga
发明人： Joo-Ho Kim , Junji Tominaga
IPC分类号： G11B5/66
CPC分类号： B82Y10/00 , G11B7/24 , G11B7/258 , G11B2007/24312 , G11B2007/24314 , G11B2007/24316
摘要： A high density recording medium with a super-resolution near-field structure including a mask layer comprising high melting point metal oxide or silicon oxide. A high density recording medium with a super-resolution near-field structure includes a sequential stack of a second dielectric layer, a recording layer, a protective layer, a mask layer, a first dielectric layer, and a polycarbonate layer, wherein the mask layer comprises high melting point metal oxide or silicon oxide to generate a near field by optically or thermally inducing physical changes in the crystalline structure and optical properties of the high melting point metal oxide or silicon oxide.
摘要翻译：一种具有包括高熔点金属氧化物或氧化硅的掩模层的超分辨率近场结构的高密度记录介质。具有超分辨率近场结构的高密度记录介质包括第二介电层，记录层，保护层，掩模层，第一介电层和聚碳酸酯层的顺序堆叠，其中掩模层包括高熔点金属氧化物或氧化硅，以通过光学或热诱导高熔点金属氧化物或氧化硅的晶体结构和光学性质的物理变化产生近场。

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