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    • 61. 发明申请
    • DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
    • 显示装置及其制造方法
    • US20110240999A1
    • 2011-10-06
    • US13017362
    • 2011-01-31
    • Chun-Gi You
    • Chun-Gi You
    • H01L27/15H01L21/84
    • H01L27/1288H01L27/1255H01L29/4908
    • A display device and a method of manufacturing the same. In one embodiment, a display device includes a substrate having a pixel region, a transistor region and a capacitor region, a transistor arranged within the transistor region of the substrate and a capacitor arranged within the capacitor region of the substrate, wherein the capacitor includes a lower electrode arranged on the substrate, a gate insulating layer arranged on the lower electrode and an upper electrode arranged on the gate insulating layer and overlapping the lower electrode, the upper electrode includes a first conductive layer and a second conductive layer arranged on the first conductive layer, wherein the first conductive layer is opaque.
    • 一种显示装置及其制造方法。 在一个实施例中,显示装置包括具有像素区域,晶体管区域和电容器区域的衬底,布置在衬底的晶体管区域内的晶体管和布置在衬底的电容器区域内的电容器,其中电容器包括: 布置在基板上的下电极,布置在下电极上的栅极绝缘层和布置在栅绝缘层上并与下电极重叠的上电极,上电极包括布置在第一导电层上的第一导电层和第二导电层 层,其中所述第一导电层是不透明的。
    • 63. 发明授权
    • Display substrate and method of manufacturing the same
    • 显示基板及其制造方法
    • US07999258B2
    • 2011-08-16
    • US12079723
    • 2008-03-27
    • Jae-Bok LeeChun-Gi YouSang-Hyun Jun
    • Jae-Bok LeeChun-Gi YouSang-Hyun Jun
    • H01L21/00
    • G02F1/1368G02F2001/13625
    • A display substrate includes a base substrate, a first metal pattern, a second metal pattern, a first transparent conductive layer and a second transparent conductive layer. The first metal pattern is formed on the base substrate, and includes a gate line and a gate electrode connected to the gate line. The second metal pattern includes a data line crossing the gate line, a source electrode connected to the data line and a drain electrode being spaced apart from the source electrode. The first transparent conductive layer includes a capping layer capping the second metal pattern and a common electrode formed in a pixel area. The second transparent conductive layer includes a pixel electrode having a plurality of openings, contacting the capping layer capping the drain electrode, and facing the common electrode.
    • 显示基板包括基底基板,第一金属图案,第二金属图案,第一透明导电层和第二透明导电层。 第一金属图案形成在基底基板上,并且包括连接到栅极线的栅极线和栅电极。 第二金属图案包括与栅极线交叉的数据线,连接到数据线的源电极和与源电极间隔开的漏电极。 第一透明导电层包括覆盖第二金属图案的覆盖层和形成在像素区域中的公共电极。 所述第二透明导电层包括具有多个开口的像素电极,所述像素电极与覆盖所述漏电极并覆盖所述公共电极的覆盖层接触。
    • 65. 发明申请
    • ORGANIC LIGHT EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME
    • 有机发光显示装置及其制造方法
    • US20110121302A1
    • 2011-05-26
    • US12954544
    • 2010-11-24
    • Yul-Kyu LeeChun-Gi YouSun ParkJong-Hyun ParkJin-Hee Kang
    • Yul-Kyu LeeChun-Gi YouSun ParkJong-Hyun ParkJin-Hee Kang
    • H01L51/50H01L51/40
    • H01L27/3262
    • An organic light emitting display device with a simplified manufacturing process and improved electrical characteristics, along with a method of manufacturing the device, are disclosed. The device includes: a substrate having a display area and a non-display area; a thin film transistor (TFT) in the display area; a wiring portion in the non-display area; an intermediate layer electrically connected to the TFT and including an organic light emitting layer; and a counter electrode on the intermediate layer. The TFT includes an active layer, a gate electrode, and source/drain electrodes electrically connected to the active layer. The source/drain electrodes include a first conductive layer, a second conductive layer, and a third conductive layer that are sequentially stacked. The wiring portion includes the same material as the first conductive layer. One of the source/drain electrodes is longer than the other, to function as a pixel electrode, and is electrically connected to the intermediate layer.
    • 公开了一种具有简化的制造工艺和改进的电气特性的有机发光显示装置,以及制造该装置的方法。 该装置包括:具有显示区域和非显示区域的基板; 在显示区域中的薄膜晶体管(TFT); 非显示区域中的布线部分; 电连接到TFT并包括有机发光层的中间层; 和中间层上的对电极。 TFT包括有源层,栅电极和电连接到有源层的源/漏电极。 源极/漏极包括依次堆叠的第一导电层,第二导电层和第三导电层。 布线部分包括与第一导电层相同的材料。 源/漏电极中的一个比另一个长,用作像素电极,并且电连接到中间层。
    • 67. 发明授权
    • Thin film transistor array panel for a display device and a method of manufacturing the same
    • 用于显示装置的薄膜晶体管阵列面板及其制造方法
    • US07947539B2
    • 2011-05-24
    • US12548834
    • 2009-08-27
    • Chun-Gi You
    • Chun-Gi You
    • H01L21/00
    • H01L27/12H01L27/124H01L29/66765
    • A method of manufacturing a thin film transistor array panel includes forming gate lines including gate electrodes on an insulation substrate; forming a gate insulating layer, semiconductor layer, and etch stop layer on the gate lines; etching and patterning the etch stop and semiconductor layers at the same time using photolithography; ashing and partially removing a photoresist film pattern used in the patterning of the etch stop and semiconductor layers; etching the etch stop layer exposed by removed portions of the photoresist film pattern to form etch stop members; depositing ohmic contact and data metal layers onto the etch stop members, etching the ohmic contact and data metal layers at the same time using photolithography to form data lines having source and drain electrodes, and ohmic contact members below the source and drain electrodes; forming a passivation layer on the data lines and drain electrodes; and forming pixel electrodes on the passivation layer.
    • 制造薄膜晶体管阵列面板的方法包括在绝缘基板上形成包括栅电极的栅极线; 在栅极线上形成栅极绝缘层,半导体层和蚀刻停止层; 使用光刻法同时蚀刻和图案化蚀刻停止层和半导体层; 灰化和部分去除蚀刻停止层和半导体层的图案化中使用的光致抗蚀剂膜图案; 蚀刻由去除的光致抗蚀剂膜图案的部分暴露的蚀刻停止层,以形成蚀刻停止构件; 将欧姆接触和数据金属层沉积到蚀刻停止构件上,同时使用光刻法蚀刻欧姆接触和数据金属层,以在源极和漏极之下形成具有源极和漏极以及欧姆接触构件的数据线; 在数据线和漏电极上形成钝化层; 以及在钝化层上形成像素电极。
    • 69. 发明授权
    • Thin film transistor array panel and method of manufacturing the same
    • 薄膜晶体管阵列面板及其制造方法
    • US07803672B2
    • 2010-09-28
    • US12433743
    • 2009-04-30
    • Kyung-Min ParkJin-Goo JungChun-Gi YouJae-Byoung ChaeTae-Ill Kim
    • Kyung-Min ParkJin-Goo JungChun-Gi YouJae-Byoung ChaeTae-Ill Kim
    • H01L21/00
    • H01L27/1288H01L27/1214H01L29/4908H01L29/66757
    • A method of manufacturing a thin film transistor array panel is provided, which includes: forming a semiconductor layer of polysilicon on an insulating substrate; forming a gate insulating layer on the semiconductor layer; forming a gate electrode on the gate insulating layer; forming a source region and a drain region by doping conductive impurities in the semiconductor layer; forming an interlayer insulating layer covering the gate electrode; forming a source electrode and a drain electrode respectively connected to the source and the drain regions; forming a passivation layer covering the source and the drain electrodes; forming a pixel electrode connected to the drain electrode; and forming a first alignment key when forming one selected from the semiconductor layer, the gate electrode, the source and the drain electrodes, and the pixel electrode, wherein one selected from the semiconductor layer, the gate electrode, the source and the drain electrodes, and the pixel electrode is at least formed by photolithography process using a photoresist pattern as an etch mask, and a second alignment key completely covering the first alignment key is formed at the same layer as the photoresist pattern.
    • 提供一种制造薄膜晶体管阵列面板的方法,其包括:在绝缘衬底上形成多晶硅半导体层; 在所述半导体层上形成栅极绝缘层; 在栅极绝缘层上形成栅电极; 通过掺杂半导体层中的导电杂质形成源区和漏区; 形成覆盖所述栅电极的层间绝缘层; 形成分别连接到源区和漏区的源电极和漏电极; 形成覆盖源极和漏极的钝化层; 形成连接到所述漏电极的像素电极; 以及在形成从半导体层,栅电极,源极和漏极以及像素电极中选择的一个时形成第一对准键,其中从半导体层,栅电极,源电极和漏电极中选择一个, 并且至少通过使用光致抗蚀剂图案作为蚀刻掩模的光刻工艺形成像素电极,并且在与光致抗蚀剂图案相同的层处形成完全覆盖第一对准键的第二对准键。
    • 70. 发明申请
    • THIN FILM TRANSISTOR ARRAY PANEL FOR A DISPLAY DEVICE AND A METHOD OF MANUFACTURING THE SAME
    • 用于显示装置的薄膜晶体管阵列面板及其制造方法
    • US20090311814A1
    • 2009-12-17
    • US12548834
    • 2009-08-27
    • Chun-Gi You
    • Chun-Gi You
    • H01L21/28H01L21/336
    • H01L27/12H01L27/124H01L29/66765
    • A method of manufacturing a thin film transistor array panel includes forming gate lines including gate electrodes on an insulation substrate; forming a gate insulating layer, semiconductor layer, and etch stop layer on the gate lines; etching and patterning the etch stop and semiconductor layers at the same time using photolithography; ashing and partially removing a photoresist film pattern used in the patterning of the etch stop and semiconductor layers; etching the etch stop layer exposed by removed portions of the photoresist film pattern to form etch stop members; depositing ohmic contact and data metal layers onto the etch stop members, etching the ohmic contact and data metal layers at the same time using photolithography to form data lines having source and drain electrodes, and ohmic contact members below the source and drain electrodes; forming a passivation layer on the data lines and drain electrodes; and forming pixel electrodes on the passivation layer.
    • 制造薄膜晶体管阵列面板的方法包括在绝缘基板上形成包括栅电极的栅极线; 在栅极线上形成栅极绝缘层,半导体层和蚀刻停止层; 使用光刻法同时蚀刻和图案化蚀刻停止层和半导体层; 灰化和部分去除蚀刻停止层和半导体层的图案化中使用的光致抗蚀剂膜图案; 蚀刻由去除的光致抗蚀剂膜图案的部分暴露的蚀刻停止层,以形成蚀刻停止构件; 将欧姆接触和数据金属层沉积到蚀刻停止构件上,同时使用光刻法蚀刻欧姆接触和数据金属层,以在源极和漏极之下形成具有源极和漏极以及欧姆接触构件的数据线; 在数据线和漏电极上形成钝化层; 以及在钝化层上形成像素电极。