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61. 发明授权

US4600492A Magnet driving method and device for same 失效
标题翻译：磁铁驱动方法及装置相同
公开(公告)号：US4600492A
公开(公告)日：1986-07-15
申请号：US758505
申请日：1985-07-24
申请人： Hirosuke Ooshio , Tetsuo Aikawa , Hidetaka Jo , Haruo Okano , Takashi Yamazaki
发明人： Hirosuke Ooshio , Tetsuo Aikawa , Hidetaka Jo , Haruo Okano , Takashi Yamazaki
IPC分类号： C23C14/36 , C23C14/35 , H01J37/34
CPC分类号： H01J37/3455 , H01J37/3408
摘要： A plurality of bar-like magnets are arranged in a vacuum chamber at an equal space interval to form a plurality of strong magnetic fields in a stripe-pattern form and the magnets are moved reciprocally in the direction of arrangement of the magnetic fields while changing gradually the stop points of the magnets over a work to be processed by etching or sputtering in a step-like manner so that the integral effect of each magnetic field acting on the work is uniform over the entire region of the work.
摘要翻译：多个棒状磁体以等间距布置在真空室中，以形成条纹图案形式的多个强磁场，并且磁体在磁场的排列方向上往复移动，同时逐渐变化通过蚀刻或溅射以阶梯状方式处理的工件上的磁体的停止点，使得作用在工件上的每个磁场的整体效应在工件的整个区域上是均匀的。

62. 发明授权

US4442338A Plasma etching apparatus 失效
标题翻译：等离子刻蚀装置
公开(公告)号：US4442338A
公开(公告)日：1984-04-10
申请号：US296305
申请日：1981-08-26
申请人： Takashi Yamazaki
发明人： Takashi Yamazaki
IPC分类号： C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065 , B23K9/00 , C23F1/02
CPC分类号： H01J37/32 , Y10S422/906
摘要： Disclosed ia a plasma etching apparatus in which an etching chamber accomodates a pair of parallel flat plate electrodes facing each other. The etching chamber is also provided with a device for applying high frequency power to one of the electrodes and a system for introducing a reactive gas. An after-treatment chamber is connected to the etching chamber and provided with a system for introducing a heated gas into the interior, a partition means for hermetically partitioning the etching chamber and after-treatment chamber, and a system for transporting the workpiece in the etching chamber into the after-treatment chamber.
摘要翻译：公开了一种等离子体蚀刻装置，其中蚀刻室容纳彼此面对的一对平行平板电极。蚀刻室还设置有用于向一个电极施加高频功率的装置和用于引入反应气体的系统。后处理室连接到蚀刻室，并且设置有用于将加热气体引入内部的系统，用于气蚀分隔蚀刻室和后处理室的分隔装置，以及用于在蚀刻中输送工件的系统进入后处理室。

63. 发明授权

US09899385B2 Semiconductor integrated circuit and manufacturing method thereof 有权
公开(公告)号：US09899385B2
公开(公告)日：2018-02-20
申请号：US13480956
申请日：2012-05-25
申请人： Takashi Yamazaki , Shimpei Tsujikawa
发明人： Takashi Yamazaki , Shimpei Tsujikawa
IPC分类号： H01L29/66 , H01L27/092 , H01L21/8238 , H01L27/02
CPC分类号： H01L27/0922 , H01L21/823842 , H01L27/0266 , H01L27/0285
摘要： A semiconductor integrated circuit includes a protected circuit connected to two power supply lines that provide a supply voltage, a detecting circuit that includes a resistive element and a capacitive element connected in series between two power supply lines and detects a surge generated in the power supply line based on potential variation of an inter-element connecting node, and a protection transistor that is connected between two power supply lines and has a control electrode connected to an output of the detecting circuit. The protection transistor has the control electrode formed from a different electrode material having a work function difference from a transistor of the same channel conductivity type in the protected circuit, to have a different threshold voltage from the transistor so that the amount of leakage current per unit channel width may be smaller compared with the transistor.

64. 发明申请

US20140321668A1 SIGNAL PROCESSING DEVICE 有权
标题翻译：信号处理装置
公开(公告)号：US20140321668A1
公开(公告)日：2014-10-30
申请号：US14359725
申请日：2012-06-04
申请人： Masaru Kimura , Kohei Teramoto , Takashi Yamazaki , Takuya Taniguchi
发明人： Masaru Kimura , Kohei Teramoto , Takashi Yamazaki , Takuya Taniguchi
IPC分类号： H03G3/00 , H04R3/04
CPC分类号： H03G3/00 , H03G5/165 , H03G9/005 , H03G9/025 , H04R3/00 , H04R3/007 , H04R3/04 , H04R29/00 , H04R29/001
摘要： A signal processing device includes an excessive input estimating unit 102 that estimates excessive input of a target signal, a controller 105 that calculates frequency characteristics which will lessen the excessive input of the target signal from the excessive input information estimated by the excessive input estimating unit 102, and a frequency characteristic modification unit 103 that modifies the frequency characteristics of the target signal in accordance with the frequency characteristics the controller 105 calculates.
摘要翻译：信号处理装置包括：估计目标信号的过度输入的过度输入估计单元102;计算频率特性的控制器105，其根据由过量输入估计单元102估计出的过大的输入信息来减小目标信号的过度输入以及根据控制器105计算的频率特性来修正目标信号的频率特性的频率特性修改单元103。

65. 发明授权

US08780193B2 Physical properties measuring method and apparatus 有权
标题翻译：物理性能测量方法和装置
公开(公告)号：US08780193B2
公开(公告)日：2014-07-15
申请号：US13071797
申请日：2011-03-25
申请人： Takashi Yamazaki , Takeshi Soeda
发明人： Takashi Yamazaki , Takeshi Soeda
IPC分类号： H04N7/18 , H01J37/28
CPC分类号： H04N7/18 , G06T7/62 , G06T7/66 , G06T2207/10056 , G06T2207/30108 , H01J37/26 , H01J37/28 , H01J37/295 , H01J2237/22 , H01J2237/24578 , H01J2237/2805
摘要： A physical properties measuring method includes: acquiring an experimental convergent beam electron diffraction image of a sample by using a transmission electron microscope; calculating Zernike moment intensities of the experimental convergent beam electron diffraction image; and comparing the Zernike moment intensities of the experimental convergent beam electron diffraction image with Zernike moment intensities of calculated convergent beam electron diffraction images calculated on changed physical properties of the sample.
摘要翻译：物理性质测量方法包括：使用透射电子显微镜获取样品的实验收敛束电子衍射图像; 计算实验收敛束电子衍射图像的泽尼克力矩; 并且将实验收敛束电子衍射图像的泽尼克力矩与用样品的改变的物理性质计算的计算的收敛束电子衍射图像的泽尼克力矩进行比较。

66. 发明授权

US08766515B2 Flexural vibrating reed, flexural vibrator, and piezoelectric device 失效
标题翻译：弯曲振动片，弯曲振动器和压电装置
公开(公告)号：US08766515B2
公开(公告)日：2014-07-01
申请号：US13125000
申请日：2009-10-22
申请人： Makoto Furuhata , Takeo Funakawa , Takashi Yamazaki
发明人： Makoto Furuhata , Takeo Funakawa , Takashi Yamazaki
IPC分类号： H03H9/21
CPC分类号： H03H9/21 , H03H9/0547 , H03H9/1021 , H03H9/19 , H03H9/215
摘要： Deterioration of the Q value caused by the thermoelastic effect is suppressed. Since a first depth of a first groove and a second depth of a second groove are smaller than a distance between a surface including a third surface and a surface including a fourth surface, the first and second grooves do not penetrate between the surface including the third surface and the surface including the fourth surface. In addition, the sum of the first depth of the first groove and the second depth of the second groove is greater than the distance between the third and fourth surfaces, a heat transfer path between a first expandable portion (the first surface) and a second expandable portion (the second surface) cannot be formed as a straight line. As such, the heat transfer path between the first expandable portion (the first surface) and a second expandable portion (the second surface) is made to detour to the first and second grooves and and thus be lengthened.
摘要翻译：抑制由热弹性效应引起的Q值的劣化。由于第一凹槽的第一深度和第二凹槽的第二深度小于包括第三表面的表面和包括第四表面的表面之间的距离，所以第一和第二凹槽不会穿过包括第三凹槽的表面表面和包括第四表面的表面。此外，第一凹槽的第一深度和第二凹槽的第二深度之和大于第三和第四表面之间的距离，第一可膨胀部分（第一表面）和第二凹槽之间的传热路径可膨胀部分（第二表面）不能形成为直线。因此，使第一可膨胀部分（第一表面）和第二可膨胀部分（第二表面）之间的传热路径绕第一和第二槽弯曲并因此被延长。

67. 发明申请

US20140132377A1 ALLOY FOR R-T-B-BASED RARE EARTH SINTERED MAGNET, PROCESS OF PRODUCING ALLOY FOR R-T-B-BASED RARE EARTH SINTERED MAGNET, ALLOY MATERIAL FOR R-T-B-BASED RARE EARTH SINTERED MAGNET, R-T-B-BASED RARE EARTH SINTERED MAGNET, PROCESS OF PRODUCING R-T-B-BASED RARE EARTH SINTERED MAGNET, AND MOTOR 审中-公开
标题翻译：用于基于RTB的稀土烧结磁体的合金，用于基于RTB的稀土烧结磁体的合金的制造方法，用于基于RTB的稀土烧结磁体的合金材料，基于RTB的稀土烧结磁体，生产基于RTB的稀土的方法烧结磁铁和电机
公开(公告)号：US20140132377A1
公开(公告)日：2014-05-15
申请号：US14126770
申请日：2012-07-06
申请人： Kenichiro Nakajima , Takashi Yamazaki
发明人： Kenichiro Nakajima , Takashi Yamazaki
IPC分类号： H01F1/01
CPC分类号： H01F1/0536 , B22F3/16 , B22F3/24 , B22F2003/248 , C21D6/00 , C22C33/0278 , C22C38/002 , C22C38/005 , C22C38/02 , C22C38/06 , C22C38/10 , C22C38/16 , H01F1/01 , H01F1/0577 , H01F1/058 , H01F41/0293 , H02K1/02
摘要： An alloy for R-T-B-based rare earth sintered magnets which contains R which is a rare earth element; T which is a transition metal essentially containing Fe; a metallic element M containing one or more metals selected from Al, Ga and Cu; B and inevitable impurities, in which R accounts for 13 at % to 15 at %, B accounts for 4.5 at % to 6.2 at %, M accounts for 0.1 at % to 2.4 at %, T accounts for balance, a proportion of Dy in all rare earth elements is in a range of 0 at % to 65 at %, and the following Formula 1 is satisfied, 0.0049Dy+0.34≦B/TRE≦0.0049Dy+0.36 Formula 1 wherein Dy represents a concentration (at %) of a Dy element, B represents a concentration (at %) of a boron element, and TRE represents a concentration (at %) of all the rare earth elements.
摘要翻译：用于R-T-B系稀土烧结磁体的合金，其含有作为稀土元素的R; T是基本含有Fe的过渡金属; 含有选自Al，Ga和Cu中的一种或多种金属的金属元素M; B和不可避免的杂质，其中R占13原子％至15原子％，B占4.5原子％至6.2原子％，M占0.1原子％至2.4原子％，T占余量，Dy的比例所有的稀土元素都在0at％至65at％的范围内，满足下列公式1：0.0049Dy + 0.34＆amp; NlE; B / TRE＆nlE; 0.0049Dy + 0.36式1其中Dy表示浓度（at％）的Dy元素，B表示硼元素的浓度（at％），TRE表示所有稀土元素的浓度（at％）。

68. 发明授权

US08622198B2 Component transferring apparatus and IC handler 有权
标题翻译：组件传送设备和IC处理程序
公开(公告)号：US08622198B2
公开(公告)日：2014-01-07
申请号：US13275619
申请日：2011-10-18
申请人： Takashi Yamazaki , Hiroaki Fujimori , Naohisa Maeda , Daisuke Kirihara , Satoshi Nakamura , Masami Maeda
发明人： Takashi Yamazaki , Hiroaki Fujimori , Naohisa Maeda , Daisuke Kirihara , Satoshi Nakamura , Masami Maeda
IPC分类号： B65G47/34
CPC分类号： G01R31/2893 , G05B2219/37216 , G05B2219/40564 , G05B2219/45026
摘要： An apparatus includes: a retainer moving between a shuttle and a socket; a presser holding a component; an adjuster moving the presser; a socket mark near the socket; a hand mark near the socket mark when the retainer is at a component mounting position; a first camera photographing a first image including the component and hand mark; a second camera photographing a second image including the socket mark and socket, and a third image including the socket mark and hand mark; a first calculator obtaining a first relative position between the socket mark and socket from the second image; a second calculator obtaining a second relative position between the socket mark and hand mark from the third image; and a third calculator obtaining a third relative position between the hand mark and component from the first image. The adjuster corrects the component's position based on the relative positions.
摘要翻译：一种装置包括：保持件在梭子和插座之间移动; 持有组件的压脚; 调节器移动压脚; 插座附近的插座标记; 当保持器处于部件安装位置时，在插座标记附近的手标记; 拍摄包括所述部件和手标记的第一图像的第一相机; 拍摄包括插座标记和插座的第二图像的第二相机以及包括插座标记和手标的第三图像; 第一计算器，从所述第二图像获得所述插座标记和所述插座之间的第一相对位置; 第二计算器，从所述第三图像获得所述插座标记与手标记之间的第二相对位置; 以及第三计算器，从所述第一图像获得所述手标和分量之间的第三相对位置。调整器根据相对位置校正组件的位置。

69. 发明授权

US08546960B2 Manufacturing method of semiconductor device, semiconductor device and mobile communication device 有权
标题翻译：半导体器件，半导体器件和移动通信器件的制造方法
公开(公告)号：US08546960B2
公开(公告)日：2013-10-01
申请号：US13353798
申请日：2012-01-19
申请人： Takashi Yamazaki
发明人： Takashi Yamazaki
IPC分类号： H01L23/29 , H01L23/02 , H01L23/28 , H01L21/00
CPC分类号： H01L23/053 , H01L23/295 , H01L23/49827 , H01L23/552 , H01L24/73 , H01L2224/32225 , H01L2224/48227 , H01L2224/73265 , H01L2924/15311 , H01L2924/3025 , H01L2924/00012 , H01L2924/00
摘要： A manufacturing method of a semiconductor device includes: sealing a semiconductor chip with a sealing resin containing a filler; exposing a part of the filler; etching at least a part of the exposed filler; and forming a metal film at least at a part of a surface of the sealing resin including inner surfaces of holes formed at the surface of the sealing resin by the etching.
摘要翻译：半导体器件的制造方法包括：用包含填料的密封树脂密封半导体芯片; 暴露一部分填料; 蚀刻暴露的填料的至少一部分; 以及至少在密封树脂的表面的一部分处形成金属膜，其包括通过蚀刻在密封树脂的表面形成的孔的内表面。

70. 发明申请

US20130154424A1 ALLOY MATERIAL FOR R-T-B-BASED RARE EARTH PERMANENT MAGNET, METHOD FOR PRODUCING R-T-B-BASED RARE EARTH PERMANENT MAGNET, AND MOTOR 审中-公开
标题翻译：用于R-T-B的稀土永磁体的合金材料，用于生产基于R-T-B的稀土永磁体的方法和电动机
公开(公告)号：US20130154424A1
公开(公告)日：2013-06-20
申请号：US13820423
申请日：2011-08-12
申请人： Kenichiro Nakajima , Takashi Yamazaki
发明人： Kenichiro Nakajima , Takashi Yamazaki
IPC分类号： H02K57/00 , H01F1/01 , H01F41/02
CPC分类号： H01F1/01 , C22C33/0278 , C22C38/005 , C22C38/06 , C22C38/10 , C22C38/16 , C22C2202/02 , H01F1/0577 , H01F41/0266 , H02K99/20
摘要： An alloy material for an R-T-B-based rare earth permanent magnet, including (i) an R-T-B-based alloy composed of R being two or more members selected from rare earth elements, T being a transition metal that essentially contains Fe, B and unavoidable impurities, and in which the Dy content is more than 10% by mass and less than 31% by mass, and (ii) a metal powder. Also disclosed is a method for producing an R-T-B-based rare earth permanent magnet and a motor provided with the R-T-B-based rare earth permanent magnet.
摘要翻译：一种用于RTB的稀土永磁体的合金材料，其包括（i）由R组成的RTB基合金，其为选自稀土元素的两种或更多种，T为基本含有Fe，B和不可避免的杂质的过渡金属，其中Dy含量大于10质量％且小于31质量％，和（ii）金属粉末。还公开了一种R-T-B系稀土类永久磁铁的制造方法和配置有R-T-B系稀土类永久磁铁的电动机。

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