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51. 发明授权

US09082663B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09082663B2
公开(公告)日：2015-07-14
申请号：US13608042
申请日：2012-09-10
申请人： Atsuo Isobe , Toshinari Sasaki
发明人： Atsuo Isobe , Toshinari Sasaki
IPC分类号： H01L29/78 , H01L21/336 , H01L27/12 , H01L29/417 , H01L29/786
CPC分类号： H01L27/1225 , H01L29/41733 , H01L29/78618 , H01L29/7869
摘要： In a semiconductor device including an oxide semiconductor layer, a conductive layer is formed in contact with a lower portion of the oxide semiconductor layer and treatment for adding an impurity is performed, so that a channel formation region and a pair of low-resistance regions between which the channel formation region is sandwiched are formed in the oxide semiconductor layer in a self-aligned manner. Wiring layers electrically connected to the conductive layer and the low-resistance regions are provided in openings of an insulating layer.
摘要翻译：在包括氧化物半导体层的半导体器件中，形成与氧化物半导体层的下部接触的导电层，并且进行用于添加杂质的处理，使得沟道形成区域和一对低电阻区域在在自对准的方式在氧化物半导体层中形成夹着沟道形成区域的区域。电连接到导电层和低电阻区域的接线层设置在绝缘层的开口中。

52. 发明授权

US08878288B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08878288B2
公开(公告)日：2014-11-04
申请号：US13446026
申请日：2012-04-13
申请人： Atsuo Isobe , Toshinari Sasaki
发明人： Atsuo Isobe , Toshinari Sasaki
IPC分类号： H01L29/66 , H01L29/786 , H01L29/423
CPC分类号： H01L29/78603 , H01L29/4236 , H01L29/42384 , H01L29/7869 , H01L29/78696
摘要： To provide a highly reliable semiconductor device. To provide a semiconductor device which prevents a defect and achieves miniaturization. An oxide semiconductor layer in which the thickness of a region serving as a source region or a drain region is larger than the thickness of a region serving as a channel formation region is formed in contact with an insulating layer including a trench. In a transistor including the oxide semiconductor layer, variation in threshold voltage, degradation of electric characteristics, and shift to normally on can be suppressed and source resistance or drain resistance can be reduced, so that the transistor can have high reliability.
摘要翻译：提供高度可靠的半导体器件。提供一种防止缺陷并实现小型化的半导体器件。形成与包括沟槽的绝缘层接触的用作源区或漏区的区域的厚度大于用作沟道形成区的区的厚度的氧化物半导体层。在包括氧化物半导体层的晶体管中，可以抑制阈值电压的变化，电特性的劣化和正常的导通，可以降低源电阻或漏极电阻，从而晶体管可以具有高的可靠性。

53. 发明授权

US08796078B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08796078B2
公开(公告)日：2014-08-05
申请号：US12787757
申请日：2010-05-26
申请人： Toshinari Sasaki , Hiroki Ohara , Junichiro Sakata
发明人： Toshinari Sasaki , Hiroki Ohara , Junichiro Sakata
IPC分类号： H01L21/336 , H01L21/786
CPC分类号： H01L29/66969 , H01L21/02164 , H01L21/02565 , H01L21/30604 , H01L29/45 , H01L29/78618 , H01L29/7869 , H01L29/78696
摘要： An object is to provide a highly reliable semiconductor device including a thin film transistor having stable electric characteristics. In addition, another object is to manufacture a highly reliable semiconductor device at low cost with high productivity. In a method for manufacturing a semiconductor device including a thin film transistor including an oxide semiconductor layer as a channel formation region, the oxide semiconductor layer is heated under a nitrogen atmosphere to lower its resistance, thereby forming a low-resistance oxide semiconductor layer. Further, resistance of a region of the low-resistance oxide semiconductor layer, which is overlapped with a gate electrode layer, is selectively increased, thereby forming a high-resistance oxide semiconductor layer. Resistance of the oxide semiconductor layer is increased by forming a silicon oxide film in contact with the oxide semiconductor layer by a sputtering method.
摘要翻译：目的在于提供一种具有稳定电特性的薄膜晶体管的高度可靠的半导体装置。此外，另一个目的是以高生产率以低成本制造高度可靠的半导体器件。在包括具有作为沟道形成区域的氧化物半导体层的薄膜晶体管的半导体器件的制造方法中，在氮气气氛下加热氧化物半导体层以降低其电阻，从而形成低电阻氧化物半导体层。此外，选择性地增加与栅电极层重叠的低电阻氧化物半导体层的区域的电阻，从而形成高电阻氧化物半导体层。通过溅射法形成与氧化物半导体层接触的氧化硅膜，可提高氧化物半导体层的电阻。

54. 发明授权

US08609478B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08609478B2
公开(公告)日：2013-12-17
申请号：US12826007
申请日：2010-06-29
申请人： Toshinari Sasaki , Junichiro Sakata , Hiroki Ohara , Shunpei Yamazaki
发明人： Toshinari Sasaki , Junichiro Sakata , Hiroki Ohara , Shunpei Yamazaki
IPC分类号： H01L21/84
CPC分类号： H01L21/02664 , H01L21/02565 , H01L27/1225 , H01L29/66969 , H01L29/78606 , H01L29/78618 , H01L29/7869
摘要： It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin film transistor where a semiconductor layer including a channel formation region using an oxide semiconductor layer, a source region, and a drain region are formed using an oxide semiconductor layer, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor layer.
摘要翻译：本发明的目的是提供一种高度可靠的半导体器件，其包括具有稳定电特性的薄膜晶体管。另一个目的是以更高的生产率以更低的成本制造高可靠性的半导体器件。在制造半导体器件的方法中，该半导体器件包括薄膜晶体管，其中使用氧化物半导体层形成包括使用氧化物半导体层的沟道形成区域，源极区域和漏极区域的半导体层，用于减少杂质的热处理例如水分（用于脱水或脱氢的热处理）以提高氧化物半导体层的纯度。

55. 发明授权

US08421083B2 Semiconductor device with two oxide semiconductor layers and manufacturing method thereof 有权
标题翻译：具有两个氧化物半导体层的半导体器件及其制造方法
公开(公告)号：US08421083B2
公开(公告)日：2013-04-16
申请号：US12846556
申请日：2010-07-29
申请人： Shunpei Yamazaki , Kengo Akimoto , Masashi Tsubuku , Toshinari Sasaki , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Kengo Akimoto , Masashi Tsubuku , Toshinari Sasaki , Hideaki Kuwabara
IPC分类号： H01L29/04 , H01L21/00 , G02F1/135
CPC分类号： H01L33/0041 , H01L27/1214 , H01L27/1225 , H01L27/124 , H01L27/1248 , H01L29/78606 , H01L29/7869 , H01L29/78696 , H01L2924/0002 , H01L2924/00
摘要： In a bottom-gate thin film transistor using the stack of the first oxide semiconductor layer and the second oxide semiconductor layer, an oxide insulating layer serving as a channel protective layer is formed over and in contact with part of the oxide semiconductor layer overlapping with a gate electrode layer. In the same step as formation of the insulating layer, an oxide insulating layer covering a peripheral portion (including a side surface) of the stack of the oxide semiconductor layers is formed.
摘要翻译：在使用第一氧化物半导体层和第二氧化物半导体层的堆叠的底栅极薄膜晶体管中，形成作为沟道保护层的氧化物绝缘层，与氧化物半导体层的与栅电极层。在与绝缘层的形成相同的步骤中，形成覆盖氧化物半导体层的叠层的周边部分（包括侧面）的氧化物绝缘层。

56. 发明授权

US08410486B2 Method for manufacturing microcrystalline semiconductor film and method for manufacturing semiconductor device 有权
标题翻译：微晶半导体膜的制造方法及半导体装置的制造方法
公开(公告)号：US08410486B2
公开(公告)日：2013-04-02
申请号：US13102386
申请日：2011-05-06
申请人： Sachiaki Tezuka , Yasuhiro Jinbo , Toshinari Sasaki , Hidekazu Miyairi
发明人： Sachiaki Tezuka , Yasuhiro Jinbo , Toshinari Sasaki , Hidekazu Miyairi
IPC分类号： H01L29/10
CPC分类号： H01L29/78648 , C23C16/24 , H01L21/02422 , H01L21/0245 , H01L21/02505 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L29/04 , H01L29/66765 , H01L29/78678 , H01L29/78696
摘要： A method for manufacturing a semiconductor device having favorable electric characteristics with high productivity is provided. A first microcrystalline semiconductor film is formed over an oxide insulating film under a first condition that mixed phase grains with high crystallinity are formed at a low particle density. After that, a second microcrystalline semiconductor film is stacked over the first microcrystalline semiconductor film under a second condition that a space between the mixed phase grains are filled by the crystal growth of the mixed phase grains of the first microcrystalline semiconductor film.
摘要翻译：提供了一种制造具有高生产率的良好电特性的半导体器件的方法。在氧化物绝缘膜上形成第一微晶半导体膜，第一条件是以低的颗粒密度形成具有高结晶度的混相晶粒。之后，在第一微晶半导体膜上，通过第一微晶半导体膜的混晶相的晶体生长填充混合相晶粒之间的间隔，在第一微晶半导体膜上层叠第二微晶半导体膜。

57. 发明授权

US08298858B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08298858B2
公开(公告)日：2012-10-30
申请号：US13292207
申请日：2011-11-09
申请人： Hideaki Kuwabara , Kengo Akimoto , Toshinari Sasaki
发明人： Hideaki Kuwabara , Kengo Akimoto , Toshinari Sasaki
IPC分类号： H01L21/34
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/04 , H01L29/24 , H01L29/458 , H01L29/4908 , H01L29/78696
摘要： An object is to increase field effect mobility of a thin film transistor including an oxide semiconductor. Another object is to stabilize electrical characteristics of the thin film transistor. In a thin film transistor including an oxide semiconductor layer, a semiconductor layer or a conductive layer having higher electrical conductivity than the oxide semiconductor is formed over the oxide semiconductor layer, whereby field effect mobility of the thin film transistor can be increased. Further, by forming a semiconductor layer or a conductive layer having higher electrical conductivity than the oxide semiconductor between the oxide semiconductor layer and a protective insulating layer of the thin film transistor, change in composition or deterioration in film quality of the oxide semiconductor layer is prevented, so that electrical characteristics of the thin film transistor can be stabilized.
摘要翻译：目的是增加包括氧化物半导体的薄膜晶体管的场效应迁移率。另一个目的是稳定薄膜晶体管的电特性。在包括氧化物半导体层的薄膜晶体管中，在氧化物半导体层上形成具有比氧化物半导体更高的导电性的半导体层或导电层，由此可以提高薄膜晶体管的场效应迁移率。此外，通过在氧化物半导体层和薄膜晶体管的保护绝缘层之间形成具有比氧化物半导体更高的导电性的半导体层或导电层，防止氧化物半导体层的组成变化或膜质量的劣化，使得薄膜晶体管的电特性能够稳定。

58. 发明授权

US08216878B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08216878B2
公开(公告)日：2012-07-10
申请号：US12826015
申请日：2010-06-29
申请人： Toshinari Sasaki , Junichiro Sakata , Hiroki Ohara , Shunpei Yamazaki
发明人： Toshinari Sasaki , Junichiro Sakata , Hiroki Ohara , Shunpei Yamazaki
IPC分类号： H01L21/00
CPC分类号： H01L29/66969 , H01L27/1225 , H01L27/124 , H01L29/24 , H01L29/42356 , H01L29/42384 , H01L29/66742 , H01L29/78606 , H01L29/78618 , H01L29/7869 , H01L29/78696
摘要： It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin film transistor where a semiconductor layer having a channel formation region, a source region, and a drain region are formed using an oxide semiconductor layer, heat treatment (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor layer and reduce impurities such as moisture. Moreover, the oxide semiconductor layer subjected to the heat treatment is slowly cooled under an oxygen atmosphere.
摘要翻译：本发明的目的是提供一种高度可靠的半导体器件，其包括具有稳定电特性的薄膜晶体管。另一个目的是以更高的生产率以更低的成本制造高可靠性的半导体器件。在包括薄膜晶体管的半导体器件的制造方法中，使用氧化物半导体层形成具有沟道形成区域，源极区域和漏极区域的半导体层，进行热处理（脱水或脱氢的热处理）以提高氧化物半导体层的纯度并减少诸如水分的杂质。此外，在氧气氛下缓慢冷却经受热处理的氧化物半导体层。

59. 发明授权

US08058647B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08058647B2
公开(公告)日：2011-11-15
申请号：US12614786
申请日：2009-11-09
申请人： Hideaki Kuwabara , Kengo Akimoto , Toshinari Sasaki
发明人： Hideaki Kuwabara , Kengo Akimoto , Toshinari Sasaki
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/04 , H01L29/24 , H01L29/458 , H01L29/4908 , H01L29/78696
摘要： An object is to increase field effect mobility of a thin film transistor including an oxide semiconductor. Another object is to stabilize electrical characteristics of the thin film transistor. In a thin film transistor including an oxide semiconductor layer, a semiconductor layer or a conductive layer having higher electrical conductivity than the oxide semiconductor is formed over the oxide semiconductor layer, whereby field effect mobility of the thin film transistor can be increased. Further, by forming a semiconductor layer or a conductive layer having higher electrical conductivity than the oxide semiconductor between the oxide semiconductor layer and a protective insulating layer of the thin film transistor, change in composition or deterioration in film quality of the oxide semiconductor layer is prevented, so that electrical characteristics of the thin film transistor can be stabilized.
摘要翻译：目的是增加包括氧化物半导体的薄膜晶体管的场效应迁移率。另一个目的是稳定薄膜晶体管的电特性。在包括氧化物半导体层的薄膜晶体管中，在氧化物半导体层上形成具有比氧化物半导体更高的导电性的半导体层或导电层，由此可以提高薄膜晶体管的场效应迁移率。此外，通过在氧化物半导体层和薄膜晶体管的保护绝缘层之间形成具有比氧化物半导体更高的导电性的半导体层或导电层，防止氧化物半导体层的组成变化或膜质量的劣化，使得薄膜晶体管的电特性能够稳定。

60. 发明授权

US06513424B1 Device and method for processing powder and granular material 失效
标题翻译：粉末和颗粒材料的处理装置及方法
公开(公告)号：US06513424B1
公开(公告)日：2003-02-04
申请号：US09647897
申请日：2000-10-06
申请人： Akira Iwasaki , Toshinari Sasaki , Shigetoshi Kashiwagi , Shigemi Isobe
发明人： Akira Iwasaki , Toshinari Sasaki , Shigetoshi Kashiwagi , Shigemi Isobe
IPC分类号： B30B1116
CPC分类号： B30B11/16 , B30B11/006 , B30B11/18 , B30B15/0017 , B30B15/0082 , B30B15/308
摘要： A pair of compression rollers 38a and 38b parallel with each other are provided and powder grains are supplied to a powder grain introduction/compression part 50 formed between the rollers 38a and 38b and, thereby, compression moldings of the powder grains are formed. A powder grain press/feed means 20 is provided in a front stage of the rollers 38a and 38b. The press/feed means 20 has a deaerating barrel 24 and previously presses the powder grains supplied between the rollers 38a and 38b. In side surfaces of the rollers 38a and 38b, side seals 37 are arranged with clearances 72 maintained from the rollers 38a and 38b. During pressing the powder moldings, the powder grains enter into the clearances so that closer layers are formed between the side surfaces of the compression rollers 38a and 38b and the side seals 37, thereby sealing the powder grain introduction/compression part 50. In a rear stage of the rollers 38a and 38b, a shearing device 75 is provided and shears the compression moldings formed by the rollers 38a and 38b. Torque of the shearing device 75 is detected by a torque sensor, and the compression rollers 38a and 38b and the powder grain transport means 17 are controlled in accordance with the detected torque.
摘要翻译：设置一对彼此平行的压缩辊38a和38b，并且将粉末颗粒供给到形成在辊38a和38b之间的粉末颗粒引入/压缩部分50，从而形成粉末颗粒的压缩模制品。在辊38a和38b的前段设置有粉粒挤压/进给装置20。压榨/进料装置20具有脱气筒24并预先挤压供应在辊38a和38b之间的粉末颗粒。在辊38a和38b的侧表面中，侧密封件37布置有从辊38a和38b保持的间隙72。在挤压粉末成型体期间，粉粒进入间隙，使得在压缩辊38a和38b的侧表面与侧密封件37之间形成更近的层，从而密封粉粒引入/压缩部50.在后部辊38a和38b的阶段，设置有剪切装置75，并且剪切由辊38a和38b形成的压缩模制品。通过转矩传感器检测剪切装置75的扭矩，根据检测的转矩来控制压缩辊38a，38b和粉粒传送装置17。

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