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61. 发明专利

JPH06163619A SEMICONDUCTOR DEVICE AND TRANFER MOLD DIE USED FOR ITS MANUFACTURE 失效
公开(公告)号：JPH06163619A
公开(公告)日：1994-06-10
申请号：JP31864992
申请日：1992-11-27
申请人： HITACHI LTD , HITACHI MICOM SYST KK , HITACHI VLSI ENG
发明人： NISHIDA TAKAFUMI , ICHIHARA SEIICHI , ITO FUJIO , NISHI KUNIHIKO , SHIMOISHI TOMOAKI , YAMADA MASARU
IPC分类号： B29C45/02 , B29C45/26 , B29L31/34 , H01L21/56 , H01L23/50
摘要： PURPOSE:To prevent lead bent of a mold TCP and to eliminate formation of void of a package. CONSTITUTION:The tip of outer lead 9 is fixed by a guard ring 13 for protection, so lead bent is hard to take place. The guard ring is formed at the same time when a package is formed at transfer molding. The tip part of the flaw of a resin 37, having flown into the package cavity for forming the package, flows into, through a connection cavity, a flow cavity that forms the guard ring. In addition, the resin gradually flows into the flaw cavity also from a gate. The void generated by air entangled in the tip part of the resin flow comes out of the package cavity and comes into the flaw cavity. So, the void does not remain in a package 12.

62. 发明专利

JPH04275443A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPH04275443A
公开(公告)日：1992-10-01
申请号：JP3737091
申请日：1991-03-04
申请人： HITACHI LTD , HITACHI MICOM SYST KK
发明人： YAMADA MUNEHIRO , NISHI KUNIHIKO , ICHIHARA SEIICHI
IPC分类号： H01L21/60
摘要： PURPOSE:To prevent disconnection during a temperature cycling test by increasing the strength of a TAB inner lead. CONSTITUTION:A TAB 1 of this invention is of a structure that a corner of a semiconductor chip 5 is laid out with a wide-width inner lead 3a extending in two directions which is connected to a bump 6 provide in a chip corner.

63. 发明专利

JPS6379348A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS6379348A
公开(公告)日：1988-04-09
申请号：JP22359986
申请日：1986-09-24
申请人： HITACHI LTD , HITACHI MICROCUMPUTER ENG
发明人： MIYAMOTO KEIJI , ICHIHARA SEIICHI , MATSUKAWA KEIZO
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/60
摘要： PURPOSE:To alleviate stress, which is applied to an external electrode at the time of bonding by an organic film and to enhance reliability, by providing the organic film between the peripheral part of the external electrode and an insulating film comprising an inorganic film in a ring shape. CONSTITUTION:An organic film 10 is formed in a ring shaped pattern so that the central part of an aluminum layer 9, which is a part of a bump electrode 2, is exposed. The organic film 10 is provided only at the periphery of the bump electrode 2 on a semiconductor chip 1. The film is not provided at a part other than said periphery. Therefore, an insulating film 8, which is an inorganic film, is exposed at the part other than the periphery of the bump electrode 2. Since the organic film 10 is provided only at the peripheral part of the bump electrode 2, stress due to thermal expansion with respect to a packaging material 15 is less and the film 10 is hard to be separated. Since depositing property between the packaging material and the insulating film 8 is excellent, the insulating film 8 is not separated due to the difference in thermal expansions with respect to the packaging material 15.

64. 发明专利

JPS62116800A Plating device 失效
标题翻译：电镀设备
公开(公告)号：JPS62116800A
公开(公告)日：1987-05-28
申请号：JP25479985
申请日：1985-11-15
申请人： Hitachi Ltd , Hitachi Micro Comput Eng Ltd
发明人： ICHIHARA SEIICHI , MIYAMOTO KEIJI , OKUDAIRA HIROAKI
IPC分类号： H01L21/60 , C25D17/00 , C25D17/10 , C25D21/10 , H05K3/18 , H05K3/24
CPC分类号： H05K3/241
摘要： PURPOSE:To form a plating layer having high quality and uniform thickness over the entire region of a material to be treated by providing a liquid flow forming means for a plating liquid from the material to be treated as a cathode toward anode plates disposed to face the same in an electrolytic cell. CONSTITUTION:Wafers 4a, 4b which are the material to be treated as the cathode are mounted on a jig plate 5 and anode plates 7a, 7b having meshed anode parts 8a, 8b of approximately the same shape as the shape of the wafers 4a, 4 are disposed to face the wafers in the electrolytic cell 3. Shielding cylinders 10a, 10b having the inside diameter of approximately the same shape as the shape of the wafers 4a, 4b are disposed apart at a slight space from the wafers 4a, 4b in the wafer 4a, 4b direction from the above-mentioned anode parts 8a, 8b in such electrolytic cell. Inflow ports 11a, 11b provided between the anode plates 7a, 7b and the plate 5 and outflow parts 13a, 13b provided between the anode plates 7a, 7b and cell walls 12a, 12b are connected by connecting pipes 14a, 14b interposed with a pump 15 to form the flow of the plating liquid 2 in the arrow direction.
摘要翻译：目的：通过将待处理材料作为阴极的电镀液体的液体流动形成装置设置成面向所述待处理材料的阳极板，以形成在待处理材料的整个区域上具有高质量和均匀厚度的镀层。在电解池中相同。构成：将作为阴极处理的材料的晶片4a，4b安装在夹具板5上，并且具有与晶片4a，4的形状大致相同形状的网状阳极部分8a，8b的阳极板7a，7b 被设置为面对电解池3中的晶片。具有与晶片4a，4b的形状大致相同形状的内径的屏蔽气缸10a，10b在与晶片4a，4b的晶片4a，4b的微小空间中分离晶片4a，4b的方向从上述阳极部分8a，8b放出。设置在阳极板7a，7b和板5之间的流入口11a，11b和设置在阳极板7a，7b和单元壁12a，12b之间的流出部分13a，13b通过插入泵15的连接管14a，14b连接以形成电镀液2沿箭头方向的流动。

65. 发明专利

JPS61217298A INTEGRATED CIRCUIT CARD 失效
公开(公告)号：JPS61217298A
公开(公告)日：1986-09-26
申请号：JP5841385
申请日：1985-03-25
申请人： HITACHI MICROCUMPUTER ENG , HITACHI LTD
发明人： ICHIHARA SEIICHI , KAWANOBE TORU , OTSUKA KENICHI , MIYAMOTO KEIJI
IPC分类号： H01L23/28 , B42D15/02 , B42D15/10

66. 发明专利

JPS6132530A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：JPS6132530A
公开(公告)日：1986-02-15
申请号：JP15299584
申请日：1984-07-25
申请人： Hitachi Ltd , Hitachi Micro Comput Eng Ltd
发明人： KAWANOBE TORU , MIYAMOTO KEIJI , ICHIHARA SEIICHI
IPC分类号： H01L21/60
CPC分类号： H01L21/76897 , H01L2224/50
摘要： PURPOSE:To omit both inner lead bonding and outer lead cutting processes by a method wherein leads arranged together with wirings on a substrate are overhung above a semiconductor element containing hole to bond the edges thereof on a chip by means of solder reflowing process. CONSTITUTION:The edges 5 of conductor leads 4 arranged on a substrate 1 are overhung as cantilevers above a containing hole 3 of a chip 2 concavely provided in almost central part of a semiconductor mounting substrate 1. Besides, the conductor leads 4 formed of thin layers including the lead edges 5 thereof are covered with insulating layers 7 for the sake of reinforcement. Finally the chip 2 formed of solder bumps 6 may be brought into contact with the edges 5 of conductor leads 4 to be bonded with one another by means of solder reflowing process.
摘要翻译：目的：通过一种方法省略内部引线接合和外部引线切割工艺，其中将引线与衬底上的布线一起布置在半导体元件容纳孔上方，通过焊料回流工艺将其边缘结合在芯片上。构成：布置在基板1上的导体引线4的边缘5作为悬臂悬挂在半导体安装基板1的大致中心部分中的芯片2的容纳孔3的上方。此外，导体引线4由薄层为了加强，包括其引线边缘5被绝缘层7覆盖。最后，由焊料凸块6形成的芯片2可以与导体引线4的边缘5接触，以通过焊料回流工艺彼此接合。

67. 发明专利

JPS60195961A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：JPS60195961A
公开(公告)日：1985-10-04
申请号：JP5099984
申请日：1984-03-19
申请人： Hitachi Ltd , Hitachi Micro Comput Eng Ltd
发明人： KAWANOBE TOORU , MIYAMOTO KEIJI , ICHIHARA SEIICHI
IPC分类号： H01L21/60 , H01L23/532
CPC分类号： H01L24/05 , H01L23/532 , H01L24/03 , H01L24/73 , H01L2224/04042 , H01L2224/05073 , H01L2224/05157 , H01L2224/05558 , H01L2224/32245 , H01L2224/48 , H01L2224/48091 , H01L2224/48247 , H01L2224/48453 , H01L2224/48465 , H01L2224/73265 , H01L2924/01013 , H01L2924/01014 , H01L2924/01027 , H01L2924/01078 , H01L2924/01079 , H01L2924/05042 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PURPOSE:To improve the reliability by coating cobalt or an alloy which mainly contains a cobalt as the first layer and a noble metal as the second layer on a bonding pad forming portion, thereby preventing the inner aluminum wirings from corroding. CONSTITUTION:An insulating layer 11 of a phosphosilicate glass, aluminum, wirings 12 and final passivation film 10 of silicon nitride are formed on a silicon substrate for forming an element, the wirings 12 are exposed by etching, and a bonding pad forming portion is formed. The cobalt is deposited, etched to form the first layer 8 of the shape extended on the film 10 at the periphery, gold is coated by electroless plating method or sputtering to form the second layer 9. The interior of the pad can be sealed, and corroding substance can be prevented from entering.
摘要翻译：目的：为了提高可靠性，可以通过在接合焊盘形成部上涂覆钴或以钴为主体的合金和作为第二层的贵金属，从而防止内部铝配线的腐蚀而提高可靠性。构成：在用于形成元件的硅衬底上形成磷硅玻璃，铝，布线12和氮化硅的最终钝化膜10的绝缘层11，通过蚀刻暴露布线12，形成焊盘形成部。钴沉积，蚀刻以形成在周边延伸在膜10上的形状的第一层8，金通过无电镀方法或溅射涂覆以形成第二层9.衬垫的内部可以被密封，并且可以防止腐蚀物质进入。

68. 发明专利

JPS60136339A BUMP ELECTRODE 失效
公开(公告)号：JPS60136339A
公开(公告)日：1985-07-19
申请号：JP24405283
申请日：1983-12-26
申请人： HITACHI LTD , HITACHI MICROCUMPUTER ENG
发明人： KAWANOBE TOORU , MIYAMOTO KEIJI , ICHIHARA SEIICHI
IPC分类号： H01L21/60 , H01L21/92
摘要： PURPOSE:To enable to prevent the corrosion generating on a conductive layer due to infiltration of a corrosive substance which developes into disconnection of wires by a method wherein a base material, having an eave closely contacted to the upper face of the insulating film located on the circumference of the aperture part of a through hole, is provided using a metal having an excellent corrosion-resisting property. CONSTITUTION:A bump electrode 1 is composed of conductive layer 7, consisting of the two layer of a titanium layer 5 and a copper layer 6 formed between an insulating film 2 consisting of polyimide and the final passivation film 4 such as plasma nitride film and the like which is formed in deposition on the upper surface of a pellet 3 consisting of a polyimide insulating film 2, and an almost semispherical solder which is electrically connected through the intermediary of a base metal 8 consisting of nickel. The base metal 8 comes in contact with the copper layer 6 using a through hole 9 formed at a part of the insulating film 2, and said base metal 8 is provided in such a manner that an eave 10, which is closely contacted to the upper surface of the insulating film located on the circumference of the aperture part of the through hole, can be formed.

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