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61. 发明授权

US5536993A Clustered field emission microtips adjacent stripe conductors 失效
标题翻译：集束场发射微带相邻条纹导体
公开(公告)号：US5536993A
公开(公告)日：1996-07-16
申请号：US378331
申请日：1995-01-26
申请人： Robert H. Taylor , Kenneth G. Vickers , Bruce E. Gnade , Arthur M. Wilson , Charles E. Primm
发明人： Robert H. Taylor , Kenneth G. Vickers , Bruce E. Gnade , Arthur M. Wilson , Charles E. Primm
IPC分类号： H01J31/12 , H01J1/30 , H01J1/304 , H01J9/02
CPC分类号： H01J1/3042 , H01J2201/319
摘要： The emitter plate 60 of a field emission flat panel display device includes a layer 68 of a resistive material and a mesh-like structure 62 of an electrically conductive material. A conductive plate 78 is also formed on top of resistive coating 68 within the spacing defined by the meshes of conductor 62. Microtip emitters 70; illustratively in the shape of cones, are formed on the upper surface of conductive plate 78. With this configuration, all of the microtip emitters 70 will be at an equal potential by virtue of their electrical connection to conductive plate 78. In one embodiment, a single conductive plate 82 is positioned within each mesh spacing of conductor 80; in another embodiment, four conductive plates 92 are symmetrically positioned within each mesh spacing of conductor 90. Also disclosed is an arrangement of emitter clusters comprising conductive plates 102 having a plurality of microtip emitters 104 formed thereon, or spaced therefrom by a thin layer of resistive material, each cluster adjacent and laterally spaced from a stripe conductor 100 by a region 106 of a resistive material. The conductive stripes 100 are substantially parallel to each other, are spaced from one another by two conductive plates 102, and are joined by bus regions 110 outside the active area of the display.
摘要翻译：场发射平板显示装置的发射极板60包括电阻材料层68和导电材料的网状结构62。导电板78也形成在由导体62的网格限定的间隔内的电阻涂层68的顶部上。微尖端发射器70; 在导电板78的上表面上形成了锥形的形状。利用这种结构，所有的微尖端发射器70由于与导电板78的电连接而处于相等的电位。在一个实施例中，单导电板82位于导体80的每个网格间隔内; 在另一个实施例中，四个导电板92对称地定位在导体90的每个网格间隔内。还公开了发射器簇的布置，其包括导电板102，其具有形成在其上的多个微尖端发射器104，或者通过薄层材料，每个簇通过电阻材料的区域106与条状导体100相邻和横向间隔开。导电条100基本上彼此平行，通过两个导电板102彼此隔开，并且通过显示器的有效区域外的总线区域110连接。

62. 发明授权

US5520563A Method of making a field emission device anode plate having an integrated getter 失效
标题翻译：制造具有集成吸气剂的场致发射器件阳极板的方法
公开(公告)号：US5520563A
公开(公告)日：1996-05-28
申请号：US474429
申请日：1995-06-07
申请人： Robert M. Wallace , Bruce E. Gnade , Chi-Cheong Shen , Jules D. Levine , Robert H. Taylor
发明人： Robert M. Wallace , Bruce E. Gnade , Chi-Cheong Shen , Jules D. Levine , Robert H. Taylor
IPC分类号： H01J9/14 , H01J9/39 , H01J29/08 , H01J29/32 , H01J29/94 , H01J31/12 , H01J9/227
CPC分类号： H01J29/94 , H01J29/085 , H01J2329/00
摘要： An anode plate 40 for use in a field emission flat panel display device comprises a transparent planar substrate 42 having a plurality of electrically conductive, parallel stripes 46 comprising the anode electrode of the device, which are covered by phosphors 48.sub.R, 48.sub.G and 48.sub.B, and a gettering material 52 in the interstices of the stripes 46. The gettering material 52 is preferably selected from among zirconium-vanadium-iron and barium. The getter 52 may be thermally reactivated by passing a current through it at selected times, or by electron bombardment from microtips on the emitter substrate. The getter 52 may be formed on a substantially opaque, electrically insulating material 50 affixed to substrate 42 in the spaces formed between conductors 46, which acts as a barrier to the passage of ambient light into and out of the device. Methods of fabricating the getter stripes 52 on the anode plate 40 are disclosed.
摘要翻译：用于场致发射平板显示装置的阳极板40包括透明平面基板42，该透明平面基板42具有由荧光体48R，48G和48B覆盖的多个导电平行条带46，其包括该装置的阳极电极，以及吸收材料52优选地选自锆 - 铁 - 铁和钡。吸气剂52可以通过在选定的时间通过电流或者通过在发射极衬底上的微尖端的电子轰击来热再活化。吸气剂52可以形成在形成在导体46之间的空间中固定到基底42上的基本上不透明的电绝缘材料50上，所述空间充当环境光进入和离开装置的通道的屏障。公开了在阳极板40上制造吸气条52的方法。

63. 发明授权

US5316793A Directed effusive beam atomic layer epitaxy system and method 失效
标题翻译：导向射流原子层外延系统及方法
公开(公告)号：US5316793A
公开(公告)日：1994-05-31
申请号：US919685
申请日：1992-07-27
申请人： Robert M. Wallace , Bruce E. Gnade
发明人： Robert M. Wallace , Bruce E. Gnade
IPC分类号： B01J19/00 , C23C16/44 , C23C16/455 , C30B25/02 , C30B25/14 , H01L21/205 , C23C16/00
CPC分类号： C23C16/45544 , C23C16/45517 , C30B25/14
摘要： A system and method for epitaxial growth of high purity materials on an atomic or molecular layer by layer basis wherein a substrate is placed in an evacuated chamber which is evacuated to a pressure of less than about 10.sup.-9 Torr and predetermined amounts of predetermined precursor gases are injected into the chamber from a location in the chamber closely adjacent the substrate to form the atomic or molecular layer at the surface of the substrate while maintaining the pressure at less than about 10.sup.-9 Torr in the chamber in regions thereof distant from the substrate. The precursor gases are provided from a plurality of tanks containing the precursor gases therein under predetermined pressure and predetermined ones of the tanks are opened to the chamber for predetermined time periods while maintaining the pressure in the tanks. A dose limiting structure is provided for directing predetermined amounts of the precursor gases principally at the substrate with a dose limiting directional structure.
摘要翻译：一种用于以原子或分子层为基础外延生长高纯度材料的系统和方法，其中将衬底放置在抽真空至小于约10-9乇的压力的预抽真空室中，并将预定量的预定前体气体从与基板紧邻的室中的位置注入室中，以在基板的表面处形成原子层或分子层，同时在远离基板的区域中将室内的压力维持在小于约10-9乇。前体气体由预定压力下容纳其中的前体气体的多个容器提供，并且预定的这些罐在腔室中保持预定的时间段同时保持在罐中的压力。提供了剂量限制结构，用于以剂量限制的方向结构主要在衬底上引导预定量的前体气体。

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