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    • 67. 发明公开
    • METHOD AND APPARATUS IN NETWORK ADAPTER FOR AUTOMATIC RETRANSMISSION OF PACKETS
    • 方法和设备在网络适配器包自动重发
    • EP0811285A1
    • 1997-12-10
    • EP96942888.0
    • 1996-12-04
    • DIGITAL EQUIPMENT CORPORATION
    • PAUL, GideonWERTHIMER, AviadBEN-MICHAEL, SimoniHAWE, William
    • H04L12
    • H04L12/40032H04L12/40013H04L12/413
    • A method implemented by a computer network adapter for automatic retransmission of a packet whose transmission was interrupted by the occurrence of a number of excessive collisions entails the steps of (a) if the number of excessive collisions is below an excessive collision limit, stopping transmission and substantially immediately initiating transmission of the packet again, and (b) if the number of excessive collisions exceeds an excessive collision limit, stopping transmission and discarding the packet. The method also serves for automatic retransmission of any packet involved in an unsuccessful transmission attempt due to transmit buffer underflow conditions and entails the steps of (a) stopping the transmission; and (b) retrying another transmission of the packet for up to a predetermined number of attempts with an increased transmit threshold. The transmit threshold is the number of bytes of data of the packet involved in the transmission that are stored in the transmit buffer prior to start of transmission. Preferably, for the initial transmission attempt, the adapter requires only a small number of bytes of the packet to be stored in the transmit buffer. After occurrence of a buffer underflow condition, the adapter attempts a retry in accordance with the algorithm only after a substantially larger portion of the packet has entered the transmit buffer for transmission. If any retry succeeds, the adapter need not issue an interrupt.
    • 69. 发明公开
    • Method of forming micro-trench isolation regions in the fabrication of semiconductor devices
    • 一种用于制造微沟槽的隔离区域用于半导体器件的过程。
    • EP0632495A3
    • 1997-11-05
    • EP94304725.8
    • 1994-06-28
    • DIGITAL EQUIPMENT CORPORATION
    • Swan,Stephen WilliamPicciolo,Ellen Grant
    • H01L21/76
    • H01L21/76232Y10S148/05
    • A method of forming micro-trench isolation regions with a separation of 0.20µm to 0.35µm in the fabrication of semiconductor devices involves forming an silicon dioxide layer on select locations of a semiconductor substrate and depositing a polysilicon layer onto the silicon dioxide layer. A layer of photoresist is then deposited over select areas of the polysilicon layer and patterned to form micro-trench isolation regions of widths between about 0.2µm to about 0.5µm and aspect ratio of between about 2:1 to about 7:1. Thereafter, the isolation regions are etched for a time and pressure sufficient to form micro-trenches in the substrate surface. The micro-trenches will generally have a width ranging from about 1000Å to about 3500Å and depth ranging from about 500Å to about 5000Å. The layer of photoresist is then removed to expose the polysilicon layer and a channel stop implant is deposited and aligned with the micro-trenches. A thermal silicon dioxide layer is formed in the micro-trenches and an undoped silicon dioxide layer is deposited onto the polysilicon layer to fill the micro-trenches. A planar silicon dioxide layer is then deposited onto the undoped silicon dioxide layer and the undoped and planar silicon dioxide layers are then etched back to expose the polysilicon layer. After etchback, the polysilicon layer is stripped to provide the micro-trench isolation regions.