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61. 发明授权

US07279048B2 Semiconductor manufacturing apparatus 有权
标题翻译：半导体制造装置
公开(公告)号：US07279048B2
公开(公告)日：2007-10-09
申请号：US10987304
申请日：2004-11-15
申请人： Kenji Shinma , Hirohiko Nakata , Masuhiro Natsuhara
发明人： Kenji Shinma , Hirohiko Nakata , Masuhiro Natsuhara
IPC分类号： G01R31/02 , H01L21/68 , C23C16/00 , C23C16/458
CPC分类号： C23C16/4586 , H01L21/67109
摘要： To provide a semiconductor manufacturing device, which is provided with a wafer holder capable of improving the cooling rate of a heater and retaining the homogeneity of the temperature distribution of the heater at cooling time and which can markedly shorten the time period for treating a semiconductor wafer.The wafer holder includes the heater 1 for carrying the semiconductor wafer thereon to heat the same, and the cooling block 2 for cooling the heater 1. The cooling block 2 is arranged so as to come into and out of abutment against the back 1b of the heater on the side opposed to the wafer carrying face 1a, and its abutment face 2a to abut against the heater 1 has a warpage of 1 mm or less. The cooling block 2 can be provided therein with a passage for a cooling liquid. It is preferred that the passage has a sectional area of 1 mm2 or larger over 80% of its entire length, and that the area of the portion having the passage formed is 3% or larger of the entire area of the abutment face 2a.
摘要翻译：为了提供一种半导体制造装置，其具有能够提高加热器的冷却速度的晶片保持器，并且保持加热器在冷却时的温度分布的均匀性，并且可以显着缩短处理半导体晶片的时间段。晶片保持器包括用于在其上承载半导体晶片以加热其的加热器1和用于冷却加热器1的冷却块2。冷却块2被布置成在与晶片承载面1a相对的一侧进入和离开加热器的背面1b，并且其抵靠加热器1的邻接面2a具有翘曲为1mm以下。冷却块2可以在其中设置有用于冷却液体的通道。优选的是，通道的截面面积为其整个长度的80％以上的1mm 2以上，并且具有通路形状的部分的面积为整体的3％以上邻接面2a的区域。

62. 发明申请

US20070205788A1 Wafer holder, and wafer prober provided therewith 有权
标题翻译：晶片支架，以及提供的晶圆探针
公开(公告)号：US20070205788A1
公开(公告)日：2007-09-06
申请号：US11701417
申请日：2007-02-02
申请人： Masuhiro Natsuhara , Tomoyuki Awazu , Hirohiko Nakata , Katsuhiro Itakura
发明人： Masuhiro Natsuhara , Tomoyuki Awazu , Hirohiko Nakata , Katsuhiro Itakura
IPC分类号： G01R31/02
CPC分类号： G01R31/2865 , H01L21/68757
摘要： A wafer holder is provided having high rigidity and an enhanced heat-insulating effect that allow positional accuracy and heating uniformity to be improved, a chip to be rapidly heated and cooled, and the manufacturing cost to be reduced, and a wafer prober apparatus on which the wafer holder is mounted. The wafer holder of the present invention includes a chuck top for mounting a wafer, a support member for supporting the chuck top, and a stand for supporting the support member. The chuck top has a thermal conductivity K1 and a Young's modulus Y1; the support member has a thermal conductivity K2 and a Young's modulus Y2; and the stand has a thermal conductivity K3 and a Young's modulus Y3. K1>K2 and K1>K3; and Y3>Y1 and Y3>Y2.
摘要翻译：提供了具有高刚性和增强的隔热效果的晶片保持器，其允许提高位置精度和加热均匀性，快速加热和冷却的芯片，以及降低的制造成本，以及晶片探测器装置，其上安装晶片保持架。本发明的晶片保持器包括用于安装晶片的卡盘顶部，用于支撑卡盘顶部的支撑构件和用于支撑支撑构件的支架。卡盘顶部具有热导率K 1和杨氏模量Y 1; 支撑构件具有热导率K 2和杨氏模量Y 2; 并且支架具有导热系数K 3和杨氏模量Y 3。 K 1> K 2和K 1> K 3; Y 3> Y 1，Y 3> Y 2。

63. 发明申请

US20070069174A1 Composite and susceptor for semiconductor manufacturing device and power module with the same 审中-公开
标题翻译：复合和感应器用于半导体制造装置和电源模块相同
公开(公告)号：US20070069174A1
公开(公告)日：2007-03-29
申请号：US11509822
申请日：2006-08-25
申请人： Masuhiro Natsuhara , Hirohiko Nakata , Tomoyuki Awazu , Akira Mikumo
发明人： Masuhiro Natsuhara , Hirohiko Nakata , Tomoyuki Awazu , Akira Mikumo
IPC分类号： H01F1/04 , C01G49/08 , B22F3/00 , C04B35/64 , C04B35/26 , H01F1/14
CPC分类号： B22F7/02 , B22F2998/00 , C04B35/565 , C04B35/581 , C04B35/62218 , C04B41/009 , C04B41/52 , C04B41/89 , C04B2111/00844 , C04B2235/3217 , C04B2235/3225 , C04B2235/3418 , C04B2235/3865 , C04B2235/3873 , C04B2235/9607 , H01L23/142 , H01L23/3735 , H01L2924/0002 , C04B41/4523 , C04B41/5155 , C04B41/5096 , C04B41/522 , C04B41/4543 , C04B41/5031 , C04B41/5035 , C04B41/5045 , C04B41/5063 , C04B41/5066 , C04B41/4572 , C04B41/51 , C04B35/10 , C04B35/00 , C04B38/00 , B22F3/26 , H01L2924/00
摘要： The present invention provides a composite having superior reliability and superior binding strength with respect to films formed on substrates by aerosol methods, and also provides a semiconductor manufacturing devices susceptor and a power module substrate. In the composite of the present invention, a film formed by an aerosol method is provided on a surface of a composite formed from a plurality of metals. Alternatively, a film formed by an aerosol method may be provided on the surface of a composite formed from a metal and a ceramic. The composite preferably has a thermal conductivity of 100 W/mK or greater, and the film formed by the aerosol method preferably has a thermal conductivity of 1 W/mK or greater.
摘要翻译：本发明提供了一种具有优异的可靠性和相对于通过气溶胶方法在基底上形成的膜的优异结合强度的复合材料，并且还提供半导体制造装置基座和功率模块基板。在本发明的复合材料中，在由多种金属形成的复合体的表面上设置由气溶胶法形成的膜。或者，通过气溶胶法形成的膜可以设置在由金属和陶瓷形成的复合材料的表面上。该复合体的导热率优选为100W / m·K以上，通过气溶胶法形成的膜的导热率优选为1W / m·K以上。

64. 发明申请

US20070056952A1 Heating unit and wafer prober having the same 审中-公开
标题翻译：加热单元和晶圆探测器具有相同的功能
公开(公告)号：US20070056952A1
公开(公告)日：2007-03-15
申请号：US11496711
申请日：2006-08-01
申请人： Katsuhiro Itakura , Masuhiro Natsuhara , Tomoyuki Awazu , Hirohiko Nakata
发明人： Katsuhiro Itakura , Masuhiro Natsuhara , Tomoyuki Awazu , Hirohiko Nakata
IPC分类号： H05B3/68
CPC分类号： H05B3/26 , H05B3/262 , H05B2203/013
摘要： A heater unit that can be fabricated in a simple manner and is highly reliable, as well as a wafer prober mounting the heater unit are provided. The heater unit of the present invention includes a mounting base mounting an object to be processed and a heater unit heating the mounting base, wherein the heater body has an insulating sheet and a heating body formed on the insulating sheet. Preferably, at least a part of the heating body is covered with a protective layer, and preferably, the material of the heating body is metal foil. Further, preferably, the material of the protective layer is heat-resistant rubber, and preferably, the material of the insulating sheet is heat-resistant resin.
摘要翻译：提供了可以以简单的方式制造并且高度可靠的加热器单元以及安装加热器单元的晶片探测器。本发明的加热器单元包括安装待加工物体的安装基座和加热安装基座的加热器单元，其中加热器主体具有形成在绝缘片上的绝缘片和加热体。优选地，加热体的至少一部分被保护层覆盖，并且优选地，加热体的材料是金属箔。此外，优选地，保护层的材料是耐热橡胶，并且优选地，绝缘片的材料是耐热树脂。

65. 发明申请

US20070046307A1 Body for keeping a wafer, heater unit and wafer prober 失效
标题翻译：保存晶片，加热器单元和晶圆探针的主体
公开(公告)号：US20070046307A1
公开(公告)日：2007-03-01
申请号：US11498966
申请日：2006-08-04
申请人： Katsuhiro Itakura , Masuhiro Natsuhara , Hirohiko Nakata
发明人： Katsuhiro Itakura , Masuhiro Natsuhara , Hirohiko Nakata
IPC分类号： G01R31/02
CPC分类号： G01R31/2865 , G01R31/2875
摘要： A wafer holding body used for a wafer prober for testing a semiconductor wafer includes a chuck top having a conductive layer on a surface thereof and a support body supporting the chuck top. The support body has a base portion opposing the chuck top and a side portion extending from the perimeter of the base portion to the chuck top to support the chuck top. A cavity portion is formed between the chuck top and the base portion of the support body. A reflection plate is provided in the cavity portion. A heater unit and a wafer prober includes the wafer holding body.
摘要翻译：用于晶片探测器的用于测试半导体晶片的晶片保持体包括其表面上具有导电层的卡盘顶板和支撑卡盘顶部的支撑体。支撑体具有与卡盘顶部相对的基部和从基部的周边延伸到卡盘顶部以支撑卡盘顶部的侧部。在卡盘顶部和支撑体的基部之间形成空腔部分。反射板设置在空腔部分中。加热器单元和晶片探测器包括晶片保持体。

66. 发明申请

US20070046305A1 Wafer holder and wafer prober having the same 审中-公开
标题翻译：晶圆支架和晶圆探测器具有相同的功能
公开(公告)号：US20070046305A1
公开(公告)日：2007-03-01
申请号：US11498255
申请日：2006-08-03
申请人： Tomoyuki Awazu , Katsuhiro Itakura , Masuhiro Natsuhara , Hirohiko Nakata
发明人： Tomoyuki Awazu , Katsuhiro Itakura , Masuhiro Natsuhara , Hirohiko Nakata
IPC分类号： G01R31/02
CPC分类号： G01R31/2865
摘要： A wafer holder that can improve throughput by improving heating rate and thermal uniformity of a prober, as well as a wafer prober having the same are provided. The wafer holder has a chuck top conductive layer on a surface of a chuck top, and a heater body at a portion other than the portion where the chuck top conductive layer is formed, wherein maximum outer diameter l of an area where the heater body exists is smaller than diameter L of the chuck top, and the maximum outer diameter l and thickness t of the chuck top are set such that the thickness t and diameter Wl of a wafer to be inspected satisfy the relation of 1+4t>Wl.
摘要翻译：提供了可以通过提高探针的加热速率和热均匀性以及具有其的晶片探测器来提高生产率的晶片保持器。晶片保持器在卡盘顶面的表面上具有卡盘顶部导电层，并且在除了形成卡盘顶部导电层的部分之外的部分处的加热器主体，其中加热器主体存在的区域的最大外径l 小于卡盘顶部的直径L，并且卡盘顶部的最大外径l和厚度t被设定为使得待检查的晶片的厚度t和直径W1满足1 + 4t> W1的关系。

67. 发明申请

US20060035107A1 Aluminum nitride sintered body 失效
标题翻译：氮化铝烧结体
公开(公告)号：US20060035107A1
公开(公告)日：2006-02-16
申请号：US11198009
申请日：2005-08-04
申请人： Masuhiro Natsuhara , Kenji Shinma , Hirohiko Nakata
发明人： Masuhiro Natsuhara , Kenji Shinma , Hirohiko Nakata
IPC分类号： B32B15/01
CPC分类号： C04B35/581 , C04B35/62655 , C04B35/645 , C04B2235/3225 , C04B2235/5409 , C04B2235/5445 , C04B2235/608 , C04B2235/6584 , C04B2235/668 , C04B2235/72 , C04B2235/724 , C04B2235/963 , C04B2235/9692 , Y10T428/12736
摘要： In an aluminum nitride sintered body, the bismuth and chlorine contents are restricted to be no more than fixed amounts. More specifically, in an aluminum nitride sintered body having aluminum nitride as its main component, the bismuth content in the aluminum nitride sintered body is no more than 30 ppm and the chlorine content is no more than 100 ppm. It would be preferable to form a resistance heating body on the aluminum nitride sintered body, and it would be preferable for the aluminum nitride sintered body to be used as a semiconductor heating part.
摘要翻译：在氮化铝烧结体中，铋和氯的含量被限定为不大于固定量。更具体地说，在以氮化铝为主要成分的氮化铝烧结体中，氮化铝烧结体中的铋含量不超过30ppm，氯含量不大于100ppm。优选在氮化铝烧结体上形成电阻加热体，优选将氮化铝烧结体用作半导体加热部。

68. 发明申请

US20050170651A1 Semiconductor manufacturing apparatus 有权
标题翻译：半导体制造装置
公开(公告)号：US20050170651A1
公开(公告)日：2005-08-04
申请号：US10987304
申请日：2004-11-15
申请人： Kenji Shinma , Hirohiko Nakata , Masuhiro Natsuhara
发明人： Kenji Shinma , Hirohiko Nakata , Masuhiro Natsuhara
IPC分类号： H05B3/10 , C23C16/458 , H01L21/00 , H01L21/027 , H01L21/205 , H01L21/302 , H01L21/461 , H01L21/68 , H01L21/683 , H05B3/74
CPC分类号： C23C16/4586 , H01L21/67109
摘要： To provide a semiconductor manufacturing device, which is provided with a wafer holder capable of improving the cooling rate of a heater and retaining the homogeneity of the temperature distribution of the heater at cooling time and which can markedly shorten the time period for treating a semiconductor wafer. The wafer holder includes the heater 1 for carrying the semiconductor wafer thereon to heat the same, and the cooling block 2 for cooling the heater 1. The cooling block 2 is arranged so as to come into and out of abutment against the back 1b of the heater on the side opposed to the wafer carrying face 1a, and its abutment face 2a to abut against the heater 1 has a warpage of 1 mm or less. The cooling block 2 can be provided therein with a passage for a cooling liquid. It is preferred that the passage has a sectional area of 1 mm2 or larger over 80% of its entire length, and that the area of the portion having the passage formed is 3% or larger of the entire area of the abutment face 2a.
摘要翻译：为了提供一种半导体制造装置，其具有能够提高加热器的冷却速度的晶片保持器，并且保持加热器的冷却时间的温度分布的均匀性，并且可以显着缩短处理半导体晶片的时间周期。晶片保持器包括用于在其上承载半导体晶片以加热其的加热器1和用于冷却加热器1的冷却块2。冷却块2被布置成在与晶片承载面1a相对的一侧进入和离开加热器的背面1b，并且其抵靠加热器1的邻接面2a具有翘曲为1mm以下。冷却块2可以在其中设置有用于冷却液体的通道。优选的是，通道的截面面积为其整个长度的80％以上的1mm 2以上，并且具有通路形状的部分的面积为整体的3％以上邻接面2a的区域。

69. 发明授权

US06881128B1 Ceramics base plate and method for producing the same 失效
标题翻译：陶瓷基板及其制造方法
公开(公告)号：US06881128B1
公开(公告)日：2005-04-19
申请号：US09342537
申请日：1999-06-29
申请人： Masuhiro Natsuhara , Hirohiko Nakata
发明人： Masuhiro Natsuhara , Hirohiko Nakata
IPC分类号： B26F3/00 , B28B17/00 , B28D1/00 , C04B35/71 , B24B1/00 , B28D1/02
CPC分类号： B28B17/0018 , Y10T225/12
摘要： A method of producing ceramics base plates is disclosed, comprising forming a continuous flaw on at least one surface of a ceramics sintered base plate from end to end using a flawing tool and dividing the ceramics sintered base plate along the flaw by applying an external force. It is preferred that a blade edge portion of the flawing tool is made of a cemented carbide or diamond. By the method of the invention, the ceramics sintered base plate can be easily divided, and ceramics base plates excellent in dimensional accuracy are obtained without lowering the strength thereof.
摘要翻译：公开了一种陶瓷基板的制造方法，其特征在于，使用有缺陷的工具，在陶瓷烧结基板的至少一个表面上形成连续的缺陷，并通过施加外力将所述陶瓷烧结基板沿着所述缺陷分割。优选的是，有缺陷的工具的刀刃部分由硬质合金或金刚石制成。通过本发明的方法，可以容易地分割陶瓷烧结基板，并且在不降低其强度的情况下获得尺寸精度优异的陶瓷基板。

70. 发明申请

US20050022744A1 Susceptor for Semiconductor Manufacturing Equipment, and Semiconductor Manufacturing Equipment in Which the Susceptor Is Installed 审中-公开
标题翻译：半导体制造设备的受害者以及安装了受体感染者的半导体制造设备
公开(公告)号：US20050022744A1
公开(公告)日：2005-02-03
申请号：US10710727
申请日：2004-07-30
申请人： Masuhiro Natsuhara , Hirohiko Nakata
发明人： Masuhiro Natsuhara , Hirohiko Nakata
IPC分类号： C23C16/458 , H01L21/02 , H01L21/205 , H01L21/265 , H01L21/3065 , H01L21/683 , C23C16/00
CPC分类号： C23C16/4586 , C23C16/4581
摘要： Enhances the durability of electrodes for supplying electricity to electroconductive components formed in the interior and/or on the surface of a susceptor ceramic heater-block, affords for semi-conductor manufacturing equipment a susceptor in which incidents of inter-electrode shorting are prevented, and makes available semiconductor manufacturing equipment in which the susceptor is installed. Rendering as unitary articles the electrodes for supplying electricity to electroconductive components formed in the interior and/or on the surface of a ceramic heater-block contributes to improved electrode endurance. Further, setting up a tubular piece encompassing each electrode contributes to preventing incidents of shorting. Introducing inert gas into the interior of the tubular pieces further improves the reliability of the electrodes. Semiconductor manufacturing equipment of excellent productivity and throughput can be made available by installing a susceptor of this kind into the semiconductor manufacturing equipment.
摘要翻译：提高用于向形成在基座陶瓷加热器块的内部和/或表面上的导电部件供电的电极的耐久性，为半导体制造设备提供防止电极间短路事件的感受体，以及提供安装感受器的半导体制造设备。作为整体制品，用于向形成在陶瓷加热器块的内部和/或表面的导电部件供电的电极有助于提高电极耐久性。此外，设置包围每个电极的管状件有助于防止短路的事件。将惰性气体引入管状件的内部进一步提高了电极的可靠性。通过将这种基座安装在半导体制造装置中，可以获得优异的生产率和产量的半导体制造设备。

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