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    • 52. 发明授权
    • Multi-step process to incorporate grain growth inhibitors in WC-Co
composite
    • 在WC-Co复合材料中纳入晶粒生长抑制剂的多步法
    • US5885372A
    • 1999-03-23
    • US733233
    • 1996-10-02
    • Purnesh Seegopaul
    • Purnesh Seegopaul
    • B23B27/14B22F1/02B22F9/08B22F9/22C01B32/949C22C1/05C22C29/08C23C8/20
    • C22C1/056C22C29/08B22F2003/1032Y10S977/891
    • Grain growth inhibitors including vanadium carbide, chromium carbide, tantalum carbide, and niobium carbide are incorporated into a cobalt/tungsten carbide matrix during the formation of the cobalt/tungsten carbide matrix. A precursor powder is formed by combining in solution a cobalt composition, a tungsten composition and a grain growth inhibiting metal composition, which is then spray dried. The precursor compound is then carburized in carbon monoxide and carbon dioxide to form cobalt/tungsten carbide matrix. This is then further carburized in a hydrocarbon hydrogen gas at an elevated temperature to cause the grain growth inhibiting metal present to form the carbide. The second carburizing step is conducted with a carburizing gas having a carbon activity greater than about 2 for a relatively short period of time at 900.degree. C. to 1000.degree. C.
    • 在钴/碳化钨基体的形成期间,将包含碳化钒,碳化铬,碳化钽和碳化铌的晶粒生长抑制剂掺入钴/碳化钨基质中。 通过在溶液中混合钴组合物,钨组合物和抑制晶粒生长的金属组合物形成前体粉末,然后将其喷雾干燥。 然后将前体化合物在一氧化碳和二氧化碳中渗碳以形成钴/碳化钨基体。 然后在烃氢气中在升高的温度下进一步渗碳,以使存在的晶粒生长抑制金属形成碳化物。 第二渗碳步骤在900℃至1000℃下在较短时间内具有大于约2的碳活性的渗碳气体进行。
    • 53. 发明授权
    • Cemented carbide articles and master alloy composition
    • 硬质合金制品和主合金组成
    • US5841045A
    • 1998-11-24
    • US518498
    • 1995-08-23
    • Larry E. McCandlishRajendra K. Sadangi
    • Larry E. McCandlishRajendra K. Sadangi
    • C22C29/02B22F9/02C22C1/05C22C29/06C22C29/08
    • C22C29/08B22F9/026C22C1/051C22C29/067B22F2003/1032
    • A low melting point alloy is used to sinter metal carbide particles. The alloy is a eutectic-like alloy formed from a binding metal such as iron, cobalt or nickel, in combination with vanadium and chromium. The alloy is preferably formed by forming two separate alloys and blending these together. The first alloy is formed by spray drying together a solution of a binding metal salt such as a cobalt salt with a solution of a chromium salt. The formed particles are then carburized to form a cobalt-chromium-carbon alloy. A separate vanadium alloy is formed in the same manner. The two are combined to establish the amount of chromium and vanadium desired, and this, in turn, is used to sinter metal carbide parts. This permits sintering of the metal carbide parts at temperatures less than 1250.degree. C. and in turn significantly inhibits grain grown without a significant decrease in toughness. It is particularly adapted to form carbide products wherein the carbide grain size is as low as 120 nanometers.
    • 使用低熔点合金烧结金属碳化物颗粒。 该合金是由诸如铁,钴或镍的结合金属与钒和铬组合形成的共晶合金。 合金优选通过形成两个单独的合金并将它们混合在一起形成。 第一合金是通过将结合金属盐如钴盐与铬盐溶液一起喷雾干燥而形成的。 然后将形成的颗粒渗碳以形成钴 - 铬 - 碳合金。 以相同的方式形成单独的钒合金。 两者结合以确定所需的铬和钒的量,并且这又用于烧结金属碳化物部件。 这允许在小于1250℃的温度下烧结金属碳化物部件,并且进而显着抑制晶粒生长而不显着降低韧性。 特别适用于碳化物产物,其中碳化物晶粒尺寸低至120纳米。
    • 56. 发明公开
    • 나노 사이즈의 결정입 성장 억제제를 갖는 초미세 다결정질 다이아몬드의 제조방법
    • 用纳米尺寸生长抑制剂制造超声波多晶金刚石
    • KR1020120058430A
    • 2012-06-07
    • KR1020110125815
    • 2011-11-29
    • 엘리먼트 씩스 리미티드
    • 바오,야화야오,시안호만,스캇
    • C01B31/06C01G23/04B22F3/00
    • C01B32/25B22F3/10B22F2003/1032C01G23/04C01P2004/61C01P2006/90
    • PURPOSE: A method for manufacturing ultrafine polycrystalline diamond based on a crystal grain growth inhibitor of nano sizes is provided to improve the intensity and the abrasion characteristic of the polycrystalline diamond. CONSTITUTION: The mixture of diamond particles is prepared, the average particle size of the diamond particles is about 1um or less(101). A plurality of the particles containing titanium of nano-sizes is dispersed in the mixture(102). The particles containing the titanium function as a crystal grain growth inhibitor. The particles and the diamond particles are sintered under high pressures and temperatures(103). Sintered polycrystalline texture of diamond crystal grain is obtained. When the particles containing the titanium are dispersed, a plurality of titanium oxide particles is deposited on the surface of diamond particles. The titanium oxide particles are converted into crystal grain growth inhibitor containing titanium.
    • 目的:提供一种基于纳米尺寸的晶粒生长抑制剂制造超细多晶金刚石的方法,以改善多晶金刚石的强度和磨损特性。 构成:制备金刚石颗粒的混合物,金刚石颗粒的平均粒度为约1um或更小(101)。 多个含有纳米尺寸的钛的颗粒分散在混合物(102)中。 含有钛的颗粒作为晶粒生长抑制剂起作用。 颗粒和金刚石颗粒在高压和高温下烧结(103)。 获得金刚石晶粒的烧结多晶结构。 当含有钛的颗粒分散时,在金刚石颗粒的表面上沉积多个氧化钛颗粒。 氧化钛粒子被转化成含有钛的晶粒生长抑制剂。