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    • 57. 发明授权
    • Device and method for generating a plasma by means of a traveling wave resonator
    • 用于通过行波谐振器产生等离子体的装置和方法
    • US09210789B2
    • 2015-12-08
    • US13508607
    • 2010-11-19
    • Horia-Eugen PorteanuRoland GescheSilvio Kuehn
    • Horia-Eugen PorteanuRoland GescheSilvio Kuehn
    • B23K9/00B23K9/02H05H1/46H05H1/24
    • H05H1/46H05H1/24H05H2001/466
    • A device for generating a plasma, comprises an alternating voltage source, a travelling wave resonator and coupling means that are designed to couple the alternating voltage generated by the alternating voltage source into the travelling wave resonator in such a manner that travelling electromagnetic waves are produced, wherein the travelling wave resonator is designed to increase the electric field strength of the travelling electromagnetic waves in such a manner that a plasma is ignited in a gas. The invention further relates to a method for generating a plasma, comprising the steps of: generating an alternating voltage; generating travelling electromagnetic waves in a travelling wave resonator by coupling said alternating voltage into the travelling wave resonator; and increasing the electric field strength of the travelling electromagnetic waves in the travelling wave resonator in order to ignite a plasma in a gas.
    • 一种用于产生等离子体的装置,包括交流电压源,行波谐振器和耦合装置,其被设计成以产生行进电磁波的方式将由交流电压源产生的交流电耦合到行波谐振器中, 其特征在于,所述行波谐振器被设计成以等离子体在气体中点燃的方式增加所述行进电磁波的电场强度。 本发明还涉及一种用于产生等离子体的方法,包括以下步骤:产生交流电压; 通过将所述交流电压耦合到行波谐振器中,在行波谐振器中产生行波电磁波; 并且增加行波谐振器中的行进电磁波的电场强度,以点燃气体中的等离子体。
    • 59. 发明授权
    • Arrangement for generating electromagnetic radiation
    • 用于产生电磁辐射的布置
    • US08987713B2
    • 2015-03-24
    • US13643767
    • 2011-04-20
    • Fritz HennebergerHenning RiechertNorbert Koch
    • Fritz HennebergerHenning RiechertNorbert Koch
    • H01L35/24H01L51/50B82Y20/00H01L51/52H01L51/56
    • H01L51/5088B82Y20/00H01L51/52H01L51/56
    • The invention relates, inter alia, to an arrangement (10) for generating electromagnetic radiation, wherein the arrangement comprises inorganic semiconductor material and organic material (130), characterized by a semiconductor cylinder (30, 40) composed of inorganic semiconductor material and a charge carrier injection zone (50) situated in the semiconductor cylinder, wherein the charge carrier injection zone adjoins the lateral surface (110) of the semiconductor cylinder, the organic material (130) is suitable for emitting electromagnetic radiation in the case of a charge carrier recombination, and the organic material bears indirectly or directly on that section of the lateral surface of the semiconductor cylinder which is adjoined by the charge carrier injection zone and electron-hole pairs from the charge carrier injection zone of the semiconductor cylinder can enter into the organic material, and excite there the emission of electromagnetic radiation by recombination.
    • 本发明尤其涉及用于产生电磁辐射的装置(10),其中所述装置包括无机半导体材料和有机材料(130),其特征在于由无机半导体材料和电荷组成的半导体圆柱体(30,40) 载流子注入区(50),其中所述电荷载体注入区毗邻所述半导体圆柱体的侧表面(110),所述有机材料(130)适用于在电荷载体复合的情况下发射电磁辐射 并且有机材料间接地或直接地在与电荷载体注入区相邻的半导体圆柱体的侧表面的该部分上承载,并且来自半导体圆柱体的电荷载体注入区的电子 - 空穴对可以进入有机材料 并通过重组激发电磁辐射的发射。
    • 60. 发明授权
    • Semiconductor layer structure
    • 半导体层结构
    • US08809968B2
    • 2014-08-19
    • US13888400
    • 2013-05-07
    • Forschungsverbund Berlin E.V.
    • Oliver HiltRimma ZhytnytskaHans-Joachim Würfl
    • H01L29/02
    • H01L29/78H01L29/06H01L29/2003H01L29/66462H01L29/7787H01L29/861
    • This invention relates to a semiconductor layer structure. The semiconductor layer structure described includes a substrate and a buffer layer deposited onto the substrate. The semiconductor layer structure is characterized in that a drain voltage threshold lower than the breakdown voltage threshold is determined by isolating ions that are selectively implanted in just one region of the substrate into the substrate, wherein charge can dissipate from the one contact through the buffer layer towards a substrate region without isolating ions, if the one potential deviates from the other at least by the drain voltage threshold, and wherein the substrate region without isolating ions is located underneath the one contact. The semiconductor layer structure described allows dissipation of currents induced by induction in blocking active structures without damaging the active structures.
    • 本发明涉及半导体层结构。 所述的半导体层结构包括衬底和沉积在衬底上的缓冲层。 半导体层结构的特征在于,通过将选择性地植入衬底的一个区域中的离子分离到衬底中来确定低于击穿电压阈值的漏极电压阈值,其中电荷可以通过缓冲层从一个触点消散 如果一个电位至少与漏极电压阈值相离,则衬底区域不隔离离子,并且其中不隔离离子的衬底区域位于一个触点下方。 所描述的半导体层结构允许在阻挡有源结构的情况下感应诱导的电流的耗散而不损坏有源结构。