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61. 发明授权

US06773544B2 Magnetic barrier for plasma in chamber exhaust 有权
标题翻译：室内排气等离子体的磁屏障
公开(公告)号：US06773544B2
公开(公告)日：2004-08-10
申请号：US09775173
申请日：2001-01-31
申请人： James D. Carducci , Hamid Noorbakhsh , Evans Y. Lee , Hongqing Shan , Siamak Salimian , Paul E. Luscher , Michael D. Welch
发明人： James D. Carducci , Hamid Noorbakhsh , Evans Y. Lee , Hongqing Shan , Siamak Salimian , Paul E. Luscher , Michael D. Welch
IPC分类号： H01L21302
CPC分类号： H01J37/32834 , C23C16/4412 , H01J37/32623 , H01J37/3266
摘要： The invention concerns a plasma reactor employing a chamber enclosure including a process gas inlet and defining a plasma processing region. A workpiece support pedestal capable of supporting a workpiece at processing location faces the plasma processing region, the pedestal and enclosure being spaced from one another to define a pumping annulus therebetween having facing walls in order to permit the process of gas to be evacuated therethrough from the process region. A pair of opposing plasma confinement magnetic poles within one of the facing walls of the annulus, the opposing magnetic poles being axially displaced from one another. The magnetic poles are axially displaced below the processing location by a distance which exceeds a substantial fraction of a spacing between the facing walls of the annulus.
摘要翻译：本发明涉及一种使用包括工艺气体入口并限定等离子体处理区域的室外壳的等离子体反应器。能够在加工位置处支撑工件的工件支撑基座面对等离子体处理区域，基座和外壳彼此间隔开，以在它们之间限定其间具有面向壁的泵送环形空间，以便允许气体从其中排出过程区域。一对相对的等离子体限制磁极在环形空间的相对的壁之一内，相对的磁极彼此轴向移位。磁极在加工位置下方轴向移动一定距离，该距离超过环形面的相对壁之间的间隔的相当大的一部分。

62. 发明授权

US06716302B2 Dielectric etch chamber with expanded process window 有权
标题翻译：介质蚀刻室具有扩展的工艺窗口
公开(公告)号：US06716302B2
公开(公告)日：2004-04-06
申请号：US10253496
申请日：2002-09-24
申请人： James D Carducci , Hamid Noorbakhsh , Evans Y Lee , Bryan Y Pu , Hongching Shan , Claes Bjorkman , Siamak Salimian , Paul E Luscher , Michael D Welch
发明人： James D Carducci , Hamid Noorbakhsh , Evans Y Lee , Bryan Y Pu , Hongching Shan , Claes Bjorkman , Siamak Salimian , Paul E Luscher , Michael D Welch
IPC分类号： H05H100
CPC分类号： H01L21/6875 , H01J37/32522 , H01L21/31116 , H01L21/67069 , H01L21/6833 , H01L21/68757 , H01L21/68785 , H01L21/68792 , H01L21/76802 , H01L21/76807 , H01L21/76897 , H01L2924/3011
摘要： A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, a substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, a process gas inlet configured to deliver process gas into the processing volume, and an evacuation pump system having pumping capacity of at least 1600 liters/minute. The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into more reactive species.
摘要翻译：一种用于在低于大气压的衬底的等离子体蚀刻处理的电容耦合反应器包括限定处理容积的室主体，设置在室主体上的盖，盖是第一电极，设置在处理容积中的衬底支撑件，并且包括第二电极耦合到所述第一和第二电极中的至少一个电极的射频源，配置成将处理气体输送到所述处理容积中的处理气体入口，以及具有至少1600升/分钟的抽运能力的抽空泵系统。较大的泵送能力控制工艺气体的停留时间，以便调节分解成更具反应活性的物质的程度。

63. 发明授权

US06562189B1 Plasma reactor with a tri-magnet plasma confinement apparatus 失效
标题翻译：具有三磁体等离子体限制装置的等离子体反应器
公开(公告)号：US06562189B1
公开(公告)日：2003-05-13
申请号：US09654248
申请日：2000-08-31
申请人： Efrain Quiles , Hamid Noorbakhsh , James D Carducci
发明人： Efrain Quiles , Hamid Noorbakhsh , James D Carducci
IPC分类号： H01L2100
CPC分类号： H01J37/32871 , H01J37/32623 , H01J37/3266
摘要： A plasma reactor includes a chamber adapted to support an evacuated plasma environment, a passageway connecting the chamber to a region external of the chamber, the passageway being defined by spaced opposing passageway walls establishing a passageway distance therebetweeen, and a plasma-confining magnet assembly adjacent the passageway. The plasma-confining magnet assembly includes a short magnet adjacent one of the passageway walls and having opposing poles spaced from one another by a distance which a fraction of the gap distance, the short magnet having a magnetic orientation along one direction transverse to the direction of the passageway, and a long magnet adjacent the other one of the opposing passageway walls and generally facing the short magnet across the passageway and having opposing poles spaced from one another along a direction transverse to the passageway by a pole displacement distance which is at least nearly as great as the gap distance, the long magnet having a magnetic orientation generally opposite to that of the short magnet.
摘要翻译：等离子体反应器包括适于支撑真空等离子体环境的室，将室连接到室的外部的通道，该通道由间隔开的相对的通道壁限定，在其间建立通道距离，以及等离子体约束磁体组件相邻通道。等离子体限制磁体组件包括一个靠近一个通道壁的短磁体，并且具有彼此间隔的相对的极距离，该距离是间隙距离的一部分，短磁体沿着一个方向具有横向于所述通道和与所述相对通道壁中的另一个相邻的长磁体，并且大体上面对所述通道的所述短磁体，并且具有相反的磁极沿横向于所述通道的方向彼此间隔开极距位移距离，所述极位移距离至少接近与间隙距离一样大，长磁体具有与短磁体大致相反的磁性定向。

64. 发明授权

US06513452B2 Adjusting DC bias voltage in plasma chamber 失效
标题翻译：调整等离子体室内的直流偏置电压
公开(公告)号：US06513452B2
公开(公告)日：2003-02-04
申请号：US09841804
申请日：2001-04-24
申请人： Hongching Shan , Evans Y. Lee , Michael D. Welch , Robert W. Wu , Bryan Y. Pu , Paul E. Luscher , James D. Carducci , Richard Blume
发明人： Hongching Shan , Evans Y. Lee , Michael D. Welch , Robert W. Wu , Bryan Y. Pu , Paul E. Luscher , James D. Carducci , Richard Blume
IPC分类号： C23C1600
CPC分类号： H01J37/32834 , H01J37/32477 , H01J37/32623 , H01J37/32706
摘要： A method of adjusting the cathode DC bias in a plasma chamber for fabricating semiconductor devices. A dielectric shield is positioned between the plasma and a selected portion of the electrically grounded components of the chamber, such as the electrically grounded chamber wall. The cathode DC bias is adjusted by controlling one or more of the following parameters: (1) the surface area of the chamber wall or other grounded components which is blocked by the dielectric shield; (2) the thickness of the dielectric; (3) the gap between the shield and the chamber wall; and (4) the dielectric constant of the dielectric material. In an apparatus aspect, the invention is a plasma chamber for fabricating semiconductor devices having an exhaust baffle with a number of sinuous passages. Each passage is sufficiently long and sinuous that no portion of the plasma within the chamber can extend beyond the outlet of the passage. By blocking the plasma from reaching the exhaust pump, the exhaust baffle reduces the deposition of unwanted particles on exhaust pump components. The exhaust baffle also reduces the cathode DC bias by reducing the effective surface area of the electrically grounded chamber wall which couples RF power to the plasma.
摘要翻译：一种调整用于制造半导体器件的等离子体室中的阴极直流偏压的方法。电介质屏蔽件位于等离子体和室的电接地部件的选定部分之间，例如电接地室壁。通过控制一个或多个以下参数来调节阴极直流偏压：（1）腔室壁的表面积或由介电屏蔽件阻挡的其它接地部件; （2）电介质的厚度; （3）屏蔽和室壁之间的间隙; 和（4）介电材料的介电常数。在装置方面，本发明是用于制造半导体器件的等离子体室，其具有带有多个弯曲通道的排气挡板。每个通道足够长和弯曲，使得室内的等离子体的任何部分不能延伸超过通道的出口。通过阻止等离子体到达排气泵，排气挡板减少排气泵部件上不想要的颗粒的沉积。排气挡板还通过减少将RF功率耦合到等离子体的电接地室壁的有效表面积来减小阴极DC偏压。

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