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51. 发明申请

US20090286362A1 Method for making thin film transistor 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US20090286362A1
公开(公告)日：2009-11-19
申请号：US12384245
申请日：2009-04-02
申请人： Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
发明人： Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
IPC分类号： H01L21/336
CPC分类号： H01L51/102 , B82Y10/00 , H01L51/0048 , H01L51/0541 , H01L51/0545 , Y10S977/742 , Y10S977/75 , Y10S977/842 , Y10S977/932
摘要： A method for making a thin film transistor, the method comprising the steps of: providing a growing substrate; applying a catalyst layer on the growing substrate; heating the growing substrate with the catalyst layer in a furnace with a protective gas therein, supplying a carbon source gas and a carrier gas at a ratio ranging from 100:1 to 100:10, and growing a carbon nanotube layer on the growing substrate; forming a source electrode, a drain electrode, and a gate electrode; and covering the carbon nanotube layer with an insulating layer, wherein the source electrode and the drain electrode are electrically connected to the single-walled carbon nanotube layer, the gate electrode is opposite to and electrically insulated from the single-walled carbon nanotube layer.
摘要翻译：一种制造薄膜晶体管的方法，所述方法包括以下步骤：提供生长衬底; 在生长衬底上施加催化剂层; 在其中具有保护气体的炉中用催化剂层加热生长衬底，以100:1至100:10的比例供应碳源气体和载气，并在生长衬底上生长碳纳米管层; 形成源电极，漏电极和栅电极; 并且用绝缘层覆盖碳纳米管层，其中源电极和漏电极电连接到单壁碳纳米管层，栅电极与单壁碳纳米管层相对并与其电绝缘。

52. 发明申请

US20090260688A1 PHOTOVOLTAIC DEVICE 有权
标题翻译：光电器件
公开(公告)号：US20090260688A1
公开(公告)日：2009-10-22
申请号：US12339364
申请日：2008-12-19
申请人： Hai-Lin Sun , Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
发明人： Hai-Lin Sun , Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
IPC分类号： H01L31/00
CPC分类号： H01L31/022466 , H01L31/0745 , H01L31/1884 , Y02E10/50 , Y10S977/742 , Y10S977/932 , Y10S977/948
摘要： A photovoltaic device includes a silicon substrate, an intrinsic layer, a carbon nanotube structure and a first electrode. The silicon substrate has a front surface and a rear surface. The intrinsic layer is disposed on the front surface of the silicon substrate. The carbon nanotube structure is disposed on the intrinsic layer. The first electrode is disposed on the rear surface of the silicon substrate.
摘要翻译：光电器件包括硅衬底，本征层，碳纳米管结构和第一电极。硅衬底具有前表面和后表面。本征层设置在硅衬底的前表面上。碳纳米管结构设置在本征层上。第一电极设置在硅衬底的后表面上。

53. 发明申请

US20090257947A1 Method of manufacturing zinc aluminate nano-material 有权
标题翻译：制造铝酸锌纳米材料的方法
公开(公告)号：US20090257947A1
公开(公告)日：2009-10-15
申请号：US12291302
申请日：2008-11-06
申请人： Hai-Lin Sun , Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
发明人： Hai-Lin Sun , Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
IPC分类号： C01F7/02 , C23C16/00 , C23C14/00
CPC分类号： C01G9/00 , B82Y30/00 , C01P2004/64
摘要： A method for making zinc aluminate nano-material, the method comprises the following steps. Firstly, providing a growing substrate and a growing device, and the growing device comprising a heating apparatus and a reacting room. Secondly, placing the growing substrate and a quantity of reacting materials into the reaction room, and the reacting materials comprising zinc and aluminum. Thirdly, introducing an oxygen-containing gas into the reaction room. Lastly, heating the reaction room to a temperature of 660˜1100° C.
摘要翻译：一种制备铝酸锌纳米材料的方法，该方法包括以下步骤。首先，提供不断增长的衬底和生长装置，并且生长装置包括加热装置和反应室。其次，将生长的基材和一定数量的反应材料放置在反应室中，以及包含锌和铝的反应材料。第三，将含氧气体引入反应室。最后，将反应室加热至660〜1100℃

54. 发明申请

US20090197038A1 CARBON NANOTUBE FILM STRUCTURE AND METHOD FOR MAKING THE SAME 有权
标题翻译：碳纳米管薄膜结构及其制造方法
公开(公告)号：US20090197038A1
公开(公告)日：2009-08-06
申请号：US12243059
申请日：2008-10-01
申请人： Xue-Shen Wang , Qun-Qing Li , Kai-Li Jiang , Shou-Shan Fan
发明人： Xue-Shen Wang , Qun-Qing Li , Kai-Li Jiang , Shou-Shan Fan
IPC分类号： B32B5/12 , C23C16/00
CPC分类号： C01B31/0226 , B01J21/185 , B01J23/74 , B01J23/745 , B01J23/881 , B01J23/8906 , B01J37/0219 , B82Y30/00 , B82Y40/00 , C01B31/0233 , C01B32/16 , C01B32/162 , C01B2202/02 , C01B2202/04 , C01B2202/06 , C01B2202/08 , C01B2202/34 , C01B2202/36 , C01P2004/13 , Y10S977/843 , Y10T428/24132 , Y10T428/249924
摘要： A carbon nanotube film structure includes at least one carbon nanotube film or at least two stacked carbon nanotube films. Each carbon nanotube film includes a plurality of ultralong carbon nanotubes parallel to the surface of the carbon nanotube film and parallel to each other. A length of the ultralong carbon nanotube is equal to or greater than 1 centimeter. The invention is also related to a method for making the above-described carbon nanotube film structure.
摘要翻译：碳纳米管膜结构包括至少一个碳纳米管膜或至少两个堆叠的碳纳米管膜。每个碳纳米管膜包括平行于碳纳米管膜的表面并且彼此平行的多个超长碳纳米管。超长碳纳米管的长度等于或大于1厘米。本发明还涉及制造上述碳纳米管薄膜结构的方法。

55. 发明授权

US09555562B2 Method for making nano-scale film 有权
标题翻译：制作纳米级膜的方法
公开(公告)号：US09555562B2
公开(公告)日：2017-01-31
申请号：US11982487
申请日：2007-11-02
申请人： Li-Na Zhang , Yao-Jun Zhang , Yi Ren , Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
发明人： Li-Na Zhang , Yao-Jun Zhang , Yi Ren , Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
IPC分类号： B29C41/12
CPC分类号： B29C41/12
摘要： A method for making a nano-scale film includes the steps of: (a) providing a suspension including an organic solvent and a number of nano-scale particles dispersed therein; (b) dropping/releasing the suspension into a liquid having a specific gravity greater than that of the nano-scale particles; and (c) forming a uniform film of nano-scale particles on the surface of the liquid.
摘要翻译：制备纳米级膜的方法包括以下步骤：（a）提供包含分散在其中的有机溶剂和许多纳米级颗粒的悬浮液; （b）将悬浮液滴入/释放到比重大于纳米级颗粒的液体的液体中; 和（c）在液体表面上形成均匀的纳米级颗粒膜。

56. 发明授权

US08621746B2 Method for making phase change memory 有权
标题翻译：相变存储器的方法
公开(公告)号：US08621746B2
公开(公告)日：2014-01-07
申请号：US13332486
申请日：2011-12-21
申请人： Peng Liu , Qun-Qing Li , Kai-Li Jiang , Shou-Shan Fan
发明人： Peng Liu , Qun-Qing Li , Kai-Li Jiang , Shou-Shan Fan
IPC分类号： H01R43/00
CPC分类号： H01L45/06 , H01L45/126 , H01L45/144
摘要： A method for making phase change memory is provided. The method includes following steps. A substrate is provided. A plurality of first row electrode leads and the second row electrode leads is located on the substrate. A carbon nanotube layer is applied on the substrate to cover the first row electrode lead and the second row electrode lead. The carbon nanotube layer is patterned to form a plurality of carbon nanotube units located on the second row electrode lead. A phase change layer is applied on the surface of each carbon nanotube unit. A plurality of first electrodes, a plurality of second electrodes, a plurality of first row electrode leads and a plurality of second row electrode leads is located on the substrate.
摘要翻译：提供了一种制造相变存储器的方法。该方法包括以下步骤。提供基板。多个第一行电极引线和第二行电极引线位于基板上。在基板上涂布碳纳米管层以覆盖第一行电极引线和第二行电极引线。图案化碳纳米管层以形成位于第二行电极引线上的多个碳纳米管单元。在每个碳纳米管单元的表面上施加相变层。多个第一电极，多个第二电极，多个第一行电极引线和多个第二行电极引线位于基板上。

57. 发明授权

US08597990B2 Method for making thin film transistor 有权
公开(公告)号：US08597990B2
公开(公告)日：2013-12-03
申请号：US12384241
申请日：2009-04-02
申请人： Qun-Qing Li , Xue-Shen Wang , Kai-Li Jiang , Shou-Shan Fan
发明人： Qun-Qing Li , Xue-Shen Wang , Kai-Li Jiang , Shou-Shan Fan
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L29/6675 , B82Y10/00 , B82Y40/00 , H01L29/0665 , H01L29/0673 , H01L51/0012 , H01L51/0048 , H01L51/0541
摘要： A method for making a thin film transistor, the method comprising the steps of: providing an insulating substrate; forming a carbon nanotube layer on the insulating substrate, the carbon nanotube layer includes a plurality of carbon nanotubes; applying a source electrode and a drain electrode spaced from each other and electrically connected to two opposite ends of at least one of carbon nanotubes; covering the carbon nanotube layer with an insulating layer; and placing a gate electrode on the insulating layer, the gate electrode being opposite to and electrically insulated from the carbon nanotube layer by the insulating layer.

58. 发明授权

US08211398B2 Method for making semiconducting carbon nanotubes 有权
标题翻译：制造半导体碳纳米管的方法
公开(公告)号：US08211398B2
公开(公告)日：2012-07-03
申请号：US12952536
申请日：2010-11-23
申请人： Xue-Shen Wang , Qun-Qing Li , Shou-Shan Fan
发明人： Xue-Shen Wang , Qun-Qing Li , Shou-Shan Fan
IPC分类号： B82Y40/00 , D01F9/12
CPC分类号： B82Y40/00 , B01J23/745 , B01J35/0013 , B01J37/08 , B82Y30/00 , C01B32/162 , C01B2202/22 , Y10S977/742 , Y10S977/842
摘要： A method for making semiconducting carbon nanotubes is provided. A catalyst precursor is disposed on a substrate. The catalyst precursor includes blood. Organic substances contained in the blood are removed and iron ions contained in the blood are oxidized to yield discrete ferric oxide nano-particles on the substrate. The ferric oxide nano-particles are reduced to yield isolated iron nano-particles on the substrate. Carbon nanotubes then grow on the iron nano-particles.
摘要翻译：提供制造半导体碳纳米管的方法。催化剂前体设置在基板上。催化剂前体包括血液。血液中含有的有机物被除去，血液中含有的铁离子被氧化，在基底上产生离散的三氧化二铁纳米粒子。还原氧化亚铁纳米颗粒以在基底上产生分离的铁纳米颗粒。然后碳纳米管在铁纳米颗粒上生长。

59. 发明授权

US08197598B2 Method for manufacturing iron silicide nano-wires 有权
标题翻译：铁硅化物纳米线的制造方法
公开(公告)号：US08197598B2
公开(公告)日：2012-06-12
申请号：US12291300
申请日：2008-11-06
申请人： Hai-Lin Sun , Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
发明人： Hai-Lin Sun , Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
IPC分类号： C30B25/00
CPC分类号： C01B33/06 , Y10S117/902
摘要： A method for making iron silicide nano-wires comprises the following steps. Firstly, providing a growing substrate and a growing device, the growing device comprising a heating apparatus and a reacting room. Secondly, placing the growing substrate and a quantity of iron powder into the reacting room. Thirdly, introducing a silicon-containing gas into the reacting room. Finally, heating the reacting room to a temperature of 600˜1200° C.
摘要翻译：制造铁硅化物纳米线的方法包括以下步骤。首先，提供增长的衬底和生长装置，该生长装置包括加热装置和反应室。其次，将生长的基材和一定量的铁粉放入反应室。第三，将含硅气体引入反应室。最后，将反应室加热至600〜1200℃

60. 发明授权

US08154011B2 Thin film transistor 有权
标题翻译：薄膜晶体管
公开(公告)号：US08154011B2
公开(公告)日：2012-04-10
申请号：US12384281
申请日：2009-04-02
申请人： Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
发明人： Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
IPC分类号： H01L29/06
CPC分类号： H01L51/0558 , B82Y10/00 , H01L51/0048 , H01L51/0541 , H01L51/0545 , H01L51/102 , Y10S977/762
摘要： A thin film transistor includes a source electrode, a drain electrode, a semiconductor layer, a channel and a gate electrode. The drain electrode is spaced from the source electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconducting layer by an insulating layer. The channel includes a plurality of carbon nanotube wires, one end of each carbon nanotube wire is connected to the source electrode, and opposite end of each the carbon nanotube wire is connected to the drain electrode.
摘要翻译：薄膜晶体管包括源电极，漏电极，半导体层，沟道和栅电极。漏电极与源电极间隔开。栅电极通过绝缘层与源电极，漏电极和半导体层绝缘。通道包括多个碳纳米管线，每个碳纳米管线的一端连接到源电极，并且每个碳纳米管线的相对端连接到漏电极。

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