会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 54. 发明专利
    • Interlayer wiring element based on carbon nanotube
    • 基于碳纳米管的中间层接线元件
    • JP2008166756A
    • 2008-07-17
    • JP2007320949
    • 2007-12-12
    • Commiss Energ Atomコミツサリア タ レネルジー アトミーク
    • DIJON JEANPANTIGNY PHILIPPE
    • H01L21/768C01B31/02C23C16/04C23C16/26
    • H01L21/76877H01L21/7682H01L23/5226H01L23/53276H01L2221/1094H01L2924/0002H01L2924/00
    • PROBLEM TO BE SOLVED: To provide an interlayer wiring element based on carbon nanotube that implies excellent electric contact between carbon nanotube and a conductor that makes interlayer wiring. SOLUTION: The present invention relates to an element designed to make interlayer wiring of at least two conductors of a micro electronics circuit, including an initial conductor 210 called a lower side conductor; a dielectric layer 230 arranged in the initial conductor; a second conductor 220 called an upper side conductor on the dielectric layer; and a hollow part 240 in the dielectric layer that appears on the lower side conductor at one side and on the upper side conductor on the other side. The upper side conductor 220 has a bridge formed in the upper part of the lower side conductor 210, and the hollow part 240 has two vents 243 in latter both sides on a horizontal surface where it appears on the upper side conductor. COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:提供一种基于碳纳米管的层间布线元件,其意味着碳纳米管与形成层间布线的导体之间的良好的电接触。 解决方案:本发明涉及一种设计用于制造微电子电路的至少两个导体的层间布线的元件,包括称为下侧导体的初始导体210; 布置在初始导体中的电介质层230; 称为电介质层上的上侧导体的第二导体220; 以及在一侧的下侧导体和另一侧的上侧导体上出现的电介质层中的中空部240。 上侧导体220具有形成在下侧导体210的上部的桥,并且中空部240在后方的两侧具有在出现在上侧导体上的水平面上的两个通气口243。 版权所有(C)2008,JPO&INPIT
    • 57. 发明专利
    • Storage device with multi-level structure
    • 具有多级结构的存储设备
    • JP2008160121A
    • 2008-07-10
    • JP2007327918
    • 2007-12-19
    • Commiss Energ Atomコミツサリア タ レネルジー アトミーク
    • GIDON SERGE
    • H01L21/8247H01L27/115H01L29/788H01L29/792
    • H01L27/11521H01L27/11551H01L27/11556H01L29/0665H01L29/0673H01L29/0676H01L29/42332H01L29/7883
    • PROBLEM TO BE SOLVED: To propose a storage device whose storage capacity is not simply linked to the increase of the surface integration density and surface size of memory elements.
      SOLUTION: This data storage device (100) comprises a stack of layers (4a, 4b) formed by arranging a first layer (4a) with conductivity of about less than 0.01 (Ωcm)
      -1 and a second layer (4b) with conductivity of about more than 1 (Ωcm)
      -1 alternately, a plurality of pillars (6, 6a, 6b) arranged in the stack of those layers that penetrate the layers (4a, 4b) in this stack, and means to impress voltage on the edge of the foregoing pillars equipped with the network of a movable micro spike (22). Each pillar is fabricated with at least part of semiconductor material (8a, 8b) surrounded by at least one potential storage layer electrically insulated from the part and stack of semiconductor material (10a, 10b).
      COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:提出一种存储容量不是简单地与存储元件的表面积分密度和表面尺寸的增加相关联的存储装置。 解决方案:该数据存储装置(100)包括通过布置导电率小于0.01(Ωcm)SP-1的第一层(4a)而形成的层叠层(4a,4b) 和交替地具有大于1(Ωcm) -1 的电导率的第二层(4b),布置在穿透层的那些层的堆叠中的多个柱(6,6a,6b) (4a,4b),以及用于在装备有可移动微尖钉(22)的网络的上述柱的边缘上施加电压的装置。 每个支柱制造有至少一部分由与半导体材料(10a,10b)的部分和堆叠电绝缘的至少一个电位存储层围绕的半导体材料(8a,8b)。 版权所有(C)2008,JPO&INPIT