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61. 发明申请

US20050258487A1 TFT, method of manufacturing the TFT, flat panel display having the TFT, and method of manufacturing the flat panel display 有权
标题翻译： TFT，制造TFT的方法，具有TFT的平板显示器以及制造平板显示器的方法
公开(公告)号：US20050258487A1
公开(公告)日：2005-11-24
申请号：US11131233
申请日：2005-05-18
申请人： Min-Chul Suh , Nam-Choul Yang , Jae-Bon Koo , Tae-Min Kang , Hye-dong Kim
发明人： Min-Chul Suh , Nam-Choul Yang , Jae-Bon Koo , Tae-Min Kang , Hye-dong Kim
IPC分类号： H01L51/05 , H01L21/304 , H01L21/336 , H01L21/762 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786 , H01L51/40
CPC分类号： H01L29/66742 , H01L21/76264 , H01L27/1222 , H01L27/1248 , H01L29/78606 , H01L29/78681
摘要： A thin film transistor (TFT) including a semiconductor film that may be simply patterned, a method of manufacturing the TFT, a flat panel display (FPD) including the TFT, and a method of manufacturing the FPD. The TFT includes a gate electrode, source and drain electrodes electrically insulated from the gate electrode, and a semiconductor film electrically insulated from the gate electrode and including source and drain regions coupled to the source and drain electrodes, respectively, and a channel region coupling the source and drain regions. The semiconductor film has a groove that isolates the channel region from an adjacent TFT.
摘要翻译：一种薄膜晶体管（TFT），其包括可以被简单地构图的半导体膜，TFT的制造方法，包括TFT的平板显示器（FPD）以及FPD的制造方法。 TFT包括栅电极，与栅电极电绝缘的源电极和漏电极以及与栅电极电绝缘并且分别耦合到源电极和漏电极的源极和漏极区域的半导体膜以及耦合到栅极电极的沟道区域源极和漏极区域。半导体膜具有将沟道区域与相邻TFT隔离的沟槽。

62. 发明授权

US06387738B2 Method for manufacturing a thin film transistor 有权
标题翻译：薄膜晶体管的制造方法
公开(公告)号：US06387738B2
公开(公告)日：2002-05-14
申请号：US09731756
申请日：2000-12-08
申请人： Hye-dong Kim
发明人： Hye-dong Kim
IPC分类号： H01L2100
CPC分类号： H01L29/66757 , H01L29/458 , H01L29/78621
摘要： There is provided a method for manufacturing a thin film transistor. The present invention can reduce the number of process steps for manufacturing a thin film transistor, and also can lower contact resistance between layers. The manufacturing method deposits a buffer layer and an active layer on a substrate. The active layer is crystalized and patterned. Then, an insulating layer is deposited on an upper surface of the active layer and patterned to form a gate electrode on an upper surface of the insulating layer by a photolithography process using a photoresist layer. The photoresist layer covering the gate electrode is reflowed by heating and covers the edges of the gate electrode. A contact layer is formed by doping in high concentration at both edges of the active layer by plasma ion-injecting using the reflowed photoresist layer as a mask. After removing the photoresist layer, an LDD region is formed at the active layer by ion-injecting in low concentration. Then, an interlayer insulating layer is deposited on an upper surface of the gate electrode, exposing the contact layer by forming a contact hole at a predetermined portion of the interlayer insulating layer. A three-layered thin film of a first metal layer, an ITO layer and a second metal layer is sequentially deposited and patterned to form a source electrode, a drain electrode and a pixel electrode. A data line is formed on the second metal layer of the source electrode by an electroplating method.
摘要翻译：提供了制造薄膜晶体管的方法。本发明可以减少用于制造薄膜晶体管的工艺步骤的数量，并且还可以降低层之间的接触电阻。制造方法在衬底上沉积缓冲层和活性层。有源层结晶化并图案化。然后，在有源层的上表面上沉积绝缘层，并通过使用光致抗蚀剂层的光刻工艺将其图案化以在绝缘层的上表面上形成栅电极。覆盖栅电极的光致抗蚀剂层通过加热回流并覆盖栅电极的边缘。通过使用回流光致抗蚀剂层作为掩模的等离子体离子注入，在有源层的两个边缘以高浓度掺杂形成接触层。在去除光致抗蚀剂层之后，通过离子注入低浓度在活性层处形成LDD区。然后，在栅电极的上表面上淀积层间绝缘层，在层间绝缘层的规定部分形成接触孔，使接触层露出。顺序地沉积和图案化第一金属层，ITO层和第二金属层的三层薄膜，以形成源电极，漏电极和像素电极。通过电镀方法在源电极的第二金属层上形成数据线。

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