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61. 发明授权

US08294220B2 Method for forming silicide contacts 有权
标题翻译：形成硅化物接触的方法
公开(公告)号：US08294220B2
公开(公告)日：2012-10-23
申请号：US12685265
申请日：2010-01-11
申请人： Hyun-Su Kim , Kwang-Jin Moon , Sang-Woo Lee , Eun-Ok Lee , Ho-Ki Lee
发明人： Hyun-Su Kim , Kwang-Jin Moon , Sang-Woo Lee , Eun-Ok Lee , Ho-Ki Lee
IPC分类号： H01L23/50
CPC分类号： H01L21/76855 , H01L21/28556 , H01L21/76843
摘要： Contacts having different characteristics may be created by forming a first silicide layer over a first device region of a substrate, and then forming a second silicide layer over a second device region while simultaneously further forming the first silicide layer. A first contact hole may be formed in a dielectric layer over a first device region of a substrate. A silicide layer may then be formed in the first contact hole. A second contact hole may be formed after the first contact hole and silicide layer is formed. A second silicidation may then be performed in the first and second contact holes.
摘要翻译：可以通过在衬底的第一器件区域上形成第一硅化物层，然后在第二器件区域上形成第二硅化物层，同时进一步形成第一硅化物层来产生具有不同特性的触点。可以在衬底的第一器件区域上的介电层中形成第一接触孔。然后可以在第一接触孔中形成硅化物层。可以在形成第一接触孔和硅化物层之后形成第二接触孔。然后可以在第一和第二接触孔中执行第二硅化。

62. 发明申请

US20120166309A1 AUTHENTICATION SYSTEM AND AUTHENTICATION METHOD USING BARCODES 审中-公开
标题翻译：认证系统和使用条形码的认证方法
公开(公告)号：US20120166309A1
公开(公告)日：2012-06-28
申请号：US13337802
申请日：2011-12-27
申请人： Jung Yeon HWANG , Sokjoon Lee , Gun Tae Bae , Byung Ho Chung , Sin Hyo Kim , Yun-Kyung Lee , Sang-Woo Lee , Hyeran Mun , Hyun Sook Cho
发明人： Jung Yeon HWANG , Sokjoon Lee , Gun Tae Bae , Byung Ho Chung , Sin Hyo Kim , Yun-Kyung Lee , Sang-Woo Lee , Hyeran Mun , Hyun Sook Cho
IPC分类号： G06Q30/06 , G06K5/00
CPC分类号： G06Q30/0613 , G06Q20/10 , G06Q20/3274 , G06Q20/3276 , H04L63/0823 , H04L63/0853 , H04L63/18 , H04L2463/082 , H04W12/00522
摘要： Disclosed is an authentication method using barcodes. the authentication method includes: converting into a first barcode and outputting, by a first user device, authentication related information provided from a service providing server; receiving, by a second user device, the first barcode; generating, by the second user device, signature information or authentication information on the authentication related information by using a signature key or a certificate; and providing, by the second user device, the signature information or the authentication information to the service providing server.
摘要翻译：公开了使用条形码的认证方法。所述认证方法包括：转换成第一条形码并由第一用户装置输出从服务提供服务器提供的认证相关信息; 通过第二用户设备接收第一条形码; 通过使用签名密钥或证书，由所述第二用户设备生成关于认证相关信息的签名信息或认证信息; 以及由所述第二用户设备向所述服务提供服务器提供所述签名信息或所述认证信息。

63. 发明授权

US07833855B2 Methods of producing integrated circuit devices utilizing tantalum amine derivatives 有权
标题翻译：使用钽胺衍生物生产集成电路器件的方法
公开(公告)号：US07833855B2
公开(公告)日：2010-11-16
申请号：US11474544
申请日：2006-06-26
申请人： Sang-Bom Kang , Kyung-In Choi , You-Kyoung Lee , Seong-Geon Park , Gil-Heyun Choi , Jong-Myeong Lee , Sang-Woo Lee
发明人： Sang-Bom Kang , Kyung-In Choi , You-Kyoung Lee , Seong-Geon Park , Gil-Heyun Choi , Jong-Myeong Lee , Sang-Woo Lee
IPC分类号： H01L21/8238
CPC分类号： H01L29/6659 , C23C16/34 , C23C16/56 , H01L21/265 , H01L21/28088 , H01L21/28194 , H01L21/28556 , H01L21/76841 , H01L21/823425 , H01L21/823842 , H01L29/4966 , H01L29/517 , H01L29/6656 , H01L29/66583 , H01L29/7833
摘要： In a method for forming a field effect transistor, a metal nitride layer is formed on a gate electrode insulating layer. Tantalum amine derivatives represented by the chemical formula Ta(NR1)(NR2R3)3, in which R1, R2 and R3 represent H or a C1-C6 alkyl group, may be used to form the metal nitride layer. Nitrogen may then be implanted into the metal nitride layer to increase the nitrogen content of the layer.
摘要翻译：在形成场效应晶体管的方法中，在栅电极绝缘层上形成金属氮化物层。可以使用由化学式Ta（NR1）（NR2R3）3表示的钽胺衍生物，其中R1，R2和R3代表H或C1-C6烷基，形成金属氮化物层。然后可以将氮气注入到金属氮化物层中以增加该层的氮含量。

64. 发明申请

US20100151674A1 Structures Electrically Connecting Aluminum and Copper Interconnections and Methods of Forming the Same 有权
标题翻译：结构电连接铝和铜互连及其形成方法
公开(公告)号：US20100151674A1
公开(公告)日：2010-06-17
申请号：US12714704
申请日：2010-03-01
申请人： Jong-Myeong Lee , Sang-Woo Lee , Gil-Heyun Choi , Jong-Won Hong , Kyung-In Choi , Hyun-Bae Lee
发明人： Jong-Myeong Lee , Sang-Woo Lee , Gil-Heyun Choi , Jong-Won Hong , Kyung-In Choi , Hyun-Bae Lee
IPC分类号： H01L21/768
CPC分类号： H01L21/76804 , H01L21/76843 , H01L23/5226 , H01L23/53223 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A structure and formation method for electrically connecting aluminum and copper interconnections stabilize a semiconductor metallization process using an inner shape electrically connecting the aluminum and copper interconnections. To this end, a copper interconnection is disposed on a semiconductor substrate. An interconnection induction layer and an interconnection insertion layer are sequentially formed on the copper interconnection to have a contact hole exposing the copper interconnection. An upper diameter of the contact hole may be formed to be larger than a lower diameter thereof. A barrier layer and an aluminum interconnection are filled in the contact hole. The aluminum interconnection is formed not to directly contact the copper interconnection through the contact hole.
摘要翻译：用于电连接铝和铜互连的结构和形成方法使用电连接铝和铜互连的内部形状来稳定半导体金属化工艺。为此，铜互连设置在半导体衬底上。互连感应层和互连插入层依次形成在铜互连上以具有暴露铜互连的接触孔。接触孔的上直径可以形成为大于其直径。阻挡层和铝互连填充在接触孔中。铝互连形成为不通过接触孔直接接触铜互连。

65. 发明申请

US20090261716A1 Organic Light Emitting Device 失效
标题翻译：有机发光装置
公开(公告)号：US20090261716A1
公开(公告)日：2009-10-22
申请号：US12360755
申请日：2009-01-27
申请人： Beohm-Rock CHOI , Un-Cheol Sung , Jung-Soo Rhee , Sang-Woo Lee , Soo-Yeon Lee
发明人： Beohm-Rock CHOI , Un-Cheol Sung , Jung-Soo Rhee , Sang-Woo Lee , Soo-Yeon Lee
IPC分类号： H01J1/62
CPC分类号： H01L51/5265 , G09G3/3225 , G09G2300/0452 , H01L27/3213 , H01L27/322 , H01L27/3244 , H01L51/5036 , H01L51/5281 , H01L2251/558
摘要： The present invention relates to an organic light emitting device including a first pixel, a second pixel, and a third pixel each displaying a color. Each pixel includes a reflecting member; a transflective member forming a micro-cavity along with the reflecting member; an organic light emitting member disposed between the reflecting member and the transflective member; a transparent electrode disposed between the reflecting member and the transflective member; and a compensation layer disposed between the reflecting member and the transflective member to form a predetermined distance between the reflecting member and the transflective member, wherein the distance between the reflecting member and the transflective member are substantially the same in the first pixel, the second pixel and the third pixel.
摘要翻译：本发明涉及一种包括第一像素，第二像素和每个显示颜色的第三像素的有机发光器件。每个像素包括反射构件; 与反射构件一起形成微腔的半透反射构件; 设置在所述反射构件和所述透反反射构件之间的有机发光构件; 透明电极，设置在所述反射构件和所述半透反射构件之间; 以及补偿层，其设置在所述反射构件和所述半透半反镜构件之间，以在所述反射构件和所述半透半反镜构件之间形成预定距离，其中所述反射构件和所述半透反射构件之间的距离在所述第一像素中基本相同，和第三个像素。

66. 发明授权

US07560331B2 Method for forming a silicided gate 有权
标题翻译：硅化物栅的形成方法
公开(公告)号：US07560331B2
公开(公告)日：2009-07-14
申请号：US11354748
申请日：2006-02-14
申请人： Hyun-Su Kim , Jong-Ho Yun , Sang-Woo Lee , Seok-Woo Jung , Eun-Ji Jung
发明人： Hyun-Su Kim , Jong-Ho Yun , Sang-Woo Lee , Seok-Woo Jung , Eun-Ji Jung
IPC分类号： H01L21/8238
CPC分类号： H01L21/28097 , H01L29/66507 , H01L29/66545
摘要： A gate is silicided through its sides while limiting silicidation through the top of the gate. A blocking layer may be formed over the gate layer, and the sidewalls of the gate layer are exposed. A layer of metal is formed on the sidewalls of the gate and thermally treated to silicide the gate layer. The sidewalls of the gate maybe exposed through an etching process in which a silicide layer formed over the blocking layer is used as an etch mask.
摘要翻译：栅极通过其侧面硅化，同时限制通过栅极顶部的硅化物。可以在栅极层上形成阻挡层，并且露出栅极层的侧壁。在栅极的侧壁上形成金属层，并对其进行热处理以对栅极层进行硅化处理。栅极的侧壁可以通过其中在阻挡层上形成的硅化物层用作蚀刻掩模的蚀刻工艺暴露。

67. 发明申请

US20090161864A1 BLOCK CIPHER ARIA SUBSTITUTION APPARATUS AND METHOD 有权
标题翻译：块芯片替代设备和方法
公开(公告)号：US20090161864A1
公开(公告)日：2009-06-25
申请号：US12176649
申请日：2008-07-21
申请人： Sang-Woo Lee , Yong-Sung Jeon , Seungmin Lee , Donghyuk Lee , Taek Yong Nam , Jong Soo Jang
发明人： Sang-Woo Lee , Yong-Sung Jeon , Seungmin Lee , Donghyuk Lee , Taek Yong Nam , Jong Soo Jang
IPC分类号： H04L9/06
CPC分类号： H04L9/0631 , H04L2209/122 , H04L2209/125
摘要： A block cipher ARIA substitution apparatus, the apparatus includes a first Sbox operation unit for performing operations of a substitution box S1 and a substitution box S1−1; a second Sbox operation unit for performing operations of a substitution box S2 and a substitution box S2−1; and a control unit for determining modes of the first Sbox operation unit and the second Sbox operation unit. The first Sbox operation unit has a first inverse affine transformation unit for performing an inverse affine operation for obtaining S1−1; a finite field inverse element operation unit for computing an inverse element of GF(28) or a result value of the first inverse affine transformation unit; a first affine transformation unit for performing an affine operation for obtaining S1; and a first and a second multiplexer
摘要翻译：一种分组密码ARIA替代装置，该装置包括：第一Sbox操作单元，用于执行替换框S1和替换框S1-1的操作; 用于执行替代框S2和替代框S2-1的操作的第二Sbox操作单元; 以及用于确定第一Sbox操作单元和第二Sbox操作单元的模式的控制单元。第一Sbox操作单元具有用于执行用于获得S1-1的反向仿射操作的第一反向仿射变换单元; 用于计算GF（28）的逆元素或第一反仿像变换单元的结果值的有限域逆元素运算单元; 用于执行用于获得S1的仿射运算的第一仿射变换单元; 以及第一和第二多路复用器

68. 发明授权

US07382726B2 Node system, dual ring communication system using node system, and communication method thereof 失效
标题翻译：节点系统，使用节点系统的双环通信系统及其通信方法
公开(公告)号：US07382726B2
公开(公告)日：2008-06-03
申请号：US10426402
申请日：2003-04-30
申请人： Sang-Woo Lee , Heyung-Sub Lee , Hyeong-Ho Lee
发明人： Sang-Woo Lee , Heyung-Sub Lee , Hyeong-Ho Lee
IPC分类号： H04J3/14
CPC分类号： H04L45/125 , H04L12/42 , H04L47/10 , H04L47/11 , H04L47/263 , Y02D50/10
摘要： A dual ring communication method using a node system includes: with congestion occurring in a first node system, the first node system generating a congestion information packet and forwarding it to an upper node system positioned in a direction opposed to a direction of forwarding a data packet; a second node system determining whether it is the last node involved in the congestion; adding its congestion information to the congestion information packet and forwarding the congestion information packet to an upper node system when the second node system is not the last node; performing bandwidth allocation for the node systems in other case; and generating a bandwidth allocation packet and transmitting the bandwidth allocation packet to the node systems involved in the congestion.
摘要翻译：使用节点系统的双环通信方法包括：具有在第一节点系统中发生的拥塞，所述第一节点系统生成拥塞信息分组并将其转发到位于与转发数据分组的方向相反的方向上的上层节点系统 ; 确定是否是所述拥塞中涉及的最后一个节点的第二节点系统; 将所述拥塞信息添加到所述拥塞信息分组，并且当所述第二节点系统不是所述最后节点时，将所述拥塞信息分组转发到上级节点系统; 在其他情况下，为节点系统执行带宽分配; 以及生成带宽分配分组并将所述带宽分配分组发送到所述拥塞中涉及的节点系统。

69. 发明申请

US20080042290A1 Structures Electrically Connecting Aluminum and Copper Interconnections and Methods of Forming the Same 审中-公开
标题翻译：结构电连接铝和铜互连及其形成方法
公开(公告)号：US20080042290A1
公开(公告)日：2008-02-21
申请号：US11679723
申请日：2007-02-27
申请人： Jong-Myeong Lee , Sang-Woo Lee , Gil-Heyun Choi , Jong-Won Hong , Kyung-In Choi , Hyun-Bae Lee
发明人： Jong-Myeong Lee , Sang-Woo Lee , Gil-Heyun Choi , Jong-Won Hong , Kyung-In Choi , Hyun-Bae Lee
IPC分类号： H01L23/522 , H01L21/311
CPC分类号： H01L21/76804 , H01L21/76843 , H01L23/5226 , H01L23/53223 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A structure and formation method for electrically connecting aluminum and copper interconnections stabilize a semiconductor metallization process using an inner shape electrically connecting the aluminum and copper interconnections. To this end, a copper interconnection is disposed on a semiconductor substrate. An interconnection induction layer and an interconnection insertion layer are sequentially formed on the copper interconnection to have a contact hole exposing the copper interconnection. An upper diameter of the contact hole may be formed to be larger than a lower diameter thereof. A barrier layer and an aluminum interconnection are filled in the contact hole. The aluminum interconnection is formed not to directly contact the copper interconnection through the contact hole.
摘要翻译：用于电连接铝和铜互连的结构和形成方法使用电连接铝和铜互连的内部形状来稳定半导体金属化工艺。为此，铜互连设置在半导体衬底上。互连感应层和互连插入层依次形成在铜互连上以具有暴露铜互连的接触孔。接触孔的上直径可以形成为大于其直径。阻挡层和铝互连填充在接触孔中。铝互连形成为不通过接触孔直接接触铜互连。

70. 发明授权

US07294600B2 Supported hybrid metallocene catalyst, method for preparing the same, and method for preparing polyolefin using the same 有权
标题翻译：负载型杂茂金属茂催化剂及其制备方法，以及使用其制备聚烯烃的方法
公开(公告)号：US07294600B2
公开(公告)日：2007-11-13
申请号：US10527581
申请日：2004-03-24
申请人： Ki-Soo Lee , Hyo-Sun Lee , Eun-Jung Lee , Sang-Woo Lee , Choong-Hoon Lee
发明人： Ki-Soo Lee , Hyo-Sun Lee , Eun-Jung Lee , Sang-Woo Lee , Choong-Hoon Lee
IPC分类号： C08F4/02 , C08F4/646 , C08F4/6392
CPC分类号： C08F10/00 , C08F4/65912 , C08F4/65925 , C08F4/65927 , C08F110/02 , C08F210/16 , C08L23/04 , C08L23/0815 , C08L2205/02 , C08L2314/06 , Y10S526/943 , C08F4/65916 , C08F4/65904 , C08L2666/06 , C08F2500/05 , C08F2500/12 , C08F210/08 , C08F2500/04 , C08F2500/13
摘要： The present invention relates to a supported metallocene catalyst used for preparing polyolefin whose physical properties and molecular weight distribution can be easily controlled, a method for preparing the same, and a method for preparing polyolefin using the same, more particularly to a support metallocene catalyst wherein at least two kinds of metallocenic transition compounds are supported on a metal oxide such as silica, a method for preparing the same, and a method for preparing polyolefin using the same.
摘要翻译：本发明涉及用于制备容易控制其物理性质和分子量分布的聚烯烃的负载型茂金属催化剂及其制备方法，以及使用其制备聚烯烃的方法，更具体地涉及载体茂金属催化剂，其中至少两种金属茂过渡化合物负载在诸如二氧化硅的金属氧化物上，其制备方法和使用其制备聚烯烃的方法。

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