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61. 发明申请

US20080023693A1 Methods, devices and compositions for depositing and orienting nanostructures 有权
标题翻译：用于沉积和取向纳米结构的方法，装置和组合物
公开(公告)号：US20080023693A1
公开(公告)日：2008-01-31
申请号：US11226027
申请日：2005-09-14
申请人： Robert S. Dubrow , Linda T. Romano , David P. Stumbo
发明人： Robert S. Dubrow , Linda T. Romano , David P. Stumbo
IPC分类号： H01L29/06 , H01L51/40
CPC分类号： H01L21/02422 , B82Y10/00 , B82Y20/00 , B82Y30/00 , C30B7/00 , H01L21/02381 , H01L21/02521 , H01L21/02603 , H01L21/02656 , Y10S977/762 , Y10S977/827
摘要： Methods and systems for depositing nanomaterials onto a receiving substrate and optionally for depositing those materials in a desired orientation, that comprise providing nanomaterials on a transfer substrate and contacting the nanomaterials with an adherent material disposed upon a surface or portions of a surface of a receiving substrate. Orientation is optionally provided by moving the transfer and receiving substrates relative to each other during the transfer process.
摘要翻译：用于将纳米材料沉积到接收衬底上并且任选地用于以期望取向沉积那些材料的方法和系统，其包括在转移衬底上提供纳米材料并使纳米材料与设置在接收衬底的表面或表面的部分上的粘附材料接触。可选地通过在传送过程中相对于彼此移动传送和接收基板来提供取向。

62. 发明授权

US07284324B2 Method of making photolithographically-patterned out-of-plane coil structures 有权
标题翻译：制造光刻图案的平面外线圈结构的方法
公开(公告)号：US07284324B2
公开(公告)日：2007-10-23
申请号：US11197675
申请日：2005-08-04
申请人： Christopher L. Chua , Francesco Lemmi , Koenraad F. Van Schuylenbergh , Jeng Ping Lu , David K. Fork , Eric Peeters , Decai Sun , Donald L. Smith , Linda T. Romano
发明人： Christopher L. Chua , Francesco Lemmi , Koenraad F. Van Schuylenbergh , Jeng Ping Lu , David K. Fork , Eric Peeters , Decai Sun , Donald L. Smith , Linda T. Romano
IPC分类号： H01R43/16
CPC分类号： H01L24/13 , G01R1/06727 , G01R3/00 , H01F17/0033 , H01F17/02 , H01F41/041 , H01L21/76838 , H01L21/7688 , H01L23/498 , H01L23/49811 , H01L23/5227 , H01L24/11 , H01L24/16 , H01L24/48 , H01L28/10 , H01L2224/05568 , H01L2224/05573 , H01L2224/05624 , H01L2224/13099 , H01L2224/4847 , H01L2224/8592 , H01L2924/0001 , H01L2924/00014 , H01L2924/00015 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01033 , H01L2924/01039 , H01L2924/0104 , H01L2924/01042 , H01L2924/01047 , H01L2924/01057 , H01L2924/01058 , H01L2924/01061 , H01L2924/01068 , H01L2924/01072 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01084 , H01L2924/014 , H01L2924/10253 , H01L2924/10329 , H01L2924/12034 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , Y10T29/4902 , Y10T29/49071 , Y10T29/49147 , Y10T29/49204 , Y10T29/49208 , Y10T29/4921 , Y10T29/49218 , H01L2924/00 , H01L2224/05599 , H01L2224/85399 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： An out-of-plane micro-structure which can be used for on-chip integration of high-Q inductors and transformers places the magnetic field direction parallel to the substrate plane without requiring high aspect ratio processing. The photolithographically patterned coil structure includes an elastic member having an intrinsic stress profile. The intrinsic stress profile biases a free portion away from the substrate forming a loop winding. An anchor portion remains fixed to the substrate. The free portion end becomes a second anchor portion which may be connected to the substrate via soldering or plating. A series of individual coil structures can be joined via their anchor portions to form inductors and transformers.
摘要翻译：可以用于高Q电感和变压器的片上集成的平面外微结构使得磁场方向平行于衬底平面而不需要高纵横比处理。光刻图案的线圈结构包括具有固有应力分布的弹性构件。固有的应力分布使形成环绕的基板远离基板偏移。锚固部分保持固定到基底上。自由部分端部成为可以通过焊接或电镀而连接到基板的第二锚固部分。一系列单独的线圈结构可以通过它们的锚定部分接合以形成电感器和变压器。

63. 发明授权

US07273732B2 Systems and methods for nanowire growth and harvesting 有权
标题翻译：纳米线生长和收获的系统和方法
公开(公告)号：US07273732B2
公开(公告)日：2007-09-25
申请号：US11490636
申请日：2006-07-21
申请人： Yaoling Pan , Xiangfeng Duan , Robert S. Dubrow , Jay L. Goldman , Shahriar Mostarshed , Chunming Niu , Linda T. Romano , Dave Stumbo
发明人： Yaoling Pan , Xiangfeng Duan , Robert S. Dubrow , Jay L. Goldman , Shahriar Mostarshed , Chunming Niu , Linda T. Romano , Dave Stumbo
IPC分类号： H01L51/40
CPC分类号： H01L29/0673 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B32/18 , C30B11/12 , C30B25/00 , C30B29/06 , C30B29/60 , C30B29/605 , H01L21/0237 , H01L21/02381 , H01L21/02422 , H01L21/02521 , H01L21/02573 , H01L21/02603 , H01L21/0262 , H01L21/02645 , H01L21/02653 , H01L29/0665 , H01L29/66477 , H01L29/78 , H01L29/7854 , H01L2924/0002 , Y10S438/962 , Y10S977/742 , Y10S977/743 , Y10S977/843 , Y10S977/891 , H01L2924/00
摘要： The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.
摘要翻译：本发明涉及用于纳米线生长和收获的系统和方法。在一个实施方案中，提供了纳米线生长和掺杂的方法，包括使用硅前体的组合的用于外延取向的纳米线生长的方法。在本发明的另一方面，提供了通过使用牺牲生长层来提高纳米线质量的方法。在本发明的另一方面，提供了将纳米线从一个衬底转移到另一个衬底的方法。

64. 发明授权

US07135728B2 Large-area nanoenabled macroelectronic substrates and uses therefor 有权
公开(公告)号：US07135728B2
公开(公告)日：2006-11-14
申请号：US11106340
申请日：2005-04-13
申请人： Xiangfeng Duan , Chunming Niu , Stephen A. Empedocles , Linda T. Romano , Jian Chen , Vijendra Sahi , Lawrence A. Bock , David P. Stumbo , Parce J. Wallace , Jay L. Goldman
发明人： Xiangfeng Duan , Chunming Niu , Stephen A. Empedocles , Linda T. Romano , Jian Chen , Vijendra Sahi , Lawrence A. Bock , David P. Stumbo , Parce J. Wallace , Jay L. Goldman
IPC分类号： H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L29/0665 , B82Y10/00 , H01F1/405 , H01L27/092 , H01L27/12 , H01L27/1292 , H01L29/0673 , H01L29/068 , H01L29/78696 , H01L31/035281 , H01L33/18 , H01L33/20 , H01L33/24 , H01L51/0048 , H01L51/0504 , H01L51/0545 , H01L51/0595 , Y10S977/742 , Y10S977/762 , Y10S977/781 , Y10S977/789 , Y10S977/938
摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

65. 发明授权

US06579735B1 Method for fabricating GaN field emitter arrays 有权
标题翻译：制造GaN场发射极阵列的方法
公开(公告)号：US06579735B1
公开(公告)日：2003-06-17
申请号：US09998336
申请日：2001-12-03
申请人： Linda T. Romano , David K. Biegelsen
发明人： Linda T. Romano , David K. Biegelsen
IPC分类号： H01L2100
CPC分类号： H01J1/3042 , H01J9/025
摘要： An improved nanotip structure and method for forming the nanotip structure and a display system using the improved nanotip structure is described. The described nanotip is formed from a semiconductor having a crystalline structure such as gallium nitride. The crystalline structure preferably forms dislocations oriented in the direction of the nanotips. One method of forming the nanotip structure uses the relatively slow etching rates that occur around the dislocations compared to the faster etch rates that occur in other parts of the semiconductor structure. The slower etching around dislocations enables the formation of relatively high aspect ratio nanotips in the dislocation area.
摘要翻译：描述了用于形成纳米尖端结构的改进的纳米尖端结构和方法以及使用改进的纳米尖端结构的显示系统。所描述的纳米尖端由具有诸如氮化镓的晶体结构的半导体形成。晶体结构优选地形成在纳米尖端方向上取向的位错。与在半导体结构的其它部分中发生的更快的蚀刻速率相比，形成纳米尖端结构的一种方法使用在位错周围发生的相对慢的蚀刻速率。在位错周围较慢的蚀刻使得能够在位错区域中形成相对高的纵横比的纳米尖端。

66. 发明授权

US09911896B2 Semiconductor light emitting device growing active layer on textured surface 有权
公开(公告)号：US09911896B2
公开(公告)日：2018-03-06
申请号：US12830885
申请日：2010-07-06
申请人： Sungsoo Yi , Nathan F. Gardner , Michael R. Krames , Linda T. Romano
发明人： Sungsoo Yi , Nathan F. Gardner , Michael R. Krames , Linda T. Romano
IPC分类号： H01L33/02 , H01L33/00 , H01L33/08 , H01L33/12 , H01L33/22
CPC分类号： H01L33/007 , H01L33/08 , H01L33/12 , H01L33/22
摘要： In accordance with embodiments of the invention, at least partial strain relief in a light emitting layer of a III-nitride light emitting device is provided by configuring the surface on which at least one layer of the device grows such that the layer expands laterally and thus at least partially relaxes. This layer is referred to as the strain-relieved layer. In some embodiments, the light emitting layer itself is the strain-relieved layer, meaning that the light emitting layer is grown on a surface that allows the light emitting layer to expand laterally to relieve strain. In some embodiments, a layer grown before the light emitting layer is the strain-relieved layer. In a first group of embodiments, the strain-relieved layer is grown on a textured surface.

67. 发明授权

US08030186B2 Large-area nanoenabled macroelectronic substrates and uses therefor 有权
公开(公告)号：US08030186B2
公开(公告)日：2011-10-04
申请号：US12940789
申请日：2010-11-05
申请人： Linda T. Romano , Jian Chen
发明人： Linda T. Romano , Jian Chen
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L29/78696 , B82Y10/00 , B82Y25/00 , H01F1/0072 , H01L27/1214 , H01L29/0665 , H01L29/0673 , H01L29/068 , H01L33/08 , H01L33/18 , H01L35/26 , H01L35/32 , H01L41/082 , H01L41/18 , H01L41/316 , H01L51/0012 , H01L51/0048 , H01L51/0504 , H01L51/0508 , H01L51/0545 , H01L51/0595 , Y02E10/549
摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

68. 发明授权

US07951422B2 Methods for oriented growth of nanowires on patterned substrates 有权
标题翻译：在图案化衬底上纳米线定向生长的方法
公开(公告)号：US07951422B2
公开(公告)日：2011-05-31
申请号：US11641939
申请日：2006-12-20
申请人： Yaoling Pan , Xiangfeng Duan , Robert S. Dubrow , Jay Goldman , Shahriar Mostarshed , Chunming Niu , Linda T. Romano , David P. Stumbo , Alice Fischer-Colbrie , Vijendra Sahi , Virginia Robbins
发明人： Yaoling Pan , Xiangfeng Duan , Robert S. Dubrow , Jay Goldman , Shahriar Mostarshed , Chunming Niu , Linda T. Romano , David P. Stumbo , Alice Fischer-Colbrie , Vijendra Sahi , Virginia Robbins
IPC分类号： C23C16/00
CPC分类号： C30B29/605 , B82Y30/00 , C30B11/12 , C30B29/06 , Y10T428/24917
摘要： The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors, as well as us of patterned substrates to grow oriented nanowires. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.
摘要翻译：本发明涉及用于纳米线生长和收获的系统和方法。在一个实施例中，提供了用于纳米线生长和掺杂的方法，包括使用硅前体的组合的外延取向纳米线生长的方法，以及我们用于生长取向的纳米线的图案化衬底。在本发明的另一方面，提供了通过使用牺牲生长层来提高纳米线质量的方法。在本发明的另一方面，提供了将纳米线从一个衬底转移到另一个衬底的方法。

69. 发明授权

US07871870B2 Method of fabricating gate configurations for an improved contacts in nanowire based electronic devices 有权
标题翻译：制造基于纳米线的电子器件中改进接触的栅极配置的方法
公开(公告)号：US07871870B2
公开(公告)日：2011-01-18
申请号：US12703043
申请日：2010-02-09
申请人： Shahriar Mostarshed , Jian Chen , Francisco A. Leon , Yaoling Pan , Linda T. Romano
发明人： Shahriar Mostarshed , Jian Chen , Francisco A. Leon , Yaoling Pan , Linda T. Romano
IPC分类号： H01L21/00 , H01L27/108
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/42384 , H01L29/42392 , H01L29/775 , H01L29/785 , H01L29/78645 , H01L29/78681 , H01L29/7869 , Y10S977/762 , Y10S977/932 , Y10S977/938
摘要： Methods, systems, and apparatuses for electronic devices having improved gate structures are described. An electronic device includes at least one nanowire. A gate contact is positioned along at least a portion of a length of the at least one nanowire. A dielectric material layer is between the gate contact and the at least one nanowire. A source contact and a drain contact are in contact with the at least one nanowire. At least a portion of the source contact and/or the drain contact overlaps with the gate contact along the nanowire the length. In another aspect, an electronic device includes a nanowire having a semiconductor core surrounded by an insulating shell layer. A ring shaped first gate region surrounds the nanowire along a portion of the length of the nanowire. A second gate region is positioned along the length of the nanowire between the nanowire and the substrate. A source contact and a drain contact are coupled to the semiconductor core of the nanowire at respective exposed portions of the semiconductor core.
摘要翻译：描述了具有改进的门结构的电子设备的方法，系统和装置。电子装置包括至少一个纳米线。栅极接触沿至少一个纳米线的长度的至少一部分定位。介电材料层在栅极接触和至少一个纳米线之间。源极触点和漏极触点与至少一个纳米线接触。源极触点和/或漏极触点的至少一部分沿着该纳米线的长度与栅极触点重叠。另一方面，一种电子器件包括具有被绝缘壳层包围的半导体芯的纳米线。环形第一栅极区域沿着纳米线长度的一部分包围纳米线。第二栅极区沿着纳米线和衬底之间的纳米线的长度定位。源极触点和漏极触点在半导体芯的相应的暴露部分处耦合到纳米线的半导体芯。

70. 发明授权

US07795125B2 System and process for producing nanowire composites and electronic substrates therefrom 有权
标题翻译：用于生产纳米线复合材料和电子基材的系统和工艺
公开(公告)号：US07795125B2
公开(公告)日：2010-09-14
申请号：US12274904
申请日：2008-11-20
申请人： Mihai A. Buretea , Jian Chen , Calvin Y. H. Chow , Chunming Niu , Yaoling Pan , J. Wallace Parce , Linda T. Romano , David P. Stumbo
发明人： Mihai A. Buretea , Jian Chen , Calvin Y. H. Chow , Chunming Niu , Yaoling Pan , J. Wallace Parce , Linda T. Romano , David P. Stumbo
IPC分类号： H01L21/28 , H01L21/3205
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/42384 , H01L29/66742 , H01L29/78681 , H01L29/78696 , H01L33/06 , H01L33/24 , H01L51/0048 , H01L51/0545 , H01L2924/0002 , Y10T428/2913 , H01L2924/00
摘要： The present invention relates to a system and process for producing a nanowire-material composite. A substrate having nanowires attached to a portion of at least one surface is provided. A material is deposited over the portion to form the nanowire-material composite. The process further optionally includes separating the nanowire-material composite from the substrate to form a freestanding nanowire-material composite. The freestanding nanowire material composite is optionally further processed into a electronic substrate. A variety of electronic substrates can be produced using the methods described herein. For example, a multi-color light-emitting diode can be produced from multiple, stacked layers of nanowire-material composites, each composite layer emitting light at a different wavelength.
摘要翻译：本发明涉及纳米线材料复合体的制造方法和制造方法。提供了具有连接到至少一个表面的一部分的纳米线的衬底。在该部分上沉积材料以形成纳米线材料复合材料。该方法进一步可选地包括从衬底分离纳米线材料复合物以形成独立的纳米线材料复合材料。独立的纳米线材料复合材料任选进一步加工成电子基片。可以使用本文所述的方法来生产各种电子基板。例如，多个发光二极管可以由多个层叠的纳米线材料复合体制成，每个复合层发射不同波长的光。

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