专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

61. 发明专利

JPS61253867A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS61253867A
公开(公告)日：1986-11-11
申请号：JP9550685
申请日：1985-05-07
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： TAKEDA EIJI , KUME HITOSHI , SHIMIZU AKIHIRO
IPC分类号： H01L29/78 , H01L21/265
摘要： PURPOSE:To prevent transfer characteristics from deteriorating and to improve reliability of an LDD transistor, by burying in a substrate the peak concentration section of at least one of low concentration impurity layers of the source and drain. CONSTITUTION:On a P-type Si substrate, a gate oxide film 4 is grown on which conductor 6 is deposited. A photosensitive resin film is adhered thereon, under lying films 4, 6 are etched to form a gate section, the photosensitive resin film is removed, and the entire of the wafer is then oxidized. Next, P ions are implanted therein, the entire of the wafer is coated with CVD-SiO2 11 or PSG which is then isotropically-etched so that SiO2 is left only on the gate side wall and then the entire of the wafer is again oxidized to form an oxide film. As ions are implanted, phosphorus silicate glass 5 is deposited on the entire wafer as a protective film, a contact hole is opened for contacting the source and drain, and wiring aluminum is deposited to form a wiring. In this way, charges to be trapped in the gate side wall insulating film 11 can be reduced and deterioration of the transfer conductance can be reduced remarkably.

62. 发明专利

DE69413493T2 未知
公开(公告)号：DE69413493T2
公开(公告)日：1999-06-02
申请号：DE69413493
申请日：1994-10-27
申请人： HITACHI LTD
发明人： SHIMIZU AKIHIRO , UTAMURA MOTOAKI , HOIZUMI SHINICHI , KOMATSU HIDEAKI
IPC分类号： F02C3/22 , F02C7/143 , F02C7/16 , F02C7/224 , F28D15/00
摘要： System for cooling gas turbine inlet air using turbine combustion fuel (e.g. liquid natural gas) comprising a heat exchanger (4) for exchanging heat between the relatively cold fuel (2) and a first heat exchange medium (7), such as brine, via an intermediate heat exchange medium (5,6) such as propane. The system also contains a heat accumulator (8) for heat exchange between the relatively cold first heat exchange medium (7) and a second heat exchange medium (9) such as water in order that said second heat exchange medium (9) can accumulate chilling properties and, upon demand, transfer these properties to a turbine inlet air cooler (10), thus cooling said inlet air (13) by heat exchange with said second heat exchange medium (9).

63. 发明专利

DE3484955D1 未知
公开(公告)号：DE3484955D1
公开(公告)日：1991-09-26
申请号：DE3484955
申请日：1984-12-17
申请人： HITACHI LTD , HITACHI MICROCUMPUTER ENG
发明人： KUME HITOSHI , HAGIWARA TAKAAKI , HORIUCHI MASATADA , KAGA TORU , IGURA YASUO , SHIMIZU AKIHIRO
IPC分类号： G11C11/405 , H01L21/822 , H01L21/8234 , H01L27/00 , H01L27/04 , H01L27/06 , H01L27/088 , H01L27/10 , H01L27/108 , H01L27/12 , H01L21/82
摘要： A three-transistor random access memory cell has two transistors (T2, T3) formed in a semiconductor substrate (1), with the source or drain (3) of one transistor being connected to the source or drain of the other transistor. Another transistor (T1) of the cell is stacked on one of the transistors (T3) in the substrate (1) with its source or drain (12) connected to the gate of the other transistor (T2) in the substrate. The stacking of one transistor (T1) on another (T3) reduces the area occupied by the device and so permits extremely large scale integration.

64. 发明专利

MY135557A A SEMICONDUCTOR DEVICE INCLUDING STRESS INDUCING FILMS FORMED OVER N-CHANNEL AND P-CHANNEL FIELD EFFECT TRANSISTORS AND A METHOD OF MANUFACTURING THE SAME 未知
公开(公告)号：MY135557A
公开(公告)日：2008-05-30
申请号：MYPI20014802
申请日：2001-10-16
申请人： HITACHI LTD , HITACHI ULSI SYS CO LTD
发明人： SHIMIZU AKIHIRO , OOKI NAGATOSHI , NONAKA YUSUKE , ICHINOSE KATSUHIKO
IPC分类号： H01L21/265 , H01L21/318 , H01L21/336 , H01L21/768 , H01L21/8238 , H01L23/532 , H01L27/092 , H01L29/423 , H01L29/49 , H01L29/78 , H01L29/786
摘要： DESCRIBED IS A SEMICONDUCTOR DEVICE HAVING AN N CHANNEL CONDUCTIVITY TYPE FIELD EFFECT TRANSISTOR HAVING A CHANNEL FORMATION REGION FORMED IN A FIRST REGION ON ONE MAIN SURFACE OF A SEMICONDUCTOR SUBSTRATE (1) AND A P CHANNEL CONDUCTIVITY TYPE FIELD EFFECT TRANSISTOR HAVING A CHANNEL FORMATION REGION FORMED IN A SECOND REGION ON THE MAIN SURFACE OF THE SEMICONDUCTOR SUBSTRATE (1) WHICH REGION IS DIFFERENT FROM THE FIRST REGION, WHEREIN AN INTERNAL STRESS GENERATED IN THE CHANNEL FORMATION REGION OF THE N CHANNEL CONDUCTIVITY TYPE FIELD EFFECT TRANSISTOR IS DIFFERENT FROM AN INTERNAL STRESS GENERATED IN THE CHANNEL FORMATION REGION OF THE P CHANNEL CONDUCTIVITY TYPE FIELD EFFECT TRANSISTOR.THE INTERNAL STRESS GENERATED IN THE CHANNEL FORMATION REGION OF THE N CHANNEL CONDUCTIVITY TYPE FIELD EFFECT TRANSISTOR IS A TENSILE STRESS, WHILE THE INTERNAL STRESS GENERATED IN THE CHANNEL FORMATION REGION OF THE P CHANNEL CONDUCTIVITY TYPE FIELD EFFECT TRANSISTOR IS A COMPRESSIVE STRESS.(FIG 1)

65. 发明专利

DE69413493D1 未知
公开(公告)号：DE69413493D1
公开(公告)日：1998-10-29
申请号：DE69413493
申请日：1994-10-27
申请人： HITACHI LTD
发明人： SHIMIZU AKIHIRO , UTAMURA MOTOAKI , HOIZUMI SHINICHI , KOMATSU HIDEAKI
IPC分类号： F02C3/22 , F02C7/143 , F02C7/16 , F02C7/224 , F28D15/00
摘要： System for cooling gas turbine inlet air using turbine combustion fuel (e.g. liquid natural gas) comprising a heat exchanger (4) for exchanging heat between the relatively cold fuel (2) and a first heat exchange medium (7), such as brine, via an intermediate heat exchange medium (5,6) such as propane. The system also contains a heat accumulator (8) for heat exchange between the relatively cold first heat exchange medium (7) and a second heat exchange medium (9) such as water in order that said second heat exchange medium (9) can accumulate chilling properties and, upon demand, transfer these properties to a turbine inlet air cooler (10), thus cooling said inlet air (13) by heat exchange with said second heat exchange medium (9).

66. 发明专利

AU6788001A Semiconductor device and method for fabricating the same 未知
公开(公告)号：AU6788001A
公开(公告)日：2002-06-03
申请号：AU6788001
申请日：2001-06-29
申请人： HITACHI LTD , HITACHI ULSI SYS CO LTD
发明人： SHIMIZU AKIHIRO , OOKI NAGATOSHI , NONAKA YUSUKE , ICHINOSE KATSUHIKO
IPC分类号： H01L21/265 , H01L21/318 , H01L21/336 , H01L21/768 , H01L21/8238 , H01L23/532 , H01L27/092 , H01L29/423 , H01L29/49 , H01L29/78 , H01L29/786

67. 发明专利

DE4025421A1 Continuous heat recovery from engine exhaust gases - involves sequence of two chemically-based heat storage units 未知
公开(公告)号：DE4025421A1
公开(公告)日：1991-02-28
申请号：DE4025421
申请日：1990-08-10
申请人： HITACHI LTD , HITACHI ENG CO LTD
发明人： INABA YOSHIAKI , TOKUNAGA KENJI , SHIMIZU AKIHIRO , KURIBAYASHI TETSUZO
IPC分类号： F02C6/18 , F01K3/00 , F01K23/10 , F02G5/02 , F24V30/00 , F28D20/00
摘要： The system is used for the recovery of waste heat from the exhaust gas of an IC engine. It incorporates two chemically based heat storage units (2, 2`). - High temp. gases are led from the engine (1) to the first container of the first unit, which holds a reactant, and then to a second container holding a reaction-favouring medium, the resulting lower temp. gases are then led to the containers in the second unit, where further reactions take place.

68. 发明专利

CA1222821A STACKED SEMICONDUCTOR MEMORY 未知
公开(公告)号：CA1222821A
公开(公告)日：1987-06-09
申请号：CA470021
申请日：1984-12-13
申请人： HITACHI LTD , HITACHI MICROCUMPUTER ENG
发明人： KUME HITOSHI , HAGIWARA TAKAAKI , HORIUCHI MASATADA , KAGA TORU , IGURA YASUO , SHIMIZU AKIHIRO
IPC分类号： G11C11/405 , H01L21/822 , H01L21/8234 , H01L27/00 , H01L27/04 , H01L27/06 , H01L27/088 , H01L27/10 , H01L27/108 , G11C11/40
摘要： : In a 3-transistor random access memory for dynamic operation, one of the transistors is stacked on the other transistor. A transistor for writing is disposed on a transistor for reading, and one of its terminals is used in common with the gate electrode of a transistor for judging data. The other terminal is connected to one of the terminals of the transistor for reading. The result is a memory cell capable of extremely large scale integration.

69. 发明专利

JP2010238048A Electrical path installation work design method, program, and electrical path installation work design apparatus 有权
标题翻译：电气路径安装工作设计方法，程序和电气路径安装工作设计设备
公开(公告)号：JP2010238048A
公开(公告)日：2010-10-21
申请号：JP2009086464
申请日：2009-03-31
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： HIRATA TAKAHIRO , TSUBOTA SHINICHI , SHIMIZU AKIHIRO
IPC分类号： G06F17/50
摘要： PROBLEM TO BE SOLVED: To automatically select an optimum electrical path to be installed in a plant or a route thereof, assemble the electrical paths into a block, while ensuring the safety of a worker to streamline electrical path installation work. SOLUTION: An automatic optimum electrical path design selecting unit 121 of an electrical path installation work design apparatus 1 extracts, when a device model configuring a plant is arranged by using a three-dimensional CAD, cable model data 112 and electrical path model data 116 corresponding to the device model from a material model database 102, and selects an optimum electrical path route, taking into consideration the space factor in design data 120. An optimum electrical path blocking design unit 122 automatically assembles the electrical paths into a block, on the basis of heavy-machine model data 118 of a heavy machine to be used for installation of the electrical paths and an installation space in the design data 120; shows an assembled electrical path installation work on a three-dimensional image 140, and calculates a work schedule, the number of workers and days to be required for the electrical path installation which is to be output as output data 130. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了自动选择要安装在工厂或其路线中的最佳电路，将电路组装成块，同时确保工人的安全性以简化电路安装工作。电路安装工作设计装置1的自动最佳电路设计选择单元121当通过使用三维CAD来布置配置工厂的设备模型时，提取电缆模型数据112和电路径模型数据116对应于来自材料模型数据库102的设备模型，并且考虑到设计数据120中的空间因素，选择最佳电路径路径。最佳电路阻挡设计单元122自动将电路组装成块，基于用于安装电气路径的重型机器的重型机器型号数据118和设计数据120中的安装空间; 示出了三维图像140上的组装电路安装工作，并且计算作为输出数据130输出的电气路径安装所需的工作时间表，工作人员数和工作日数。版权所有：（C）2011，JPO＆INPIT

70. 发明专利

JP2003258257A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND ITS MANUFACTURING METHOD 审中-公开
公开(公告)号：JP2003258257A
公开(公告)日：2003-09-12
申请号：JP2002051581
申请日：2002-02-27
申请人： HITACHI LTD , HITACHI ULSI SYS CO LTD
发明人： HIYOUMA MASAHIRO , SHIMIZU AKIHIRO
IPC分类号： H01L21/762 , H01L21/02 , H01L21/336 , H01L21/8238 , H01L27/08 , H01L27/092 , H01L27/12 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To improve the hot carrier resistance of an MISFET formed on an SOI substrate as well as the breakdown strength between a source and a drain. SOLUTION: The SOI substrate provided with a semiconductor layer 1a, an insulation layer 1b thereon, and a semiconductor layer 1c thereon is processed by a high-temperature RTN (Rapid Thermal Nitrization) treatment using an N 2 O (dinitrogen monoxide) gas atmosphere at 1100 to 1200°C, thereby the forming an axynitride (100 or the like) in a boundary between the semiconductor layer 1c and insulation layer 1b and on the surface of the semiconductor layer 1c, and then the oxynitiride on the surface of the semiconductor layer 1c is removed, and an gate oxide film (gate insulation film) 8 is formed on the semiconductor layer 1c and its surface is nitrified. Furthermore, a gate electrode G, and a source and a drain (n-type semiconductor area 14 and p-type semiconductor area 15) is formed to make MISFETs Qn and Qp. COPYRIGHT: (C)2003,JPO

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式