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61. 发明授权

US07889629B2 High density data storage medium 失效
标题翻译：高密度数据存储介质
公开(公告)号：US07889629B2
公开(公告)日：2011-02-15
申请号：US12275547
申请日：2008-11-21
申请人： Jane Frommer , Robert D. Miller , Craig Hawker , Urs T. Duerig , Bernd Gotsmann , Peter Vettiger , Mark A. Lantz
发明人： Jane Frommer , Robert D. Miller , Craig Hawker , Urs T. Duerig , Bernd Gotsmann , Peter Vettiger , Mark A. Lantz
IPC分类号： G11B9/00
CPC分类号： G11B9/14 , B82Y10/00 , G11B9/1409 , G11B9/1472 , G11B9/149
摘要： A data storage system includes a read/write head having a tip connected to a resistive path locally exerting heat at the tip when an electrical current is applied; and a data storage medium from which information is reproduced by scanning a surface of the medium with a tip positioned in contact therewith, the medium comprising: a substrate; and a polymer recording surface within which data bit values are determined by the topographical state at the bit location, characterized in that the polymer contains thermally reversible crosslinkages.
摘要翻译：数据存储系统包括读/写头，其具有连接到电阻路径的尖端，当施加电流时局部地在顶端施加热量; 以及数据存储介质，其中通过用与其接触的尖端扫描介质的表面来再现信息，所述介质包括：基板; 以及聚合物记录表面，其中数据位值由比特位置处的形貌状态确定，其特征在于，所述聚合物含有热可逆交联。

62. 发明授权

US07862858B2 Scanning probe-based lithography method 有权
标题翻译：扫描探针型光刻法
公开(公告)号：US07862858B2
公开(公告)日：2011-01-04
申请号：US12336904
申请日：2008-12-17
申请人： Michel Despont , Urs T. Duerig , Jane E. Frommer , Bernd W. Gotsmann , James L. Hedrick , Craig Jon Hawker , Robert D. Miller
发明人： Michel Despont , Urs T. Duerig , Jane E. Frommer , Bernd W. Gotsmann , James L. Hedrick , Craig Jon Hawker , Robert D. Miller
IPC分类号： B05D3/06
CPC分类号： G03F7/0002 , G01Q80/00 , Y10S977/849 , Y10S977/85 , Y10S977/851 , Y10S977/855 , Y10S977/857
摘要： A resist medium in which features are lithographically produced by scanning a surface of the medium with an AFM probe positioned in contact therewith. The resist medium comprises a substrate; and a polymer resist layer within which features are produced by mechanical action of the probe. The polymer contains thermally reversible crosslinkages. Also disclosed are methods that generally includes scanning a surface of the polymer resist layer with an AFM probe positioned in contact with the resist layer, wherein heating the probe and a squashing-type mechanical action of the probe produces features in the layer by thermally reversing the crosslinkages.
摘要翻译：抗蚀剂介质，其特征是通过用与其接触的AFM探针扫描介质的表面来光刻制造。抗蚀剂介质包括基底; 以及聚合物抗蚀剂层，其中通过探针的机械作用产生特征。聚合物含有热可逆交联。还公开了通常包括用定位成与抗蚀剂层接触的AFM探针扫描聚合物抗蚀剂层的表面的方法，其中加热探针和探针的挤压型机械作用通过热反转来产生该层中的特征交联。

63. 发明申请

US20100070069A1 MICROPLATE HANDLING SYSTEMS AND RELATED COMPUTER PROGRAM PRODUCTS AND METHODS 失效
标题翻译：微处理器系统及相关计算机程序产品及方法
公开(公告)号：US20100070069A1
公开(公告)日：2010-03-18
申请号：US12561129
申请日：2009-09-16
申请人： Steven A. Hofstadler , Jared J. Drader , Jose R. Gutierrez , Paul J. Gleason , Rex O. Bare , Robert D. Miller , Jeffrey C. Smith , Kevin S. Oberkramer , Ronald K. Bergold
发明人： Steven A. Hofstadler , Jared J. Drader , Jose R. Gutierrez , Paul J. Gleason , Rex O. Bare , Robert D. Miller , Jeffrey C. Smith , Kevin S. Oberkramer , Ronald K. Bergold
IPC分类号： H01L21/677 , H01L21/68 , A47F7/00 , G06K7/00
CPC分类号： G01N35/028 , G01N35/0095 , G01N2035/0425
摘要： Systems, computer program products, and methods useful for handling or managing microplates are provided.
摘要翻译：提供了用于处理或管理微孔板的系统，计算机程序产品和方法。

64. 发明申请

US20090170342A1 DIELECTRIC NANOSTRUCTURE AND METHOD FOR ITS MANUFACTURE 失效
标题翻译：电介质纳米结构及其制造方法
公开(公告)号：US20090170342A1
公开(公告)日：2009-07-02
申请号：US11499132
申请日：2006-08-03
申请人： Ho-Cheol Kim , Robert D. Miller
发明人： Ho-Cheol Kim , Robert D. Miller
IPC分类号： H01L21/47 , H01L23/58
CPC分类号： H01L21/02118 , H01L21/02126 , H01L21/02167 , H01L21/0217 , H01L21/312 , H01L21/3121 , H01L21/3122 , H01L21/3124 , H01L21/3125 , H01L21/7682 , H01L23/5222 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/09701 , Y10S977/70 , H01L2924/00
摘要： The present invention relates to dielectric nanostructures useful in semiconductor devices and other electronic devices and methods for manufacturing the dielectric nanostructures. The nanostructures generally comprises an array of isolated pillars positioned on a substrate. The methods of the present invention involve using semiconductor technology to manufacture the nanostructures from a mixture of a crosslinkable dielectric material and an amphiphilic block copolymer.
摘要翻译：本发明涉及可用于半导体器件和其它电子器件的电介质纳米结构以及用于制造电介质纳米结构的方法。纳米结构通常包括位于基底上的分离柱的阵列。本发明的方法涉及使用半导体技术从可交联介电材料和两亲性嵌段共聚物的混合物制造纳米结构。

65. 发明申请

US20090100553A1 SCANNING PROBE-BASED LITHOGRAPHY METHOD 有权
标题翻译：基于扫描探针的LITHOGRAPHY方法
公开(公告)号：US20090100553A1
公开(公告)日：2009-04-16
申请号：US12336904
申请日：2008-12-17
申请人： Michel Despont , Urs T. Duerig , Jane E. Frommer , Bernd W. Gotsmann , James L. Hedrick , Craig Jon Hawker , Robert D. Miller
发明人： Michel Despont , Urs T. Duerig , Jane E. Frommer , Bernd W. Gotsmann , James L. Hedrick , Craig Jon Hawker , Robert D. Miller
IPC分类号： G12B21/00
CPC分类号： G03F7/0002 , G01Q80/00 , Y10S977/849 , Y10S977/85 , Y10S977/851 , Y10S977/855 , Y10S977/857
摘要： A resist medium in which features are lithographically produced by scanning a surface of the medium with an AFM probe positioned in contact therewith. The resist medium comprises a substrate; and a polymer resist layer within which features are produced by mechanical action of the probe. The polymer contains thermally reversible crosslinkages. Also disclosed are methods that generally includes scanning a surface of the polymer resist layer with an AFM probe positioned in contact with the resist layer, wherein heating the probe and a squashing-type mechanical action of the probe produces features in the layer by thermally reversing the crosslinkages.
摘要翻译：抗蚀剂介质，其特征是通过用与其接触的AFM探针扫描介质的表面来光刻制造。抗蚀剂介质包括基底; 以及通过探针的机械作用产生特征的聚合物抗蚀剂层。聚合物含有热可逆交联。还公开了通常包括用定位成与抗蚀剂层接触的AFM探针扫描聚合物抗蚀剂层的表面的方法，其中加热探针和探针的挤压型机械作用通过热反转来产生该层中的特征交联。

66. 发明申请

US20090075472A1 METHODS TO MITIGATE PLASMA DAMAGE IN ORGANOSILICATE DIELECTRICS 失效
标题翻译：减轻有机电介质中等离子体损伤的方法
公开(公告)号：US20090075472A1
公开(公告)日：2009-03-19
申请号：US11857760
申请日：2007-09-19
申请人： John C. Arnold , Griselda Bonilla , William J. Cote , Geraud Dubois , Daniel C. Edelstein , Alfred Grill , Elbert Huang , Robert D. Miller , Satya V. Nitta , Sampath Purushothaman , E. Todd Ryan , Muthumanickam Sankarapandian , Terry A. Spooner , Willi Volksen
发明人： John C. Arnold , Griselda Bonilla , William J. Cote , Geraud Dubois , Daniel C. Edelstein , Alfred Grill , Elbert Huang , Robert D. Miller , Satya V. Nitta , Sampath Purushothaman , E. Todd Ryan , Muthumanickam Sankarapandian , Terry A. Spooner , Willi Volksen
IPC分类号： H01L21/4763
CPC分类号： H01L21/76808 , H01L21/02063 , H01L21/02126 , H01L21/02203 , H01L21/02274 , H01L21/02304 , H01L21/02348 , H01L21/02362 , H01L21/31138 , H01L21/31144 , H01L21/31633 , H01L21/76814 , H01L21/76826 , H01L21/76831
摘要： Methods of minimizing or eliminating plasma damage to low k and ultra low k organosilicate intermetal dielectric layers are provided. The reduction of the plasma damage is effected by interrupting the etch and strip process flow at a suitable point to add an inventive treatment which protects the intermetal dielectric layer from plasma damage during the plasma strip process. Reduction or elimination of a plasma damaged region in this manner also enables reduction of the line bias between a line pattern in a photoresist and a metal line formed therefrom, and changes in the line width of the line trench due to a wet clean after the reactive ion etch employed for formation of the line trench and a via cavity. The reduced line bias has a beneficial effect on electrical yields of a metal interconnect structure.
摘要翻译：提供了最小化或消除对低k和超低k有机硅酸盐金属间电介质层的等离子体损伤的方法。等离子体损伤的降低通过在合适的点处中断蚀刻和剥离工艺流程来实现，以增加本发明的处理，其保护金属间电介质层免受等离子体条带处理期间的等离子体损伤。以这种方式减少或消除等离子体损伤区域还能够减少光致抗蚀剂中的线图案和由其形成的金属线之间的线偏压，并且由于在反应性之后的湿清洁而改变线沟槽的线宽用于形成线沟槽和通孔腔的离子蚀刻。减少的线偏压对金属互连结构的电产量具有有益的影响。

67. 发明授权

US07491425B2 Scanning probe-based lithography method 失效
标题翻译：扫描探针型光刻法
公开(公告)号：US07491425B2
公开(公告)日：2009-02-17
申请号：US10978028
申请日：2004-10-29
申请人： Michel Despont , Urs T. Duerig , Jane E. Frommer , Bernd W. Gotsmann , James L. Hedrick , Craig Jon Hawker , Robert D. Miller
发明人： Michel Despont , Urs T. Duerig , Jane E. Frommer , Bernd W. Gotsmann , James L. Hedrick , Craig Jon Hawker , Robert D. Miller
IPC分类号： B05D3/06
CPC分类号： G03F7/0002 , G01Q80/00 , Y10S977/849 , Y10S977/85 , Y10S977/851 , Y10S977/855 , Y10S977/857
摘要： A resist medium in which features are lithographically produced by scanning a surface of the medium with an AFM probe positioned in contact therewith. The resist medium comprises a substrate; and a polymer resist layer within which features are produced by mechanical action of the probe. The polymer contains thermally reversible crosslinkages. Also disclosed is a method that generally includes scanning a surface of the polymer resist layer with an AFM probe positioned in contact with the resist layer, wherein heating the probe and a squashing-type mechanical action of the probe produces features in the layer by thermally reversing the crosslinkages.
摘要翻译：抗蚀剂介质，其特征是通过用与其接触的AFM探针扫描介质的表面来光刻制造。抗蚀剂介质包括基底; 以及聚合物抗蚀剂层，其中通过探针的机械作用产生特征。聚合物含有热可逆交联。还公开了一种方法，其通常包括用与抗蚀剂层接触的AFM探针扫描聚合物抗蚀剂层的表面，其中加热探针和探针的挤压型机械作用通过热反转在层中产生特征交联。

68. 发明申请

US20070296064A1 Electronic structures utilizing etch resistant boron and phosphorus materials and methods to form same 审中-公开
标题翻译：采用耐蚀刻硼和磷材料的电子结构及其形成方法
公开(公告)号：US20070296064A1
公开(公告)日：2007-12-27
申请号：US11472726
申请日：2006-06-22
申请人： Stephen M. Gates , Robert D. Miller
发明人： Stephen M. Gates , Robert D. Miller
IPC分类号： H01L23/52 , H01L21/469 , C01B35/00 , C01B25/00
CPC分类号： H01L21/02112 , H01L21/02205 , H01L21/31116 , H01L21/31144 , H01L21/31604 , H01L21/318 , H01L21/3212 , H01L21/76807 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L21/76835 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A dense boron-based or phosphorus-based dielectric material is provided. Specifically, the present invention provides a dense boron-based dielectric material comprised of boron and at least one of carbon, nitrogen, and hydrogen or a dense phosphorus-based dielectric comprised of phosphorus and nitrogen. The present invention also provides electronic structures containing the dense boron-based or phosphorus-based dielectric as an etch stop, a dielectric Cu capping material, a CMP stop layer, and/or a reactive ion etching mask in a ULSI back-end-of-the-line (BEOL) interconnect structure. A method of forming the inventive boron-based or phosphorus-based dielectric as well as the electronic structure containing the same are also described in the present invention.
摘要翻译：提供了一种致密的硼基或磷基介电材料。具体地说，本发明提供由硼和碳，氮和氢中的至少一种构成的致密的硼基介电材料或由磷和氮组成的致密的磷基电介质。本发明还提供了电子结构，其包含致密的硼基或磷基电介质作为蚀刻停止层，电介质铜封盖材料，CMP停止层和/或ULSI后端的反应离子蚀刻掩模（BEOL）互连结构。在本发明中还描述了形成本发明的硼基或磷基电介质的方法以及含有它们的电子结构。

69. 发明授权

US06295106B1 Energy-efficient full-color liquid crystal display 失效
标题翻译：节能全彩液晶显示屏
公开(公告)号：US06295106B1
公开(公告)日：2001-09-25
申请号：US09482151
申请日：2000-01-12
申请人： Tadashi Fukuzawa , Sayuri Kohara , Victor Yee Way Lee , Robert D. Miller , John Campbell Scott , Sally A. Swanson
发明人： Tadashi Fukuzawa , Sayuri Kohara , Victor Yee Way Lee , Robert D. Miller , John Campbell Scott , Sally A. Swanson
IPC分类号： G02F11335
CPC分类号： G02F1/133617 , C09B69/101 , C09B69/102 , G02F1/133603 , G02F1/13362 , G02F1/133621 , G02F2001/133614
摘要： Novel liquid crystal display (LCD) structures for full-color liquid crystal displays using photoluminescent (PL) fibers. The new architectures simplify the LCD fabrication process by replacing complicated, time consuming photolithography steps for color filter fabrication to a low-cost, high-throughput fiber spinning technology. The new LCD architecture implementing the approach has a higher power efficiency than conventional LCDs. Three structures of LCD devices utilizing photoluminescent (PL) fiber arrays includes: a first structure having PL fiber arrays situated behind the LC shutter (relative to viewers); a second structure having PL fiber arrays situated on top of the LC shutter; and a third structure where the PL fiber arrays are located outside the LC cell. In one of these structures, the fibers not only photoluminesce, but also polarize incident light thus reducing LCD fabrication cost.
摘要翻译：使用光致发光（PL）光纤的全色液晶显示器的新型液晶显示器（LCD）结构。新架构简化了LCD制造工艺，将复杂，耗时的彩色滤光片制作步骤替代为低成本，高通量的纤维纺丝技术。实现该方法的新型LCD架构具有比传统LCD更高的功率效率。利用光致发光（PL）光纤阵列的三种LCD装置结构包括：具有位于LC快门（相对于观看者）后面的PL光纤阵列的第一结构; 具有位于所述LC快门顶部的PL光纤阵列的第二结构; 以及其中PL光纤阵列位于LC单元外部的第三结构。在这些结构之一中，光纤不仅光致发光，而且使入射光偏振，从而降低LCD制造成本。

70. 发明授权

US6122100A Headgear apparatus for viewing in a periscopic direction and a forward direction simultaneously 失效
标题翻译：用于在偏光方向和向前方向上同时观察的头带装置
公开(公告)号：US6122100A
公开(公告)日：2000-09-19
申请号：US196936
申请日：1998-11-20
申请人： Robert D. Miller
发明人： Robert D. Miller
IPC分类号： G02B23/08
CPC分类号： G02B23/08
摘要： Headgear apparatus allows a viewer to see objects in a periscopic direction and a normal direction simultaneously. A periscope is mounted to a headpiece that is easily supported by the viewers head. The periscope has movable mirrors and an extending periscope section to allow the viewer to change the angle of the periscopic view relative to a plane containing a normal line of sight and the peripheral distance of the periscopic view, respectively. The apparatus further has a sectional periscope, whereby sections containing the reflective elements of the periscope can be rotated relative to each other and change the periscopic view in the plane of the forward line of sight. The head gear apparatus is adapted to a mask or an underwater mask that allows a viewer to see objects in a periscopic direction and a forward direction in diverse environments such as under water.
摘要翻译：头饰设备允许观看者同时观看偏光方向和法线方向的物体。潜望镜安装在容易被观察者头部支撑的头饰上。潜望镜具有可移动镜和延伸的潜望镜部分，以允许观看者相对于包含法线视线的平面和透视视图的周边距离改变透视图的角度。该装置还具有截面潜望镜，由此包含潜望镜的反射元件的部分可以相对于彼此旋转并改变在前视线的平面中的透视图。头盔装置适用于允许观察者在诸如水下的各种环境中观察物体在偏光方向和向前方向上的掩模或水下掩模。

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