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61. 发明授权

US5872360A Method and apparatus using an infrared laser based optical probe for measuring electric fields directly from active regions in an integrated circuit 失效
标题翻译：使用基于红外激光的光学探针的方法和装置，用于直接从集成电路中的有源区测量电场
公开(公告)号：US5872360A
公开(公告)日：1999-02-16
申请号：US766149
申请日：1996-12-12
申请人： Mario J. Paniccia , Valluri R. Rao
发明人： Mario J. Paniccia , Valluri R. Rao
IPC分类号： G01R31/309 , G01R31/28
CPC分类号： G01R31/309
摘要： A method and an apparatus for detecting an electric field in the active regions of an integrated circuit disposed in a semiconductor. In one embodiment, a laser beam is operated at a wavelength near the band gap of a semiconductor such as silicon. The laser beam is focused onto a P-N junction, such as for example the drain of an MOS transistor, through the back side of the semiconductor substrate. As a result of photo-absorption, the laser beam is partially absorbed in the P-N junction. When an external electric field is impressed on the P-N junction, such as when for example the drain of the transistor switches, the degree of photo-absorption will be modulated in accordance with the modulation in the electric field due to the phenomenon of electro-absorption. Electro-absorption also leads to electro-refraction which leads to a modulation in the reflection coefficient for the light reflected from the P-N junction/oxide interface. The laser beam passes through the P-N junction region, reflects off the oxide interface and metal behind the junction, and returns back through the P-N junction and back out of the silicon surface. Any amplitude modulation in this reflected laser beam is detected with an optical detection system, and is attributed to a corresponding modulation in the electric field in the P-N junction due to the combined effects of electro-absorption and electro-refraction.
摘要翻译：一种用于检测设置在半导体中的集成电路的有源区域中的电场的方法和装置。在一个实施例中，激光束以接近诸如硅之类的半导体的带隙的波长工作。激光束通过半导体衬底的背面聚焦到P-N结，例如MOS晶体管的漏极。作为光吸收的结果，激光束被部分地吸收在P-N结中。当在PN结上施加外部电场时，例如当例如晶体管开关的漏极时，由于电吸收的现象，将根据电场中的调制来调制光吸收的程度。电吸收也导致电折射，这导致从P-N结/氧化物界面反射的光的反射系数的调制。激光束穿过P-N结区域，从结点后面的氧化物界面和金属反射出来，并通过P-N结返回并返回硅表面。这种反射激光束中的任何幅度调制都用光学检测系统检测，并且归因于由于电吸收和电折射的组合效应而在P-N结中的电场中的相应调制。

62. 发明申请

US20140367740A1 GERMANIUM/SILICON AVALANCHE PHOTODETECTOR WITH SEPARATE ABSORPTION AND MULTIPLICATION REGIONS 审中-公开
标题翻译：具有单独吸收和多样化区域的锗/硅玻璃光电转换器
公开(公告)号：US20140367740A1
公开(公告)日：2014-12-18
申请号：US14472241
申请日：2014-08-28
申请人： Micheal T. Morse , Olufemi I. Dosunmu , Ansheng Liu , Mario J. Paniccia
发明人： Micheal T. Morse , Olufemi I. Dosunmu , Ansheng Liu , Mario J. Paniccia
IPC分类号： H01L31/107 , H01L27/146
CPC分类号： H01L31/1075 , H01L27/14629 , H01L31/028 , H01L31/0312 , H01L31/1812 , Y02E10/547
摘要： A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.
摘要翻译：公开了一种基于半导体波导的光接收器。根据本发明的方面的装置包括吸收区域，其包括靠近第二类型的半导体区域的第一类型的半导体区域。第一类型的半导体是吸收第一波长范围内的光并且第二类型的半导体吸收在第二波长范围内的光。倍增区域被定义为接近并与吸收区域分离。乘法区域包括本征半导体区域，其中存在用于乘以在吸收区域中产生的电子的电场。

63. 发明申请

US20130195137A1 METHOD FOR ELECTRICALLY PUMPED SEMICONDUCTOR EVANESCENT LASER 有权
标题翻译：电力泵浦半导体激光器的方法
公开(公告)号：US20130195137A1
公开(公告)日：2013-08-01
申请号：US13838932
申请日：2013-03-15
申请人： John E. Bowers , Oded Cohen , Alexander W. Fang , Richard Jones , Mario J. Paniccia , Hyundai Park
发明人： John E. Bowers , Oded Cohen , Alexander W. Fang , Richard Jones , Mario J. Paniccia , Hyundai Park
IPC分类号： H01S5/30 , H01S5/34
CPC分类号： H01S5/30 , G02B2006/12121 , H01S5/021 , H01S5/026 , H01S5/0424 , H01S5/0425 , H01S5/1032 , H01S5/125 , H01S5/141 , H01S5/2214 , H01S5/223 , H01S5/34
摘要： Embodiments of a method comprising guiding an optical mode with an optical waveguide disposed in silicon, overlapping both the optical waveguide and an active semiconductor material evanescently coupled to the optical waveguide with the optical mode guided through the optical waveguide, electrically pumping the active semiconductor material to inject current directed through the active semiconductor material and through the optical mode, and generating light in the active semiconductor material in response to the injected current. Other embodiments are disclosed and claimed.
摘要翻译：一种方法的实施方案包括用设置在硅中的光波导引导光学模式，与光波导和有源半导体材料重叠，该有源半导体材料通过光波导引导而光学耦合到光波导，将活性半导体材料电泵送到注入引导通过有源半导体材料并通过光学模式的电流，并响应于注入的电流产生有源半导体材料中的光。公开和要求保护其他实施例。

64. 发明授权

US08278741B2 Sidewall photodetector 有权
标题翻译：侧壁光电探测器
公开(公告)号：US08278741B2
公开(公告)日：2012-10-02
申请号：US12495665
申请日：2009-06-30
申请人： Michael T. Morse , Mario J. Paniccia , Olufemi I. Dosunmu
发明人： Michael T. Morse , Mario J. Paniccia , Olufemi I. Dosunmu
IPC分类号： H01L31/105
CPC分类号： G02B6/12004 , G02B6/12007 , G02B6/124 , G02B6/132 , G02B6/4202 , G02B6/4215 , G02B2006/12061 , G02B2006/12123 , H01L31/035272 , H01L31/105
摘要： Sidewall photodetectors for integrated photonic devices and their method of manufacture. An embodiment includes a p-i-n film stack formed on a sidewall of a substrate semiconductor feature having sufficiently large area to accommodate the spot size of a multi-mode fiber. An embodiment includes a first sidewall photodetector coupled to a second sidewall photodetector by a waveguide, the first sidewall photodetector having an i-layer tuned to absorb a first wavelength of light incident to the first sidewall and pass a second wavelength of light to the second sidewall photodetector having an i-layer tuned to absorb the second wavelength.
摘要翻译：集成光子器件的侧壁光电探测器及其制造方法。实施例包括形成在具有足够大的面积以容纳多模光纤的光点尺寸的衬底半导体特征的侧壁上的p-i-n膜堆叠。一个实施例包括通过波导耦合到第二侧壁光电检测器的第一侧壁光电检测器，第一侧壁光电检测器具有被调谐以吸收入射到第一侧壁的第一波长的光并将第二波长的光传递到第二侧壁的i层具有被调谐以吸收第二波长的i层的光电检测器。

65. 发明申请

US20100327381A1 SIDEWALL PHOTODETECTOR 有权
标题翻译：平面电视摄影机
公开(公告)号：US20100327381A1
公开(公告)日：2010-12-30
申请号：US12495665
申请日：2009-06-30
申请人： Michael T. Morse , Mario J. Paniccia , Olufemi I. Dosunmu
发明人： Michael T. Morse , Mario J. Paniccia , Olufemi I. Dosunmu
IPC分类号： H01L31/105 , H01L31/18 , H01L31/0232
CPC分类号： G02B6/12004 , G02B6/12007 , G02B6/124 , G02B6/132 , G02B6/4202 , G02B6/4215 , G02B2006/12061 , G02B2006/12123 , H01L31/035272 , H01L31/105
摘要： Sidewall photodetectors for integrated photonic devices and their method of manufacture. An embodiment includes a p-i-n film stack formed on a sidewall of a substrate semiconductor feature having sufficiently large area to accommodate the spot size of a multi-mode fiber. An embodiment includes a first sidewall photodetector coupled to a second sidewall photodetector by a waveguide, the first sidewall photodetector having an i-layer tuned to absorb a first wavelength of light incident to the first sidewall and pass a second wavelength of light to the second sidewall photodetector having an i-layer tuned to absorb the second wavelength.
摘要翻译：集成光子器件的侧壁光电探测器及其制造方法。实施例包括形成在具有足够大的面积以容纳多模光纤的光点尺寸的衬底半导体特征的侧壁上的p-i-n膜堆叠。一个实施例包括通过波导耦合到第二侧壁光电检测器的第一侧壁光电检测器，第一侧壁光电检测器具有被调谐以吸收入射到第一侧壁的第一波长的光并将第二波长的光传递到第二侧壁的i层具有被调谐以吸收第二波长的i层的光电检测器。

66. 发明授权

US07437026B2 Three dimensional semiconductor based optical switching device 有权
标题翻译：基于三维半导体的光开关器件
公开(公告)号：US07437026B2
公开(公告)日：2008-10-14
申请号：US10947633
申请日：2004-09-22
申请人： Remus Nicolaescu , Mario J. Paniccia
发明人： Remus Nicolaescu , Mario J. Paniccia
IPC分类号： G02F1/295
CPC分类号： G02F1/025
摘要： A device with optical switching between multiple layers of a semiconductor die is disclosed. In one aspect of the present invention, the disclosed apparatus includes a first semiconductor material layer of a semiconductor die. The first semiconductor material layer has a first optical waveguide. A second semiconductor material layer is also included in the semiconductor die. The second semiconductor material layer has a second optical waveguide. An insulating layer is disposed between the first and second semiconductor material layers such that there is an evanescent coupling between the first and second semiconductor material layers. There are modulated charge layers proximate to the insulating layer such that a coupling length of the evanescent coupling is controlled in response to the modulated charge layers.
摘要翻译：公开了一种在半导体管芯的多层之间进行光切换的器件。在本发明的一个方面，所公开的装置包括半导体管芯的第一半导体材料层。第一半导体材料层具有第一光波导。第二半导体材料层也包括在半导体管芯中。第二半导体材料层具有第二光波导。绝缘层设置在第一和第二半导体材料层之间，使得在第一和第二半导体材料层之间存在ev逝耦合。存在靠近绝缘层的调制电荷层，使得响应于调制的电荷层来控制ev逝耦合的耦合长度。

67. 发明授权

US07257283B1 Transmitter-receiver with integrated modulator array and hybrid bonded multi-wavelength laser array 有权
标题翻译：具有集成调制器阵列和混合键合多波长激光器阵列的发射器 - 接收器
公开(公告)号：US07257283B1
公开(公告)日：2007-08-14
申请号：US11480610
申请日：2006-06-30
申请人： Ansheng Liu , Mario J. Paniccia , Richard Jones
发明人： Ansheng Liu , Mario J. Paniccia , Richard Jones
IPC分类号： G02B6/12 , G02B6/28
CPC分类号： G02B6/12019 , G02B6/12004 , G02F1/2257 , H01S5/021 , H01S5/02248 , H01S5/1032 , H01S5/141 , H01S5/4087
摘要： An apparatus and method providing a plurality of modulated optical beams from a single layer of semiconductor material. For one example, an apparatus includes a plurality of optical waveguides disposed in a single layer of semiconductor material. Each one of the plurality of optical waveguides includes an optical cavity defined along the optical waveguide. A single bar of gain medium material adjoining the single layer of semiconductor material across the plurality of optical waveguides is included. The gain medium-semiconductor material interface is defined along each of the plurality of optical waveguides. A plurality of optical modulators is disposed in the single layer of semiconductor material. Each one of the plurality of optical modulators is optically coupled to a respective one of the plurality of optical waveguides to modulate a respective optical beam directed from the optical cavity.
摘要翻译：一种从单层半导体材料提供多个调制光束的装置和方法。作为一个示例，设备包括设置在单层半导体材料中的多个光波导。多个光波导中的每一个包括沿着光波导限定的光学腔。包括与多个光波导相邻的单层半导体材料的单条增益介质材料。沿着多个光波导中的每一个限定增益介质半导体材料界面。多个光学调制器设置在单层半导体材料中。多个光学调制器中的每一个光学耦合到多个光波导中的相应的一个光波导，以调制从光腔指向的相应光束。

68. 发明授权

US07146068B2 Polarization insensitive method and apparatus for switching and modulating an optical beam 有权
公开(公告)号：US07146068B2
公开(公告)日：2006-12-05
申请号：US11293717
申请日：2005-12-01
申请人： Remus Nicolaescu , Mario J. Paniccia
发明人： Remus Nicolaescu , Mario J. Paniccia
IPC分类号： G02B6/26
CPC分类号： G02B6/126 , G02B6/272 , G02B6/2793 , G02B6/29352 , G02F1/011 , G02F1/0136 , G02F1/025 , G02F1/3133 , G02F2001/0144 , G02F2203/06
摘要： A polarization beam splitter and combiner and a polarization insensitive modulating and switching method and apparatus. In one aspect of the present invention, the disclosed apparatus a first optical waveguide disposed in a semiconductor material layer. A second optical waveguide is also disposed in the semiconductor material layer. An insulating region is disposed between the first and second optical waveguides to provide a coupling region in the semiconductor material layer between the first and second optical waveguides. The coupling region has a first coupling length for a first polarization mode of an optical beam directed through one of the first and second optical waveguides into the coupling region. The coupling region has a second coupling length for a second polarization mode of the optical beam.

69. 发明授权

US07142761B2 Method and apparatus for isolating an active region in an optical waveguide 有权
标题翻译：用于隔离光波导中的有源区的方法和装置
公开(公告)号：US07142761B2
公开(公告)日：2006-11-28
申请号：US10731559
申请日：2003-12-09
申请人： Ansheng Liu , Mario J. Paniccia
发明人： Ansheng Liu , Mario J. Paniccia
IPC分类号： G02B6/10
CPC分类号： G02F1/025 , G02F2201/063
摘要： An apparatus and method for modulating a phase of optical beam in an electrically isolated active region of an optical waveguide. In one embodiment, an apparatus according to embodiments of the present invention includes an active region of an optical waveguide disposed in a semiconductor layer. The active region includes a p doped region and an n doped region. The apparatus further includes an insulating region disposed in the semiconductor layer surrounding the active region in the semiconductor layer. The insulating region electrically isolates the active region of the optical waveguide from a passive region of the optical waveguide disposed in the semiconductor layer. An optical beam is to be directed through the optical waveguide and through the active region to be phase shifted in response to a modulated charge region in the active region in the optical waveguide.
摘要翻译：一种用于调制光波导的电隔离有源区中的光束相位的装置和方法。在一个实施例中，根据本发明的实施例的装置包括设置在半导体层中的光波导的有源区。有源区包括p掺杂区和n掺杂区。该装置还包括设置在半导体层中的绝缘区域，该半导体层围绕半导体层中的有源区域。绝缘区域将光波导的有源区域与设置在半导体层中的光波导的无源区域电隔离。光束将被引导通过光波导并且通过有源区域响应于光波导中的有源区域中的调制的电荷区域被相移。

70. 发明授权

US07088877B2 Method and apparatus for tuning a bragg grating in a semiconductor substrate 有权
公开(公告)号：US07088877B2
公开(公告)日：2006-08-08
申请号：US09881218
申请日：2001-06-13
申请人： Ansheng Liu , Mario J. Paniccia , Remus Nicolaescu
发明人： Ansheng Liu , Mario J. Paniccia , Remus Nicolaescu
IPC分类号： G02F1/295
CPC分类号： G02F1/025 , G02B6/124 , G02B2006/12097 , G02B2006/12135 , G02F1/0147 , G02F2201/307
摘要： A tunable Bragg grating method and apparatus. In one aspect of the present invention, a method according to an embodiment of the present invention includes directing an optical beam into a first end of an optical path having the first end and a second end disposed in a semiconductor substrate, reflecting a first portion of the optical beam having a first center wavelength back out from the first end of the optical path and tuning the optical path to reflect a second portion of the optical beam having a second center wavelength back out from the first end of the optical path. In one embodiment, the Bragg grating is tuned with a heater used to adjust a temperature of the semiconductor substrate. In another embodiment, charge in charge modulated regions along the optical path is modulated to tune the Bragg grating.

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