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61. 发明授权

US06875307B2 Method and apparatus for plasma processing 失效
公开(公告)号：US06875307B2
公开(公告)日：2005-04-05
申请号：US10060350
申请日：2002-02-01
申请人： Tomohiro Okumura , Ichiro Nakayama
发明人： Tomohiro Okumura , Ichiro Nakayama
IPC分类号： H01J37/32 , C23C16/00 , C23F1/00
CPC分类号： H01J37/321
摘要： A plasma processing method includes controlling a pressure of an interior of a vacuum chamber to a specified pressure by exhausting the interior of the vacuum chamber while supplying gas into the interior of vacuum chamber. While the pressure of the interior of the vacuum chamber is being controlled, high-frequency power is supplied to one end of a first conductor which is opened at another end, and which is configured as a vortex. Also, grounding one end of a second conductor which is opened at another end and which is configured as a vortex. Finally, electromagnetic waves from the first conductor and the second conductor radiate into the vacuum chamber, generating plasma in the vacuum chamber and processing a substrate placed on the electrode within the vacuum chamber.

62. 发明授权

US5916820A Thin film forming method and apparatus 失效
标题翻译：薄膜形成方法和装置
公开(公告)号：US5916820A
公开(公告)日：1999-06-29
申请号：US518307
申请日：1995-08-23
申请人： Tomohiro Okumura , Ichiro Nakayama , Yuichiro Yamada , Naoki Suzuki
发明人： Tomohiro Okumura , Ichiro Nakayama , Yuichiro Yamada , Naoki Suzuki
IPC分类号： C23C14/34 , C23C16/04 , C23C16/507 , C23C16/509 , H01L21/205 , H01L21/3105 , H01L21/316 , H01L21/00 , H05H1/24
CPC分类号： H01J37/32082 , C23C16/045 , C23C16/507 , C23C16/5096 , H01J37/321 , H01L21/02164 , H01L21/02274 , H01L21/31055 , H01L21/31612 , H01J2237/3327
摘要： A thin film forming method for forming a thin film on a surface of a substrate having a stepped portion due to a difference in level, includes steps of performing first thin film deposition with plasma generated in a processing chamber by applying high-frequency voltages to electrodes, performing thin film shaping with plasma generated in the processing chamber by applying a high-frequency voltage to a coil, and performing second thin film deposition with plasma generated in the processing chamber by applying high-frequency voltages to the electrodes.
摘要翻译：在由于电平差异而在具有阶梯部分的基板的表面上形成薄膜的薄膜形成方法包括以下步骤：通过向电极施加高频电压来在处理室中产生的等离子体进行第一薄膜沉积通过向线圈施加高频电压来对处理室中产生的等离子体进行薄膜成形，并且通过向电极施加高频电压来对处理室中产生的等离子体进行第二薄膜沉积。

63. 发明授权

US09105803B2 Polycrystalline-type solar cell panel and process for production thereof 有权
标题翻译：多晶型太阳能电池板及其制造方法
公开(公告)号：US09105803B2
公开(公告)日：2015-08-11
申请号：US13635962
申请日：2011-06-17
申请人： Ichiro Nakayama , Hitoshi Yamanishi , Yoshihisa Ohido , Nobuyuki Kamikihara , Tomohiro Okumura
发明人： Ichiro Nakayama , Hitoshi Yamanishi , Yoshihisa Ohido , Nobuyuki Kamikihara , Tomohiro Okumura
IPC分类号： H01L31/18 , H01L31/0368
CPC分类号： H01L31/182 , H01L31/03682 , Y02E10/546 , Y02P70/521
摘要： Disclosed is a polycrystalline-type silicon solar cell which can be produced at low cost by forming a polycrystalline silicon film having a PN junction in a simple manner. Specifically, an amorphous silicon film produced by sputtering using a dopant-containing silicon target is polycrystallized with plasma, and a PN junction is formed in the amorphous silicon film, thereby producing a polycrystalline silicon film having a PN junction. The polycrystalline silicon film having a PN junction is used as a silicon substrate for a polycrystalline-type silicon solar cell. Also disclosed is a technique for producing a dopant-containing silicon target from a silicon ingot.
摘要翻译：公开了通过以简单的方式形成具有PN结的多晶硅膜，可以以低成本生产的多晶硅系太阳能电池。具体地，通过使用含掺杂剂的硅靶溅射制造的非晶硅膜通过等离子体多晶化，并且在非晶硅膜中形成PN结，从而制造具有PN结的多晶硅膜。具有PN结的多晶硅膜用作多晶硅太阳能电池的硅衬底。还公开了一种从硅锭生产含掺杂剂的硅靶的技术。

64. 发明授权

US08450819B2 Plasma doping method and apparatus thereof 有权
标题翻译：等离子体掺杂方法及其装置
公开(公告)号：US08450819B2
公开(公告)日：2013-05-28
申请号：US13291186
申请日：2011-11-08
申请人： Tomohiro Okumura , Mitsuo Saitoh , Ichiro Nakayama , Taro Kitaoka
发明人： Tomohiro Okumura , Mitsuo Saitoh , Ichiro Nakayama , Taro Kitaoka
IPC分类号： H01L27/14 , H01L21/44
CPC分类号： H01J37/32412 , H01L21/2236 , H01L31/18
摘要： In a plasma torch unit, a conductor rod having a spiral shape is disposed inside a quartz pipe having a surface coated with boron glass, and a brass block is disposed on the periphery thereof. While a gas is being supplied into a cylindrical chamber, a high-frequency power is supplied to the conductor rod and a plasma is generated in the cylindrical chamber, so that a base material is irradiated with the plasma.
摘要翻译：在等离子体焰炬单元中，具有螺旋形状的导体棒设置在具有硼玻璃的表面的石英管的内部，并且在其周边设置有黄铜块。当气体被供应到圆柱形腔室中时，向导体杆供应高频电力，并且在圆柱形腔室中产生等离子体，使得等离子体照射基材。

65. 发明申请

US20120227808A1 PROCESS FOR PRODUCTION OF SILICON POWDER, MULTI-CRYSTAL-TYPE SOLAR CELL PANEL, AND PROCESS FOR PRODUCTION OF THE SOLAR CELL PANEL 审中-公开
标题翻译：硅粉，多晶型太阳能电池板的制造方法以及太阳能电池板的制造方法
公开(公告)号：US20120227808A1
公开(公告)日：2012-09-13
申请号：US13503066
申请日：2010-10-19
申请人： Ichiro Nakayama , Hitoshi Yamanishi , Yoshihisa Ooido , Nobuyuki Kamikihara , Tomohiro Okumura
发明人： Ichiro Nakayama , Hitoshi Yamanishi , Yoshihisa Ooido , Nobuyuki Kamikihara , Tomohiro Okumura
IPC分类号： H01L31/0368 , B02C19/00
CPC分类号： C01B33/02 , C01B33/037 , H01L31/1804 , H01L31/1872 , Y02E10/547 , Y02P70/521
摘要： Disclosed is a process for producing a silicon powder, which comprises the steps of: powderizing a silicon ingot having a grade of 99.999% or more into a crude silicon powder having a particle diameter of 3 mm or less by means of high-pressure purified-water cutting; and reducing the crude silicon powder into a silicon powder having a particle diameter ranging from 0.01 to 10 [mu]m inclusive by means of at least one method selected from jet milling, wet granulation, ultrasonic wave disruption and shock wave disruption. The process is a technique for producing a silicon powder rapidly from a silicon ingot without reducing purity.
摘要翻译：公开了一种硅粉的制造方法，其特征在于，包括以下步骤：将具有99.999％以上等级的硅锭粉末通过高压纯化粉末粉碎至粒径为3mm以下的粗硅粉末中，水切割并且通过至少一种选自喷射研磨，湿法制粒，超声波破碎和冲击波破碎的方法将粗硅粉减少到粒径范围为0.01至10μm的硅粉末。该方法是从硅锭快速生产硅粉而不降低纯度的技术。

66. 发明授权

US07135089B2 Method and apparatus for plasma processing 有权
公开(公告)号：US07135089B2
公开(公告)日：2006-11-14
申请号：US11067628
申请日：2005-02-28
申请人： Tomohiro Okumura , Ichiro Nakayama
发明人： Tomohiro Okumura , Ichiro Nakayama
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01J37/321
摘要： A plasma processing method includes controlling a pressure of an interior of a vacuum chamber to a specified pressure by exhausting the interior of the vacuum chamber while supplying gas into the interior of vacuum chamber. While the pressure of the interior of the vacuum chamber is being controlled, high-frequency power is supplied to one end of a first conductor which is opened at another end, and which is configured as a vortex. Also, grounding one end of a second conductor which is opened at another end and which is configured as a vortex. Finally, electromagnetic waves from the first conductor and the second conductor radiate into the vacuum chamber, generating plasma in the vacuum chamber and processing a substrate placed on the electrode within the vacuum chamber.

67. 发明授权

US06177646B1 Method and device for plasma treatment 有权
标题翻译：等离子体处理的方法和装置
公开(公告)号：US06177646B1
公开(公告)日：2001-01-23
申请号：US09180974
申请日：1998-11-17
申请人： Tomohiro Okumura , Ichiro Nakayama , Shozo Watanabe , Hideo Haraguchi
发明人： Tomohiro Okumura , Ichiro Nakayama , Shozo Watanabe , Hideo Haraguchi
IPC分类号： B23K900
CPC分类号： H01J37/32522 , H01J37/321 , H01L21/3065
摘要： Plasma is generated in a vacuum chamber (1) by supplying high frequency power to a spiral antenna (5) from an antenna-use high frequency power source (4) and by supplying high frequency power to an electrode (6) by an electrode-use high frequency power source (8) in a state where evacuating a vacuum chamber (1) while introducing a specified gas into the vacuum chamber, thereby controlling the vacuum chamber at a predetermined pressure. Plasma processing such as etching is performed on a substrate (7) located on the electrode (6), the interior of the vacuum chamber is heated to 80° C. or higher, wherein a resistance-heating heater (11) constituted of a heating element shielded from electromagnetic waves by a conductive sheath and a pressure-weld type thermocouple (10) provided on a dielectric body (9) are connected to a temperature adjuster (12). A insulating material (13) is arranged between the heater (11) and the antenna (5), and an inner chamber (16) including a belt heater (22) is also arranged.
摘要翻译：通过从天线用高频电源（4）向螺旋天线（5）提供高频电力，并通过电极 - 电极（6）向电极（6）供给高频电力，在真空室（1）中产生等离子体，在将特定气体引入真空室的同时，在真空室（1）抽真空的状态下使用高频电源（8），从而将真空室控制在规定的压力。在位于电极（6）的基板（7）上进行蚀刻等离子体处理，将真空室的内部加热至80℃以上，由加热通过导电护套屏蔽电磁波的元件和设置在电介质体（9）上的压焊型热电偶（10）连接到温度调节器（12）。绝热材料（13）设置在加热器（11）和天线（5）之间，并且还布置有包括带加热器（22）的内室（16）。

68. 发明授权

US5922223A Plasma processing method and apparatus 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US5922223A
公开(公告)日：1999-07-13
申请号：US749847
申请日：1996-11-15
申请人： Tomohiro Okumura , Hideo Haraguchi , Ichiro Nakayama , Yoshihiro Yanagi
发明人： Tomohiro Okumura , Hideo Haraguchi , Ichiro Nakayama , Yoshihiro Yanagi
IPC分类号： H01J37/32 , B23K10/00
CPC分类号： H01J37/32522 , H01J37/321
摘要： A plasma processing method and apparatus, wherein evaluation is effected while a suitable gas is introduced into a vacuum vessel, and then a high frequency voltage is applied by a high frequency discharge coil power source to a spiral discharge coil while the interior of the vacuum vessel is kept under adequate pressure, whereby a high frequency magnetic field is generated within the vacuum vessel through a dielectric plate so that electrons are accelerated by an induction field due to the high frequency magnetic field to generate plasma within the vacuum vessel for processing a substrate, characterized in that the dielectric plate is heated by a planar heater to 80.degree. C. or more, whereby the thickness of a thin film to be deposited on the dielectric plate is substantially reduced thereby to inhibit dust generation and thus substantially reduce the frequency of maintenance required for the dielectric plate. The apparatus includes a ceramic plate formed with a discharge coil fixing groove and mounted on the dielectric plate, and the planar spiral discharge coil is mounted on the ceramic plate.
摘要翻译：一种等离子体处理方法和装置，其中在合适的气体被引入真空容器中时进行评价，然后通过高频放电线圈电源将高频电压施加到螺旋放电线圈，同时真空容器的内部保持在足够的压力下，由此通过电介质板在真空容器内产生高频磁场，使得由于高频磁场而通过感应场加速电子，以在真空容器内产生用于处理衬底的等离子体，其特征在于，通过平面加热器将电介质板加热至80℃以上，由此沉积在电介质板上的薄膜的厚度大大降低，从而抑制灰尘产生，从而显着降低维护频率电介质板所需的。该装置包括形成有放电线圈固定槽并安装在电介质板上的陶瓷板，并且平面螺旋放电线圈安装在陶瓷板上。

69. 发明申请

US20130081694A1 POLYCRYSTALLINE-TYPE SOLAR CELL PANEL AND PROCESS FOR PRODUCTION THEREOF 有权
标题翻译：多晶型太阳能电池板及其制造方法
公开(公告)号：US20130081694A1
公开(公告)日：2013-04-04
申请号：US13635962
申请日：2011-06-17
申请人： Ichiro Nakayama , Hitoshi Yamanishi , Yoshihisa Chido , Nobuyuki Kamikihara , Tomohiro Okumura
发明人： Ichiro Nakayama , Hitoshi Yamanishi , Yoshihisa Chido , Nobuyuki Kamikihara , Tomohiro Okumura
IPC分类号： H01L31/18 , H01L31/0368
CPC分类号： H01L31/182 , H01L31/03682 , Y02E10/546 , Y02P70/521
摘要： Disclosed is a polycrystalline-type silicon solar cell which can be produced at low cost by forming a polycrystalline silicon film having a PN junction in a simple manner. Specifically, an amorphous silicon film produced by sputtering using a dopant-containing silicon target is polycrystallized with plasma, and a PN junction is formed in the amorphous silicon film, thereby producing a polycrystalline silicon film having a PN junction. The polycrystalline silicon film having a PN junction is used as a silicon substrate for a polycrystalline-type silicon solar cell. Also disclosed is a technique for producing a dopant-containing silicon target from a silicon ingot.
摘要翻译：公开了通过以简单的方式形成具有PN结的多晶硅膜，可以以低成本生产的多晶硅系太阳能电池。具体地，通过使用含掺杂剂的硅靶溅射制造的非晶硅膜通过等离子体多晶化，并且在非晶硅膜中形成PN结，从而制造具有PN结的多晶硅膜。具有PN结的多晶硅膜用作多晶硅太阳能电池的硅衬底。还公开了一种从硅锭生产含掺杂剂的硅靶的技术。

70. 发明申请

US20120325777A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 有权
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20120325777A1
公开(公告)日：2012-12-27
申请号：US13582557
申请日：2011-05-11
申请人： Tomohiro Okumura , Ichiro Nakayama , Mitsuo Saitoh
发明人： Tomohiro Okumura , Ichiro Nakayama , Mitsuo Saitoh
IPC分类号： H01L21/465 , B44C1/22 , C23C16/50
CPC分类号： H05H1/30 , H01J37/3211 , H01J37/32376 , H01J37/32825 , H01L21/324
摘要： A base material is placed on a base material placement face of a base material placement table. An inductively coupled plasma torch unit is structured with a cylindrical chamber structured with a cylinder made of an insulating material and provided with a rectangular slit-like plasma jet port, and lids closing opposing ends of the cylinder, a gas jet port that supplies gas into the cylindrical chamber, and a solenoid coil that generates a high frequency electromagnetic field in the cylindrical chamber. By a high frequency power supply supplying a high frequency power to the solenoid coil, plasma is generated in the cylindrical chamber, and the plasma is emitted from the plasma jet port to the base material. While relatively shifting the plasma torch unit and the base material placement table, a base material surface can be subjected to heat treatment.
摘要翻译：基材放置在基材放置台的基材放置面上。电感耦合等离子体焰炬单元构造为具有由绝缘材料构成的圆柱形腔室，该圆柱形腔体由绝缘材料构成，并设置有矩形裂缝状等离子体喷射口，并且盖住气缸的相对端部，气体喷射口将气体供应到圆柱形腔室和在圆柱形腔室中产生高频电磁场的螺线管线圈。通过向螺线管线圈提供高频电力的高频电源，在圆筒形室中产生等离子体，等离子体从等离子体喷射口发射到基体材料。在相对移动等离子体焰炬单元和基材放置台的同时，可以对基材表面进行热处理。

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