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61. 再颁专利

USRE32893E Nonlinear and bistable optical device 失效
标题翻译：非线性和双稳态光学器件
公开(公告)号：USRE32893E
公开(公告)日：1989-03-21
申请号：US105770
申请日：1987-10-06
申请人： David A. B. Miller
发明人： David A. B. Miller
IPC分类号： G02F1/017 , G02F3/02 , H01L31/0352
CPC分类号： B82Y20/00 , G02F1/017 , G02F1/01716 , G02F3/028 , H01L31/035236 , G02F1/01708
摘要： The invention is a nonlinear or bistable optical device having a low switching energy. The invention uses a means responsive to light for generating a photocurrent, a structure having a semiconductor quantum well region, and means responsive to the photocurrent for electrically controlling an optical absorption of the semiconductor quantum well region. The optical absorption of the semiconductor quantum well region varies in response to variations in the photocurrent. A photodiode or phototransistor may be used as the means responsive to light, and may be made integral with the structure having the semiconductor quantum well region. An array of devices may be fabricated on a single chip for parallel logic processing.

62. 发明授权

US4754132A Symmetric optical device with quantum well absorption 失效
标题翻译：具有量子阱吸收的对称光学器件
公开(公告)号：US4754132A
公开(公告)日：1988-06-28
申请号：US42411
申请日：1987-04-24
申请人： Harvard S. Hinton , Anthony L. Lentine , David A. B. Miller
发明人： Harvard S. Hinton , Anthony L. Lentine , David A. B. Miller
IPC分类号： G02F3/00 , G02F3/02 , G11C7/00 , H01L31/0352 , H01L31/105 , H01J40/14
CPC分类号： B82Y20/00 , G02F3/028 , G11C7/005 , H01L31/035236 , H01L31/105
摘要： An optically bistable device 100 is disclosed having first and second semiconductor multiple quantum well regions 101 and 102 with complementary high and low absorption levels for emitting first and second output light beams 162 and 163 having complementary low and high power levels. The optical device comprises first and second photodetectors 103 and 104 having respective quantum well regions 101 and 102. The photodetectors are responsive to first and second light beams 160 and 161 for electrically controlling the optical absorption of each of the two quantum well regions. The state of the device is determined by the transmission level of light beam 161 passing through multiple quantum well region 102 and being emitted as output light beam 162, whereas the complementary state of the device is determined by the transmission level of complementary output light beam 162. A variable optical attenuator 701 concomitantly and proportionally varies the power level of input light beams 160 and 161 to maintain the state of the device over a wide range of input powers. When operated in the bistable operating region of the device, either one of control light beams 180 and 181 with a low power level changes the device from one state to the other. Two threshold values of the ratio of the power of the light incident on the two photodetectors establishes where the device switches from one state to the other.
摘要翻译：公开了具有用于发射具有互补的低功率和高功率电平的第一和第二输出光束162和163的具有互补的高和低吸收水平的第一和第二半导体多量子阱区域101和102的光学双稳态器件100。光学器件包括具有相应量子阱区域101和102的第一和第二光电探测器103和104.光电探测器响应于第一和第二光束160和161，用于电控制两个量子阱区域中的每一个的光学吸收。器件的状态由通过多个量子阱区域102并作为输出光束162发射的光束161的透射电平确定，而器件的互补状态由互补输出光束162的透射电平可变光衰减器701同时且成比例地改变输入光束160和161的功率电平，以将器件的状态保持在宽范围的输入功率上。当在装置的双稳态工作区域中操作时，具有低功率电平的控制光束180和181中的任一个将装置从一个状态改变到另一个状态。入射到两个光电探测器上的光的功率比的两个阈值确定了器件从一个状态切换到另一个状态。

63. 发明授权

US4749850A High speed quantum well optical detector 失效
标题翻译：高速量子阱光检测器
公开(公告)号：US4749850A
公开(公告)日：1988-06-07
申请号：US043213
申请日：1987-04-27
申请人： Daniel S. Chemla , David A. B. Miller , Stefan N. Schmitt-Rink
发明人： Daniel S. Chemla , David A. B. Miller , Stefan N. Schmitt-Rink
IPC分类号： H01L31/10 , H01L31/0352 , H01L31/105 , H01J40/14
CPC分类号： B82Y20/00 , H01L31/0352 , H01L31/035236 , H01L31/105
摘要： In response to ultrafast optical signal pulses, it is now possible to generate correspondingly ultrafast electrical signal pulses by employing semiconductor apparatus including at least one quantum well layer electrically biased by a static electric field. Optical signal pulses incident on the quantum well are at a wavelength substantially less than the absorption edge of the quantum well layer or layers. In other words, the incident optical pulses have a means photon energy less than the bandgap energy of the quantum well layer or layers. The electrical signal pulse generated subsists for a period of time substantially equal to the duration of the optical signal pulses incident on the quantum well layer or layers.

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