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61. 发明申请

US20100073031A1 NANOTUBE-BASED SWITCHING ELEMENTS WITH MULTIPLE CONTROLS AND LOGIC CIRCUITS HAVING SAID ELEMENTS 有权
标题翻译：具有多个控制和基于元素的逻辑电路的基于纳米管的开关元件
公开(公告)号：US20100073031A1
公开(公告)日：2010-03-25
申请号：US12246013
申请日：2008-10-06
申请人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
发明人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
IPC分类号： H03K19/02 , H03K19/20
CPC分类号： H01L29/0665 , B82Y10/00 , G11C13/025 , G11C23/00 , G11C2213/17 , H01H1/0094 , H01H1/027 , H01L27/28 , H01L29/0673 , H01L29/73 , H01L29/78 , H01L51/0048 , H01L51/0508 , Y10S977/708 , Y10S977/932 , Y10S977/936 , Y10S977/938 , Y10S977/94 , Y10S977/943
摘要： Boolean logic circuits comprising nanotube-based switching elements with multiple controls. The Boolean logic circuits include input and output terminals and a network of nanotube switching elements electrically disposed between said at least one input terminal and said output terminal. Each switching element includes an input node, an output node, and a nanotube channel element having at least one electrically conductive nanotube. A control structure is disposed in relation to the nanotube channel element to controllably form and unform an electrically conductive channel along the nanotube channel element. At least one nanotube switching element non-volatilely retains an informational state and at least one nanotube switching elements volatilely retains an informational state. The network of nanotube switching elements effectuates a Boolean function transformation of Boolean signals on said at least one input terminal. Dual rail cascode logic circuits may also be constructed from the nanotube switching elements.
摘要翻译：包括具有多个控制的基于纳米管的开关元件的布尔逻辑电路。布尔逻辑电路包括输入和输出端子以及电气设置在所述至少一个输入端子和所述输出端子之间的纳米管开关元件网络。每个开关元件包括输入节点，输出节点和具有至少一个导电纳米管的纳米管通道元件。相对于纳米管通道元件设置控制结构，以可控地形成和取消沿着纳米管通道元件的导电通道。至少一个纳米管开关元件不挥发地保持信息状态，并且至少一个纳米管开关元件挥发性地保持信息状态。纳米管切换元件的网络在所述至少一个输入端上实现布尔信号的布尔函数变换。双轨共源共栅逻辑电路也可以由纳米管开关元件构成。

62. 发明授权

US07649769B2 Circuit arrays having cells with combinations of transistors and nanotube switching elements 有权
标题翻译：具有晶体管和纳米管开关元件组合的单元的电路阵列
公开(公告)号：US07649769B2
公开(公告)日：2010-01-19
申请号：US11945710
申请日：2007-11-27
申请人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal , Frank Guo
发明人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal , Frank Guo
IPC分类号： G11C11/50 , G11C11/52
CPC分类号： H01L29/78 , B82Y10/00 , B82Y99/00 , G11C7/065 , G11C13/025 , G11C16/0416 , G11C17/16 , G11C17/165 , G11C23/00 , G11C2213/16 , G11C2213/17 , G11C2213/79 , H01H1/0094 , H01L27/10 , H01L27/1052 , H01L27/112 , H01L27/11206 , H01L27/115 , H01L27/286 , H01L29/0665 , H01L29/0673 , H01L29/42324 , H01L51/0048 , H01L51/0052 , H01L51/0508 , Y10S977/708 , Y10S977/724 , Y10S977/742 , Y10S977/762 , Y10S977/936 , Y10S977/938 , Y10S977/94 , Y10S977/943
摘要： Circuit arrays having cells with combinations of transistors and nanotube switches. Under one embodiment, cells are arranged as pairs with the nanotube switching elements of the pair being cross coupled so that the set electrode of one nanotube switching element is coupled to the release electrode of the other and the release electrode of the one nanotube switching element being coupled to the set electrode of the other. The nanotube articles are coupled to the reference line, and the source of one field effect transistor of a pair is coupled to the set electrode to one of the two nanotube switching elements and the source of the other field effect transistor of the pair is coupled to the release electrode to the one of the two nanotube switching elements.
摘要翻译：具有晶体管和纳米管开关组合的单元的电路阵列。在一个实施例中，单元被布置为成对，其中该对的纳米管开关元件交叉耦合，使得一个纳米管开关元件的设定电极耦合到另一个的释放电极，并且一个纳米管开关元件的释放电极为耦合到另一个的设定电极。纳米管制品耦合到参考线，并且一对场效应晶体管的源极耦合到设置电极到两个纳米管开关元件中的一个，并且该对的另一个场效应晶体管的源耦合到释放电极到两个纳米管开关元件中的一个。

63. 发明授权

US07588960B2 Nanotube device structure and methods of fabrication 有权
标题翻译：纳米管器件结构及其制造方法
公开(公告)号：US07588960B2
公开(公告)日：2009-09-15
申请号：US11449969
申请日：2006-06-09
申请人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
发明人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
IPC分类号： H01L21/4763 , H01L41/00 , H01L51/40
CPC分类号： H01L29/0665 , B82Y10/00 , G11C13/025 , G11C23/00 , H01H1/0094 , H01H1/027 , H01H2001/0005 , H01L27/28 , H01L29/0673 , H01L29/73 , H01L29/78 , H01L51/0048 , H01L51/0508 , Y10S977/725 , Y10S977/733 , Y10S977/755 , Y10S977/938 , Y10T29/49105
摘要： Nanotube device structures and methods of fabrication. A method of making a nanotube switching element includes forming a first structure having at a first output electrode; forming second structure having a second output electrode; forming a conductive article having at least one nanotube, the article having first and second ends; positioning the conductive article between said first and second structures such that the first structure clamps the first and second ends of the article to the second structure, and such that the first and second output electrodes are opposite each other with the article positioned therebetween; providing at least one signal electrode in electrical communication with the conductive article; and providing at least one control electrode in spaced relation to the conductive article such that the control electrode may control the conductive article to form a conductive pathway between the signal electrode and the first output electrode.
摘要翻译：纳米管器件结构和制造方法。制造纳米管开关元件的方法包括：形成具有第一输出电极的第一结构; 形成具有第二输出电极的第二结构; 形成具有至少一个纳米管的导电制品，所述制品具有第一和第二端; 将导电制品定位在所述第一和第二结构之间，使得第一结构将制品的第一和第二端夹持到第二结构，并且使得第一和第二输出电极彼此相对，物品位于它们之间; 提供至少一个与所述导电制品电连通的信号电极; 以及提供与所述导电制品间隔开的至少一个控制电极，使得所述控制电极可以控制所述导电制品以在所述信号电极和所述第一输出电极之间形成导电路径。

64. 发明申请

US20090140213A1 METHOD OF MAKING AN APPLICATOR LIQUID FOR ELECTRONICS FABRICATION PROCESS 有权
标题翻译：制造电子制造工艺的应用液体的方法
公开(公告)号：US20090140213A1
公开(公告)日：2009-06-04
申请号：US10860331
申请日：2004-06-03
申请人： Rahul Sen , Ramesh Sivarajan , Thomas Rueckes , Brent M. Segal
发明人： Rahul Sen , Ramesh Sivarajan , Thomas Rueckes , Brent M. Segal
IPC分类号： H01B1/04
CPC分类号： B82Y40/00 , B82Y10/00 , B82Y30/00 , C01B32/168 , C01B32/17 , C01B2202/02 , H01L51/0007 , H01L51/0048 , Y10S977/845 , Y10S977/847
摘要： Certain spin-coatable liquids and application techniques are described, which can be used to form nanotube films or fabrics of controlled properties. A method of making an applicator liquid containing nanotubes for use in an electronics fabrication process includes characterizing an electronic fabrication process according to fabrication compatible solvents and allowable levels of metallic and particle impurities; providing nanotubes that satisfy the allowable impurities criteria for the electronics fabrication process; providing a solvent that meets the fabrication compatible solvents and allowable impurities criteria for the electronic fabrication process; and dispersing the nanotubes into the solvent at a concentration of at least one milligram of nanotubes per liter solvent to form an applicator liquid.
摘要翻译：描述了一些可旋涂的液体和应用技术，其可以用于形成纳米管膜或受控特性的织物。制造用于电子制造工艺的包含纳米管的涂布器液体的方法包括根据制造相容的溶剂和允许的金属和颗粒杂质水平表征电子制造工艺; 提供满足电子制造工艺允许杂质标准的纳米管; 提供满足电子制造工艺制造相容溶剂和允许杂质标准的溶剂; 并以每升溶剂至少1毫克纳米管的浓度将纳米管分散到溶剂中以形成涂布液。

65. 发明授权

US07419845B2 Methods of making electromechanical three-trace junction devices 有权
标题翻译：制造机电三迹结装置的方法
公开(公告)号：US07419845B2
公开(公告)日：2008-09-02
申请号：US11188678
申请日：2005-07-25
申请人： Thomas Rueckes , Brent M. Segal , Darren K. Brock
发明人： Thomas Rueckes , Brent M. Segal , Darren K. Brock
IPC分类号： H01L21/00
CPC分类号： H01L21/76838 , B81C1/00142 , B81C2201/019 , B82Y10/00 , G11C13/025 , G11C23/00 , G11C2213/16 , G11C2213/81 , H01H1/0094 , Y10S977/734
摘要： Methods of producing an electromechanical circuit element are described. A lower structure having lower support structures and a lower electrically conductive element is provided. A nanotube ribbon (or other electromechanically responsive element) is formed on an upper surface of the lower structure so as to contact the lower support structures. An upper structure is provided over the nanotube ribbon. The upper structure includes upper support structures and an upper electrically conductive element. In some arrangements, the upper and lower electrically conductive elements are in vertical alignment, but in some arrangements they are not.
摘要翻译：描述制造机电电路元件的方法。提供具有较低支撑结构和较低导电元件的下部结构。纳米管带（或其他机电响应元件）形成在下结构的上表面上以便接触下支撑结构。在纳米管带上提供上部结构。上部结构包括上部支撑结构和上部导电元件。在一些布置中，上和下导电元件是垂直对准的，但在某些布置中它们不是。

66. 发明授权

US07280394B2 Field effect devices having a drain controlled via a nanotube switching element 有权
标题翻译：具有通过纳米管开关元件控制的漏极的场效应器件
公开(公告)号：US07280394B2
公开(公告)日：2007-10-09
申请号：US10863972
申请日：2004-06-09
申请人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
发明人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
IPC分类号： G11C11/34 , G11C11/50 , H01L27/20 , H01L29/82
CPC分类号： H01L29/78 , B82Y10/00 , B82Y99/00 , G11C7/065 , G11C13/025 , G11C16/0416 , G11C17/16 , G11C17/165 , G11C23/00 , G11C2213/16 , G11C2213/17 , G11C2213/79 , H01H1/0094 , H01L27/10 , H01L27/1052 , H01L27/112 , H01L27/11206 , H01L27/115 , H01L27/286 , H01L29/0665 , H01L29/0673 , H01L29/42324 , H01L51/0048 , H01L51/0052 , H01L51/0508 , Y10S977/708 , Y10S977/724 , Y10S977/742 , Y10S977/762 , Y10S977/936 , Y10S977/938 , Y10S977/94 , Y10S977/943
摘要： Field effect devices having a drain controlled via a nanotube switching element. Under one embodiment, a field effect device includes a source region and a drain region of a first semiconductor type and a channel region disposed therebetween of a second semiconductor type. The source region is connected to a corresponding terminal. A gate structure is disposed over the channel region and connected to a corresponding terminal. A nanotube switching element is responsive to a first control terminal and a second control terminal and is electrically positioned in series between the drain region and a terminal corresponding to the drain region. The nanotube switching element is electromechanically operable to one of an open and closed state to thereby open or close an electrical communication path between the drain region and its corresponding terminal. When the nanotube switching element is in the closed state, the channel conductivity and operation of the device is responsive to electrical stimulus at the terminals corresponding to the source and drain regions and the gate structure.
摘要翻译：具有通过纳米管开关元件控制的漏极的场效应器件。在一个实施例中，场效应器件包括第一半导体类型的源极区域和漏极区域以及设置在第二半导体类型之间的沟道区域。源区域连接到相应的终端。栅极结构设置在沟道区域上并连接到相应的端子。纳米管开关元件响应于第一控制端子和第二控制端子，并且电连接地定位在漏极区域和对应于漏极区域的端子之间。纳米管开关元件在机电上可操作地处于打开和关闭状态之一，从而打开或关闭漏区和其相应端之间的电连通路径。当纳米管开关元件处于闭合状态时，器件的沟道导电性和操作响应于对应于源极和漏极区域以及栅极结构的端子处的电刺激。

67. 发明授权

US06919592B2 Electromechanical memory array using nanotube ribbons and method for making same 有权
标题翻译：使用纳米管带的机电存储器阵列及其制造方法
公开(公告)号：US06919592B2
公开(公告)日：2005-07-19
申请号：US09915093
申请日：2001-07-25
申请人： Brent M. Segal , Darren K. Brock , Thomas Rueckes
发明人： Brent M. Segal , Darren K. Brock , Thomas Rueckes
IPC分类号： B82B1/00 , B81B3/00 , B82B3/00 , G11C13/02 , G11C23/00 , H01H59/00 , H01L21/768 , H01L27/10 , H01L29/06 , H01L29/73
CPC分类号： G11C23/00 , B82Y10/00 , G11C13/025 , G11C2213/16 , G11C2213/81 , H01H1/0094 , H01L21/76838 , H01L27/10 , Y10S977/724 , Y10S977/742 , Y10S977/796 , Y10S977/856 , Y10S977/888 , Y10S977/943 , Y10T428/24893 , Y10T428/24917
摘要： Electromechanical circuits, such as memory cells, and methods for making same are disclosed. The circuits include a structure having electrically conductive traces and supports extending from a surface of the substrate, and nanotube ribbons suspended by the supports that cross the electrically conductive traces, wherein each ribbon comprises one or more nanotubes. The electro-mechanical circuit elements are made by providing a structure having electrically conductive traces and supports, in which the supports extend from a surface of the substrate. A layer of nanotubes is provided over the supports, and portions of the layer of nanotubes are selectively removed to form ribbons of nanotubes that cross the electrically conductive traces. Each ribbon includes one or more nanotubes.
摘要翻译：公开了诸如存储单元的机电电路及其制造方法。这些电路包括具有导电迹线和从衬底表面延伸的支撑体的结构，以及由支撑体悬挂的穿过导电迹线的纳米管带，其中每个带包括一个或多个纳米管。电 - 机械电路元件通过提供具有导电迹线和支撑件的结构来制造，其中支撑件从基板的表面延伸。在载体上提供一层纳米管，并且选择性地去除纳米管层的部分以形成穿过导电迹线的纳米管带。每个带包括一个或多个纳米管。

68. 发明授权

US06774052B2 Method of making nanotube permeable base transistor 失效
标题翻译：制造纳米管可渗透晶体管的方法
公开(公告)号：US06774052B2
公开(公告)日：2004-08-10
申请号：US10174889
申请日：2002-06-19
申请人： Bernhard Vögeli , Thomas Rueckes , Brent M. Segal
发明人： Bernhard Vögeli , Thomas Rueckes , Brent M. Segal
IPC分类号： H01L2131
CPC分类号： H01L51/0504 , B82Y10/00 , H01L29/7722 , H01L51/0048 , Y10S438/903 , Y10S977/743
摘要： A method of making a permeable base transistor (PBT) is disclosed. According to the method, a semiconductor substrate is provided, a base layer is provided on the substrate, and a semiconductor layer is grown over the base layer. The base layer includes metallic nanotubes, which may be grown or deposited on the semiconductor substrate. The nanotube base layer separates emitter and collector layers of semiconductor material.
摘要翻译：公开了一种制造可渗透的基极晶体管（PBT）的方法。根据该方法，提供半导体基板，在基板上设置基底层，在基底层上生长半导体层。基层包括可以在半导体衬底上生长或沉积的金属纳米管。纳米管基层分离半导体材料的发射极和集电极层。

69. 发明授权

US06643165B2 Electromechanical memory having cell selection circuitry constructed with nanotube technology 有权
公开(公告)号：US06643165B2
公开(公告)日：2003-11-04
申请号：US09915173
申请日：2001-07-25
申请人： Brent M. Segal , Darren K. Brock , Thomas Rueckes
发明人： Brent M. Segal , Darren K. Brock , Thomas Rueckes
IPC分类号： G11C1100
CPC分类号： G11C23/00 , B82Y10/00 , G11C13/025 , G11C2213/77 , G11C2213/81 , H01H1/0094 , H01L27/10 , H01L27/1203 , Y10S977/734 , Y10S977/742 , Y10S977/765 , Y10S977/943
摘要： A memory system having electromechanical memory cells and decoders is disclosed. A decoder circuit selects at least one of the memory cells of an array of such cells. Each cell in the array is a crossbar junction at least one element of which is a nanotube or a nanotube ribbon. The decoder circuit is constructed of crossbar junctions at least one element of each junction being a nanotube or a nanotube ribbon.

70. 发明授权

US08310015B2 Sensor platform using a horizontally oriented nanotube element 有权
标题翻译：传感器平台采用水平取向的纳米管元件
公开(公告)号：US08310015B2
公开(公告)日：2012-11-13
申请号：US11333426
申请日：2006-01-17
申请人： Brent M. Segal , Thomas Rueckes , Bernhard Vogeli , Darren K. Brock , Venkatachalam C. Jaiprakash , Claude L. Bertin
发明人： Brent M. Segal , Thomas Rueckes , Bernhard Vogeli , Darren K. Brock , Venkatachalam C. Jaiprakash , Claude L. Bertin
IPC分类号： H01L29/82
CPC分类号： G01N27/4146 , B82Y15/00 , G11C13/025 , Y10S977/902 , Y10S977/904 , Y10S977/92 , Y10S977/921 , Y10S977/922 , Y10S977/924 , Y10T29/43 , Y10T29/49082
摘要： Sensor platforms and methods of making them are described, and include platforms having horizontally oriented sensor elements comprising nanotubes or other nanostructures, such as nanowires. Under certain embodiments, a sensor element has an affinity for an analyte. Under certain embodiments, such a sensor element comprises one or more pristine nanotubes, and, under certain embodiments, it comprises derivatized or functionalized nanotubes. Under certain embodiments, a sensor is made by providing a support structure; providing a collection of nanotubes on the structure; defining a pattern within the nanotube collection; removing part of the collection so that a patterned collection remains to form a sensor element; and providing circuitry to electrically sense the sensor's electrical characterization. Under certain embodiments, the sensor element comprises pre-derivatized or pre-functionalized nanotubes. Under certain embodiments, sensor material is derivatized or functionalized after provision on the structure or after patterning. Under certain embodiments, a large-scale array includes multiple sensors.
摘要翻译：描述了传感器平台及其制造方法，并且包括具有包括纳米管或其他纳米结构（例如纳米线）的水平定向的传感器元件的平台。在某些实施方案中，传感器元件对分析物具有亲和力。在某些实施方案中，这种传感器元件包括一个或多个原始纳米管，并且在某些实施方案中，其包含衍生化或官能化的纳米管。在某些实施例中，通过提供支撑结构来制造传感器; 在结构上提供纳米管的集合; 定义纳米管集合内的图案; 去除部分集合，使得图案化的集合保持形成传感器元件; 以及提供用于电感测传感器电特性的电路。在某些实施方案中，传感器元件包括预衍生的或预功能化的纳米管。在某些实施方案中，传感器材料在提供在结构上或在图案化之后被衍生化或官能化。在某些实施例中，大规模阵列包括多个传感器。

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