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51. 发明授权

US3836989A Bulk semiconductor device 失效
标题翻译：大容量半导体器件
公开(公告)号：US3836989A
公开(公告)日：1974-09-17
申请号：US33273073
申请日：1973-02-15
申请人： AGENCY IND SCIENCE TECHN
发明人： TOMIZAWA K , MORISUE M , KATAOKA S , HASHIZUME N , KOMAMIYA Y
IPC分类号： G11C21/00 , H01L47/02 , H03F3/55 , H03K19/08 , H03K17/72
CPC分类号： H03K19/08 , G11C21/00 , H01L47/02 , H03F3/55
摘要： Disclosed is a semiconductor device comprising at least two semiconductor elements integrally connected by an insulator, each semiconductor showing negative differential conductivity under the influence of a high electric field. A high electric field domain or space charges which are generated in one of the semiconductor elements can be transferred to the other element by directly affecting the other element via an insulator.
摘要翻译：公开了一种半导体器件，其包括由绝缘体整体连接的至少两个半导体元件，每个半导体在高电场的影响下显示出负的微分电导率。在半导体元件之一中产生的高电场域或空间电荷可以通过绝缘体直接影响另一元件而被传递到另一元件。

52. 发明授权

US3544914A Semiconductor high frequency amplifier device 失效
标题翻译：半导体高频放大器器件
公开(公告)号：US3544914A
公开(公告)日：1970-12-01
申请号：US3544914D
申请日：1969-03-11
申请人： NIPPON ELECTRIC CO
发明人： SUGA MICHIHISA
IPC分类号： H03F3/55 , H03F3/04
CPC分类号： H03F3/55

53. 发明授权

US3513403A Integrated semiconductor structure with frequency selective transmission line sections 失效
标题翻译：具有频率选择性传输线段的集成半导体结构
公开(公告)号：US3513403A
公开(公告)日：1970-05-19
申请号：US3513403D
申请日：1966-06-28
申请人： RCA CORP
发明人： CHANG KERN K N
IPC分类号： H01L27/00 , H03F3/55 , H03F7/00 , H03K3/26
CPC分类号： H03F3/55 , H01L27/00

54. 发明授权

US3230390A Solid state microwave amplifier with power source of same frequency as input 失效
标题翻译：具有与输入频率相同的电源的固态微波放大器
公开(公告)号：US3230390A
公开(公告)日：1966-01-18
申请号：US20089762
申请日：1962-06-07
申请人： FRED STERZER
发明人： FRED STERZER
IPC分类号： H03F3/55
CPC分类号： H03F3/55

55. 发明授权

US11881827B2 Traveling-wave transimpedance amplifier 有权
公开(公告)号：US11881827B2
公开(公告)日：2024-01-23
申请号：US17644301
申请日：2021-12-14
申请人： CREDO TECHNOLOGY GROUP LIMITED
发明人： Yida Duan
IPC分类号： H03F3/55 , H03F3/60 , H03F1/42 , H03F3/45
CPC分类号： H03F3/55 , H03F1/42 , H03F3/45076 , H03F2200/36
摘要： One illustrative high bandwidth transimpedance amplifier includes a distributed amplifier having multiple transistors that receive a propagating input signal at respective nodes of an input signal line and drive corresponding nodes of an amplified signal line that propagates an amplified signal to an output voltage buffer. A feedback impedance couples the output voltage to a feedback node in the distributed amplifier, making the output voltage proportional to the input signal's current. An illustrative method includes: propagating an input signal current along an input signal line of a distributed amplifier, the distributed amplifier responsively propagating an amplified signal along an amplified signal line; buffering the amplified signal from a final node of the amplified signal line to produce an output voltage signal; and using the output voltage signal to draw the input signal current from a final node of the input signal line via a feedback impedance.

56. 发明申请

US20170117860A1 AMPLIFIER 有权
公开(公告)号：US20170117860A1
公开(公告)日：2017-04-27
申请号：US15299288
申请日：2016-10-20
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Naoki ITABASHI , Keiji TANAKA
IPC分类号： H03F3/55 , H03F1/48 , H03F1/56 , H03F3/45 , H03F3/60
CPC分类号： H03F3/55 , H03F1/48 , H03F1/565 , H03F3/4508 , H03F3/45475 , H03F3/602 , H03F3/605 , H03F2200/387 , H03F2200/451
摘要： An amplifier including a pre-amplifier, an impedance converter, and a traveling wave amplifier (TWA) is disclosed. The pre-amplifier receives a differential input signal and has a pair of first output nodes that output a first differential signal by amplifying the differential input signal. Each first output node has first output impedance. The impedance converter includes a pair of first input nodes that receive the first differential signal and a pair of second output nodes that output a second differential signal. Each first input node has first input impedance greater than the first output impedance. The impedance converter converts the first differential signal into the second differential signal. Each second output node has second output impedance smaller than the first output impedance. The TWA includes a pair of transmission lines connected to the pair of the second output nodes. Each transmission line has characteristic impedance matching with the second output impedance.

57. 发明申请

US20140347123A1 AMPLIFIER 有权
标题翻译：放大器
公开(公告)号：US20140347123A1
公开(公告)日：2014-11-27
申请号：US14287282
申请日：2014-05-27
申请人： Fraunhofer-Gesellschaft zur Forderung der angewandten Forschung e.V.
发明人： Philippe Dennler
IPC分类号： H03F3/55 , H03F3/21 , H03F3/19
CPC分类号： H03F3/55 , H03F1/42 , H03F3/19 , H03F3/195 , H03F3/211 , H03F3/245 , H03F3/602 , H03F3/68 , H03F2200/222 , H03F2200/318 , H03F2200/387 , H03F2200/39 , H03F2200/411 , H03F2200/423
摘要： An amplifier (1) is provided, in particular, wideband amplifier with an input (4) and an output (5) comprising a first amplifier stage (2) and a second amplifier stage (3), wherein the first amplifier stage (2) has an active power splitter with at least one injection point, wherein this injection point corresponds to the input (4) of the amplifier, and at least two discharge points (9a, 9b), wherein this active power splitter is formed according to a traveling wave amplifier principle and the second amplifier stage (3) has at least two injection points (11a, 11b) and at least one discharge point, wherein this discharge point corresponds to the output (5) of the amplifier and is formed as a power coupler. It is essential that the second amplifier stage (3) is formed as a power coupler, wherein this power coupler is formed according to the principle of a reactively matched amplifier.
摘要翻译：放大器（1）特别地提供具有输入（4）的宽带放大器和包括第一放大级（2）和第二放大级（3）的输出（5），其中第一放大级（2）具有至少一个注入点的有功功率分配器，其中该注入点对应于放大器的输入端（4）和至少两个放电点（9a，9b），其中该有源功率分配器根据行进波长放大器原理和第二放大器级（3）具有至少两个注入点（11a，11b）和至少一个放电点，其中该放电点对应于放大器的输出（5）并且形成为功率耦合器。重要的是，第二放大器级（3）形成为功率耦合器，其中根据反应匹配放大器的原理形成该功率耦合器。

58. 发明申请

US20130135046A1 SWITCHING CIRCUIT AND ENVELOPE SIGNAL AMPLIFIER 有权
标题翻译：切换电路和信号放大器
公开(公告)号：US20130135046A1
公开(公告)日：2013-05-30
申请号：US13662083
申请日：2012-10-26
申请人： Sumitomo Electric Industries, Ltd. , National University Corporation Toyohashi Univers
发明人： Satoshi Hatsukawa , Kazuhiro Fujikawa , Takashi Tsuno , Nobuo Shiga , Takashi Ohira , Kazuyuki Wada , Tuya Wuren , Kotaro Tanimura
IPC分类号： H03K17/687
CPC分类号： H03K17/687 , H02M1/08 , H02M3/158 , H03F1/0211 , H03F1/0222 , H03F3/16 , H03F3/217 , H03F3/45 , H03F3/55 , H03F3/607 , H03F2200/102 , H03F2200/351 , Y10T307/747
摘要： A switching circuit 33 comprises a connection circuit cascade-connecting control terminals for controlling switching of n number of transistors M1-Mn via n−1 number of coils L1 respectively (n is an integer equal to or more than 2; and coils L3 respectively connected between one end of each of the transistors M1-Mn and other end of a coil L2, one end of the coil L2 being electrically connected to a DC power source. The transistors M1-Mn is sequentially switched with PWM signals inputted to an input terminal of the connection circuit. The switching circuit 33 further comprises a transistor M0 inserted at the one end or the other end of the coil L2 in cascade-connection.
摘要翻译：开关电路33包括连接电路级联连接控制端子，用于分别经由n-1个线圈L1（n为等于或等于2的整数）控制n个晶体管M1-Mn的切换;以及分别连接的线圈L3 在每个晶体管M1-Mn的一端和线圈L2的另一端之间，线圈L2的一端电连接到直流电源，晶体管M1-Mn依次切换输入到输入端的PWM信号开关电路33还包括以串联方式插入线圈L2的一端或另一端的晶体管M0。

59. 发明授权

US4328466A Electron bombarded semiconductor device with doubly-distributed deflection means 失效
标题翻译：具有双分布偏转装置的电子轰击半导体器件
公开(公告)号：US4328466A
公开(公告)日：1982-05-04
申请号：US269504
申请日：1972-07-03
申请人： Carroll B. Norris, Jr. , Aris Silzars , David J. Bates
发明人： Carroll B. Norris, Jr. , Aris Silzars , David J. Bates
IPC分类号： H01J23/26 , H03F3/55 , H03F3/08
CPC分类号： H01J23/26 , H03F3/55
摘要： An electron bombarded semiconductor amplifier including an elongated envelope having an electron gun projecting a sheet electron beam towards a distributed element semiconductor target which propagates an output signal including a single extended area semiconductor diode or a plurality of series-connected semiconductor diodes which are reverse biased and a doubly-distributed deflection means adapted to receive an input signal and cooperate with said sheet electron beam to deflect the beam in accordance with an input signal in synchronism with electron beam velocity and target signal propagation velocity to strike the target and generate an amplifier output signal.
摘要翻译：一种电子轰击的半导体放大器，包括具有电子枪的细长外壳，该电子枪将片状电子束投射到分布式元件半导体靶，该分布式元件半导体靶传播包括反向偏置的单个扩展区半导体二极管或多个串联连接的半导体二极管的输出信号，双分布偏转装置，适于接收输入信号并与所述薄片电子束配合，以根据与电子束速度和目标信号传播速度同步的输入信号来偏转光束以撞击目标并产生放大器输出信号。

60. 发明授权

US4249149A Ultra high-frequency circuit with resonant cavity equipped with pairs of peripheral diodes 失效
标题翻译：具有谐振腔的超高频电路配有成对的外围二极管
公开(公告)号：US4249149A
公开(公告)日：1981-02-03
申请号：US34735
申请日：1979-04-30
申请人： Felix Diamand , Guy Bourrabier , Robert Antoine
发明人： Felix Diamand , Guy Bourrabier , Robert Antoine
IPC分类号： H01P1/00 , H01P7/06 , H03B7/14 , H03B9/12 , H03F3/10 , H03F3/55 , H01P7/04
CPC分类号： H01P7/06 , H01P1/00 , H03B7/146 , H03B9/12 , H03F3/10 , H03F3/55
摘要： A circuit capable of providing the negative resistance heart of oscillators or amplifiers in the 5-20 Gc/s frequency band, comprising a central resonant cavity and one or several peripheral exciting chambers, each containing a push-pull arrangement of two diodes for example three pairs of diodes in chambers arranged at 120.degree. from one another on a circle concentric to the central cavity. The diodes are located at the bottoms of cylindrical exciting chambers communicating with the central chamber through holes situated at the center of each push-pull arrangement. Each pair of diodes is maintained and polarized by a metallic bar which plays, with the walls of the exciting chamber, the role of an impedance transformer between the diodes and the central cavity. The metallic bar is maintained by a polarization rod penetrating the chamber through an insulating passage.
摘要翻译：一种能够提供5-20Gc / s频带中的振荡器或放大器的负电阻心脏的电路，包括中央谐振腔和一个或多个外围激励腔，每个包含两个二极管的推挽布置，例如三成对的二极管在室内以与中心腔同心的圆圈上彼此成120度布置。二极管位于与位于每个推挽装置中心的中心室通孔的圆柱形激励室的底部。每对二极管被金属棒保持和极化，金属棒与激励腔的壁一起起作用，在二极管和中心腔之间形成阻抗变换器。金属棒由穿过绝缘通道的偏振杆保持。

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