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61. 发明申请

US20190157038A1 GAS SPRAYING APPARATUS FOR SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING APPARATUS 审中-公开
公开(公告)号：US20190157038A1
公开(公告)日：2019-05-23
申请号：US16322925
申请日：2017-08-24
申请人： JUSUNG ENGINEERING CO., LTD.
发明人： Sung Bae KIM , Cheong SON
IPC分类号： H01J37/32 , H01L21/687 , C23C16/50 , C23C16/455
摘要： The present disclosure relates to a gas distribution apparatus for substrate processing apparatuses, including: a distribution body distributing a process gas toward a substrate supporting unit supporting a substrate; a first injection hole provided in the distribution body, a process gas which is to be distributed toward the substrate supporting unit being injected through the first inject hole; and a second injection hole provided in the distribution body at a position spaced apart from the first injection hole, a process gas which is to be distributed toward the substrate supporting unit being injected through the second inject hole, and a substrate processing apparatus.

62. 发明申请

US20190136379A1 SUBSTRATE TREATING APPARATUS AND METHOD 审中-公开
公开(公告)号：US20190136379A1
公开(公告)日：2019-05-09
申请号：US16233057
申请日：2018-12-26
申请人： JUSUNG ENGINEERING CO., LTD.
发明人： Chul Joo Hwang , Jeung Hoon Han , Young Hoon Kim , Seung Hoon Seo
IPC分类号： C23C16/50 , C23C16/455 , C23C16/458 , H01L21/285 , H01L21/3205 , H01J37/32 , C23C16/509
摘要： Disclosed is an apparatus and method of processing substrate, which facilitates to improve deposition uniformity of a thin film deposited on a substrate, and to control quality of a thin film, wherein the apparatus includes a process chamber; a substrate supporter for supporting at least one of substrates, wherein the substrate supporter is provided in the bottom of the process chamber; a chamber lid confronting the substrate supporter, the chamber lid for covering an upper side of the process chamber; and a gas distributor for locally distributing activated source gas on the substrate, wherein the gas distributor locally confronting the substrate supporter is provided in the chamber lid, wherein the gas distributor forms plasma by the use of plasma formation gas, and activates the source gas by distributing the source gas to some of plasma area for formation of the plasma.

63. 发明申请

US20180033585A1 SUBSTRATE TREATMENT APPARATUS 审中-公开
公开(公告)号：US20180033585A1
公开(公告)日：2018-02-01
申请号：US15730704
申请日：2017-10-11
申请人： JUSUNG ENGINEERING CO., LTD.
发明人： Ho Chul KANG
IPC分类号： H01J37/04 , C23C16/509 , H01J37/32
CPC分类号： H01J37/04 , C23C16/5096 , H01J37/32091 , H01J37/32577
摘要： A substrate treatment apparatus includes a chamber providing a reaction region and including first and second sides facing each other, a module connected to the first side, an upper electrode in the reaction region, a substrate holder facing the upper electrode, wherein a substrate is disposed on the substrate holder, and first and second points are defined on the substrate, wherein the first point corresponds to a center of the substrate, and the second point is distant from the first point toward the first side, and a feeding line for applying an RF power, the feeding line connected to the upper electrode corresponding to the second point.

64. 发明申请

US20160313818A1 Apparatus, System and Method of Manufacturing a Touch Panel 审中-公开
标题翻译：触摸屏制造装置，系统及方法
公开(公告)号：US20160313818A1
公开(公告)日：2016-10-27
申请号：US15104518
申请日：2014-12-18
申请人： JUSUNG ENGINEERING CO., LTD.
发明人： Seon Myung KIM , Young Gi KIM , Kyung In MIN , Il Houng PARK , Chang Kyun PARK
IPC分类号： G06F3/041 , C23C16/44 , C23C16/40
CPC分类号： G06F3/041 , C23C16/40 , C23C16/44 , G06F3/044 , G06F2203/04103 , G06F2203/04111
摘要： Disclosed are an apparatus, system, and method for manufacturing a touch panel, which form a bridge with transparent first oxide having conductivity and forms second oxide, which is robust to a high temperature and high humidity, on the bridge. The method includes forming a plurality of electrode parts in a display area of a substrate, forming a light blocking layer in a non-display area of the substrate, forming an electrode line on the light blocking layer, forming a line bridge by using transparent first oxide having conductivity, and forming second oxide on the first oxide for protecting the first oxide.
摘要翻译：公开了一种用于制造触摸面板的装置，系统和方法，其形成具有导电性的透明第一氧化物的桥，并且在桥上形成对高温和高湿度坚固的第二氧化物。该方法包括在基板的显示区域中形成多个电极部分，在基板的非显示区域形成遮光层，在遮光层上形成电极线，通过使用透明的第一具有导电性的氧化物，并且在第一氧化物上形成第二氧化物以保护第一氧化物。

65. 发明申请

US20140302620A1 METHOD FOR MANUFACTURING SOLAR CELL 有权
标题翻译：制造太阳能电池的方法
公开(公告)号：US20140302620A1
公开(公告)日：2014-10-09
申请号：US14360930
申请日：2012-12-14
申请人： JUSUNG ENGINEERING CO., LTD.
发明人： Sang Du Lee , Joung Sik Kim , Joung Ho Ahn , Rae Wook Jeong , Byung Wook Jung , Beop Jong Jin
IPC分类号： H01L31/18
CPC分类号： H01L31/18 , H01L31/02363 , H01L31/068 , H01L31/1804 , Y02E10/50 , Y02E10/547 , Y02P70/521
摘要： A method for manufacturing a solar cell capable of significantly reducing the amount of wastewater generated during a wet-etching process and improving the efficiency of the solar cell. A method comprising: texturing to form an uneven structure on one semiconductor substrate surface by etching the semiconductor substrate surface with a texturing device; forming a temporary layer at an upper portion of the semiconductor substrate surface to surround a first byproduct layer formed at a predetermined region of the semiconductor substrate surface during the texturing; and doping the semiconductor substrate surface with a predetermined dopant using a doping device to form a first semiconductor layer and a second semiconductor layer disposed above the first semiconductor layer and having a different polarity than the first semiconductor layer. The first byproduct layer and the temporary layer are simultaneously removed.
摘要翻译：一种太阳能电池的制造方法，其能够显着地减少在湿式蚀刻工序中产生的废水量，提高太阳能电池的效率。一种方法，包括：通过用纹理装置蚀刻所述半导体衬底表面，在一个半导体衬底表面上形成纹理以形成不均匀结构; 在所述半导体衬底表面的上部形成临时层，以在所述纹理化期间包围形成在所述半导体衬底表面的预定区域处的第一副产物层; 以及使用掺杂装置用预定掺杂剂掺杂所述半导体衬底表面，以形成设置在所述第一半导体层上方且具有与所述第一半导体层不同的极性的第一半导体层和第二半导体层。同时去除第一副产物层和临时层。

66. 发明申请

US20130255575A1 PLASMA GENERATOR 审中-公开
标题翻译：等离子发生器
公开(公告)号：US20130255575A1
公开(公告)日：2013-10-03
申请号：US13905872
申请日：2013-05-30
申请人： Jusung Engineering Co., Ltd. , Korea Advanced Institute of Science and Technology
发明人： Hong-Young CHANG , Sang-Hun SEO , Jung Hwan IN , Hun-Su LEE , Yun-Seong LEE
IPC分类号： C23C16/44
CPC分类号： C23C16/44 , H01J37/32532 , H01J37/32568 , H01J37/32577 , H05H2001/2412
摘要： Provided is a plasma generator which includes a vacuum chamber, a plurality of ground electrodes disposed inside the vacuum container and extending in parallel to each other, a plurality of power electrodes disposed between the ground electrodes inside the vacuum container, and a plurality of electrodes dielectrics disposed between the power electrodes and the ground electrodes inside the vacuum container. The power electrodes are connected to an RF power source.
摘要翻译：提供了一种等离子体发生器，其包括真空室，设置在真空容器内并且彼此平行延伸的多个接地电极，设置在真空容器内的接地电极之间的多个电力电极和多个电极电介质设置在电力电极和真空容器内的接地电极之间。电源电极连接到RF电源。

67. 发明申请

US20130025661A1 Thin Film Type Solar Cell and Method for Manufacturing the Same 审中-公开
标题翻译：薄膜型太阳能电池及其制造方法
公开(公告)号：US20130025661A1
公开(公告)日：2013-01-31
申请号：US13632809
申请日：2012-10-01
申请人： JUSUNG ENGINEERING CO., LTD.
发明人： Yong Woo SHIN , Won Hyun KIM , Dae Yup NA , Hyun Jun CHO , Dong Woo KANG , Doo Young KIM , Hyun Kyo SHIN , Cheol Hoon YANG
IPC分类号： H01L31/06 , H01L31/075 , H01L31/0224
CPC分类号： H01L31/022425 , H01L31/046 , H01L31/0468 , Y02B10/10 , Y02E10/50
摘要： A thin film type solar cell and a method for manufacturing the same is disclosed, which is capable of providing a wide light-transmission area without lowering cell efficiency and increasing processing time, so that the solar cell can be used as a substitute for a glass window in a building. The thin film type solar cell generally comprises a substrate; a plurality of front electrodes at fixed intervals on the substrate; a plurality of semiconductor layers at fixed intervals with a contact portion or separating channel interposed in-between, the plurality of semiconductor layers on the plurality of front electrodes; and a plurality of rear electrodes at fixed intervals by the each separating channel interposed in-between, the each rear electrode being electrically connected with the each front electrode; wherein the each rear electrode is patterned in such a way that a light-transmitting portion is included in a predetermined portion of the rear electrode.
摘要翻译：公开了一种薄膜型太阳能电池及其制造方法，其能够提供宽的透光面积而不降低电池效率和增加处理时间，使得太阳能电池可用作玻璃的替代品窗户在建筑物。薄膜型太阳能电池通常包括基板; 在所述基板上以固定间隔的多个前电极; 以固定间隔的多个半导体层，其中插入有位于其间的接触部分或分离通道，所述多个前电极上的多个半导体层; 以及通过插入其间的每个分离通道以固定间隔的多个后电极，每个后电极与每个前电极电连接; 其中每个后电极被图案化，使得在后电极的预定部分中包括光透射部分。

68. 发明申请

US20040240983A1 Transfer chamber for cluster system 有权
标题翻译：集群系统转移室
公开(公告)号：US20040240983A1
公开(公告)日：2004-12-02
申请号：US10859893
申请日：2004-06-02
申请人： Jusung Engineering Co., Ltd.
发明人： Geun-Ha Jang
IPC分类号： B65G049/07
CPC分类号： H01L21/67196 , Y10T29/41
摘要： A transfer chamber for a cluster system includes a first body, a second body attached at one side of the first body, and a cover combined with an upper portion of the first body. The transfer chamber further includes a third body at another side of the first body, wherein the third body has the same shape as the second body.
摘要翻译：用于集束系统的传送室包括第一主体，附接在第一主体的一侧的第二主体以及与第一主体的上部结合的盖。传送室还包括在第一主体的另一侧的第三主体，其中第三主体具有与第二主体相同的形状。

69. 发明申请

US20040121609A1 Method for forming silicon epitaxial layer 审中-公开
标题翻译：硅外延层的形成方法
公开(公告)号：US20040121609A1
公开(公告)日：2004-06-24
申请号：US10724187
申请日：2003-12-01
申请人： JUSUNG ENGINEERING CO., LTD.
发明人： Tae Wan Lee , Kyu Jin Choi , Jung Hoon Sun , Sung Jin Whoang , Bok Won Cho
IPC分类号： H01L021/302 , H01L021/461
CPC分类号： H01L21/02046 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/02661 , H01L21/3065
摘要： Disclosed herein is a method for forming a silicon epitaxial layer. The method comprises the steps of cleaning the surface of a silicon substrate having dopant of predetermined concentration doped therein with mixed plasma comprising an etching gas containing fluorine and hydrogen or deuterium, and forming a silicon epitaxial layer on the cleaned surface of the silicon substrate. The doped concentration of the silicon substrate is preferably 1018 to 1021 atoms/cm3. According to the present invention, a new preliminary cleaning step is adopted, whereby a silicon epitaxial layer of good quality is formed on a highly doped silicon substrate at a low temperature of 700null C. or less.
摘要翻译：本文公开了一种形成硅外延层的方法。该方法包括以下步骤：在其中掺杂有预定浓度的掺杂剂的硅衬底的表面清洗混合等离子体，其中包括含氟和氢或氘的蚀刻气体，并在硅衬底的清洁表面上形成硅外延层。硅衬底的掺杂浓度优选为10 18至10 21个原子/ cm 3。根据本发明，采用新的预清洗步骤，由此在700℃或更低的低温下，在高掺杂硅衬底上形成质量好的硅外延层。

70. 发明申请

US20030085661A1 Plasma apparatus 有权
公开(公告)号：US20030085661A1
公开(公告)日：2003-05-08
申请号：US10282305
申请日：2002-10-28
申请人： Jusung Engineering Co., Ltd.
发明人： Tae-Kyun Kwon
IPC分类号： H05B031/26
CPC分类号： H01J37/32082 , H01J37/32577 , H05H1/46
摘要： A plasma apparatus is disclosed, wherein an RF feed through having a stick type not a wire type is used. Accordingly, even if heat is generated at the RF feed through by an applied RF, heat is more easily emitted outwardly than at the conventional wire type. According to this, an impedance of the RF feed through is least changed by heat, thereby having a reliability of a process. Also, since the RF feed through is formed at an upper portion of the plasma chamber not at a lateral side, the RF feed through unit including a cooling jacket and an air cooling jacket is easily engaged to the plasma apparatus. In addition, since an outer upper portion of the bell jar is flat, when the RF feed through penetrates an upper center of the bell jar, an area of a contacted part of the RF feed through with the bell jar becomes minimum, thereby having less influence by a bell jar heater.

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