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61. 发明授权

US08143609B2 Three-terminal cascade switch for controlling static power consumption in integrated circuits 有权
标题翻译：用于控制集成电路静态功耗的三端子级联开关
公开(公告)号：US08143609B2
公开(公告)日：2012-03-27
申请号：US12551643
申请日：2009-09-01
申请人： Lia Krusin-Elbaum , Dennis M. Newns , Matthew R. Wordeman
发明人： Lia Krusin-Elbaum , Dennis M. Newns , Matthew R. Wordeman
IPC分类号： H01L47/00 , H01L29/04
CPC分类号： H01L45/1226 , H01L27/24 , H01L45/06 , H01L45/1206 , H01L45/1233 , H01L45/1286 , H01L45/144 , H01L45/148
摘要： A switching circuit includes a plurality of three-terminal PCM switching devices connected between a voltage supply terminal and a sub-block of logic. Each of the switching devices includes a PCM disposed in contact between a first terminal and a second terminal, a heating device disposed in contact between the second terminal and a third terminal, the heating device positioned proximate the PCM, and configured to switch the conductivity of a transformable portion of the PCM between a lower resistance state and a higher resistance state; and an insulating layer configured to electrically isolate the heater from said PCM material, and the heater from the first terminal. The third terminal of a first of the PCM switching devices is coupled to a set/reset switch, and the third terminal of the remaining PCM switching devices is coupled to the second terminal of an adjacent PCM switching device in a cascade configuration.
摘要翻译：开关电路包括连接在电压供给端子和逻辑子块之间的多个三端子PCM开关装置。每个开关装置包括设置在第一端子和第二端子之间接触的PCM，加热装置，其设置成接触在第二端子和第三端子之间，加热装置位于PCM附近，并且被配置为切换 PCM的可变形部分在较低电阻状态和较高电阻状态之间; 以及绝缘层，其被配置为将加热器与所述PCM材料电隔离，并且所述加热器与所述第一端子电隔离。第一个PCM开关器件的第三个端子耦合到一个设置/复位开关，其余的PCM开关器件的第三个端子以级联配置耦合到相邻PCM开关器件的第二个端子。

62. 发明授权

US07732798B2 Programmable via structure for three dimensional integration technology 有权
标题翻译：可编程通孔结构，用于三维集成技术
公开(公告)号：US07732798B2
公开(公告)日：2010-06-08
申请号：US12178921
申请日：2008-07-24
申请人： Bruce G. Elmegreen , Lia Krusin-Elbaum , Chung Hon Lam , Dennis M. Newns , Matthew R. Wordeman , Albert M. Young
发明人： Bruce G. Elmegreen , Lia Krusin-Elbaum , Chung Hon Lam , Dennis M. Newns , Matthew R. Wordeman , Albert M. Young
IPC分类号： H01L47/00
CPC分类号： H01L45/144 , H01L23/5226 , H01L23/5252 , H01L23/5256 , H01L45/06 , H01L45/1206 , H01L45/122 , H01L45/1226 , H01L45/1286 , H01L2924/0002 , H01L2924/00
摘要： A programmable link structure for use in three dimensional integration (3DI) semiconductor devices includes a via filled at least in part with a phase change material (PCM) and a heating device proximate the PCM. The heating device is configured to switch the conductivity of a transformable portion of the PCM between a lower resistance crystalline state and a higher resistance amorphous state. Thereby, the via defines a programmable link between an input connection located at one end thereof and an output connection located at another end thereof.
摘要翻译：用于三维积分（3DI）半导体器件的可编程链路结构包括至少部分地填充有相变材料（PCM）和靠近PCM的加热装置的通孔。加热装置被配置为将PCM的可变形部分的电导率切换到较低电阻结晶状态和较高电阻无定形状态。因此，通路限定位于其一端的输入连接与位于其另一端的输出连接之间的可编程连接。

63. 发明授权

US07692959B2 Multilayer storage class memory using externally heated phase change material 有权
标题翻译：使用外部加热相变材料的多层存储类存储器
公开(公告)号：US07692959B2
公开(公告)日：2010-04-06
申请号：US12107338
申请日：2008-04-22
申请人： Lia Krusin-Elbaum , Bruce G Elmegreen , Dennis M. Newns , Xinlin Wang
发明人： Lia Krusin-Elbaum , Bruce G Elmegreen , Dennis M. Newns , Xinlin Wang
IPC分类号： G11C11/00
CPC分类号： G11C13/003 , G11C13/0004 , G11C13/0069 , G11C2013/008 , G11C2213/71 , G11C2213/72 , G11C2213/74 , H01L27/2409 , H01L27/2445 , H01L27/2481 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/148 , H01L45/1683
摘要： A multi-layer, phase change material (PCM) memory apparatus includes a plurality of semiconductor layers sequentially formed over a base substrate, wherein each layer comprises an array of memory cells formed therein, each memory cell further including a PCM element, a first diode serving as a heater diode in thermal proximity to the PCM element and configured to program the PCM element to one of a low resistance crystalline state and a high resistance amorphous state, and a second diode serving a sense diode for a current path used in reading the state of the PCM element; the base substrate further including decoding, programming and sensing circuitry formed therein, with each of the plurality of semiconductor layers spaced by an insulating layer; and intralayer wiring for communication between the base substrate circuitry and the array of memory cells in each of the semiconductor layers.
摘要翻译：多层相变材料（PCM）存储装置包括顺序地形成在基底基板上的多个半导体层，其中每个层包括形成在其中的存储单元的阵列，每个存储单元还包括PCM元件，第一二极管用作加热二极管，其热量接近PCM元件并且被配置为将PCM元件编程为低电阻晶体状态和高电阻非晶态之一，以及用于读取电流路径中的电流路径的感测二极管的第二二极管 PCM元素的状态; 所述基底基板还包括其中形成的解码，编程和感测电路，所述多个半导体层中的每一个由绝缘层隔开; 以及用于在基底基板电路和每个半导体层中的存储器单元阵列之间进行通信的层内布线。

64. 发明授权

US07646006B2 Three-terminal cascade switch for controlling static power consumption in integrated circuits 失效
标题翻译：用于控制集成电路静态功耗的三端子级联开关
公开(公告)号：US07646006B2
公开(公告)日：2010-01-12
申请号：US11393259
申请日：2006-03-30
申请人： Lia Krusin-Elbaum , Dennis M. Newns , Matthew R. Wordeman
发明人： Lia Krusin-Elbaum , Dennis M. Newns , Matthew R. Wordeman
IPC分类号： H01L47/00
CPC分类号： H01L45/1226 , H01L27/24 , H01L45/06 , H01L45/1206 , H01L45/1233 , H01L45/1286 , H01L45/144 , H01L45/148
摘要： A switching circuit configured for controlling static power consumption in integrated circuits includes a plurality of three-terminal, phase change material (PCM) switching devices connected between a voltage supply terminal and a corresponding sub-block of integrated circuit logic. Each of the PCM switching devices further includes a PCM disposed in contact between a first terminal and a second terminal, a heating device disposed in contact between the second terminal and a third terminal, the heating device positioned proximate the PCM, and configured to switch the conductivity of a transformable portion of the PCM between a lower resistance crystalline state and a higher resistance amorphous state; and an insulating layer configured to electrically isolate the heater from said PCM material, and the heater from the first terminal. The third terminal of a first of the PCM switching devices is coupled to a set/reset switch, and the third terminal of the remaining PCM switching devices is coupled to the second terminal of an adjacent PCM switching device in a cascade configuration.
摘要翻译：配置成用于控制集成电路中的静态功耗的开关电路包括连接在电压源端子和集成电路逻辑的对应子块之间的多个三端子相变材料（PCM）开关器件。每个PCM切换装置还包括设置在第一端子和第二端子之间接触的PCM，设置在第二端子和第三端子之间的加热装置，加热装置位于PCM附近，并且被配置为将 PCM的可变形部分的电导率在较低电阻结晶状态和较高电阻无定形状态之间; 以及绝缘层，其被配置为将加热器与所述PCM材料电隔离，并且所述加热器与所述第一端子电隔离。第一个PCM开关器件的第三个端子耦合到一个设置/复位开关，其余的PCM开关器件的第三个端子以级联配置耦合到相邻PCM开关器件的第二个端子。

65. 发明申请

US20090305460A1 Programmable Via Devices with Air Gap Isolation 有权
标题翻译：具有空气间隙隔离的可编程通孔器件
公开(公告)号：US20090305460A1
公开(公告)日：2009-12-10
申请号：US12544964
申请日：2009-08-20
申请人： Kuan-Neng Chen , Lia Krusin-Elbaum , Dennis M. Newns , Sampath Purushothaman
发明人： Kuan-Neng Chen , Lia Krusin-Elbaum , Dennis M. Newns , Sampath Purushothaman
IPC分类号： H01L21/06
CPC分类号： H01L45/06 , H01L28/20 , H01L45/1206 , H01L45/122 , H01L45/1286 , H01L45/1293 , H01L45/144 , H01L45/148 , H01L45/1683
摘要： Programmable via devices and methods for the fabrication thereof are provided. In one aspect, a programmable via device is provided. The programmable via device comprises a first dielectric layer; a heater over the first dielectric layer; an air gap separating at least a portion of the heater from the first dielectric layer; an isolation layer over the first dielectric layer covering at least a portion of the heater; a capping layer over a side of the isolation layer opposite the first dielectric layer; at least one programmable via extending through the capping layer and at least a portion of the isolation layer and in contact with the heater, the programmable via comprising at least one phase change material; a conductive cap over the programmable via; a second dielectric layer over a side of the capping layer opposite the isolation layer; a first conductive via and a second conductive via, each extending through the second dielectric layer, the capping layer and at least a portion of the isolation layer and in contact with the heater; and a third conductive via extending through the second dielectric layer and in contact with the conductive cap.
摘要翻译：提供可编程的器件及其制造方法。在一个方面，提供了可编程通路装置。可编程通孔装置包括第一介电层; 第一介电层上的加热器; 将所述加热器的至少一部分与所述第一介电层分开的气隙; 覆盖所述加热器的至少一部分的所述第一介电层上的隔离层; 在所述隔离层的与所述第一介电层相对的一侧上的覆盖层; 至少一个可编程通道，其延伸穿过所述封盖层和所述隔离层的至少一部分并与所述加热器接触，所述可编程通孔包括至少一个相变材料; 可编程通孔上的导电盖; 在覆盖层的与隔离层相对的一侧上的第二电介质层; 第一导电通孔和第二导电通孔，每个延伸穿过第二介电层，封盖层和至少一部分隔离层并与加热器接触; 以及延伸穿过所述第二介电层并与所述导电盖接触的第三导电通孔。

66. 发明授权

US07534710B2 Coupled quantum well devices (CQWD) containing two or more direct selective contacts and methods of making same 失效
标题翻译：包含两个或更多个直接选择性接触的耦合量子阱器件（CQWD）及其制造方法
公开(公告)号：US07534710B2
公开(公告)日：2009-05-19
申请号：US11315691
申请日：2005-12-22
申请人： Yasunao Katayama , Dennis M. Newns , Chang C. Tsuei
发明人： Yasunao Katayama , Dennis M. Newns , Chang C. Tsuei
IPC分类号： H01L21/8252 , H01L29/778 , H01L29/88
CPC分类号： H01L29/152 , B82Y10/00 , G11C11/14 , H01L29/41766 , H01L29/66431 , H01L29/66462 , H01L29/7782 , H01L29/7783 , Y10S977/937
摘要： The present invention relates to a device structure that contains two or more conducting layers, two peripheral insulating layers, one or more intermediate insulating layers, and two or more conductive contacts. The two or more conducting layers are sandwiched between the two peripheral insulating layers, and they are spaced apart by the intermediate insulating layers to form two or more quantum wells. Each of the conductive contacts is directly and selectively connected with one of the conducting layers, so the individual quantum wells can be selectively accessed through the conductive contacts. Such a device structure preferably contains a coupled quantum well devices having two or more quantum wells that can be coupled together by inter-well tunneling effect at degenerate energy levels. More preferably, the device structure contains a memory cell having three quantum wells that can be arranged and constructed to define two different memory states.
摘要翻译：本发明涉及一种器件结构，其包含两个或多个导电层，两个外围绝缘层，一个或多个中间绝缘层以及两个或多个导电触点。两个或更多个导电层夹在两个外围绝缘层之间，并且它们被中间绝缘层隔开以形成两个或更多个量子阱。每个导电触点直接和选择性地连接到导电层中的一个，因此可以通过导电触点选择性地访问各个量子阱。这样的器件结构优选地包含具有两个或更多个量子阱的耦合量子阱器件，所述量子阱可以在简并能级处通过阱间隧道效应耦合在一起。更优选地，器件结构包含具有三个量子阱的存储单元，其可被布置和构造以限定两个不同的存储器状态。

67. 发明申请

US20090072213A1 Programmable Via Structure for Three Dimensional Integration Technology 有权
标题翻译：可编程通道结构三维集成技术
公开(公告)号：US20090072213A1
公开(公告)日：2009-03-19
申请号：US12178921
申请日：2008-07-24
申请人： Bruce G. Elmegreen , Lia Krusin-Elbaum , Chung Hon Lam , Dennis M. Newns , Matthew R. Wordeman , Albert M. Young
发明人： Bruce G. Elmegreen , Lia Krusin-Elbaum , Chung Hon Lam , Dennis M. Newns , Matthew R. Wordeman , Albert M. Young
IPC分类号： H01L47/00
CPC分类号： H01L45/144 , H01L23/5226 , H01L23/5252 , H01L23/5256 , H01L45/06 , H01L45/1206 , H01L45/122 , H01L45/1226 , H01L45/1286 , H01L2924/0002 , H01L2924/00
摘要： A programmable link structure for use in three dimensional integration (3DI) semiconductor devices includes a via filled at least in part with a phase change material (PCM) and a heating device proximate the PCM. The heating device is configured to switch the conductivity of a transformable portion of the PCM between a lower resistance crystalline state and a higher resistance amorphous state. Thereby, the via defines a programmable link between an input connection located at one end thereof and an output connection located at another end thereof
摘要翻译：用于三维积分（3DI）半导体器件的可编程链路结构包括至少部分地填充有相变材料（PCM）和靠近PCM的加热装置的通孔。加热装置被配置为将PCM的可变形部分的电导率切换到较低电阻结晶状态和较高电阻无定形状态。因此，通路限定位于其一端的输入连接与位于其另一端的输出连接之间的可编程连接

68. 发明申请

US20090033360A1 PROGRAMMABLE VIA DEVICES WITH AIR GAP ISOLATION 有权
标题翻译：可通过具有空气隔离的装置进行编程
公开(公告)号：US20090033360A1
公开(公告)日：2009-02-05
申请号：US11833354
申请日：2007-08-03
申请人： Kuan-Neng Chen , Lia Krusin-Elbaum , Dennis M. Newns , Sampath Purushothaman
发明人： Kuan-Neng Chen , Lia Krusin-Elbaum , Dennis M. Newns , Sampath Purushothaman
IPC分类号： H03K19/177 , H01L45/00
CPC分类号： H01L45/06 , H01L28/20 , H01L45/1206 , H01L45/122 , H01L45/1286 , H01L45/1293 , H01L45/144 , H01L45/148 , H01L45/1683
摘要： Programmable via devices and methods for the fabrication thereof are provided. In one aspect, a programmable via device is provided. The programmable via device comprises a first dielectric layer; a heater over the first dielectric layer; an air gap separating at least a portion of the heater from the first dielectric layer; an isolation layer over the first dielectric layer covering at least a portion of the heater; a capping layer over a side of the isolation layer opposite the first dielectric layer; at least one programmable via extending through the capping layer and at least a portion of the isolation layer and in contact with the heater, the programmable via comprising at least one phase change material; a conductive cap over the programmable via; a second dielectric layer over a side of the capping layer opposite the isolation layer; a first conductive via and a second conductive via, each extending through the second dielectric layer, the capping layer and at least a portion of the isolation layer and in contact with the heater; and a third conductive via extending through the second dielectric layer and in contact with the conductive cap.
摘要翻译：提供可编程的器件及其制造方法。在一个方面，提供了可编程通路装置。可编程通孔装置包括第一介电层; 第一介电层上的加热器; 将所述加热器的至少一部分与所述第一介电层分开的气隙; 覆盖所述加热器的至少一部分的所述第一介电层上的隔离层; 在所述隔离层的与所述第一介电层相对的一侧上的覆盖层; 至少一个可编程通道，其延伸穿过所述封盖层和所述隔离层的至少一部分并与所述加热器接触，所述可编程通孔包括至少一个相变材料; 可编程通孔上的导电盖; 在覆盖层的与隔离层相对的一侧上的第二电介质层; 第一导电通孔和第二导电通孔，每个延伸穿过第二介电层，封盖层和至少一部分隔离层并与加热器接触; 以及延伸穿过所述第二介电层并与所述导电盖接触的第三导电通孔。

69. 发明申请

US20090033358A1 PROGRAMMABLE VIA DEVICES IN BACK END OF LINE LEVEL 有权
标题翻译：通过线路后端的设备可编程
公开(公告)号：US20090033358A1
公开(公告)日：2009-02-05
申请号：US11833321
申请日：2007-08-03
申请人： Kuan-Neng Chen , Lia Krusin-Elbaum , Dennis M. Newns , Sampath Purushothaman
发明人： Kuan-Neng Chen , Lia Krusin-Elbaum , Dennis M. Newns , Sampath Purushothaman
IPC分类号： H01L45/00 , H03K19/177
CPC分类号： H01L28/65 , H01L28/20 , H01L45/06 , H01L45/1206 , H01L45/122 , H01L45/1286 , H01L45/144 , H01L45/148 , H01L45/1683 , Y10S977/754
摘要： Programmable via devices and methods for the fabrication thereof are provided. In one aspect, a programmable via device is provided. The programmable via device comprises a first dielectric layer; at least one isolation layer over the first dielectric layer; a heater within the isolation layer; a capping layer over a side of the isolation layer opposite the first dielectric layer; at least one programmable via extending through the capping layer and at least a portion of the isolation layer and in contact with the heater, the programmable via comprising at least one phase change material; a conductive cap over the programmable via; a second dielectric layer over a side of the capping layer opposite the isolation layer; a first conductive via and a second conductive via, each extending through the second dielectric layer, the capping layer and at least a portion of the isolation layer and in contact with the heater; and a third conductive via extending through the second dielectric layer and in contact with the conductive cap.
摘要翻译：提供可编程的器件及其制造方法。在一个方面，提供了可编程通路装置。可编程通孔装置包括第一介电层; 在所述第一介电层上方的至少一个隔离层; 隔离层内的加热器; 在所述隔离层的与所述第一介电层相对的一侧上的覆盖层; 至少一个可编程通道，其延伸穿过所述封盖层和所述隔离层的至少一部分并与所述加热器接触，所述可编程通孔包括至少一个相变材料; 可编程通孔上的导电盖; 在覆盖层的与隔离层相对的一侧上的第二电介质层; 第一导电通孔和第二导电通孔，每个延伸穿过第二介电层，封盖层和至少一部分隔离层并与加热器接触; 以及延伸穿过所述第二介电层并与所述导电盖接触的第三导电通孔。

70. 发明申请

US20080224118A1 HEAT-SHIELDED LOW POWER PCM-BASED REPROGRAMMABLE EFUSE DEVICE 失效
公开(公告)号：US20080224118A1
公开(公告)日：2008-09-18
申请号：US12127994
申请日：2008-05-28
申请人： James P. Doyle , Bruce G. Elmegreen , Lia Krusin-Elbaum , Chung Hon Lam , Xiao Hu Liu , Dennis M. Newns , Christy S. Tyberg
发明人： James P. Doyle , Bruce G. Elmegreen , Lia Krusin-Elbaum , Chung Hon Lam , Xiao Hu Liu , Dennis M. Newns , Christy S. Tyberg
IPC分类号： H01L47/00
CPC分类号： H01L45/1233 , G11C13/0004 , H01L45/06 , H01L45/1206 , H01L45/1286 , H01L45/1293 , H01L45/144 , H01L45/148 , H01L45/1666
摘要： An electrically re-programmable fuse (eFUSE) device for use in integrated circuit devices includes an elongated heater element, an electrically insulating liner surrounding an outer surface of the elongated heater element, corresponding to a longitudinal axis thereof, leaving opposing ends of the elongated heater element in electrical contact with first and second heater electrodes. A phase change material (PCM) surrounds a portion of an outer surface of the electrically insulating liner, a thermally and electrically insulating layer surrounds an outer surface of the PCM, with first and second fuse electrodes in electrical contact with opposing ends of the PCM. The PCM is encapsulated within the electrically insulating liner, the thermally and electrically insulating layer, and the first and second fuse electrodes.

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