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61. 发明授权

US08568577B2 Magnetron sputtering apparatus 有权
标题翻译：磁控溅射装置
公开(公告)号：US08568577B2
公开(公告)日：2013-10-29
申请号：US12594676
申请日：2008-04-04
申请人： Tadahiro Ohmi , Tetsuya Goto , Takaaki Matsuoka
发明人： Tadahiro Ohmi , Tetsuya Goto , Takaaki Matsuoka
IPC分类号： C25B9/00 , C25B11/00 , C25B13/00 , C23C14/00
CPC分类号： C23C14/35 , H01J37/3405 , H01J37/3455
摘要： Provided is a magnetron sputtering apparatus that increases an instantaneous plasma density on a target to improve a film forming rate. The magnetron sputtering apparatus includes a substrate to be processed, a target installed to face the substrate and a rotary magnet installed at a side opposite to the substrate across the target. In the magnetron sputtering apparatus, plasma loops are formed on a target surface. The plasma loops are generated, move and disappear in an axis direction of the rotary magnet according to a rotation of the rotary magnet.
摘要翻译：提供了一种磁控溅射装置，其增加靶上的瞬时等离子体密度以提高成膜速率。磁控管溅射装置包括待加工的基板，安装成面向基板的靶材和安装在穿过靶材的基板相对侧的旋转磁体。在磁控管溅射装置中，在目标表面上形成等离子体回路。根据旋转磁体的旋转，等离子体回路产生，移动并沿旋转磁体的轴线方向消失。

62. 发明授权

US08535494B2 Rotary magnet sputtering apparatus 有权
标题翻译：旋转磁体溅射装置
公开(公告)号：US08535494B2
公开(公告)日：2013-09-17
申请号：US12920480
申请日：2009-03-02
申请人： Tadahiro Ohmi , Tetsuya Goto , Takaaki Matsuoka
发明人： Tadahiro Ohmi , Tetsuya Goto , Takaaki Matsuoka
IPC分类号： C23C14/00
CPC分类号： C23C14/35 , H01J37/3405 , H01J37/3447 , H01J37/3455 , H01J37/3497
摘要： Provided is a rotary magnet sputtering apparatus which includes a plasma shielding member and an outer wall connected to the ground and which has a series resonant circuit and a parallel resonant circuit between the plasma shielding member and the outer wall. The series resonant circuit has a very low impedance only at its resonant frequency while the parallel resonant circuit has a very high impedance only at its resonant frequency. With this configuration, the impedance between substrate RF power and the plasma shielding member becomes very high so that it is possible to suppress the generation of plasma between a substrate 10 to be processed and the plasma shielding member. Further, since a series resonant circuit is provided between a target and the ground, the RF power is efficiently supplied only to a region where the substrate passes under the target, so that a self-bias voltage is generated.
摘要翻译：提供一种旋转磁体溅射装置，其包括等离子体屏蔽构件和连接到地面的外壁，并且在等离子体屏蔽构件和外壁之间具有串联谐振电路和并联谐振电路。串联谐振电路仅在其谐振频率下具有非常低的阻抗，而并联谐振电路仅在其谐振频率处具有非常高的阻抗。利用这种配置，衬底RF功率和等离子体屏蔽构件之间的阻抗变得非常高，从而可以抑制待处理衬底10和等离子体屏蔽构件之间的等离子体的产生。此外，由于在目标和地之间提供串联谐振电路，因此仅将RF功率有效地提供给基板在目标下通过的区域，从而产生自偏压。

63. 发明授权

US08197913B2 Film forming method for a semiconductor 有权
标题翻译：半导体成膜方法
公开(公告)号：US08197913B2
公开(公告)日：2012-06-12
申请号：US12008770
申请日：2008-01-14
申请人： Takaaki Matsuoka , Kohei Kawamura
发明人： Takaaki Matsuoka , Kohei Kawamura
IPC分类号： H05H1/24
CPC分类号： H01L21/3148 , C23C16/0272 , C23C16/36 , C23C16/511 , H01L21/3185 , H01L21/76822 , H01L21/76829
摘要： The present invention is a plasma processing method for forming a film on a substrate, the method including the steps of processing a first material gas with plasma having an electron density W and an electron temperature X, processing a second material gas with plasma having an electron density Y, which is different from the electron density W, and an electron temperature Z, which is different from the electron temperature X, and forming the film on the substrate by reacting the processed first material gas and the processed second material gas.
摘要翻译：本发明是一种用于在基板上形成膜的等离子体处理方法，该方法包括以等离子体处理具有电子密度W和电子温度X的等离子体的第一原料气体的处理步骤，用具有电子的等离子体处理第二原料气体与电子密度W不同的密度Y和与电子温度X不同的电子温度Z，并且通过使被处理的第一原料气体和被处理的第二原料气体反应而在基板上形成膜。

64. 发明申请

US20110000783A1 ROTARY MAGNET SPUTTERING APPARATUS 有权
标题翻译：旋转磁铁溅射装置
公开(公告)号：US20110000783A1
公开(公告)日：2011-01-06
申请号：US12920480
申请日：2009-03-02
申请人： Tadahiro Ohmi , Tetsuya Goto , Takaaki Matsuoka
发明人： Tadahiro Ohmi , Tetsuya Goto , Takaaki Matsuoka
IPC分类号： C23C14/35
CPC分类号： C23C14/35 , H01J37/3405 , H01J37/3447 , H01J37/3455 , H01J37/3497
摘要： Provided is a rotary magnet sputtering apparatus which includes a plasma shielding member and an outer wall connected to the ground and which has a series resonant circuit and a parallel resonant circuit between the plasma shielding member and the outer wall. The series resonant circuit has a very low impedance only at its resonant frequency while the parallel resonant circuit has a very high impedance only at its resonant frequency. With this configuration, the impedance between substrate RF power and the plasma shielding member becomes very high so that it is possible to suppress the generation of plasma between a substrate 10 to be processed and the plasma shielding member. Further, since a series resonant circuit is provided between a target and the ground, the RF power is efficiently supplied only to a region where the substrate passes under the target, so that a self-bias voltage is generated.
摘要翻译：提供一种旋转磁体溅射装置，其包括等离子体屏蔽构件和连接到地面的外壁，并且在等离子体屏蔽构件和外壁之间具有串联谐振电路和并联谐振电路。串联谐振电路仅在其谐振频率下具有非常低的阻抗，而并联谐振电路仅在其谐振频率处具有非常高的阻抗。利用这种配置，衬底RF功率和等离子体屏蔽构件之间的阻抗变得非常高，从而可以抑制待处理衬底10和等离子体屏蔽构件之间的等离子体的产生。此外，由于在目标和地之间提供串联谐振电路，因此仅将RF功率有效地提供给基板在目标下通过的区域，从而产生自偏压。

65. 发明申请

US20100216300A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
标题翻译：半导体器件制造方法
公开(公告)号：US20100216300A1
公开(公告)日：2010-08-26
申请号：US12675289
申请日：2008-08-07
申请人： Hirokazu Ueda , Toshihisa Nozawa , Takaaki Matsuoka , Akinobu Teramoto , Tadahiro Ohmi
发明人： Hirokazu Ueda , Toshihisa Nozawa , Takaaki Matsuoka , Akinobu Teramoto , Tadahiro Ohmi
IPC分类号： H01L21/28
CPC分类号： H01L21/02164 , C23C16/511 , H01J37/32192 , H01L21/02274 , H01L21/31055 , H01L21/31116
摘要： A semiconductor device manufacturing method, the method including: forming a semiconductor element on a semiconductor substrate; and by using microwaves as a plasma source, forming an insulation film on the semiconductor element by performing a CVD process using microwave plasma having an electron temperature of plasma lower than 1.5 eV and an electron density of plasma higher than 1×1011 cm−3 near a surface of the semiconductor substrate.
摘要翻译：一种半导体器件制造方法，所述方法包括：在半导体衬底上形成半导体元件; 并且通过使用微波作为等离子体源，通过使用具有低于1.5eV的等离子体的电子温度和高于1×10 11 cm -3的等离子体的电子密度的微波等离子体进行CVD工艺，在半导体元件上形成绝缘膜半导体衬底的表面。

66. 发明申请

US20100178775A1 SHOWER PLATE SINTERED INTEGRALLY WITH GAS RELEASE HOLE MEMBER AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：与气体释放孔部件一体烧结的淋浴板及其制造方法
公开(公告)号：US20100178775A1
公开(公告)日：2010-07-15
申请号：US12446913
申请日：2007-09-26
申请人： Masahiro Okesaku , Tadahiro Ohmi , Tetsuya Goto , Takaaki Matsuoka , Toshihisa Nozawa , Atsutoshi Inokuchi , Kiyotaka Ishibashi
发明人： Masahiro Okesaku , Tadahiro Ohmi , Tetsuya Goto , Takaaki Matsuoka , Toshihisa Nozawa , Atsutoshi Inokuchi , Kiyotaka Ishibashi
IPC分类号： H01L21/465 , C23C16/00 , C23C16/511 , H01L21/469 , C23F1/00 , C23F1/08 , C23C16/455 , B28B1/44
CPC分类号： H01J37/3244 , C23C16/45565 , C23C16/45568 , H01J37/32192 , H01J37/32449 , H01J37/32477 , H01J37/3255
摘要： A shower plate is disposed in a processing chamber in a plasma processing apparatus, and plasma excitation gas is released into the processing chamber so as to generate plasma. A ceramic member having a plurality of gas release holes having a diameter of 20 μm to 70 μm, and/or a porous gas-communicating body having pores having a maximum diameter of not more than 75 μm communicating in the gas-communicating direction are sintered and bonded integrally with the inside of each of a plurality of vertical holes which act as release paths for the plasma excitation gas.
摘要翻译：喷淋板设置在等离子体处理装置的处理室中，等离子体激发气体释放到处理室中以产生等离子体。具有多个直径为20μm至70μm的气体释放孔的陶瓷构件和/或具有气体连通方向上连通的最大直径不大于75μm的孔的多孔气体连通体被烧结并且与用作等离子体激发气体的释放路径的多个垂直孔的每一个的内部一体地结合。

67. 发明申请

US20100170050A1 Welded Joint, Steel Deck, and Process for Producing The Steel Deck 审中-公开
标题翻译：焊接接头，钢甲板和钢板生产工艺
公开(公告)号：US20100170050A1
公开(公告)日：2010-07-08
申请号：US12664478
申请日：2008-06-09
申请人： Kotaro Inose , Takaaki Matsuoka , Junko Kambayashi , Shiro Saito
发明人： Kotaro Inose , Takaaki Matsuoka , Junko Kambayashi , Shiro Saito
IPC分类号： E01D19/12 , B23K9/04 , F16B5/08
CPC分类号： E01D19/125 , B23K9/025 , B23K9/0256 , B23K33/004 , B23K35/00 , B23K35/3053 , C22C38/40 , E01D2101/30 , Y10T403/479
摘要： A welded joint improved in fatigue strength, a steel deck using the welded joint, and a process of producing the steel deck are provided.A steel deck 3 includes a steel plate 10 having a paving surface 11 on which a pavement is placed, and stiffeners 20 welded to a lower surface 12 of the steel plate opposite the paving surface. Single bevel grooves 22 are formed at respective edges 21 of each stiffener brought into contact with the steel plate, and a weld metal 30 is deposited in each single bevel groove 22. The weld metal is a low transformation-temperature welding material whose martensitic transformation occurs in a predetermined low temperature range. The groove angle θ of the single bevel grooves 22 and welding conditions are set based on data acquired so as to obtain a fixed dilution ratio of the weld metal 30 through control of penetration rate.
摘要翻译：提供疲劳强度提高的焊接接头，使用焊接接头的钢板，以及钢板的制造方法。钢甲板3包括钢板10，该钢板10具有放置路面的铺路表面11，以及焊接到钢板的与铺路表面相对的下表面12的加强件20。在与钢板接触的每个加强件的相应边缘21处形成单个斜槽22，并且在每个单个斜槽22中沉积焊接金属30.焊接金属是其马氏体相变发生的低转变温度焊接材料在预定的低温范围内。凹槽角度和角度; 的单斜面槽22和焊接条件是基于获得的数据设定的，以便通过控制穿透速度获得焊接金属30的固定稀释比。

68. 发明申请

US20100101945A1 MAGNETRON SPUTTERING APPARATUS 有权
标题翻译： MAGNETRON喷射装置
公开(公告)号：US20100101945A1
公开(公告)日：2010-04-29
申请号：US12531515
申请日：2008-03-14
申请人： Tadahiro Ohmi , Tetsuya Goto , Takaaki Matsuoka
发明人： Tadahiro Ohmi , Tetsuya Goto , Takaaki Matsuoka
IPC分类号： C23C14/35
CPC分类号： H01J37/3455 , C23C14/35 , H01J37/32495 , H01J37/3405 , H01J37/3408 , H01J37/3441 , H01J37/345 , H01J37/3452
摘要： In a magnetron sputtering apparatus configured such that a magnetic field pattern on a target surface moves with time by means of a rotary magnet group, an object of this invention is to solve a problem that the failure rate of substrates to be processed becomes high upon plasma ignition or extinction, thereby providing a magnetron sputtering apparatus in which the failure rate of the substrates is smaller than conventional.In a magnetron sputtering apparatus of this invention, a plasma shielding member having a slit is disposed on an opposite side of a target with respect to a rotary magnet group. The distance between the plasma shielding member and a psubstrate to be processed is set shorter than the electron mean free path or the sheath width. Further, the width and the length of the slit are controlled to prevent impingement of plasma on the processing substrate. This makes it possible to reduce the failure rate of the substrates.
摘要翻译：在构造成使得目标表面上的磁场图案通过旋转磁体组随时间移动的磁控溅射装置中，本发明的目的是解决等离子体处理的基板的故障率变高的问题点火或消光，从而提供一种磁控溅射装置，其中基板的故障率小于传统的。在本发明的磁控溅射装置中，具有狭缝的等离子体屏蔽构件相对于旋转磁体组配置在靶的相反侧。等离子体屏蔽构件和待加工的基板之间的距离设定为短于电子平均自由程或护套宽度。此外，控制狭缝的宽度和长度以防止等离子体对处理基板的冲击。这使得可以降低基板的故障率。

69. 发明申请

US20100032844A1 INTERLAYER INSULATING FILM, WIRING STRUCTURE AND ELECTRONIC DEVICE AND METHODS OF MANUFACTURING THE SAME 有权
标题翻译：层间绝缘膜，接线结构和电子器件及其制造方法
公开(公告)号：US20100032844A1
公开(公告)日：2010-02-11
申请号：US12514173
申请日：2007-11-08
申请人： Tadahiro Ohmi , Seiji Yasuda , Atsutoshi Inokuchi , Takaaki Matsuoka , Kohei Kawamura
发明人： Tadahiro Ohmi , Seiji Yasuda , Atsutoshi Inokuchi , Takaaki Matsuoka , Kohei Kawamura
IPC分类号： H01L23/48
CPC分类号： H01L21/3127 , H01L21/0212 , H01L21/02274 , H01L21/02304 , H01L21/76829 , H01L21/76835 , H01L21/76843 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A wiring structure of a semiconductor device or the like includes an interlayer insulating film having a fluorocarbon film formed on an underlayer, and a conductor buried in the interlayer insulating film. The fluorocarbon film contains nitrogen and is low in dielectric constant, excellent in reproducibility and stable.
摘要翻译：半导体器件等的布线结构包括具有形成在底层上的氟碳膜的层间绝缘膜和埋在层间绝缘膜中的导体。氟碳膜含氮，介电常数低，重现性好，稳定性好。

70. 发明申请

US20100025821A1 ION IMPLANTING APPARATUS AND ION IMPLANTING METHOD 有权
标题翻译：离子植入装置和离子注入方法
公开(公告)号：US20100025821A1
公开(公告)日：2010-02-04
申请号：US12521019
申请日：2007-12-20
申请人： Tadahiro Ohmi , Tetsuya Goto , Akinobu Teramoto , Takaaki Matsuoka
发明人： Tadahiro Ohmi , Tetsuya Goto , Akinobu Teramoto , Takaaki Matsuoka
IPC分类号： H01L29/30 , C23C16/00 , H01L21/265
CPC分类号： H01L21/265 , H01J37/3222 , H01J37/32412 , H01J37/32706 , H01J2237/20 , H01J2237/26 , H01L21/26513 , H01L21/2658 , H01L29/30 , H01L29/7833
摘要： When positively charged ions are implanted into a target substrate, charge-up damage may occur on the target substrate. In order to suppress charge-up caused by secondary electrons emitted from the target substrate when positively charged ions are implanted, a conductive member is installed at a position facing the target substrate and electrically grounded with respect to a high frequency. Further, a field intensity generated in the target substrate may be reduced by controlling an RF power applied to the target substrate in pulse mode.
摘要翻译：当将带正电荷的离子注入目标衬底时，目标衬底上可能会发生充电损伤。为了抑制当注入正电荷的离子时从目标衬底发射的二次电子引起的充电，导电构件安装在面向目标衬底并相对于高频电接地的位置。此外，可以通过以脉冲模式控制施加到目标衬底的RF功率来减小在目标衬底中产生的场强。

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