专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08536620B2 Integrated circuit including a hetero-interface and self adjusted diffusion method for manufacturing the same 失效
标题翻译：集成电路，包括用于制造其的异质界面和自调节扩散方法
公开(公告)号：US08536620B2
公开(公告)日：2013-09-17
申请号：US12242137
申请日：2008-09-30
申请人： Henning Riechert , Walter Michael Weber
发明人： Henning Riechert , Walter Michael Weber
IPC分类号： H01L21/337 , H01L29/80
CPC分类号： H01L29/0665 , B82Y10/00 , H01L27/108 , H01L27/10852 , H01L27/10876 , H01L28/40 , H01L29/0673 , H01L29/165 , H01L29/267 , H01L29/42392 , H01L29/66825 , H01L29/7827 , H01L29/78642 , H01L29/78681 , H01L29/78687 , H01L29/78696 , H01L29/7881
摘要： An integrated circuit including a hetero-interface and a manufacturing method thereof is disclosed. One embodiment includes forming a hetero-structure including a hetero-interface at a junction between a first region and a second region, and, thereafter introducing a material into the first region and at least up to the hetero-interface, wherein a diffusion constant of the material is higher in the first region than in the second region.
摘要翻译：公开了一种包括异质界面的集成电路及其制造方法。一个实施方案包括在第一区域和第二区域之间的连接处形成包括异质界面的异质结构，然后将材料引入第一区域并且至少直到异质界面，其中扩散常数该材料在第一区域比在第二区域高。

2. 发明授权

US07088753B2 Semiconductor laser structure 有权
标题翻译：半导体激光器结构
公开(公告)号：US07088753B2
公开(公告)日：2006-08-08
申请号：US10181854
申请日：2000-12-04
申请人： Henning Riechert , Anton Yurevitch Egorov
发明人： Henning Riechert , Anton Yurevitch Egorov
IPC分类号： H01S5/00
CPC分类号： H01S5/343 , B82Y20/00 , H01S5/32366 , H01S5/32375 , H01S5/34346 , H01S5/34353
摘要： The active layer (1) and the barrier layers (2) contain a group III component, a group V component and nitrogen, whereby the active layer is a quaternary material and the barrier layers are ternary materials, or, in order to match the lattice properties of the active layer to the barrier layers, the nitrogen content in the barrier layers is higher. The active layer is preferably InGaAsN, the barrier layers are InGaAsN with higher nitrogen content or GaAsN. Superlattices may exist in the barrier layers, for example, series of thin layers of InxGa1-xAsyN1-y with varying factors x and y, where, in particular, x=0 and y=1.
摘要翻译：有源层（1）和阻挡层（2）包含III族组分，V族组分和氮，由此活性层是四元材料，并且阻挡层是三元材料，或者为了匹配晶格有源层对阻挡层的性质，阻挡层中的氮含量较高。有源层优选为InGaAsN，势垒层为具有较高氮含量的InGaAsN或GaAsN。超晶格可以存在于阻挡层中，例如，一系列薄层的In 1 x 1 Al x Y 1 N x N 1 -y 具有变化的因子x和y，其中，特别地，x = 0和y = 1。

3. 发明授权

US08987713B2 Arrangement for generating electromagnetic radiation 有权
标题翻译：用于产生电磁辐射的布置
公开(公告)号：US08987713B2
公开(公告)日：2015-03-24
申请号：US13643767
申请日：2011-04-20
申请人： Fritz Henneberger , Henning Riechert , Norbert Koch
发明人： Fritz Henneberger , Henning Riechert , Norbert Koch
IPC分类号： H01L35/24 , H01L51/50 , B82Y20/00 , H01L51/52 , H01L51/56
CPC分类号： H01L51/5088 , B82Y20/00 , H01L51/52 , H01L51/56
摘要： The invention relates, inter alia, to an arrangement (10) for generating electromagnetic radiation, wherein the arrangement comprises inorganic semiconductor material and organic material (130), characterized by a semiconductor cylinder (30, 40) composed of inorganic semiconductor material and a charge carrier injection zone (50) situated in the semiconductor cylinder, wherein the charge carrier injection zone adjoins the lateral surface (110) of the semiconductor cylinder, the organic material (130) is suitable for emitting electromagnetic radiation in the case of a charge carrier recombination, and the organic material bears indirectly or directly on that section of the lateral surface of the semiconductor cylinder which is adjoined by the charge carrier injection zone and electron-hole pairs from the charge carrier injection zone of the semiconductor cylinder can enter into the organic material, and excite there the emission of electromagnetic radiation by recombination.
摘要翻译：本发明尤其涉及用于产生电磁辐射的装置（10），其中所述装置包括无机半导体材料和有机材料（130），其特征在于由无机半导体材料和电荷组成的半导体圆柱体（30,40）载流子注入区（50），其中所述电荷载体注入区毗邻所述半导体圆柱体的侧表面（110），所述有机材料（130）适用于在电荷载体复合的情况下发射电磁辐射并且有机材料间接地或直接地在与电荷载体注入区相邻的半导体圆柱体的侧表面的该部分上承载，并且来自半导体圆柱体的电荷载体注入区的电子 - 空穴对可以进入有机材料并通过重组激发电磁辐射的发射。

4. 发明申请

US20130092908A1 ARRANGEMENT FOR GENERATING ELECTROMAGNETIC RADIATION 有权
标题翻译：用于产生电磁辐射的装置
公开(公告)号：US20130092908A1
公开(公告)日：2013-04-18
申请号：US13643767
申请日：2011-04-20
申请人： Fritz Henneberger , Henning Riechert , Norbert Koch
发明人： Fritz Henneberger , Henning Riechert , Norbert Koch
IPC分类号： H01L51/50 , H01L51/56
CPC分类号： H01L51/5088 , B82Y20/00 , H01L51/52 , H01L51/56
摘要： The invention relates, inter alia, to an arrangement (10) for generating electromagnetic radiation, wherein the arrangement comprises inorganic semiconductor material and organic material (130), characterized by a semiconductor cylinder (30, 40) composed of inorganic semiconductor material and a charge carrier injection zone (50) situated in the semiconductor cylinder, wherein the charge carrier injection zone adjoins the lateral surface (110) of the semiconductor cylinder, the organic material (130) is suitable for emitting electromagnetic radiation in the case of a charge carrier recombination, and the organic material bears indirectly or directly on that section of the lateral surface of the semiconductor cylinder which is adjoined by the charge carrier injection zone and electron-hole pairs from the charge carrier injection zone of the semiconductor cylinder can enter into the organic material, and excite there the emission of electromagnetic radiation by recombination.
摘要翻译：本发明尤其涉及用于产生电磁辐射的装置（10），其中所述装置包括无机半导体材料和有机材料（130），其特征在于由无机半导体材料和电荷组成的半导体圆柱体（30,40）载流子注入区（50），其中所述电荷载体注入区毗邻所述半导体圆柱体的侧表面（110），所述有机材料（130）适用于在电荷载体复合的情况下发射电磁辐射并且有机材料间接地或直接地在与电荷载体注入区相邻的半导体圆柱体的侧表面的该部分上承载，并且来自半导体圆柱体的电荷载体注入区的电子 - 空穴对可以进入有机材料并通过重组激发电磁辐射的发射。

5. 发明申请

US20100078681A1 Integrated Circuit Including a Hetero-Interface and Self Adjusted Diffusion Method for Manufacturing the Same 失效
标题翻译：包含异构界面和自调制扩散方法的集成电路制造相同
公开(公告)号：US20100078681A1
公开(公告)日：2010-04-01
申请号：US12242137
申请日：2008-09-30
申请人： Henning Riechert , Walter Michael Weber
发明人： Henning Riechert , Walter Michael Weber
IPC分类号： H01L21/337 , H01L29/80
CPC分类号： H01L29/0665 , B82Y10/00 , H01L27/108 , H01L27/10852 , H01L27/10876 , H01L28/40 , H01L29/0673 , H01L29/165 , H01L29/267 , H01L29/42392 , H01L29/66825 , H01L29/7827 , H01L29/78642 , H01L29/78681 , H01L29/78687 , H01L29/78696 , H01L29/7881
摘要： An integrated circuit including a hetero-interface and a manufacturing method thereof is disclosed. One embodiment includes forming a hetero-structure including a hetero-interface at a junction between a first region and a second region, and, thereafter introducing a material into the first region and at least up to the hetero-interface, wherein a diffusion constant of the material is higher in the first region than in the second region.
摘要翻译：公开了一种包括异质界面的集成电路及其制造方法。一个实施方案包括在第一区域和第二区域之间的连接处形成包括异质界面的异质结构，然后将材料引入第一区域并且至少直到异质界面，其中扩散常数该材料在第一区域比在第二区域高。

6. 发明授权

US06396081B1 Light source for generating a visible light 有权
标题翻译：用于产生可见光的光源
公开(公告)号：US06396081B1
公开(公告)日：2002-05-28
申请号：US09720695
申请日：2001-04-02
申请人： Helmut Tews , Robert Averbeck , Henning Riechert
发明人： Helmut Tews , Robert Averbeck , Henning Riechert
IPC分类号： H01L2715
CPC分类号： H01L33/50
摘要： Light source (1) for generating visible light (200), comprising at least one diode (10) on a semiconductor basis emitting ultraviolet light (100) and at least one luminophor (20) into which the emitted ultraviolet light (100) beams and which generates the visible light from the emitted ultraviolet light (100). Application: Generation of white light offering especially high color fidelity.
摘要翻译：用于产生可见光（200）的光源（1），包括至少一个半导体发光二极管（10），发射紫外光（100）和至少一个发光体（20），发射的紫外光（100）光束和其产生来自发射的紫外线（100）的可见光。应用：产生具有特别高的色彩保真度的白光。

7. 发明授权

US6028328A HEMT double hetero structure 失效
标题翻译： HEMT双异质结构
公开(公告)号：US6028328A
公开(公告)日：2000-02-22
申请号：US91494
申请日：1998-06-18
申请人： Henning Riechert , Thomas Grave
发明人： Henning Riechert , Thomas Grave
IPC分类号： H01L29/10 , H01L29/778 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L29/1029 , H01L29/7783
摘要： DH-PHEMT on a GaAs substrate, with a mixed crystal composition that is varied in the channel in such a way that the lower boundary of the conduction band is lowered toward the gate contact, and advantages of an SH-PHEMT are thereby simultaneously realized. For this purpose, the channel is for example InGaAs, and the In portion x of the In.sub.x Ga.sub.1-x As of the channel is increased in a step from 0.2 to 0.3 in the direction toward the gate contact.
摘要翻译： PCT No.PCT / DE96 / 02450 Sec。 371日期1998年6月18日 102（e）1998年6月18日PCT 1996年12月18日PCT PCT。公开号WO97 / 25746 日期1997年7月17日在GaAs衬底上的D-PHEMT，其中混合晶体组成在通道中变化，使得导带的下边界朝向栅极接触降低，并且SH-PHEMT的优点从而同时实现。为此，通道是例如InGaAs，并且沟道的In x Ga 1-x As的In部分x在朝向栅极接触的方向上从0.2增加到0.3。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式