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    • 61. 发明授权
    • Floating-point arithmetic unit which specifies a least significant bit to be incremented
    • 指定要递增的最低有效位的浮点运算单元
    • US06314442B1
    • 2001-11-06
    • US09218076
    • 1998-12-22
    • Hiroaki Suzuki
    • Hiroaki Suzuki
    • G06F738
    • G06F7/49963G06F7/483
    • An object is to obtain a floating-point arithmetic unit with improved throughput. The floating-point arithmetic unit comprises a mantissa adder-subtracter portion (MAP) for performing arithmetic operation of mantissa data (A, B) in floating-point data, an increment portion (INP) for performing increment to a bit in the arithmetic result (D) which corresponds to the LSB when it is assumed that the MSB in the arithmetic result (D) is not shifted, a round-off decision portion (RJP) for deciding whether to round up the bit one place lower than the LSB, and a selector (S1) for selectively outputting the arithmetic result from the increment portion (INP) or the arithmetic result (D) from the mantissa adder-subtracter portion (MAP).
    • 目的是获得具有提高的吞吐量的浮点运算单元。 浮点算术单元包括用于在浮点数据中执行尾数数据(A,B)的算术运算的尾数加法器 - 减法器部分(MAP),用于对运算结果中的位执行递增的增量部分(INP) (D)中相当于LSB的(D)对应于运算结果(D)中的MSB未被移位的判定部(RJP),用于判定是否将比特低位低于LSB的四舍五入判定部(RJP) 以及用于从尾数加法器 - 减法器部分(MAP)中选择性地从增量部分(INP)或算术结果(D)输出算术结果的选择器(S1)。
    • 63. 发明授权
    • Color digital image composing apparatus
    • 彩色数字图像合成装置
    • US6002490A
    • 1999-12-14
    • US872548
    • 1997-06-10
    • Hiroaki Suzuki
    • Hiroaki Suzuki
    • H04N1/333H04N1/00H04N1/32
    • H04N1/33307H04N2201/33378
    • The color digital image composing apparatus according to the present invention comprises a memory for storing therein data concerning connection between devices each constituting said apparatus and parameters specific to each device, a registration device for registering the data concerning connection between devices each constituting said apparatus and the parameters specific to each device as system parameters, and a controller for transaction of the system parameters stored in said memory prior to start of facsimile communication, so that image data most suited to capability of the receiving side can be transmitted.
    • 根据本发明的彩色数字图像合成装置包括:存储器,用于存储关于每个构成所述装置的装置和每个装置特有的参数之间的连接的数据;登记装置,用于登记关于在构成所述装置的装置之间的连接的数据;以及 作为系统参数特定于每个设备的参数,以及用于在开始传真通信之前存储在所述存储器中的系统参数的交易的控制器,使得可以发送最适合于接收侧的能力的图像数据。
    • 64. 发明授权
    • Small glass electrode
    • 小玻璃电极
    • US5837113A
    • 1998-11-17
    • US598287
    • 1996-02-08
    • Hiroaki SuzukiAkio SugamaNaomi Kojima
    • Hiroaki SuzukiAkio SugamaNaomi Kojima
    • G01N27/36
    • G01N27/36
    • A small glass electrode and process for preparation thereof, the small glass electrode having a bonded structure and comprising a reference electrode composed of silver/silver chloride, a glass substrate having a pad embedded therein, the pad being composed of gold or platinum and circuit-connected to the reference electrode, and a silicon substrate having a (100) plane selectively etched by the anisotropic etching technique and comprising a groove for injecting an electrolyte composed of an aqueous solution containing chlorine such as KCA, or HCA, at least one hole for holding the electrolyte and a glass film formed in a portion corresponding to the reference electrode. The structure of the small glass electrode may be produced by the disclosed process easily and at low cost. Additionally, the small glass electrode, in differing embodiments, may include a reference electrode and a temperature sensor.
    • 一种小玻璃电极及其制备方法,该小玻璃电极具有接合结构,并且包括由银/氯化银构成的参比电极,具有嵌入其中的焊盘的玻璃基板,该焊盘由金或铂构成, 连接到参考电极,以及具有通过各向异性蚀刻技术选择性地蚀刻的(100)面的硅衬底,并且包括用于注入包含氯的水溶液如KCA或HCA的电解槽,用于至少一个用于 保持电解质和形成在与参考电极相对应的部分中的玻璃膜。 小玻璃电极的结构可以通过公开的方法容易且低成本地制造。 另外,在不同实施例中,小玻璃电极可以包括参考电极和温度传感器。
    • 67. 发明授权
    • Miniaturized oxygen electrode and process of producing same
    • 小型氧电极及其制造方法
    • US5573649A
    • 1996-11-12
    • US430318
    • 1995-04-28
    • Akio SugamaHiroaki SuzukiNaomi Kojima
    • Akio SugamaHiroaki SuzukiNaomi Kojima
    • G01N27/26
    • G01N27/404G01N27/3271Y10S435/817
    • The miniaturized oxygen electrode having a small size exceeding the limit of miniaturization of the prior art electrode comprises an insulating substrate 21, 31 and, provided thereon, a pair of electrode patterns 22, 23 each comprising an active section 22A, 23A, a terminal section 22C, 23C for external connection, and a lead wire portion 22B, 23B for the connection thereof, the active sections 22A, 23A being mutually connected through an electrolyte-containing material 24, the electrolyte-containing material 24 being covered with an oxygen-permeable membrane 28, the lead wire portion 22B of at least one 22 of the electrode patterns extending below the active section 23A of at least one of other electrode patterns, 23, with an insulating layer 29 intervening between the lead wire portion 22B and the active section 23A.
    • 具有超过现有技术电极的小型化的小尺寸的小型氧电极包括绝缘基板21,31,并且在其上设置有一对电极图案22,23,每个电极图案包括有源部分22A,23A,端子部分 22C,23C用于外部连接,以及用于连接的引线部分22B,23B,有源部分22A,23A通过含电解质的材料24相互连接,含电解质的材料24被透氧的 薄膜28,至少一个22个电极图案的引线部分22B延伸到至少一个其它电极图案23的有源部分23A下方,绝缘层29介于导线部分22B和有源部分之间 23A。
    • 69. 发明授权
    • Field programmable gate array transferring signals at high speed
    • 现场可编程门阵列以高速传输信号
    • US5541529A
    • 1996-07-30
    • US450757
    • 1995-05-25
    • Koichiro MashikoHiroaki Suzuki
    • Koichiro MashikoHiroaki Suzuki
    • G11C11/413H03K19/00H03K19/173H03K19/177
    • H03K19/17792H03K19/0013H03K19/1736H03K19/17704
    • A field programmable gate array includes a logic blocks, switching elements for establishing a signal propagation path, and memory cells provided corresponding to the switching elements for storing data determining on and off states of corresponding switching elements. In this gate array, a supply voltage fed to a power input terminal is transmitted to power supply nodes of logic circuit blocks. A booster circuit boosts the supply voltage fed to the power input terminal and feeds the boosted voltage to power supply nodes of memory cells for programming a signal propagation path. A high-level signal potential of each memory cell is fed to the gate of an n-channel MOS transistor which functions as the switching element. The switching elements are disposed on signal lines and serve to interconnect the signal lines selectively to establish a signal propagation path. The current supply capability of the MOS transistors is enhanced to realize faster propagation of the signal, and any harmful influence of the threshold voltage exerted on the signal amplitude loss can be suppressed by a rise of the gate potential in each MOS transistor.
    • 现场可编程门阵列包括逻辑块,用于建立信号传播路径的开关元件,以及与开关元件对应地提供的存储单元,用于存储确定相应开关元件的导通和截止状态的数据。 在该门阵列中,馈送到电力输入端的电源电压被发送到逻辑电路块的电源节点。 升压电路提高馈送到电源输入端的电源电压,并将升压的电压馈送到存储器单元的电源节点,以编程信号传播路径。 每个存储单元的高电平信号电位被馈送到用作开关元件的n沟道MOS晶体管的栅极。 开关元件设置在信号线上并用于选择性地互连信号线以建立信号传播路径。 提高MOS晶体管的电流供应能力以实现信号的更快的传播,并且通过每个MOS晶体管中的栅极电位的上升可以抑制施加在信号幅度损失上的阈值电压的任何有害影响。