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    • 56. 发明授权
    • Method for making phase change memory
    • 相变存储器的方法
    • US08621746B2
    • 2014-01-07
    • US13332486
    • 2011-12-21
    • Peng LiuQun-Qing LiKai-Li JiangShou-Shan Fan
    • Peng LiuQun-Qing LiKai-Li JiangShou-Shan Fan
    • H01R43/00
    • H01L45/06H01L45/126H01L45/144
    • A method for making phase change memory is provided. The method includes following steps. A substrate is provided. A plurality of first row electrode leads and the second row electrode leads is located on the substrate. A carbon nanotube layer is applied on the substrate to cover the first row electrode lead and the second row electrode lead. The carbon nanotube layer is patterned to form a plurality of carbon nanotube units located on the second row electrode lead. A phase change layer is applied on the surface of each carbon nanotube unit. A plurality of first electrodes, a plurality of second electrodes, a plurality of first row electrode leads and a plurality of second row electrode leads is located on the substrate.
    • 提供了一种制造相变存储器的方法。 该方法包括以下步骤。 提供基板。 多个第一行电极引线和第二行电极引线位于基板上。 在基板上涂布碳纳米管层以覆盖第一行电极引线和第二行电极引线。 图案化碳纳米管层以形成位于第二行电极引线上的多个碳纳米管单元。 在每个碳纳米管单元的表面上施加相变层。 多个第一电极,多个第二电极,多个第一行电极引线和多个第二行电极引线位于基板上。