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61. 发明授权

US08084860B2 Liquid crystal display device and manufacturing method therefor 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US08084860B2
公开(公告)日：2011-12-27
申请号：US12586612
申请日：2009-09-23
申请人： Junichi Koike , Hideaki Kawakami
发明人： Junichi Koike , Hideaki Kawakami
IPC分类号： H01L23/48
CPC分类号： G02F1/1368 , H01L27/124 , H01L27/3279
摘要： The present invention includes a liquid crystal display device having an oxide film having high adhesiveness to a substrate to thereby prevent oxidation of a wiring material or the like, and includes, an electrode or a terminal electrode having high conductivity, and a manufacturing method therefor. Consequently, in the present invention, a liquid crystal display device has an electrode terminal of a TFT substrate, wherein the electrode is formed on an insulator and is comprised of a conductive layer mainly consisting of copper and an oxide covering an outer part, further the oxide is a layered structure of transparent electrodes, the layered portion having ohmic contact, and the oxide mainly consists of manganese oxide.
摘要翻译：本发明包括一种液晶显示装置，其具有对基板具有高粘附性的氧化膜，从而防止布线材料等的氧化，并且包括具有高导电性的电极或端子电极及其制造方法。因此，在本发明中，液晶显示装置具有TFT基板的电极端子，其中，电极形成在绝缘体上，并且由主要由铜构成的导电层和覆盖外部的氧化物构成，另外，氧化物是透明电极的分层结构，层状部分具有欧姆接触，氧化物主要由氧化锰组成。

62. 发明申请

US20110057317A1 Contact plug structure, semiconductor device, and method for forming contact plug 失效
标题翻译：接触插塞结构，半导体器件和形成接触插塞的方法
公开(公告)号：US20110057317A1
公开(公告)日：2011-03-10
申请号：US12807528
申请日：2010-09-07
申请人： Junichi Koike , Akihiro Shibatomi , Kouji Neishi
发明人： Junichi Koike , Akihiro Shibatomi , Kouji Neishi
IPC分类号： H01L23/498 , H01L21/768
CPC分类号： H01L21/28518 , H01L21/2855 , H01L21/28556 , H01L21/76834 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L21/76864 , H01L21/76877 , H01L21/76883 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A contact plug structure formed on a contact hole of an insulating layer of a semiconductor device includes a metal silicide layer formed on a bottom part of the contact hole of the insulating layer, a manganese oxide layer formed on the metal silicide layer in the contact hole, and a buried copper formed on the manganese oxide layer which substantially fills the contact hole.
摘要翻译：形成在半导体器件的绝缘层的接触孔上的接触插塞结构包括形成在绝缘层的接触孔的底部的金属硅化物层，形成在接触孔中的金属硅化物层上的氧化锰层以及形成在氧化锰层上的掩埋铜，其基本上填充接触孔。

63. 发明申请

US20110049718A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, ELECTRONIC INSTRUMENT, SEMICONDUCTOR MANUFACTURING APPARATUS, AND STORAGE MEDIUM 有权
标题翻译：制造半导体器件的方法，半导体器件，电子仪器，半导体器件制造设备和存储介质
公开(公告)号：US20110049718A1
公开(公告)日：2011-03-03
申请号：US12864824
申请日：2009-01-20
申请人： Kenji Matsumoto , Hitoshi Itoh , Hiroshi Sato , Junichi Koike , Koji Neishi
发明人： Kenji Matsumoto , Hitoshi Itoh , Hiroshi Sato , Junichi Koike , Koji Neishi
IPC分类号： H01L23/48 , H01L21/768 , B05C13/02
CPC分类号： C23C16/40 , C23C28/00 , C23C28/322 , C23C28/345 , H01L21/28562 , H01L21/76814 , H01L21/76831 , H01L21/76844
摘要： When a barrier film is formed on an exposed surface of an interlayer insulation film on a substrate, the interlayer insulation film having a recess formed therein, and a metal wiring to be electrically connected to a metal wiring in a lower layer is formed in the recess, a barrier film having an excellent step coverage can be formed and increase of a wiring resistance can be restrained. An oxide film on a surface of the lower copper wiring exposed to a bottom surface of the interlayer insulation film is reduced or edged so as to remove oxygen on the surface of the copper wiring. Then, by supplying an organic metal compound containing manganese and containing no oxygen, generation of manganese oxide as a self-forming barrier film is selectively allowed on an area containing oxygen, such as a sidewall of the recess and a surface of the interlayer insulation film, while generation of the manganese oxide is not allowed on the surface of the copper wiring. Thereafter, copper is embedded in the recess.
摘要翻译：当在衬底上的层间绝缘膜的暴露表面上形成阻挡膜时，形成有形成在其中的凹部的层间绝缘膜和与下层中的金属布线电连接的金属布线形成在凹部可以形成具有优异的台阶覆盖的阻挡膜，并且可以抑制布线电阻的增加。暴露在层间绝缘膜的底面的下铜布线的表面上的氧化膜被还原或边缘化以去除铜布线表面上的氧。然后，通过供给含有锰并且不含氧的有机金属化合物，在包含氧的区域，例如凹部的侧壁和层间绝缘膜的表面上，选择性地允许产生作为自形成阻挡膜的氧化锰而在铜布线的表面上不允许生成氧化锰。此后，铜嵌入凹槽中。

64. 发明申请

US20100267228A1 Copper interconnection structure, semiconductor device, and method for forming copper interconnection structure 有权
标题翻译：铜互连结构，半导体器件和铜互连结构的形成方法
公开(公告)号：US20100267228A1
公开(公告)日：2010-10-21
申请号：US12803377
申请日：2010-06-24
申请人： Junichi Koike , Akihiro Shibatomi
发明人： Junichi Koike , Akihiro Shibatomi
IPC分类号： H01L21/768
CPC分类号： H01L23/5329 , H01L21/76831 , H01L21/76843 , H01L21/76864 , H01L21/76867 , H01L23/53238 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A copper interconnection structure includes an insulating layer, an interconnection and a barrier layer. The insulating layer includes silicon (element symbol: Si), carbon (element symbol: C), hydrogen (element symbol: H) and oxygen (element symbol: O). The interconnection is located on the insulating layer, and the interconnection includes copper (element symbol: Cu). The barrier layer is located between the insulating layer and the interconnection. The barrier layer includes an additional element, carbon (element symbol: C) and hydrogen (element symbol: H). The barrier layer has atomic concentrations of carbon (element symbol: C) and hydrogen (element symbol: H) maximized in a region of a thickness of the barrier layer where the atomic concentration of the additional element is maximized.
摘要翻译：铜互连结构包括绝缘层，互连和阻挡层。绝缘层包括硅（元素符号：Si），碳（元素符号：C），氢（元素符号：H）和氧（元素符号：O））。互连位于绝缘层上，互连线包括铜（元件符号：Cu）。阻挡层位于绝缘层和互连之间。阻挡层包括附加元素，碳（元素符号：C）和氢（元素符号：H）。阻挡层在附加元素的原子浓度最大化的阻挡层的厚度的区域中具有碳原子浓度（元素符号：C）和氢（元素符号：H）。

65. 发明申请

US20100112806A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR MANUFACTURING APPARATUS AND STORAGE MEDIUM 有权
标题翻译：半导体器件制造方法，半导体制造设备和存储介质
公开(公告)号：US20100112806A1
公开(公告)日：2010-05-06
申请号：US12627602
申请日：2009-11-30
申请人： Kenji MATSUMOTO , Shigetoshi HOSAKA , Junichi KOIKE , Koji NEISHI
发明人： Kenji MATSUMOTO , Shigetoshi HOSAKA , Junichi KOIKE , Koji NEISHI
IPC分类号： H01L21/768 , C25F3/30
CPC分类号： H01L23/53238 , H01L21/28556 , H01L21/76844 , H01L21/76855 , H01L21/76873 , H01L21/76883 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A seed layer is formed on a surface of an insulating film and along a recess of the insulating film, and after a copper wiring is buried in the recess, a barrier film is formed, and an excessive metal is removed from the wiring. On a surface of a copper lower layer conductive path exposed at the bottom of the recess, a natural oxide of the copper is reduced or removed. On a substrate from which the natural oxide is reduced or removed, the seed layer, composed of a self-forming barrier metal having oxidative tendency higher than that of copper or an alloy of such metal and copper, is formed. The substrate is heated after burying copper in the recess. Thus, a barrier layer is formed by oxidizing the self-forming barrier metal. An excessive portion of the self-forming barrier metal is deposited on a surface of the buried copper.
摘要翻译：在绝缘膜的表面上并沿着绝缘膜的凹部形成种子层，并且在铜布线埋入凹部中之后形成阻挡膜，并且从布线去除过量的金属。在露出在凹部底部的铜下层导电通路的表面上，铜的天然氧化物被还原或去除。在自然氧化物被还原或除去的基底上，形成由氧化倾向高于铜的自形成阻挡金属或这种金属和铜的合金构成的晶种层。在将铜埋入凹槽中之后，将衬底加热。因此，通过氧化自形成阻挡金属形成阻挡层。自形成阻挡金属的过多部分沉积在掩埋铜的表面上。

66. 发明授权

US07642552B2 Liquid crystal display device and manufacturing method therefor 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US07642552B2
公开(公告)日：2010-01-05
申请号：US11652951
申请日：2007-01-12
申请人： Junichi Koike , Hideaki Kawakami
发明人： Junichi Koike , Hideaki Kawakami
IPC分类号： H01L29/04
CPC分类号： G02F1/136286 , G02F2001/136295
摘要： A liquid crystal display device including gate wiring or a gate electrode formed on a substrate on a TFT side of the TFT liquid crystal display device, wherein the wiring or the electrode has a structure of being held between two different insulation layers or insulators, and the structure is comprised of a first layer mainly consisting of copper and a second layer consisting of an oxide covering an outer circumferential part of the first layer, further, the second layer has compositional formula of CuxMnySizO (0
摘要翻译：一种液晶显示装置，包括在TFT液晶显示装置的TFT侧的基板上形成的栅极配线或栅电极，其中布线或电极具有保持在两个不同的绝缘层或绝缘体之间的结构，结构由主要由铜构成的第一层和由覆盖第一层的外周部的氧化物构成的第二层构成，此外，第二层具有CuxMnySizO（0

67. 发明申请

US20090253260A1 Semiconductor device, its manufacturing method, and sputtering target material for use in the method 有权
标题翻译：半导体器件，其制造方法和用于该方法的溅射靶材料
公开(公告)号：US20090253260A1
公开(公告)日：2009-10-08
申请号：US12383562
申请日：2009-03-24
申请人： Junichi KOIKE
发明人： Junichi KOIKE
IPC分类号： H01L21/768
CPC分类号： H01L21/2855 , C23C14/185 , C23C14/3414 , H01L21/76831 , H01L21/76843 , H01L21/76846 , H01L21/76864 , H01L21/76867 , H01L21/76873 , H01L23/53238 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A semiconductor device enables a barrier layer to fully acquire a barriering property against the diffusion of Cu from a wiring main body and the diffusion of Si from an insulating film, enhances the adhesiveness of the barrier layer and the insulating film and excels in reliability of operation over a long period of time. In this invention, a semiconductor device provided on an insulating film with a wiring includes the insulating film containing silicon, a wiring main body formed of copper in a groove-like opening disposed in the insulating film, and a barrier layer formed between the wiring main body and the insulating film and made of an oxide containing Cu and Si and Mn.
摘要翻译：半导体器件能够使阻挡层完全获得阻止Cu从布线主体的扩散和Si从绝缘膜扩散的阻挡性，增强了阻挡层和绝缘膜的粘附性，并且操作的可靠性优异在很长一段时间内。在本发明中，设置在具有布线的绝缘膜上的半导体装置包括：包含硅的绝缘膜，设置在绝缘膜中的槽状开口中由铜形成的布线主体以及形成在布线主体之间的阻挡层主体和绝缘膜，并由含有Cu和Si和Mn的氧化物制成。

68. 发明申请

US20080170193A1 Liquid crystal display device and manufacturing method therefor 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US20080170193A1
公开(公告)日：2008-07-17
申请号：US11652951
申请日：2007-01-12
申请人： Junichi Koike , Hideaki Kawakami
发明人： Junichi Koike , Hideaki Kawakami
IPC分类号： G02F1/1333 , H01J1/62
CPC分类号： G02F1/136286 , G02F2001/136295
摘要： The present invention has been made to form an oxide film having high adhesiveness to a substrate to thereby prevent oxidation of a wiring material or the like, and also provide a liquid crystal display device provided with wiring, an electrode or a terminal electrode having high conductivity, and a manufacturing method therefor. Consequently, the present invention, a liquid crystal display device comprising gate wiring or a gate electrode formed on a substrate on a TFT side of the TFT liquid crystal display device, wherein the wiring or the electrode has a structure of being held between two different insulation layers or insulators, and the structure is comprised of a first layer mainly consisting of copper and a second layer consisting of an oxide covering an outer circumferential part of the first layer, further, the second layer has compositional formula of CuXMnYSiZO (0
摘要翻译：本发明是为了形成对基板具有高粘附性的氧化膜，从而防止布线材料等的氧化，并且还提供一种具有布线的液晶显示装置，具有高导电性的电极或端子电极，及其制造方法。因此，本发明提供一种液晶显示装置，其特征在于，在TFT液晶显示装置的TFT侧的基板上形成有栅极配线或栅电极，其中，布线或电极具有被保持在两个绝缘层层或绝缘体，并且该结构由主要由铜组成的第一层和由覆盖第一层的外周部分的氧化物组成的第二层组成，此外，第二层具有CuXMnYSiZO（0

69. 发明申请

US20070002239A1 Copper alloy and liquid-crystal display device 有权
标题翻译：铜合金和液晶显示装置
公开(公告)号：US20070002239A1
公开(公告)日：2007-01-04
申请号：US10572278
申请日：2005-08-30
申请人： Junichi Koike
发明人： Junichi Koike
IPC分类号： G02F1/1343
CPC分类号： C22C9/05 , C23C8/10 , G02F1/136286 , G02F1/1368 , G02F2001/136295 , H01L21/76834 , H01L21/76852 , H01L21/76867 , H01L27/124 , H01L29/458 , H01L29/4908
摘要： To provide a highly conductive Cu alloy which is advantageous in that an alloying element added to Cu is first reacted with oxygen contained in a gas atmosphere or solid in contact with the Cu member to form an oxide film which can prevent oxidation of Cu. The copper alloy comprises copper (Cu) containing an inevitable impurity, and an element added to the copper, wherein the added element is capable of being dissolved in the copper in an amount of 0.1 to 20 at. %, wherein the added element has an oxide formation free energy smaller than that of Cu and has a diffusion coefficient in Cu larger than the self-diffusion coefficient of Cu.
摘要翻译：为了提供高导电性Cu合金，其优点在于，添加到Cu中的合金元素首先与气体气氛中所含的氧或与Cu构件接触的固体反应，形成可防止Cu氧化的氧化膜。铜合金包含含有不可避免的杂质的铜（Cu）和添加到铜中的元素，其中添加的元素能够以0.1至20at的量溶解在铜中。％，其中添加的元素具有小于Cu的氧化物形成自由能，并且在Cu中的扩散系数大于Cu的自扩散系数。

70. 发明授权

US06620099B1 Home care system, center terminal and patient terminal 失效
标题翻译：家庭护理系统，中心终端和患者终端
公开(公告)号：US06620099B1
公开(公告)日：2003-09-16
申请号：US09714293
申请日：2000-11-17
申请人： Takaki Shimura , Satoshi Mori , Keiichi Murakami , Nagaaki Koshino , Minoru Iwata , Takehito Takano , Keiko Nakamura , Junichi Koike , Keiichi Takeda
发明人： Takaki Shimura , Satoshi Mori , Keiichi Murakami , Nagaaki Koshino , Minoru Iwata , Takehito Takano , Keiko Nakamura , Junichi Koike , Keiichi Takeda
IPC分类号： A61B500
CPC分类号： A61B5/7475 , A61B5/0006 , A61B5/0013 , A61B5/0205 , A61B2560/0295 , G06F19/00 , G16H40/67 , Y10S128/903 , Y10S128/904 , Y10S128/92
摘要： There is disclosed a home care system in which a center terminal and a patient terminal are detachably connected to each other through communication lines, such as a public telephone line, an ISDN (integrated services digital network), a CATV (cable television), a radio and the like, and further to center terminals and patient terminals which constitute such a home care system. The patient terminal has an urgency transmitter device for transmitting a predetermined urgency code to the center terminal, and the center terminal comprises an urgency receiver device for receiving, while connected to a first patient terminal, the urgency code transmitted from a second patient terminal, and an urgency alarm device for informing of the fact that the urgency code has been received.
摘要翻译：公开了一种家庭护理系统，其中中心终端和患者终端通过公用电话线，ISDN（综合业务数字网），CATV（有线电视），无线电等，并且进一步构成构成这种家庭护理系统的终端和患者终端。患者终端具有用于向中心终端发送预定的紧急代码的紧急发送装置，中心终端包括紧急接收装置，用于在连接到第一患者终端时接收从第二患者终端发送的紧急代码，以及用于通知已经接收到紧急代码的事实的紧急报警装置。

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