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61. 发明授权

US07214418B2 Structure having holes and method for producing the same 失效
标题翻译：具有孔的结构及其制造方法
公开(公告)号：US07214418B2
公开(公告)日：2007-05-08
申请号：US11235131
申请日：2005-09-27
申请人： Tohru Den , Kazuhiko Fukutani , Nobuhiro Yasui
发明人： Tohru Den , Kazuhiko Fukutani , Nobuhiro Yasui
IPC分类号： B32B3/24
CPC分类号： C23C14/5873 , C22C30/00 , C23C14/185 , C25D11/045 , C25D11/18 , C25D11/20 , Y10S977/781 , Y10S977/811 , Y10S977/814 , Y10T428/218 , Y10T428/24273 , Y10T428/24322 , Y10T428/24331 , Y10T428/28
摘要： A structure having a hole, including a substrate, a first layer including an alumina hole, and a second layer disposed between the substrate and the fist layer, wherein the second layer contains silicon, and has a smaller hole than the alumina hole.
摘要翻译：具有孔的结构，包括基板，包括氧化铝孔的第一层和设置在基板和第一层之间的第二层，其中第二层包含硅，并且具有比氧化铝孔小的孔。

62. 发明授权

US07183012B2 Structure having pores, magnetic recording medium, and method of manufacturing same 失效
标题翻译：具有孔的结构，磁记录介质及其制造方法
公开(公告)号：US07183012B2
公开(公告)日：2007-02-27
申请号：US10389935
申请日：2003-03-18
申请人： Tatsuya Saito , Tohru Den
发明人： Tatsuya Saito , Tohru Den
IPC分类号： G11B5/708 , G11B5/71 , B05D5/12
CPC分类号： C23C14/5853 , C23C14/5886 , C25D11/045 , C25D11/16 , C25D11/20 , G11B5/855 , G11B5/858
摘要： The invention provides a magnetic recording medium and a method of manufacturing the magnetic recording medium, in which a high density and good storage stability can be achieved by giving anisotropy in shape to a magnetic substance. A plan shape of the magnetic substance in the magnetic recording medium, which appears on the recording surface side, is an ellipse that is present within a rectangle and has a minor axis with a length equal to a short side of the rectangle. A quadrilateral defined by four intersects of two adjacent vertical rows and two adjacent horizontal rows, each of these rows comprising a plurality of pores, has a rectangular or rhombic shape.
摘要翻译：本发明提供一种磁记录介质和制造磁记录介质的方法，其中通过给予磁性物质的形状各向异性，可以实现高密度和良好的储存稳定性。在记录表面侧出现的磁记录介质中的磁性物质的平面形状是存在于矩形内并具有长度等于矩形短边的短轴的椭圆。由两个相邻的垂直行和两个相邻的水平行的四个相交限定的四边形，这些行中的每一行包括多个孔，具有矩形或菱形。

63. 发明申请

US20060254924A1 Plating solution, process for producing a structure with the plating solution, and apparatus employing the plating solution 失效
标题翻译：电镀液，电镀液的制造方法以及使用电镀液的装置
公开(公告)号：US20060254924A1
公开(公告)日：2006-11-16
申请号：US10566949
申请日：2005-01-14
申请人： Shigeru Ichihara , Tohru Den , Nobuhiro Yasui
发明人： Shigeru Ichihara , Tohru Den , Nobuhiro Yasui
IPC分类号： C25D3/56 , C25C7/02
CPC分类号： C25D3/562 , C25D3/56 , C25D3/567 , C25D5/50 , C25D7/001 , G11B5/858 , H01F10/123 , H01F10/147 , H01F41/26
摘要： A stable FePt plating solution is provided. Further a process for electroplating is provided for producing an FePt magnetic material having especially strong coercive force and excellent properties by use of the plating solution. The plating solution contains ionic Fe, ionic Pt, and a complex agent, at a molar ratio (Fe/Pt) of the ionic Fe to the ionic Pt ranging from 0.75 to 3.
摘要翻译：提供稳定的FePt电镀溶液。此外，提供了一种用于制造具有特别强矫顽力的FePt磁性材料和通过使用电镀液的优异性能的电镀工艺。电镀溶液含有离子Fe，离子Pt和络合剂，离子Fe与离子Pt的摩尔比（Fe / Pt）为0.75至3。

64. 发明申请

US20060192309A1 Method of manufacturing porous body 有权
标题翻译：制造多孔体的方法
公开(公告)号：US20060192309A1
公开(公告)日：2006-08-31
申请号：US11409021
申请日：2006-04-24
申请人： Kazuhiko Fukutani , Tohru Den
发明人： Kazuhiko Fukutani , Tohru Den
IPC分类号： G02B1/00 , B29D11/00
CPC分类号： B01D39/2068 , B01D67/0058 , B01D69/02 , B01D71/024 , B01D71/027 , C04B35/01 , C04B35/14 , C04B35/16 , C04B38/0025 , C04B2235/3287 , C04B2235/3418 , C04B2235/65 , C23C8/02 , C23C8/10 , C25D11/02 , C25D11/045 , G02B5/207 , G11B5/855 , H01L21/0337 , Y10S977/902 , Y10T428/12528 , Y10T428/12625 , Y10T428/12674 , Y10T428/24322 , Y10T428/249967 , Y10T428/249969 , Y10T428/24997 , Y10T428/249975 , Y10T428/249978 , Y10T428/249979 , Y10T428/249987 , C04B35/10 , C04B38/04
摘要： A nanostructure is a porous body comprising a plurality of pillar-shaped pores and a region surrounding them, the region being an oxide amorphous region formed so as to contain C, Si, Ge or a material of a combination of them. Such a nanostructure can be used as a functional material in light emitting devices, optical devices and microdevices. It can also be used as a filter.
摘要翻译：纳米结构是包括多个柱状孔和围绕它们的区域的多孔体，所述区域是形成为含有C，Si，Ge或它们的组合材料的氧化物非晶区域。这种纳米结构可以用作发光器件，光学器件和微器件中的功能材料。它也可以用作过滤器。

65. 发明申请

US20060120918A1 Field-effect transistor, sensor using it, and production method thereof 失效
标题翻译：场效应晶体管，使用它的传感器及其制造方法
公开(公告)号：US20060120918A1
公开(公告)日：2006-06-08
申请号：US10530549
申请日：2004-08-04
申请人： Kazuhiko Fukutani , Takao Yonehara , Hirokatsu Miyata , Youhei Ishida , Tohru Den
发明人： Kazuhiko Fukutani , Takao Yonehara , Hirokatsu Miyata , Youhei Ishida , Tohru Den
IPC分类号： G01N33/00
CPC分类号： G01N27/4146 , Y10S438/96 , Y10T436/11 , Y10T436/114165
摘要： A sensor which has high measuring sensitivity and is excellent in response is provided by forming a porous film in a sensitive section of a field-effect transistor. It comprises a porous body, which is formed on a sensitive section (here, a gate insulating film) of the field-effect transistor and has cylindrical pores which are formed almost perpendicularly to a substrate, and the field-effect transistor. It uses as a porous film a porous film which is made of a semiconductor material whose main component (except oxygen) is silicon, germanium, or a composite of silicon and germanium, or a porous film made of an insulation material whose main component is silicon oxide, which has pores perpendicular to the substrate.
摘要翻译：通过在场效应晶体管的敏感部分中形成多孔膜来提供具有高测量灵敏度和响应性优异的传感器。它包括形成在场效应晶体管的敏感部分（这里是栅极绝缘膜）上并具有几乎垂直于基板形成的圆柱形孔的多孔体和场效应晶体管。作为多孔膜，使用由主要成分（氧除外）为硅，锗或硅与锗的复合体的半导体材料制成的多孔膜，或由主要成分为硅的绝缘材料构成的多孔膜氧化物，其具有垂直于衬底的孔。

66. 发明申请

US20060054507A1 Method for producing porous body 失效
标题翻译：多孔体的制造方法
公开(公告)号：US20060054507A1
公开(公告)日：2006-03-16
申请号：US11211527
申请日：2005-08-26
申请人： Aya Imada , Tohru Den
发明人： Aya Imada , Tohru Den
IPC分类号： H01L21/30 , C25D5/34 , C25D11/04 , C25D5/48 , C25D5/44
CPC分类号： H01L21/321 , C25D11/045 , C25D11/16 , G11B5/855 , H01L21/3063 , H01L21/3086 , Y10S438/96
摘要： A process of a porous body comprises the steps of disposing a first material in which pores are formed by anodization on a substrate to form a first layer, disposing on the first layer a second material which has a hardness lower than that of the first material and an oxide of which is dissolved by an anodization step to form a second layer, forming a concave structure on a surface of the second layer, oxidizing the second layer, and subjecting the first layer to anodization to dissolve the second layer. A magnetic recording medium or a light-emitting element comprises a first layer which is comprised of an oxide of aluminum and comprises a porous portion on a substrate, and a second layer on the first layer which has a hardness lower than that of the first layer and is comprised of a metal element, wherein the pores are packed with a magnetic substance or a light-emitting material.
摘要翻译：一种多孔体的工艺包括以下步骤：在衬底上设置通过阳极氧化形成孔的第一材料以形成第一层，在第一层上设置第二材料，该第二材料的硬度低于第一材料的硬度，其氧化物通过阳极氧化步骤溶解以形成第二层，在第二层的表面上形成凹形结构，氧化第二层，并使第一层阳极氧化以溶解第二层。磁记录介质或发光元件包括由铝的氧化物构成的第一层，并且包括在基板上的多孔部分和在第一层上的具有低于第一层的硬度的第二层并且由金属元素组成，其中孔被磁性物质或发光材料填充。

67. 发明申请

US20060022342A1 Semiconductor device and method for manufacturing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060022342A1
公开(公告)日：2006-02-02
申请号：US10986939
申请日：2004-11-15
申请人： Kazuhiko Fukutani , Tohru Den , Hirokatsu Miyata
发明人： Kazuhiko Fukutani , Tohru Den , Hirokatsu Miyata
IPC分类号： H01L23/52
CPC分类号： H01L21/76879 , G11B5/7325 , G11B5/743 , G11B5/855 , H01L21/7682 , H01L21/76838 , H01L21/76877 , H01L21/76888 , H01L23/52 , H01L23/5222 , H01L23/53295 , H01L2221/1094 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device has multi-layered interlayer insulating layers 3 formed on a semiconductor substrate 1, and wirings 4 formed in the interlayer insulating layers 3. The interlayer insulating layers 3 are composed of porous bodies having fine columnar pores and parent-material regions consisting mainly of silicon oxides surrounding the fine pores. The wirings 4 are composed of structures wherein columnar substances containing aluminum are dispersed in a base material containing silicon, or regions wherein an electrically conductive material is introduced in a portion of the porous bodies. The average diameter of the fine pores in the porous bodies is 1 nm or larger and 10 nm or smaller, and the average distance between the fine pores is 3 nm or larger and 15 nm or smaller. The fine pores in the porous bodies is formed perpendicularly, or substantially perpendicularly to the film surface on a semiconductor substrate 1.
摘要翻译：半导体器件具有形成在半导体衬底1上的多层层间绝缘层3和形成在层间绝缘层3中的布线4。层间绝缘层3由具有细柱状孔的多孔体和主要由围绕细孔的氧化硅组成的母材区构成。配线4由含有铝的柱状物质分散在含有硅的基材中的结构或其中在多孔体的一部分中导入导电材料的区域构成。多孔体的细孔的平均直径为1nm以上且10nm以下，微细孔的平均距离为3nm以上且15nm以下。多孔体中的细孔形成为垂直于或基本垂直于半导体基板1上的膜表面。

68. 发明授权

US06943488B2 Structures, electron-emitting devices, image-forming apparatus, and methods of producing them 失效
公开(公告)号：US06943488B2
公开(公告)日：2005-09-13
申请号：US09953271
申请日：2001-09-17
申请人： Nobuhiro Yasui , Tohru Den
发明人： Nobuhiro Yasui , Tohru Den
IPC分类号： H01J1/304 , H01J9/02 , H01J29/04 , H01J31/12 , H01J1/46 , H01J21/10
CPC分类号： H01J1/304 , H01J9/025
摘要： Provided are electron-emitting devices improved in durability during concentration of an electric field and thus rarely suffering chain discharge breakdown. An electron-emitting device has an electroconductive film, a layer placed on the electroconductive film and containing aluminum oxide as a main component, a pore placed in the layer containing aluminum oxide as a main component, and an electron emitter placed in the pore and containing a material of the electroconductive film, and the electron emitter is porous and is electrically connected to the electroconductive film.

69. 发明授权

US06860982B2 Zinc oxide with acicular structure, process for its production, and photoelectric conversion device 失效
标题翻译：具有针状结构的氧化锌，其生产工艺及光电转换装置
公开(公告)号：US06860982B2
公开(公告)日：2005-03-01
申请号：US10101462
申请日：2002-03-20
申请人： Hiroshi Okura , Tohru Den , Kaoru Konakahara
发明人： Hiroshi Okura , Tohru Den , Kaoru Konakahara
IPC分类号： C30B29/62 , C01G9/02 , C25B1/00 , C25D9/04 , C30B7/12 , H01G9/20 , H01L31/04 , H01L51/00 , H01M14/00
CPC分类号： H01L51/4233 , C01G9/02 , C25B1/00 , C25D9/04 , H01G9/2027 , H01G9/2054 , H01L51/0086 , Y02E10/542 , Y02E10/549 , Y02P70/521
摘要： A process for producing a zinc oxide acicular structure by growing an acicular zinc oxide on a substrate, the process comprising the steps of holding the substrate in an electrolytic solution in which at least zinc ions are present, and forming zinc oxide on the substrate by electrodeposition. The electrolytic solution contains at least one cosolute. Also disclosed is a photoelectric conversion device comprising a charge transport layer having the zinc oxide acicular structure.
摘要翻译：一种通过在基材上生长针状氧化锌来生产氧化锌针状结构体的方法，该方法包括以下步骤：将基材保持在至少存在锌离子的电解液中，并通过电沉积在基材上形成氧化锌。电解液含有至少一种共溶剂。还公开了包括具有氧化锌针状结构的电荷输送层的光电转换装置。

70. 发明申请

US20050031905A1 Magnetic recording medium and producing method thereof 审中-公开
标题翻译：磁记录介质及其制造方法
公开(公告)号：US20050031905A1
公开(公告)日：2005-02-10
申请号：US10938629
申请日：2004-09-13
申请人： Nobuhiro Yasui , Tohru Den
发明人： Nobuhiro Yasui , Tohru Den
IPC分类号： G11B5/738 , G11B5/64 , G11B5/65 , G11B5/667 , G11B5/84 , G11B5/855 , G11B5/858 , B32B5/16
CPC分类号： G11B5/855 , G11B5/858 , Y10T428/12465 , Y10T428/12667 , Y10T428/1275 , Y10T428/1291 , Y10T428/24479 , Y10T428/25 , Y10T428/256 , Y10T428/31 , Y10T428/325
摘要： To provide a magnetic recording medium with good record and reproduction characteristics. In the magnetic recording medium having an anodic oxidized alumina nanohole film filled with a magnetic substance, the anodic oxidized alumina nanohole film 13 is formed on a substrate 16 with at least one base electrode layer 15 sandwiched therebetween, the base electrode layer 15 is a film that has fcc structure and whose (111) face is oriented in the direction perpendicularly to a substrate, and the fillers 14 in the alumina nanoholes 10 have hcp structure and include hard magnetic substance whose principal component is Co and whose c-axis is perpendicular to the substrate.
摘要翻译：提供具有良好记录和再现特性的磁记录介质。在具有填充有磁性物质的阳极氧化氧化铝纳米孔膜的磁记录介质中，阳极氧化氧化铝纳米孔膜13形成在基板16上，其中夹持有至少一个基极层15，基极层15是膜具有fcc结构，并且其（111）面在垂直于基板的方向上取向，并且氧化铝纳米孔10中的填料14具有hcp结构，并且包括主成分为Co并且其c轴垂直于底物。

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