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61. 发明申请

WO2003026005A3 FORMATION OF REFRACTORY METAL NITRIDES USING CHEMISORPTION TECHNIQUES 审中-公开
公开(公告)号：WO2003026005A3
公开(公告)日：2003-03-27
申请号：PCT/US2002/028884
申请日：2002-09-10
申请人： APPLIED MATERIALS, INC.
发明人： BYUN, Jeong, Soo , YIN, Lin , WU, Frederick, C. , SRINIVAS, Ramanujapuram, A. , GELATOS, Avgerinos , MAK, Alfred, W. , CHANG, Mei , KORI, Moris , SINHA, Ashok
IPC分类号： H01L21/768
摘要： Refractory metal nitride layers for integrated circuit fabrication are described. The refractory metal nitride layer may be formed by sequentially chemisorbing alternating monolayers of a nitrogen-containing compound and a refractory metal compound onto a substrate. A composite refractory metal nitride layer is also described. The composite refractory metal nitride layer may be formed by sequentially chemisorbing monolayers of a nitrogen-containing compound and two or more refractory metal compounds onto a substrate.

62. 发明申请

WO1999041766A1 REACTOR FOR CHEMICAL VAPOR DEPOSITION OF TITANIUM 审中-公开
标题翻译：化学气相沉积反应器
公开(公告)号：WO1999041766A1
公开(公告)日：1999-08-19
申请号：PCT/US1999/002842
申请日：1999-02-09
申请人： APPLIED MATERIALS, INC.
发明人： UMOTOY, Salvador , NGUYEN, Anh, N. , TRAN, Truc, T. , LEI, Lawrence, Chung, Lai , CHANG, Mei
IPC分类号： H01J37/32
CPC分类号： C23C16/45565 , C23C16/455 , H01J37/3244 , H01J37/32449
摘要： A plasma reaction chamber particularly suited for plasma-enhanced chemical vapor deposition of titanium using TiCl 4 as the precursor. The reactor includes a perforated showerhead faceplate and a perforated blocker plate within the showerhead to evenly distribute the atomized TiCl 4 . Both the showerhead faceplate and the blocker plate are made of solid nickel. RF power is applied between the showerhead faceplate and the heater pedestal supporting the wafer to excite the processing gas into a plasma. A shield ring is set on the periphery of the heater pedestal to confine the plasma to the processing region above the wafer. The shield ring is supported on the heater pedestal by a downwardly descending ridge, thereby minimizing thermal flow. The shield ring also protects the periphery of the top surface of the heater pedestal not covered by the wafer. An isolator electrically insulates the RF-driven showerhead from the chamber body and is disposed generally above the shield ring. The bottom of the isolator and the top of the shield ring are similarly curved with a nearly constant gap between them. The small gap creates a flow choke between the processing region and an annular pumping channel. The curve of the gap prevents the plasma from extending into the pumping channel. The bottom of the chamber below the heater pedestal is covered with a quartz thermal shield insert to reduce the flow of head to the chamber wall. A lift ring for raising lift pins selectively lifting the wafer is also composed of quartz.
摘要翻译：一种等离子体反应室，特别适用于使用TiCl4作为前体的钛的等离子体增强化学气相沉积。反应器包括穿孔淋浴头面板和淋浴器内的穿孔阻塞板，以均匀分布雾化的TiCl4。喷头面板和阻挡板均由固体镍制成。在喷头面板和支撑晶片的加热器基座之间施加RF功率以将处理气体激发成等离子体。屏蔽环设置在加热器基座的周边上，以将等离子体限制在晶片上方的处理区域。屏蔽环通过向下的下降脊支撑在加热器底座上，从而最小化热流。屏蔽环还保护未被晶片覆盖的加热器基座的顶表面的周边。隔离器将RF驱动的喷头与室主体电绝缘并且大致设置在屏蔽环的上方。隔离器的底部和屏蔽环的顶部类似地弯曲，它们之间具有几乎恒定的间隙。小间隙在处理区域和环形泵送通道之间产生流动扼流圈。间隙的曲线阻止等离子体延伸到泵送通道中。加热器底座下面的腔室底部覆盖有石英热屏蔽插入件，以减少头部到室壁的流动。用于升高提升针的提升环选择性地提升晶片也由石英组成。

63. 发明申请

WO2020139683A1 METHODS AND APPARATUS FOR ENHANCING SELECTIVITY OF TITANIUM AND TITANIUM SILICIDES DURING CHEMICAL VAPOR DEPOSITION 审中-公开
公开(公告)号：WO2020139683A1
公开(公告)日：2020-07-02
申请号：PCT/US2019/067394
申请日：2019-12-19
申请人： APPLIED MATERIALS, INC.
发明人： KURATOMI, Takashi , CHEN, I-Cheng , GELATOS, Avgerinos V. , LEI, Pingyan , CHANG, Mei , TANG, Xianmin
IPC分类号： C23C16/14 , C23C16/42 , C23C16/505 , C23C16/04 , C23C16/56
摘要： Methods and apparatus for selectively depositing a titanium material layer atop a substrate having a silicon surface and a dielectric surface are disclosed. In embodiments an apparatus is configured for forming a remote plasma reaction between titanium tetrachloride (TiCl 4 ), hydrogen (H 2 ) and argon (Ar) in a region between a lid heater and a showerhead of a process chamber at a first temperature of 200 to 800 degrees Celsius; and flowing reaction products into the process chamber to selectively form a titanium material layer upon the silicon surface of the substrate.

64. 发明申请

WO2019204120A1 TUNING WORK FUNCTION OF P-METAL WORK FUNCTION FILMS THROUGH VAPOR DEPOSITION 审中-公开
公开(公告)号：WO2019204120A1
公开(公告)日：2019-10-24
申请号：PCT/US2019/027053
申请日：2019-04-11
申请人： APPLIED MATERIALS, INC.
发明人： JIAN, Guoqiang , TANG, Wei , LIN, Chi-Chou , MA, Paul , YANG, Yixiong , CHANG, Mei , LIU, Wenyi
IPC分类号： H01L21/02 , H01L21/324 , H01L29/66 , H01L29/78 , H01L21/67 , C23C16/455
摘要： The present disclosure relates to a method for forming a p-metal work function nitride film having a desired p-work function on a substrate, including: adjusting one or more of a temperature of a substrate, a duration of one or more temporally separated vapor phase pulses, a ratio of a tungsten precursor to a titanium precursor, or a pressure of a reaction to tune a work function of a p-metal work function nitride film to a desired p-work function, and contacting the substrate with temporally separated vapor phase pulses of the tungsten precursor, the titanium precursor, and a reactive gas to form a p-metal work function nitride film thereon having the desired p-work function.

65. 发明申请

WO2019014170A1 METHODS FOR DEPOSITING SEMICONDUCTOR FILMS 审中-公开
公开(公告)号：WO2019014170A1
公开(公告)日：2019-01-17
申请号：PCT/US2018/041379
申请日：2018-07-10
申请人： APPLIED MATERIALS, INC.
发明人： XU, Yi , KURATOMI, Takashi , GELATOS, Avgerinos V. , BANTHIA, Vikash , CHANG, Mei , DAITO, Kazuya
IPC分类号： H01L21/02 , H01L21/56 , H01L21/324
摘要： A method for forming a film on a substrate in a semiconductor process chamber includes forming a first layer on the substrate using a plasma enhanced process and a gas compound of a chloride-based gas, a hydrogen gas, and an inert gas. The process chamber is then purged and the first layer is thermally soaked with a hydrogen-based precursor gas. The process chamber is then purged again and the process may be repeated with or without the plasma enhanced process until a certain film thickness is achieved on the substrate.

66. 发明申请

WO2018098059A9 DEPOSITION OF METAL FILMS 审中-公开
公开(公告)号：WO2018098059A9
公开(公告)日：2018-05-31
申请号：PCT/US2017/062479
申请日：2017-11-20
申请人： APPLIED MATERIALS, INC.
发明人： GELATOS, Avgerinos V. , KURATOMI, Takashi , LIM, Hyuck , CHEN, I-Cheng , CHANG, Mei
IPC分类号： H01L21/02 , H01L21/285
摘要： Methods to selectively deposit titanium-containing films on silicon-containing surfaces in high aspect ratio features of substrates comprise plasma-enhanced chemical vapor deposition (PECVD) process at a plasma powers in the range of about 1 to less than about 700 mWatts/cm2 and frequencies in the range of about 10 kHz to about 50 MHz. The titanium films may be selectively deposited with a selectivity in the range of at least about 1.3:1 metallic silicon surfaces relative to silicon dioxide surfaces.

67. 发明申请

WO2017058567A1 METHODS FOR PRE-CLEANING CONDUCTIVE INTERCONNECT STRUCTURES 审中-公开
标题翻译：预清洁导电互连结构的方法
公开(公告)号：WO2017058567A1
公开(公告)日：2017-04-06
申请号：PCT/US2016/052602
申请日：2016-09-20
申请人： APPLIED MATERIALS, INC.
发明人： XIE, Xiangjin , LIU, Feng Q. , YAO, Daping , JANSEN, Alexander , LEE, Joung Joo , ALLEN, Adolph Miller , TANG, Xianmin , CHANG, Mei
IPC分类号： C23G5/04 , C23G5/032 , C23G3/00 , C11D7/26 , C11D17/00 , H05K3/26
CPC分类号： H01L21/02068 , B08B3/00 , B08B3/106 , B08B5/00 , B08B7/0035 , B08B9/00 , B08B9/027 , C23G1/24 , F01D5/005 , F05D2230/90 , H01L21/02063 , H01L21/76814
摘要： Methods for processing a substrate are provided herein. In some embodiments, method of processing a substrate includes: heating a substrate disposed within a processing volume of a substrate processing chamber to a temperature of up to about 400 degrees Celsius, wherein the substrate comprises an exposed conductive material; and exposing the substrate to a process gas comprising about 80 to about 100 wt. % of an alcohol vapor to reduce a contaminated surface of the conductive material. In some embodiments, the substrate further comprises a first surface having an opening formed in the first surface, wherein the exposed conductive material is part of a conductive material disposed in the substrate and aligned with the opening such that a portion of the conductive material disposed in the substrate is exposed through the opening.
摘要翻译：本文提供了处理基板的方法。在一些实施例中，处理衬底的方法包括：将设置在衬底处理室的处理体积内的衬底加热到高达约400摄氏度的温度，其中衬底包括暴露的导电材料; 并将基底暴露于包含约80至约100wt。％的醇蒸气以减少导电材料的污染表面。在一些实施例中，衬底还包括具有形成在第一表面中的开口的第一表面，其中暴露的导电材料是设置在衬底中并与开口对准的导电材料的一部分，使得导电材料的一部分设置在基板通过开口露出。

68. 发明申请

WO2016003891A1 APPARATUS AND METHOD FOR SELF-REGULATING FLUID CHEMICAL DELIVERY 审中-公开
标题翻译：用于自我调节流体化学输送的装置和方法
公开(公告)号：WO2016003891A1
公开(公告)日：2016-01-07
申请号：PCT/US2015/038296
申请日：2015-06-29
申请人： APPLIED MATERIALS, INC.
发明人： SALINAS, Martin Jeff , DONG, Youqun , THOMPSON, David , CHANG, Mei
IPC分类号： B01J4/00 , B01J4/02
CPC分类号： F17C6/00 , C23C16/4481 , F24F6/025 , G05D9/02 , G05D9/12 , Y10T137/6416 , Y10T137/7306
摘要： Methods and apparatus for chemical delivery are provided herein. In some embodiments, a first reservoir holds a first volume of fluid, receives a carrier gas, and outputs the carrier gas together with vapor derived from the first volume of fluid. A second reservoir holds a second volume of fluid and is capable of delivering a part of the second volume of fluid to the first reservoir. A self-regulating tube extends from the first reservoir to a region above the second volume of fluid in the second reservoir.
摘要翻译：本文提供了用于化学物质输送的方法和装置。在一些实施例中，第一储存器容纳第一体积的流体，接收载气，并将载气与来自第一体积流体的蒸气一起输出。第二储存器容纳第二体积的流体，并且能够将第二体积的流体的一部分输送到第一储存器。自调节管从第一储存器延伸到在第二储存器中的第二体积流体上方的区域。

69. 发明申请

WO2014186563A1 DEPOSITION CHAMBERS WITH UV TREATMENT AND METHODS OF USE 审中-公开
标题翻译：具有UV处理的沉积室和使用方法
公开(公告)号：WO2014186563A1
公开(公告)日：2014-11-20
申请号：PCT/US2014/038174
申请日：2014-05-15
申请人： APPLIED MATERIALS, INC. , LAM, Hyman , DENNY, Nicholas R. , AUBUCHON, Joseph , CHANG, Mei
发明人： LAM, Hyman , DENNY, Nicholas R. , AUBUCHON, Joseph , CHANG, Mei
IPC分类号： H01L21/205 , H01L21/02
CPC分类号： H01L21/32051 , C23C16/482 , H01L21/67115 , H01L21/76862
摘要： Described are apparatus and methods for processing semiconductor wafers so that a film can be deposited on the wafer and the film can be UV treated without the need to move the wafer to a separate location for treatment. The apparatus and methods include a window which is isolated from the reactive gases by a flow of an inert gas.
摘要翻译：描述了用于处理半导体晶片的装置和方法，使得膜可以沉积在晶片上，并且膜可以被UV处理，而不需要将晶片移动到单独的处理位置。该装置和方法包括通过惰性气体流与活性气体隔离的窗口。

70. 发明申请

WO2013059591A1 APPARATUS AND METHOD FOR PROVIDING UNIFORM FLOW OF GAS 审中-公开
标题翻译：用于提供气体均匀流量的装置和方法
公开(公告)号：WO2013059591A1
公开(公告)日：2013-04-25
申请号：PCT/US2012/061022
申请日：2012-10-19
申请人： APPLIED MATERIALS, INC. , YUDOVSKY, Joseph , CHANG, Mei , GUNGOR, Faruk , MA, Paul F. , CHU, David , KAO, Chien-Teh , LAM, Hyman , WU, Dien-Yeh
发明人： YUDOVSKY, Joseph , CHANG, Mei , GUNGOR, Faruk , MA, Paul F. , CHU, David , KAO, Chien-Teh , LAM, Hyman , WU, Dien-Yeh
IPC分类号： H01L21/205
CPC分类号： F17D3/00 , Y10T137/7833
摘要： Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectible with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels.
摘要翻译：提供了具有输送通道的气体分配设备，其具有入口端，出口端和沿着该长度间隔开的多个孔。入口端可连接到入口气体源，出口端可与真空源连接。还提供了具有螺旋输送通道的气体分配设备，缠绕的螺旋输送通道，分离输送通道，合流输送通道和成形输送通道，其中入口端和出口端构造成用于在输送通道内快速交换气体。

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