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61. 发明授权

US6057565A Semiconductor light emitting device including a non-stoichiometric compound layer and manufacturing method thereof 失效
标题翻译：包括非化学计量的化合物层的半导体发光器件及其制造方法
公开(公告)号：US6057565A
公开(公告)日：2000-05-02
申请号：US937166
申请日：1997-09-25
申请人： Hiroaki Yoshida , Masayuki Ishikawa , Hidetoshi Fujimoto , Yoshihiro Kokubun , Genichi Hatakoshi
发明人： Hiroaki Yoshida , Masayuki Ishikawa , Hidetoshi Fujimoto , Yoshihiro Kokubun , Genichi Hatakoshi
IPC分类号： H01L33/14 , H01L33/32 , H01L33/00
CPC分类号： H01L33/32 , H01L33/14 , H01L33/325
摘要： In the semiconductor light emitting device, a high resistance layer formed by mutual diffusion at an interface with the substrate crystal can be eliminated, and a low resistance p-type contact can be realized. In addition, it is possible to reduce the leak current when an internal current-blocking structure is formed. In practice, a compound semiconductor layer offset in composition ratio stoichiometrically is used as the contact layer. Further, when a predetermined element is added to the contact layer, a large amount of doping can be enabled in comparison with when impurities are added to the ordinary GaN based layer. Therefore, a high concentration conductive type layer can be realized while reducing the contact resistance. In addition, when the compound semiconductor layer offset away from the stoichiometric composition is used as the current-blocking layer, the current-blocking efficiency can be improved. Further, when the substrate is irradiated with light having energy slightly higher than that of the band gap of the grown crystal in the photo-excitation MOCVD method in order to eliminate the rough surface, it is possible to realize the p-type conductive of high carrier concentration.
摘要翻译：在半导体发光器件中，可以消除在与衬底晶体的界面处相互扩散形成的高电阻层，并且可以实现低电阻p型接触。此外，当形成内部阻流结构时，可以减小泄漏电流。实际上，化学计量组成比偏移的化合物半导体层用作接触层。此外，当向接触层添加预定元素时，与将杂质添加到普通的GaN基层相比，可以实现大量的掺杂。因此，可以在降低接触电阻的同时实现高浓度导电型层。另外，当偏离化学计量组成的化合物半导体层用作电流阻挡层时，可以提高电流阻挡效率。此外，为了消除粗糙表面，为了消除粗糙表面，当在光激发MOCVD方法中照射具有比生长晶体的带隙稍高的光的基板时，可以实现高的p型导电载体浓度。

62. 发明授权

US6040086A Nonaqueous electrolyte secondary battery 失效
标题翻译：非水电解质二次电池
公开(公告)号：US6040086A
公开(公告)日：2000-03-21
申请号：US48785
申请日：1998-03-27
申请人： Hiroaki Yoshida , Zenzo Hagiwara , Masanao Terasaki
发明人： Hiroaki Yoshida , Zenzo Hagiwara , Masanao Terasaki
IPC分类号： H01M4/70 , H01M2/26 , H01M10/04 , H01M10/05 , H01M10/0587
CPC分类号： H01M10/0431 , H01M2/263 , H01M10/05
摘要： A nonaqueous electrolyte secondary battery according to the present invention has a power-generating element and a collector. The power-generating element is provided with a portion where a negative electrode plate and a positive electrode plate are not opposed to each other. In the power-generating element, the electrode plates are wound or laminated through a separation body so that the side edge portion of one of the electrode plates protrudes from that of the other. The collector is connected to the side edge portions. The collector has a plurality of grooves bonded to the side edges of the electrode plates. The bonding is made by at least one of a welding method such as ultrasonic welding method, laser welding method, electric welding method, arc welding method and plasma arc welding method, and a mechanical joint using a rivet, pin or eyelet, or by deforming under pressure the collector to crimp.
摘要翻译：本发明的非水电解质二次电池具有发电元件和集电体。发电元件设置有负极板和正极板彼此不相对的部分。在发电元件中，电极板通过分离体卷绕或层压，使得一个电极板的侧边缘部分突出于另一个电极板的侧边缘部分。收集器连接到侧边缘部分。集电体具有接合到电极板的侧边缘的多个沟槽。通过焊接方法如超声波焊接法，激光焊接法，电焊法，电弧焊法，等离子体电弧焊法等中的至少一种进行接合，使用铆钉，销或孔眼的机械接头，在压力下收集器压接。

63. 发明授权

US5895909A Card and device for processing of same 失效
标题翻译：卡和设备处理相同
公开(公告)号：US5895909A
公开(公告)日：1999-04-20
申请号：US733424
申请日：1996-10-18
申请人： Hiroaki Yoshida
发明人： Hiroaki Yoshida
IPC分类号： G06K7/00 , G06K17/00 , G06K19/04 , G06K19/077 , G06K19/08 , G07F7/10 , G06K19/00
CPC分类号： G07F7/1008 , G06K19/04 , G06K19/077 , G06K19/08 , G06K7/0008 , G06Q20/341 , G06Q20/4097
摘要： A hybrid card and a processing device capable of rapidly identifying a read/write unit corresponding to an IC module from a plurality of read/write units and preventing fraud in respect of the IC module. Identification data identifying the type of an IC module 11a is held in for example a magnetic stripe 11b outside the IC module 11a of a hybrid card 11. Authentication data corresponding to the identification data is held in the IC module 11a. An R/W unit adapted to the IC module 11a is selected in accordance with the identification data read from the location outside the IC module 11a. The identification data read from the location outside the IC module 11a and the authentication data contained in the data read from the IC module 11a are compared and, only if the two agree, the reading from or writing into the an IC read/write unit 130 is permitted.
摘要翻译：一种混合卡和能够从多个读/写单元快速识别对应于IC模块的读/写单元并防止对IC模块的欺诈的处理装置。识别IC模块11a的类型的识别数据被保存在例如混合卡11的IC模块11a外部的磁条11b上。与IC标识数据相对应的认证数据被保存在IC模块11a中。根据从IC模块11a外的位置读取的识别数据，选择适用于IC模块11a的R / W单元。将从IC模块11a外部的位置读取的识别数据和从IC模块11a读取的数据中包含的认证数据进行比较，只有当两者同意从IC读/写单元130读取或写入IC读/写单元130 是允许的。

64. 发明授权

US4758018A Rear wheel suspension arrangement for motor vehicles 失效
标题翻译：汽车后轮悬挂装置
公开(公告)号：US4758018A
公开(公告)日：1988-07-19
申请号：US883098
申请日：1986-07-08
申请人： Shozo Takizawa , Kazuyoshi Kobayashi , Kazuo Fukuyama , Masanori Tani , Shoji Yamamoto , Masayoshi Nishimori , Hiroaki Yoshida , Shinichi Eto
发明人： Shozo Takizawa , Kazuyoshi Kobayashi , Kazuo Fukuyama , Masanori Tani , Shoji Yamamoto , Masayoshi Nishimori , Hiroaki Yoshida , Shinichi Eto
IPC分类号： B60G7/04 , B60G3/20 , B60G7/00 , B62D7/14 , B60G3/28
CPC分类号： B60G7/006 , B60G3/202 , B60G7/00 , B62D7/146 , B60G2200/44 , B60G2200/462 , B60G2202/413 , B60G2204/14 , B60G2204/422 , B60G2206/121 , B60G2800/962
摘要： A rear wheel suspension arrangement of trailing arm type for motor vehicles includes a trailing arm for supporting a rear wheel, and a pair of upper and lower lateral arms. The trailing arm is split into a vehicle body side arm and a wheel side arm, which are coupled to have a degree of displacing freedoms within a horizontal plane of the vehicle body. The vehicle body side arm is formed shorter than the lateral arms, whose pivotally securing portion to the vehicle body is disposed at the front side from the coupling portion to the wheel side arm, and disposed in the inside in the lateral direction from the wheel side arm. The lower lateral arm is pivotally secured at least to the wheel side arm via a ball joint.
摘要翻译：用于机动车辆的后臂式后轮悬挂装置包括用于支撑后轮的牵引臂和一对上下侧臂。牵引臂被分成车体侧臂和车轮侧臂，车身侧臂和车轮侧臂联接成在车体的水平面内具有一定程度的移动自由度。车身侧臂形成得比侧臂更短，其侧面臂的枢转固定部分设置在从联接部分到车轮侧臂的前侧，并且从车轮侧沿横向方向设置在内侧臂。下侧臂至少通过球窝接头枢转固定在车轮侧臂上。

65. 发明授权

US09496722B2 Battery system including bypass electrical path and heater bypass electrical path that connects a portion of bypass electrical path upstream relative to a heater to a portion of bypass electrical path downstream relative to the heater 有权
标题翻译：包括旁路电路和加热器旁路电路的电池系统，其将旁路电路的一部分相对于加热器上游到相对于加热器的旁路电路的一部分
公开(公告)号：US09496722B2
公开(公告)日：2016-11-15
申请号：US13388601
申请日：2010-08-04
申请人： Hiroaki Yoshida , Hiroshi Kawamura
发明人： Hiroaki Yoshida , Hiroshi Kawamura
IPC分类号： H02J7/00 , H01M10/625 , H01M10/615 , H01M10/6571 , H01M10/44
CPC分类号： H02J7/0016 , H01M10/441 , H01M10/443 , H01M10/615 , H01M10/625 , H01M10/6571 , H02J7/0026
摘要： A battery system is provided that can prevent overcharging during charging, and that can demonstrate appropriate charging performance and output performance of a secondary battery even when the battery system is used in a low-temperature environment. The battery system includes a secondary battery and a protection circuit. The protection circuit includes a bypass electrical path that connects an upstream-side main electrical path that is connected to a positive terminal of the secondary battery to a downstream-side main electrical path that is connected to a negative terminal of the secondary battery. The battery system is configured so that, when the voltage of the secondary battery exceeds a predetermined voltage during charging, current flowing through the secondary battery decreases while current flowing through the bypass electrical path increases, and when the voltage of the secondary battery falls below the predetermined voltage during charging, the current flowing through the secondary battery increases while the current flowing through the bypass electrical path decreases. The bypass electrical path includes a heater that generates heat using the current flowing through the bypass electrical path, and the heater is arranged adjacent to or in close contact with the secondary battery so as to impart a thermal effect to the secondary battery.
摘要翻译：提供一种电池系统，其可以防止在充电期间的过充电，并且即使在低温环境中使用电池系统的情况下也可以证明适当的充电性能和二次电池的输出性能。电池系统包括二次电池和保护电路。保护电路包括将连接到二次电池的正极端子的上游侧主电路与连接到二次电池的负极端子的下游侧主电路连接的旁路电路。电池系统被配置为使得当充电期间二次电池的电压超过预定电压时，流过二次电池的电流随着流过旁路电路的电流增加而减小，并且当二次电池的电压下降到低于在充电期间的预定电压，流过二次电池的电流增加，同时流过旁路电路的电流减小。旁路电路包括使用流过旁路电路的电流产生热的加热器，并且加热器被布置为与二次电池相邻或紧密接触，以便赋予二次电池热效应。

66. 发明申请

US20150019142A1 DAMAGE EVALUATION METHOD AND MAINTENANCE EVALUATION INDEX DECISION METHOD 有权
标题翻译：损害评估方法和维护评估指标决策方法
公开(公告)号：US20150019142A1
公开(公告)日：2015-01-15
申请号：US14241560
申请日：2012-09-07
申请人： Nobuyoshi Komai , Hiroaki Fukushima , Yuichi Hirakawa , Hiroyuki Ohyama , Takeshi Miyazawa , Hiroaki Yoshida
发明人： Nobuyoshi Komai , Hiroaki Fukushima , Yuichi Hirakawa , Hiroyuki Ohyama , Takeshi Miyazawa , Hiroaki Yoshida
IPC分类号： G01N17/00 , G01N33/20 , G01M3/00
CPC分类号： G01N17/00 , G01M3/00 , G01M5/0033 , G01N33/20 , G01N2203/0296
摘要： A first measured value of a specific physical quantity at a target portion is correlated with a damage evaluation index to calculate a damage degree corresponding to the first measured value. The specific physical quantity is measured at least once at a position corresponding to the first measurement position in another time period having a different usage elapsed time from that of the first measurement, and these second and subsequent measured values are correlated with damage degrees calculated based on temporal changes corresponding to the second and subsequent measurements. A new damage evaluation index is approximately calculated based on a relationship between the first, second, and subsequent measured values and the damage degrees corresponding to the first, second, and subsequent measured values.
摘要翻译：在目标部分处的特定物理量的第一测量值与损伤评估指数相关联，以计算与第一测量值相对应的损伤程度。特定物理量在与第一测量的使用时间不同的另一时间段中的与第一测量位置相对应的位置处至少测量一次，并且这些第二和随后的测量值与基于对应于第二次和随后的测量的时间变化。基于第一，第二和随后的测量值与对应于第一，第二和后续测量值的损伤度之间的关系近似地计算新的损伤评估指数。

67. 发明申请

US20130302660A1 BATTERY SYSTEM 有权
标题翻译：电池系统
公开(公告)号：US20130302660A1
公开(公告)日：2013-11-14
申请号：US13980557
申请日：2012-01-13
申请人： Takeyuki Shiraishi , Hiroaki Yoshida
发明人： Takeyuki Shiraishi , Hiroaki Yoshida
IPC分类号： H01M10/50
CPC分类号： H01M10/61 , H01M2/34 , H01M10/425 , H01M10/441 , H01M10/617 , H01M10/625
摘要： A battery system includes a secondary battery and a bypass circuit provided with a semiconductor switch element, and the secondary battery and the bypass circuit are connected parallely. In this battery system, the semiconductor switch element is attached so as to radiate heat to a surface of a battery outer case of the secondary battery or to a bus bar.
摘要翻译：电池系统包括二次电池和设置有半导体开关元件的旁路电路，二次电池和旁路电路并联连接。在该电池系统中，半导体开关元件被安装为将热量辐射到二次电池的电池外壳的表面或汇流条。

68. 发明申请

US20130168693A1 PROTECTIVE-FILM-ATTACHED COMPOSITE SUBSTRATE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：保护膜连接的复合基板及制造半导体器件的方法
公开(公告)号：US20130168693A1
公开(公告)日：2013-07-04
申请号：US13820599
申请日：2012-02-13
申请人： Issei Satoh , Hiroaki Yoshida , Yoshiyuki Yamamoto , Akihiro Hachigo , Hideki Matsubara
发明人： Issei Satoh , Hiroaki Yoshida , Yoshiyuki Yamamoto , Akihiro Hachigo , Hideki Matsubara
IPC分类号： H01L29/20 , H01L21/02
CPC分类号： H01L29/2003 , H01L21/02104 , H01L21/76254
摘要： A protective-film-attached composite substrate includes a support substrate, an oxide film disposed on the support substrate, a semiconductor layer disposed on the oxide film, and a protective film protecting the oxide film by covering a portion that is a part of the oxide film and covered with none of the support substrate and the semiconductor layer. A method of manufacturing a semiconductor device includes the steps of: preparing the protective-film-attached composite substrate; and epitaxially growing, on the semiconductor layer of the protective-film-attached composite substrate, at least one functional semiconductor layer causing an essential function of a semiconductor device to be performed. Thus, there are provided a protective-film-attached composite substrate having a large effective region where a high-quality functional semiconductor layer can be epitaxially grown, and a method of manufacturing a semiconductor device in which the protective-film-attached composite substrate is used.
摘要翻译：保护膜附着复合基板包括支撑基板，设置在支撑基板上的氧化膜，设置在氧化膜上的半导体层，以及通过覆盖作为氧化物的一部分的部分来保护氧化膜的保护膜并且不覆盖支撑基板和半导体层。制造半导体器件的方法包括以下步骤：制备保护膜附着复合衬底; 并且在保护膜附着复合衬底的半导体层上外延生长至少一个引起半导体器件的基本功能的功能半导体层。因此，提供了可以外延生长高品质功能半导体层的具有大的有效区域的保护膜附着复合基板，以及制造其中保护膜附着复合基板的半导体器件的制造方法用过的。

69. 发明申请

US20130032928A1 GROUP III NITRIDE COMPOSITE SUBSTRATE 审中-公开
标题翻译：第III组氮化物复合基板
公开(公告)号：US20130032928A1
公开(公告)日：2013-02-07
申请号：US13641582
申请日：2011-11-07
申请人： Issei Satoh , Hiroaki Yoshida , Yoshiyuki Yamamoto , Akihiro Hachigo , Hideki Matsubara
发明人： Issei Satoh , Hiroaki Yoshida , Yoshiyuki Yamamoto , Akihiro Hachigo , Hideki Matsubara
IPC分类号： H01L29/20
CPC分类号： H01L21/76254 , H01L21/0242 , H01L21/02488 , H01L21/0254
摘要： A group III nitride composite substrate includes a support substrate, an oxide film formed on the support substrate, and a group III nitride layer formed on the oxide film. The oxide film may be a film selected from the group consisting of a TiO2 film and a SrTiO3 film, and an impurity may be added to the oxide film. Accordingly, the group III nitride composite substrate having a high bonding strength between the support substrate and the group III nitride layer is provided.
摘要翻译： III族氮化物复合衬底包括支撑衬底，形成在支撑衬底上的氧化物膜和形成在氧化物膜上的III族氮化物层。氧化物膜可以是选自TiO 2膜和SrTiO 3膜的膜，并且可以向氧化物膜中添加杂质。因此，提供了在支撑基板和III族氮化物层之间具有高结合强度的III族氮化物复合基板。

70. 发明授权

US08340518B2 PON system, station-side apparatus for PON system, and control method thereof 有权
标题翻译： PON系统，PON系统的站侧装置及其控制方法
公开(公告)号：US08340518B2
公开(公告)日：2012-12-25
申请号：US12677258
申请日：2009-05-28
申请人： Hiroaki Yoshida , Tetsuya Yokomoto , Hiroji Shigetome
发明人： Hiroaki Yoshida , Tetsuya Yokomoto , Hiroji Shigetome
IPC分类号： H04J14/00
CPC分类号： H04L12/2876 , H04L12/2861 , H04L47/10 , H04Q11/0067 , H04Q2011/0064 , H04Q2011/0084
摘要： An OLT, which is one of the embodiments of the present invention, is provided with: an allocation request receiving unit that receives a bandwidth allocation request from each of 1G-ONUs and each of 10G-ONUs; an allocation execution unit that allocates to each of the ONUs a time slot for data transmission in accordance with an allocation rule based on fairness in time allocation or an allocation rule based on fairness in throughput allocation; and an allocation result notification unit that notifies each of the ONUs of information regarding the time slot.
摘要翻译：作为本发明实施例之一的OLT具有：分配请求接收单元，其从1G-ONU和10G-ONU中的每一个接收带宽分配请求; 分配执行单元，其基于在时间分配中的公平性或基于吞吐量分配中的公平性的分配规则，根据分配规则向每个ONU分配用于数据传输的时隙; 以及分配结果通知单元，其向每个ONU通知关于该时隙的信息。

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