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    • 67. 发明授权
    • Multi-layer stitched write head design for high data rate application
    • 多层拼接写头设计,适用于高数据速率应用
    • US06504677B1
    • 2003-01-07
    • US09472996
    • 1999-12-28
    • Cherng-Chyi HanMao-Min Chen
    • Cherng-Chyi HanMao-Min Chen
    • G11B531
    • G11B5/313G11B5/3116
    • A design for a magnetic write head having multi-layer stitched poles, a small throat height, and a recessed yoke design is described. The write head is formed of a number of planar layers and in one embodiment the write head also has a planar top surface. In another embodiment the planarity of the top layer is disturbed in order to provide an additional wiring layer. The magnetic write head is formed on a layer of ferromagnetic material which can also be used as a shield layer for a read head combined with the write head. A first pole piece has a notch which defines the throat height of the write head. A second pole piece, recessed from the air bearing surface plane, is magnetically stitched to the first pole piece. A third pole piece, further recessed from the air bearing surface plane, is magnetically stitched to the second pole piece.
    • 描述了具有多层缝合磁极,小喉部高度和凹陷磁轭设计的磁性写入头的设计。 写头由多个平面层形成,并且在一个实施例中,写入头还具有平坦的顶表面。 在另一个实施例中,为了提供附加的布线层,扰乱顶层的平面性。 磁写头形成在铁磁材料层上,该层也可以用作与写入头组合的读取头的屏蔽层。 第一极片具有限定写头的喉部高度的凹口。 从空气轴承表面平面凹入的第二极靴被磁性缝合到第一极靴。 进一步从空气轴承面平面凹入的第三极靴被磁性缝合到第二极靴。
    • 68. 发明授权
    • Dual stripe magnetoresistive (DSMR) head with co-extensive magnetoresistive (MR)/dielectric/magnetoresistive (MR) stack layer edges
    • 具有共扩散磁阻(MR)/介质/磁阻(MR)堆叠层边缘的双条磁阻(DSMR)磁头
    • US06496333B1
    • 2002-12-17
    • US09044764
    • 1998-03-20
    • Cherng-Chyi HanMao-Min Chen
    • Cherng-Chyi HanMao-Min Chen
    • G11B539
    • G11B5/3954G11B5/3903
    • The invention comprises a pair of dual stripe magnetoresistive (DSMR) sensor elements with aligned edges of a pair of patterned magnetoresistive (MR) layers within the pair of dual stripe magnetoresistive (DSMR) sensor elements. A first embodiment of the dual stripe magnetoresistive (DSMR) sensor element employs a patterned first magnetoresistive (MR) layer, a patterned inter stripe dielectric layer and a patterned second magnetoresistive (MR) layer which are areally co-extensive, and thus have all edges thereof fully aligned. A second embodiment of the dual stripe magnetoresistive (DSMR) sensor element employs a patterned first magnetoresistive (MR) layer, a pattern ed inter stripe dielectric layer and a patterned second magnetoresistive (MR) layer, where: (1) at least a portion of an edge of the patterned first magnetoresistive (MR) layer, the pattern ed inter stripe dielectric layer and the patterned second magnetoresistive (MR layer opposite an air bearing surface (ABS) of the dual stripe magnetoresistive (DSMR) sensor element are fully aligned; and (2) there is employed a patterned backfilling dielectric layer covering those fully aligned edges of the patterned first magnetoresistive (MR) layer, the pattern ed inter stripe dielectric layer and the patterned second magnetoresistive (MR) layer, where the patterned backfilling dielectric layer does not completely cover a top surface of the patterned second magnetoresistive (MR) layer.
    • 本发明包括一对双条带磁阻(DSMR)传感器元件,其在一对双条磁阻(DSMR)传感器元件内具有一对图案化磁阻(MR)层的对准边缘。 双条带磁阻(DSMR)传感器元件的第一实施例采用图案化的第一磁阻(MR)层,图案化的条带间介电层和图案化的第二磁阻(MR)层,其被共同共同扩展,因此具有所有边缘 完全对齐。 双条带磁阻(DSMR)传感器元件的第二实施例采用图案化的第一磁阻(MR)层,图案化的条纹间介质层和图案化的第二磁阻(MR)层,其中:(1)至少部分 图案化的第一磁阻(MR)层的边缘,图案化的条带间介电层和图案化的第二磁阻(MR层与双条磁阻(DSMR)传感器元件的空气轴承表面(ABS)相对)完全对准;以及 (2)使用覆盖图案化的第一磁阻(MR)层,图案化的条纹间介电层和图案化的第二磁阻(MR)层的完全对准的边缘的图案化回填电介质层,其中图案化的回填电介质层 不完全覆盖图案化的第二磁阻(MR)层的顶表面。
    • 70. 发明授权
    • Laminated film for head applications
    • 用于头部应用的层压膜
    • US07773341B2
    • 2010-08-10
    • US11825034
    • 2007-07-03
    • Kunliang ZhangMin ZhengMin LiChen-Jung ChienCherng-Chyi Han
    • Kunliang ZhangMin ZhengMin LiChen-Jung ChienCherng-Chyi Han
    • G11B5/33
    • G11B5/3116G11B5/1278
    • A laminated main pole layer is disclosed in which a non-AFC scheme is used to break the magnetic coupling between adjacent high moment layers and reduce remanence in a hard axis direction while maintaining a high magnetic moment and achieving low values for Hch, Hce, and Hk. An amorphous material layer with a thickness of 3 to 20 Angstroms and made of an oxide, nitride, or oxynitride of one or more of Hf, Zr, Ta, Al, Mg, Zn, or Si is inserted between adjacent high moment stacks. The laminated structure also includes an alignment layer below each high moment layer within each stack. In one embodiment, a Ru coupling layer is inserted between two high moment layers in each stack to introduce an AFC scheme. An uppermost Ru layer is used as a CMP stop layer. A post annealing process may be employed to further reduce the anisotropy field (Hk).
    • 公开了一种层叠主极层,其中使用非AFC方案来破坏相邻的高力矩层之间的磁耦合,并且在保持高磁矩的同时降低硬轴方向的剩磁,并实现Hch,Hce和 Hk。 由Hf,Zr,Ta,Al,Mg,Zn或Si中的一种或多种的氧化物,氮化物或氧氮化物形成的厚度为3〜20埃的无定形材料层插入相邻的高强度叠层之间。 层叠结构还包括在每个堆叠内的每个高力矩层下面的对准层。 在一个实施例中,Ru耦合层插入每个堆叠中的两个高矩层之间以引入AFC方案。 使用最上层的Ru层作为CMP停止层。 可以采用后退火工艺来进一步降低各向异性场(Hk)。