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61. 发明授权

US08507361B2 Fabrication of substrates with a useful layer of monocrystalline semiconductor material 有权
标题翻译：用有用的单晶半导体材料层制造衬底
公开(公告)号：US08507361B2
公开(公告)日：2013-08-13
申请号：US12984895
申请日：2011-01-05
申请人： Fabrice Letertre , Bruno Ghyselen , Pierre Rayssac , Gisèle Rayssac
发明人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
IPC分类号： H01L21/30
CPC分类号： H01L21/187 , H01L21/76254
摘要： The invention relates to methods for fabricating a semiconductor substrate. In one embodiment, the method includes transferring a seed layer on to a support substrate; and depositing a working layer on the seed layer to form a composite substrate. The seed layer is made of a material that accommodates thermal expansion of the support substrate and of the working layer. In another embodiment, the method includes providing a source substrate with a weakened zone defining a nucleation layer, bonding a support substrate to the source substrate, detaching the nucleation layer and support substrate at the weakened zone by applying laser irradiation stress, depositing a semiconductor material upon the nucleation layer, bonding a target substrate to the deposited layer and removing the support substrate and nucleation layer. The result is a semiconductor substrate that includes the layer of semiconductor material on a support or target substrate.
摘要翻译：本发明涉及制造半导体衬底的方法。在一个实施例中，该方法包括将种子层转移到支撑衬底上; 以及在种子层上沉积工作层以形成复合衬底。种子层由容纳支撑基板和工作层的热膨胀的材料制成。在另一个实施例中，该方法包括：提供源极基底，其具有限定成核层的弱化区域，将支撑基底结合到源极基底，通过施加激光照射应力在弱化区域分离成核层和支撑基底，沉积半导体材料在成核层上，将目标衬底粘合到沉积层上并去除支撑衬底和成核层。结果是在支撑体或靶基板上包括半导体材料层的半导体衬底。

62. 发明授权

US07622330B2 Semiconductor substrates having useful and transfer layers 有权
标题翻译：具有有用和转移层的半导体衬底
公开(公告)号：US07622330B2
公开(公告)日：2009-11-24
申请号：US12187005
申请日：2008-08-06
申请人： Bruno Ghyselen , Fabrice Letertre
发明人： Bruno Ghyselen , Fabrice Letertre
IPC分类号： H01L21/44 , H01L21/76 , H01L21/30
CPC分类号： H01L21/3148 , H01L21/318 , H01L21/76254 , H01L29/1608 , H01L29/165 , H01L29/2003 , H01L29/267 , Y10T428/24479
摘要： A method of fabricating composite substrates by associating a plurality of transfer layers in spaced relation upon a single intermediate support; providing a support layer on each transfer layer to form a composite substrate; and detaching the composite substrates from the intermediate support. The support layer is made of a deposited material that has a lower quality than that of the intermediate support. A bonding layer may be included on one of the intermediate support or the useful layer, or both, to facilitate bonding of the layers. The final substrates are useful in optic, electronic, or optoelectronic applications.
摘要翻译：一种通过将间隔关系的多个转移层与单个中间支撑体相关联来制造复合衬底的方法; 在每个转移层上提供支撑层以形成复合衬底; 并将复合基材从中间载体上分离出来。支撑层由具有比中间支撑件低的质量的沉积材料制成。粘合层可以包括在中间支撑体或有用层之一或两者上，以便于层的粘合。最终的底物可用于光学，电子或光电子应用。

63. 发明授权

US07422957B2 Semiconductor substrates having useful and transfer layers 有权
标题翻译：具有有用和转移层的半导体衬底
公开(公告)号：US07422957B2
公开(公告)日：2008-09-09
申请号：US11402052
申请日：2006-04-12
申请人： Bruno Ghyselen , Fabrice Letertre
发明人： Bruno Ghyselen , Fabrice Letertre
IPC分类号： H01L21/76 , H01L21/301
CPC分类号： H01L21/3148 , H01L21/318 , H01L21/76254 , H01L29/1608 , H01L29/165 , H01L29/2003 , H01L29/267 , Y10T428/24479
摘要： Methods for fabricating final substrates for use in optics, electronics, or optoelectronics are described. The method includes forming a zone of weakness beneath a surface of a source substrate to define a transfer layer; detaching the transfer layer from the source substrate along the zone of weakness; depositing a useful layer upon the transfer layer; and depositing a support material on the useful layer to form the final substrate. The useful layer may be deposited on the transfer layer before or after detaching the transfer layer from the source substrate. The useful layer is typically made of a material having a large band gap, and comprises at least one of gallium nitride, or aluminum nitride, or of compounds of at least two elements including at least one element of aluminum, indium, and gallium. The zone of weakness may advantageously be formed by implanting atomic species into the source substrate.
摘要翻译：描述了用于制造用于光学，电子学或光电子学的最终衬底的方法。该方法包括在源极衬底的表面下方形成弱化区以限定转移层; 沿着弱化区域将转移层从源底物分离; 在转移层上沉积有用的层; 以及在有用层上沉积支撑材料以形成最终的基底。在从源极衬底分离转移层之前或之后，有用层可以沉积在转移层上。有用层通常由具有大带隙的材料制成，并且包括氮化镓或氮化铝中的至少一种，或包括至少两种元素的化合物，包括至少一种铝，铟和镓元素。可以通过将原子物质注入到源底物中来有利地形成弱点区域。

64. 发明授权

US07235462B2 Methods for fabricating a substrate 有权
标题翻译：制造基板的方法
公开(公告)号：US07235462B2
公开(公告)日：2007-06-26
申请号：US10922997
申请日：2004-08-23
申请人： Fabrice Letertre , Bruno Ghyselen
发明人： Fabrice Letertre , Bruno Ghyselen
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/0445 , H01L21/76254 , H01L29/1608
摘要： A method is provided for fabricating a substrate for optics, electronics, or opto-electronics. This method includes the steps of implanting atomic species into a face of a source substrate to form a weakened zone therein corresponding to the depth of penetration of the atomic species; transferring the seed layer on to a support substrate by bonding a face of the support substrate to the face of the source substrate and detaching the seed layer from the source substrate; depositing a working layer on the seed layer to form a composite substrate comprising the support substrate, seed layer and working layer; and detaching the seed layer and the working layer from the support substrate to form a substrate. Advantageously, the support substrate comprises a material having a thermal expansion value of about 0.7 to 3 times the coefficient value of the working layer, and the seed layer includes a crystal lattice parameter sufficient for the epitaxial growth of the working layer onto the seed layer such that the working layer has a dislocation concentration of less than about 107/cm2.
摘要翻译：提供了一种用于制造用于光学，电子学或光电子学的衬底的方法。该方法包括以下步骤：将原子物质植入源底物的表面以在其中形成对应于原子物质的穿透深度的弱化区; 通过将支撑基板的表面粘合到源极基板的表面并将种子层与源极基板分离，将晶种层转移到支撑基板上; 在所述种子层上沉积工作层以形成包括所述支撑衬底，种子层和工作层的复合衬底; 以及将种子层和工作层从支撑基板分离以形成基板。有利地，支撑衬底包括具有约0.7至3倍工作层系数值的热膨胀值的材料，并且晶种层包括足以使工作层外延生长到晶种层上的晶格参数，如工作层的位错浓度小于约10 7 / cm 2。

65. 发明授权

US07071029B2 Methods for fabricating final substrates 有权
标题翻译：制造最终基板的方法
公开(公告)号：US07071029B2
公开(公告)日：2006-07-04
申请号：US11009138
申请日：2004-12-13
申请人： Bruno Ghyselen , Fabrice Letertre
发明人： Bruno Ghyselen , Fabrice Letertre
IPC分类号： H01L21/44 , H01L21/76 , H01L21/30
CPC分类号： H01L21/3148 , H01L21/318 , H01L21/76254 , H01L29/1608 , H01L29/165 , H01L29/2003 , H01L29/267 , Y10T428/24479
摘要： Methods for fabricating final substrates for use in optics, electronics, or optoelectronics are described. The method includes forming a zone of weakness beneath a surface of a source substrate to define a transfer layer; detaching the transfer layer from the source substrate along the zone of weakness; depositing a useful layer upon the transfer layer; and depositing a support material on the useful layer to form the final substrate. The useful layer may be deposited on the transfer layer before or after detaching the transfer layer from the source substrate. The useful layer is typically made of a material having a large band gap, and comprises at least one of gallium nitride, or aluminum nitride, or of compounds of at least two elements including at least one element of aluminum, indium, and gallium. The zone of weakness may advantageously be formed by implanting atomic species into the source substrate.
摘要翻译：描述了用于制造用于光学，电子学或光电子学的最终衬底的方法。该方法包括在源极衬底的表面下方形成弱化区以限定转移层; 沿着弱化区域将转移层从源底物分离; 在转移层上沉积有用的层; 以及在有用层上沉积支撑材料以形成最终的基底。在从源极衬底分离转移层之前或之后，有用层可以沉积在转移层上。有用层通常由具有大带隙的材料制成，并且包括氮化镓或氮化铝中的至少一种，或包括至少两种元素的化合物，包括至少一种铝，铟和镓元素。可以通过将原子物质注入到源底物中来有利地形成弱点区域。

66. 发明申请

US20060035440A1 Method for manufacturing a free-standing substrate made of monocrystalline semiconductor material 有权
标题翻译：制造由单晶半导体材料制成的独立基板的方法
公开(公告)号：US20060035440A1
公开(公告)日：2006-02-16
申请号：US11212795
申请日：2005-08-29
申请人： Bruno Ghyselen , Fabrice Letertre , Carlos Mazure
发明人： Bruno Ghyselen , Fabrice Letertre , Carlos Mazure
IPC分类号： H01L21/30 , H01L21/20
CPC分类号： C30B29/36 , H01L21/76254
摘要： A method for manufacturing a free-standing substrate made of a semiconductor material. A first assembly is provided and it includes a relatively thinner nucleation layer of a first material, a support of a second material, and a removable bonding interface defined between facing surfaces of the nucleation layer and support. A substrate of a relatively thicker layer of a third material is grown, by epitaxy on the nucleation layer, to form a second assembly with the substrate attaining a sufficient thickness to be free-standing. The third material is preferably a monocrystalline material. Also, the removable character of the bonding interface is preserved with at least the substrate being heated to an epitaxial growth temperature. The coefficients of thermal expansion of the second and third materials are selected to be different from each other by a thermal expansion differential, determined as a function of the epitaxial growth temperature or subsequent application of external mechanical stresses, such that, as the second assembly cools from the epitaxial growth temperature, stresses are induced in the removable bonding interface to facilitate detachment of the nucleation layer from the substrate.
摘要翻译：一种制造由半导体材料制成的自立式基板的方法。提供了第一组件，并且其包括第一材料的相对更薄的成核层，第二材料的支撑体和限定在成核层和支撑体的相对表面之间的可去除的结合界面。通过在成核层上外延生长相对较厚的第三材料层的衬底，以形成第二组件，其中衬底获得足够的厚度以使其独立。第三种材料优选是单晶材料。而且，至少将衬底加热到外延生长温度来保存接合界面的可去除特性。第二和第三材料的热膨胀系数被选择为相互不同的热膨胀差异，其被确定为外延生长温度的函数或随后的外部机械应力的应用，使得当第二组件冷却时从外延生长温度，在可除去的结合界面中诱发应力以促进成核层与基底的分离。

67. 发明授权

US07655537B2 Semiconductor substrates having useful and transfer layers 有权
标题翻译：具有有用和转移层的半导体衬底
公开(公告)号：US07655537B2
公开(公告)日：2010-02-02
申请号：US12186948
申请日：2008-08-06
申请人： Bruno Ghyselen , Fabrice Letertre
发明人： Bruno Ghyselen , Fabrice Letertre
IPC分类号： H01L21/30
CPC分类号： H01L21/3148 , H01L21/318 , H01L21/76254 , H01L29/1608 , H01L29/165 , H01L29/2003 , H01L29/267 , Y10T428/24479
摘要： A method of fabricating composite substrates by associating a transfer layer with an intermediate support to form an intermediate substrate of predetermined thickness with the transfer layer having a free surface; providing a sample carrier having a surface and a recess that has a depth that is approximate the same as the predetermined thickness of the intermediate substrate so that the transfer layer free surface is positioned flush with the sample carrier surface; providing a support layer both on the transfer layer free surface and on a portion of the sample carrier surface surrounding the recess; removing the portion of the support layer that extends beyond the intermediate substrate; and detaching the transfer layer and support layer from its intermediate support to form the composite substrate. The support layer is made of a deposited material that has a lower quality than that of the intermediate support. A bonding layer may be included on one of the intermediate support or the useful layer, or both, to facilitate bonding of the layers. The final substrates are useful in optic, electronic, or optoelectronic applications.
摘要翻译：一种通过使转印层与中间载体缔合以形成具有预定厚度的中间基底的方法，该转印层具有自由表面; 提供具有表面的样品载体和具有与中间基板的预定厚度大致相同的深度的凹部，使得转印层自由表面与样品载体表面齐平; 在转移层自由表面和围绕凹部的样品载体表面的一部分上提供支撑层; 移除延伸超过中间基板的支撑层的部分; 并且从中间支撑件分离转移层和支撑层以形成复合衬底。支撑层由具有比中间支撑件低的质量的沉积材料制成。粘合层可以包括在中间支撑体或有用层之一或两者上，以便于层的粘合。最终的底物可用于光学，电子或光电子应用。

68. 发明授权

US07407869B2 Method for manufacturing a free-standing substrate made of monocrystalline semiconductor material 有权
标题翻译：制造由单晶半导体材料制成的独立基板的方法
公开(公告)号：US07407869B2
公开(公告)日：2008-08-05
申请号：US11212795
申请日：2005-08-29
申请人： Bruno Ghyselen , Fabrice Letertre , Carlos Mazure
发明人： Bruno Ghyselen , Fabrice Letertre , Carlos Mazure
IPC分类号： H01L21/365
CPC分类号： C30B29/36 , H01L21/76254
摘要： A method for manufacturing a free-standing substrate made of a semiconductor material. A first assembly is provided and it includes a relatively thinner nucleation layer of a first material, a support of a second material, and a removable bonding interface defined between facing surfaces of the nucleation layer and support. A substrate of a relatively thicker layer of a third material is grown, by epitaph on the nucleation layer, to form a second assembly with the substrate attaining a sufficient thickness to be free-standing. The third material is preferably a monocrystalline material. Also, the removable character of the bonding interface is preserved with at least the substrate being heated to an epitaxial growth temperature. The coefficients of thermal expansion of the second and third materials are selected to be different from each other by a thermal expansion differential, determined as a function of the epitaxial growth temperature or subsequent application of external mechanical stresses, such that, as the second assembly cools from the epitaxial growth temperature, stresses are induced in the removable bonding interface to facilitate detachment of the nucleation layer from the substrate.
摘要翻译：一种制造由半导体材料制成的自立式基板的方法。提供了第一组件，并且其包括第一材料的相对更薄的成核层，第二材料的支撑体和限定在成核层和支撑体的相对表面之间的可去除的结合界面。通过在成核层上外延生长相对较厚的第三材料层的衬底，以形成第二组件，其中衬底获得足够的厚度以使其独立。第三种材料优选是单晶材料。而且，至少将衬底加热到外延生长温度来保存接合界面的可去除特性。第二和第三材料的热膨胀系数被选择为相互不同的热膨胀差异，其被确定为外延生长温度的函数或随后的外部机械应力的应用，使得当第二组件冷却时从外延生长温度，在可除去的结合界面中诱发应力以促进成核层与基底的分离。

69. 发明授权

US07262113B2 Methods for transferring a useful layer of silicon carbide to a receiving substrate 有权
标题翻译：将有用的碳化硅层转移到接收衬底的方法
公开(公告)号：US07262113B2
公开(公告)日：2007-08-28
申请号：US11196733
申请日：2005-08-04
申请人： Bruno Ghyselen , Fabrice Letertre
发明人： Bruno Ghyselen , Fabrice Letertre
IPC分类号： H01L21/30
CPC分类号： H01L21/02032 , H01L21/187 , H01L21/2007 , H01L21/26586 , H01L21/266 , H01L21/7602 , H01L21/76254
摘要： Methods for transferring a useful layer of silicon carbide to a receiving substrate are described. In an embodiment, the invention relates to a method for recycling of a silicon carbide source substrate by removal of the excess zone followed by a finishing step to prepare the source substrate for recycling and reuse. Preferably, the excess zone is removed by a thermal budget where the temperature and time of such treatment causes exfoliation of the excess zone. The finishing step is performed in a manner to provide the desired surface roughness for the substrate so that it can be recycled for re-use. The technique includes implanting at least H+ ions through a front face of a source substrate of silicon carbide with an implantation energy E greater than or equal to 95 keV and an implantation dose D chosen to form an optimal weakened zone near a mean implantation depth, the optimal weakened zone defining the useful layer and a remainder portion of the source substrate. The method also includes bonding the front face of the source substrate to a contact face of the receiving substrate, and detaching the useful layer from the remainder portion of the source substrate along the weakened zone while minimizing or avoiding forming an excess zone of silicon carbide material at the periphery of the useful layer that was not transferred to the receiving substrate during detachment.
摘要翻译：描述了将有用的碳化硅层转移到接收衬底的方法。在一个实施方案中，本发明涉及一种通过去除过量区域再循环碳化硅源衬底的方法，随后进行精整步骤以制备用于再循环和再利用的源衬底。优选地，通过热预算去除过量区域，其中这种处理的温度和时间引起过剩区域的剥离。精加工步骤以为基材提供所需的表面粗糙度的方式进行，使得其可再循环以供再利用。该技术包括将至少H + +离子注入到具有大于或等于95keV的注入能量E的碳化硅源极基底的前表面上，并且选择植入剂量D以形成最佳弱化区域，平均植入深度附近，最佳弱化区域限定有用层和源极衬底的剩余部分。该方法还包括将源极基板的正面接合到接收基板的接触面，并且沿着弱化区域将有用层与源极基板的剩余部分分离，同时最小化或避免形成碳化硅材料的过剩区域在有用层的外围，在分离期间未被转移到接收基板。

70. 发明申请

US20060216907A1 Method of fabricating a semiconductor hetero-structure 有权
公开(公告)号：US20060216907A1
公开(公告)日：2006-09-28
申请号：US11147575
申请日：2005-06-07
申请人： Ian Cayrefourcq , Fabrice Letertre , Bruno Ghyselen
发明人： Ian Cayrefourcq , Fabrice Letertre , Bruno Ghyselen
IPC分类号： H01L21/46
CPC分类号： H01L21/76254 , H01L21/76251
摘要： A method of fabricating a structure that includes at least one semiconductor material for applications in microelectronics, optoelectronics or optics. The method includes transferring, onto a support made of a first material, a thin monocrystalline layer made of a second material that differs from the first material, and performing a predetermined heat treatment carrying out at least one strengthening step on a bonding interface between the thin layer and the support. The thickness of the thin layer is selected as a function of the difference between the coefficients of thermal expansion of the first and second materials and as a function of parameters of predetermined heat treatment, such that the stresses exerted by the heat treatment on the assembly of the support and the transferred thin layer leaves the assembly intact. The method further includes depositing an additional thickness of the second material in the monocrystalline state on the thin layer to thicken it. The method is useful for fabrication of hetero-substrates with a relatively thick useful layer.

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