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    • 61. 发明授权
    • Nickel-metal hydride battery
    • 镍氢电池
    • US08119284B2
    • 2012-02-21
    • US11964620
    • 2007-12-26
    • Shinichiro ItoHiroyuki Sakamoto
    • Shinichiro ItoHiroyuki Sakamoto
    • H01M4/00
    • H01M4/38
    • A nickel-metal hydride battery that reduces the amount of cobalt and improves battery durability. The battery includes a negative electrode formed from an AB5 hydrogen-absorbing alloy. The alloy includes an A element composed of Misch metal and a B element mainly composed of nickel. The nickel in the B element is partially replaced by at least one further element including cobalt. The alloy is formed to satisfy at least the conditions of a mol ratio of the B element relative to the A element being 5.25 or greater, the amount of cobalt for 1 mol of the A element being 0.15 mol to 0.25 mol, and the alloy having a half-width ratio, which indicates the ratio of a peak half-width of a (002) plane relative to a peak half-width of a (200) plane, of 1.3 to 1.7.
    • 一种镍金属氢化物电池,其减少钴的量并改善电池耐久性。 电池包括由AB5吸氢合金形成的负极。 该合金包括由Misch金属构成的A元素和主要由镍构成的B元素。 B元素中的镍部分地被至少一种包括钴的元素替代。 该合金的形成至少满足B元素相对于A元素的摩尔比为5.25以上的条件,A元素的1摩尔的量为0.15摩尔〜0.25摩尔,合金具有 表示(002)面的峰值半宽相对于(200)面的峰值半峰宽的比例为1.3〜1.7的半宽比。
    • 63. 发明申请
    • MEMORY DEVICE, ELECTRONIC DEVICE, AND HOST APPARATUS
    • 存储装置,电子装置和主机装置
    • US20100174866A1
    • 2010-07-08
    • US12663531
    • 2008-06-19
    • Akihisa FujimotoHiroyuki Sakamoto
    • Akihisa FujimotoHiroyuki Sakamoto
    • G06F12/00G06F12/02G06F13/40G06F15/177
    • G06F12/0246G06F9/4401
    • A memory device (11) includes a semiconductor memory (11c) and a controller (11a). The semiconductor memory (11c) includes a first storage area (11c1) and a second storage area (11c2). The controller (11a) controls the semiconductor m (11c). The memory device (11) is capable of having a first state which is accessible to the first storage area (11c1) and a sec state in which data is readable from the second storage area (11c2). The controller (11a) is configured to recognize a first command, a second command, and a third command. The first command transfers the memory device (11) to the first state after the memory device is turned on. The second command transfers the memory device (11) from the first state to the second state. The third command transfers the memory device (11) to the second state without passing through the first state after the memory device is turned on.
    • 存储器件(11)包括半导体存储器(11c)和控制器(11a)。 半导体存储器(11c)包括第一存储区域(11c1)和第二存储区域(11c2)。 控制器(11a)控制半导体m(11c)。 存储装置(11)能够具有第一存储区域(11c1)可访问的第一状态和数据可从第二存储区域(11c2)读取的秒状态。 控制器(11a)被配置为识别第一命令,第二命令和第三命令。 在存储器件接通之后,第一命令将存储器件(11)传送到第一状态。 第二命令将存储器件(11)从第一状态传送到第二状态。 在存储器件接通之后,第三命令将存储器件(11)传送到第二状态而不经过第一状态。