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61. 发明申请

US20110052810A1 FILM FORMING METHOD AND STORAGE MEDIUM 审中-公开
标题翻译：电影形成方法和储存媒体
公开(公告)号：US20110052810A1
公开(公告)日：2011-03-03
申请号：US12918152
申请日：2009-02-18
申请人： Yumiko Kawano , Susumu Arima , Akinobu Kakimoto , Toshiyuki Hirota , Takakazu Kiyomura
发明人： Yumiko Kawano , Susumu Arima , Akinobu Kakimoto , Toshiyuki Hirota , Takakazu Kiyomura
IPC分类号： C23C16/22
CPC分类号： H01L21/02197 , C23C16/409 , C23C16/45531 , H01G4/1227 , H01L21/0228 , H01L21/31691 , H01L28/55
摘要： An AxByOz-type oxide film can be produced by introducing a first organic metal compound source material, a second organic metal compound source material and an oxidizer into a processing chamber and forming the AxByOz-type oxide film on a substrate. In the production, a compound which has a low vapor pressure and has an organic ligand capable of being decomposed with an oxidizer to produce CO is used as the first organic metal compound source material, a metal alkoxide is used as the second organic metal compound source material, and gaseous O3 or O2 is used as the oxidizer. It is absolutely necessary to introduce the second organic metal compound source material immediately before the introduction of the oxidizer.
摘要翻译：可以通过将第一有机金属化合物源材料，第二有机金属化合物源材料和氧化剂引入到处理室中并在基板上形成AxByOz型氧化物膜来制造AxByOz型氧化物膜。在制造中，使用具有低蒸气压并具有能够用氧化剂分解以产生CO的有机配体的化合物作为第一有机金属化合物源材料，使用金属醇盐作为第二有机金属化合物源材料和气态O 3或O 2用作氧化剂。在引入氧化剂之前，绝对需要引入第二有机金属化合物源材料。

62. 发明授权

US07816282B2 Method for forming SrTiO3 film 有权
标题翻译：形成SrTiO3薄膜的方法
公开(公告)号：US07816282B2
公开(公告)日：2010-10-19
申请号：US12019262
申请日：2008-01-24
申请人： Yumiko Kawano , Akinobu Kakimoto , Hidekimi Kadokura , Shintaro Higashi
发明人： Yumiko Kawano , Akinobu Kakimoto , Hidekimi Kadokura , Shintaro Higashi
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/409 , C23C16/45531 , C23C16/45553
摘要： A method is used for forming an SrTiO3 film on a substrate placed and heated inside a process chamber while supplying a gaseous Ti source material, a gaseous Sr source material, and a gaseous oxidizing agent into the process chamber. Sr(C5(CH3)5)2 is used as the Sr source material. The method performs a plurality of cycles to form the SrTiO3 film. Each cycle sequentially includes supplying the gaseous Ti source material into the process chamber and thereby adsorbing it onto the substrate; supplying the gaseous oxidizing agent into the process chamber and thereby decomposing the Ti source material thus adsorbed and forming a Ti-containing oxide film; supplying the gaseous Sr source material into the process chamber and thereby adsorbing it onto the Ti-containing oxide film; and supplying the gaseous oxidizing agent into the process chamber and thereby decomposing the Sr source material thus adsorbed and forming an Sr-containing oxide film.
摘要翻译：一种方法用于在加工室内放置并加热的衬底上形成SrTiO 3膜，同时向处理室中供应气态Ti源材料，气态Sr源材料和气态氧化剂。 Sr（C5（CH3）5）2用作Sr源材料。该方法进行多个周期以形成SrTiO 3膜。每个循环依次包括将气态Ti源材料供应到处理室中，从而将其吸附到基底上; 将气态氧化剂供应到处理室中，从而分解由此吸附的Ti源材料，并形成含Ti氧化物膜; 将气态Sr源材料供给到处理室中，从而将其吸附到含Ti氧化物膜上; 并将气态氧化剂供给到处理室中，从而分解由此吸附的Sr源材料，并形成含Sr的氧化物膜。

63. 发明申请

US20070134919A1 FILM FORMING METHOD AND APPARATUS 失效
标题翻译：电影制作方法和装置
公开(公告)号：US20070134919A1
公开(公告)日：2007-06-14
申请号：US11608504
申请日：2006-12-08
申请人： Isao Gunji , Yumiko Kawano
发明人： Isao Gunji , Yumiko Kawano
IPC分类号： H01L21/44
CPC分类号： H01L21/28562 , C23C16/16 , C23C16/18 , C23C16/34 , C23C16/452 , C23C16/45534 , C23C16/45548 , C23C16/45557 , C23C16/46
摘要： A film forming method, for depositing a thin film on a surface of a substrate mounted on a mounting table disposed in a vacuum processing chamber, includes an adsorption process for adsorbing a film forming material on the substrate by introducing a source gas into the processing chamber; and a reaction process for carrying out a film forming reaction, after the adsorption process, by introducing an energy transfer gas into the processing chamber and supplying thermal energy to the film forming material adsorbed on the substrate. By repeating the above process, the thin film is formed on the substrate in a layer-by-layer manner.
摘要翻译：一种薄膜形成方法，用于在安装在设置在真空处理室中的安装台上的基板的表面上沉积薄膜，包括通过将源气体引入处理室中而将成膜材料吸附在基板上的吸附工艺 ; 以及在吸附过程之后，通过将能量转移气体引入处理室并向吸附在基板上的成膜材料提供热能的反应方法进行成膜反应。通过重复上述处理，薄膜以层叠的方式形成在基板上。

64. 发明授权

US5637534A Method of manufacturing semiconductor device having multilevel interconnection structure 失效
标题翻译：制造具有多层互连结构的半导体器件的方法
公开(公告)号：US5637534A
公开(公告)日：1997-06-10
申请号：US172717
申请日：1993-12-27
申请人： Nobuyuki Takeyasu , Hiroshi Yamamoto , Yumiko Kawano , Eiichi Kondoh , Tomoharu Katagiri , Tomohiro Ohta
发明人： Nobuyuki Takeyasu , Hiroshi Yamamoto , Yumiko Kawano , Eiichi Kondoh , Tomoharu Katagiri , Tomohiro Ohta
IPC分类号： H01L21/768 , H01L23/522 , H01L23/532 , H01L21/44
CPC分类号： H01L23/53223 , H01L21/76802 , H01L21/76879 , H01L23/5226 , H01L2924/0002
摘要： A semiconductor device has a multilayered structure that includes an insulating interlayer formed on a lower wiring layer, a semiconductor substrate, and a via hole. The semiconductor device is manufactured by a method that includes plasma etching at least one surface of the insulating interlayer the in an atmosphere having as a major component either a carbonless, chlorine-based gas or a carbonless, chlorine-based gas and an inactive gas in order to remove contaminates that would otherwise promote reactivity with aluminum CVD on the surface of the insulating interlayer.
摘要翻译：半导体器件具有多层结构，其包括形成在下布线层，半导体衬底和通孔上的绝缘中间层。半导体器件通过以下方法制造：包括在作为主要成分的无碳，氯系气体或无碳，氯系气体和惰性气体的气氛中等离子体蚀刻绝缘夹层的至少一个表面以去除否则将促进绝缘中间层表面上的铝CVD的反应性的污染物。

65. 发明授权

US08372688B2 Method for forming Ge-Sb-Te film and storage medium 有权
标题翻译： Ge-Sb-Te薄膜和储存介质的形成方法
公开(公告)号：US08372688B2
公开(公告)日：2013-02-12
申请号：US13376749
申请日：2010-06-02
申请人： Yumiko Kawano , Susumu Arima
发明人： Yumiko Kawano , Susumu Arima
IPC分类号： H01L21/06
CPC分类号： H01L45/06 , C23C16/02 , C23C16/305 , C23C16/4405 , H01L45/144 , H01L45/1616
摘要： A film-forming method includes a preprocessing step (step 1) wherein the inside of a processing chamber is exposed to a gas containing Cl and/or F in a state having no substrate in the processing chamber, and a step (step 2) wherein a substrate is loaded into the processing chamber after the step 1. Then, in a step 3, a gaseous Ge raw material, a gaseous Sb raw material, and a gaseous Te raw material are introduced into the processing chamber having the substrate loaded therein, and a Ge—Sb—Te film formed of Ge2Sb2Te5 is formed on the substrate by CVD.
摘要翻译：成膜方法包括在处理室内没有基板的状态下将处理室的内部暴露于含有Cl和/或F的气体的预处理步骤（步骤1）和步骤（步骤2），其中在步骤1之后将基板装载到处理室中。然后，在步骤3中，将气态Ge原料，气态Sb原料和气态Te原料引入到其中装载有基板的处理室中，并且通过CVD在基板上形成由Ge 2 Sb 2 Te 5形成的Ge-Sb-Te膜。

66. 发明申请

US20120108005A1 METHOD FOR FORMING Ge-Sb-Te FILM AND STORAGE MEDIUM 有权
标题翻译：形成Ge-Sb-Te薄膜和储存介质的方法
公开(公告)号：US20120108005A1
公开(公告)日：2012-05-03
申请号：US13376749
申请日：2010-06-02
申请人： Yumiko Kawano , Susumu Arima
发明人： Yumiko Kawano , Susumu Arima
IPC分类号： H01L21/06 , C23C16/52
CPC分类号： H01L45/06 , C23C16/02 , C23C16/305 , C23C16/4405 , H01L45/144 , H01L45/1616
摘要： A film-forming method includes a preprocessing step (step 1) wherein the inside of a processing chamber is exposed to a gas containing Cl and/or F in a state having no substrate in the processing chamber, and a step (step 2) wherein a substrate is loaded into the processing chamber after the step 1. Then, in a step 3, a gaseous Ge raw material, a gaseous Sb raw material, and a gaseous Te raw material are introduced into the processing chamber having the substrate loaded therein, and a Ge—Sb—Te film formed of Ge2Sb2Te5 is formed on the substrate by CVD.
摘要翻译：成膜方法包括在处理室内没有基板的状态下将处理室的内部暴露于含有Cl和/或F的气体的预处理步骤（步骤1）和步骤（步骤2），其中在步骤1之后将基板装载到处理室中。然后，在步骤3中，将气态Ge原料，气态Sb原料和气态Te原料引入到其中装载有基板的处理室中，并且通过CVD在基板上形成由Ge 2 Sb 2 Te 5形成的Ge-Sb-Te膜。

67. 发明授权

US07582544B2 ALD film forming method 失效
标题翻译： ALD成膜方法
公开(公告)号：US07582544B2
公开(公告)日：2009-09-01
申请号：US11608504
申请日：2006-12-08
申请人： Isao Gunji , Yumiko Kawano
发明人： Isao Gunji , Yumiko Kawano
IPC分类号： H01L21/36
CPC分类号： H01L21/28562 , C23C16/16 , C23C16/18 , C23C16/34 , C23C16/452 , C23C16/45534 , C23C16/45548 , C23C16/45557 , C23C16/46
摘要： A film forming method, for depositing a thin film on a surface of a substrate mounted on a mounting table disposed in a vacuum processing chamber, includes an adsorption process for adsorbing a film forming material on the substrate by introducing a source gas into the processing chamber; and a reaction process for carrying out a film forming reaction, after the adsorption process, by introducing an energy transfer gas into the processing chamber and supplying thermal energy to the film forming material adsorbed on the substrate. By repeating the above process, the thin film is formed on the substrate in a layer-by-layer manner.
摘要翻译：一种薄膜形成方法，用于在安装在设置在真空处理室中的安装台上的基板的表面上沉积薄膜，包括通过将源气体引入处理室中而将成膜材料吸附在基板上的吸附工艺 ; 以及在吸附过程之后，通过将能量转移气体引入处理室并向吸附在基板上的成膜材料提供热能的反应方法进行成膜反应。通过重复上述处理，薄膜以层叠的方式形成在基板上。

68. 发明授权

US6045862A CVD film forming method in which a film formation preventing gas is supplied in a direction from a rear surface of an object to be processed 失效
标题翻译：其中成膜防止气体沿着从被处理物体的后表面的方向供应的CVD膜形成方法
公开(公告)号：US6045862A
公开(公告)日：2000-04-04
申请号：US112452
申请日：1998-07-09
申请人： Masami Mizukami , Takashi Mochizuki , Yumiko Kawano
发明人： Masami Mizukami , Takashi Mochizuki , Yumiko Kawano
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , H01L21/205 , H01L21/285 , H01L21/31 , C23C16/04
CPC分类号： C23C16/45521 , C23C16/455 , C23C16/4585
摘要： A CVD film forming apparatus includes a susceptor, provided in a process chamber, having a surface of an area smaller than that of a wafer. A process gas is supplied to a top surface of the wafer mounted on the susceptor, thereby forming a CVD film on the top surface. A film formation preventing gas is supplied in a direction from the rear surface of the wafer toward a peripheral edge thereof at a flow rate which prevents the process gas from flowing to the rear surface of the wafer.
摘要翻译： CVD膜形成装置包括设置在处理室中的基座，其表面的面积小于晶片的表面。将工艺气体供给到安装在基座上的晶片的顶面，从而在上表面形成CVD膜。从晶片的后表面朝向其周边的方向以防止处理气体流向晶片背面的流量供给成膜防止气体。

69. 发明授权

US6001736A Method of manufacturing semiconductor device and an apparatus for manufacturing the same 失效
标题翻译：半导体装置的制造方法及其制造装置
公开(公告)号：US6001736A
公开(公告)日：1999-12-14
申请号：US610341
申请日：1996-03-04
申请人： Eiichi Kondo , Nobuyuki Takeyasu , Tomohiro Ohta , Yumiko Kawano , Takeshi Kaizuka , Shinpei Jinnouchi
发明人： Eiichi Kondo , Nobuyuki Takeyasu , Tomohiro Ohta , Yumiko Kawano , Takeshi Kaizuka , Shinpei Jinnouchi
IPC分类号： H01L21/306 , H01L21/768 , H01L21/441
CPC分类号： H01L21/02068 , H01L21/76843 , H01L21/76862 , H01L21/76865 , H01L21/76877
摘要： An insulating layer is provided on a semiconductor substrate, a contact hole is formed in the insulating layer, and an underlying metal film is provided on a whole surface of the substrate including inner walls of the contact hole. A surface condition of the underlying metal film is adjusted by a hydrogen plasma treatment. By the hydrogen plasma treatment, a surface of the underlying metal film is hydrogenated and is sputter-etched, so that a disordered film and contaminants adsorbed on the surface of the underlying metal film are removed. Next, aluminum is deposited on the underlying metal film by a chemical vapor deposition process using an organic aluminum compound such as DMAH. The contact hole can be effectively filled with aluminum.
摘要翻译：绝缘层设置在半导体衬底上，在绝缘层中形成接触孔，并且在包括接触孔的内壁的衬底的整个表面上设置下面的金属膜。通过氢等离子体处理来调整底层金属膜的表面状态。通过氢等离子体处理，下面的金属膜的表面被氢化并进行溅射蚀刻，从而去除吸附在下面的金属膜的表面上的无序的膜和污染物。接下来，通过使用有机铝化合物如DMAH的化学气相沉积工艺将铝沉积在下面的金属膜上。接触孔可以有效地填充铝。

70. 发明授权

US5627102A Method for making metal interconnection with chlorine plasma etch 失效
标题翻译：用氯等离子体蚀刻制造金属互连的方法
公开(公告)号：US5627102A
公开(公告)日：1997-05-06
申请号：US569319
申请日：1995-12-08
申请人： Hiroshi Shinriki , Takeshi Kaizuka , Nobuyuki Takeyasu , Tomohiro Ohta , Eiichi Kondoh , Hiroshi Yamamoto , Tomoharu Katagiri , Tadashi Nakano , Yumiko Kawano
发明人： Hiroshi Shinriki , Takeshi Kaizuka , Nobuyuki Takeyasu , Tomohiro Ohta , Eiichi Kondoh , Hiroshi Yamamoto , Tomoharu Katagiri , Tadashi Nakano , Yumiko Kawano
IPC分类号： H01L21/285 , H01L21/3213 , H01L21/768 , H01L21/28
CPC分类号： H01L21/76838 , H01L21/28556 , H01L21/32136 , H01L21/76843 , H01L21/76856 , H01L21/76865 , H01L21/76877 , H01L23/53223 , H01L2924/0002
摘要： A metal interconnection is prepared by forming an underlying metal film of high melting point metal such as Ti and/or high melting point metal compound such as TiN layers above a semiconductor substrate, plasma etching the surface of the underlying metal film in a gas atmosphere containing chloride, and forming an interconnecting metal film such as Al, Cu, Au and Ag on the underlying metal film. Alternatively, a metal interconnection is prepared by forming an insulating film above a semiconductor substrate, forming connection holes in the insulating film, forming an underlying metal film such as TiN on the insulating film and the bottom and side wall of the connection holes by a CVD process under controlled conditions, and forming an interconnecting metal film such as Al on the underlying metal film. The TiN film has (111) preferential orientation and the aluminum film has (111) preferential orientation, smooth surface and effective coverage. The thus fabricated metal interconnection has improved reliability including electromigration immunity when used in semiconductor devices and finding advantageous use in miniaturized semiconductor devices.
摘要翻译：通过在半导体衬底之上形成诸如Ti和/或高熔点金属化合物如TiN层的高熔点金属的下面的金属膜，在等离子体中蚀刻下面的金属膜的表面，在含有并在下面的金属膜上形成诸如Al，Cu，Au和Ag的互连金属膜。或者，通过在半导体衬底上形成绝缘膜，在绝缘膜上形成连接孔，通过CVD在绝缘膜上形成TiN等下面的金属膜，形成连接孔的底壁和侧壁，形成金属互连在控制条件下进行处理，并在底层金属膜上形成互连金属膜如Al。 TiN膜具有（111）优先取向，铝膜具有（111）优先取向，表面光滑，有效覆盖。如此制造的金属互连具有改进的可靠性，包括当用于半导体器件中的电迁移抗扰性并且在小型化的半导体器件中发现有利的用途。

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