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    • 56. 发明授权
    • Magnetic random access memory (MRAM) with enhanced magnetic stiffness and method of making same
    • 具有增强磁刚度的磁性随机存取存储器(MRAM)及其制造方法
    • US09070464B2
    • 2015-06-30
    • US13341826
    • 2011-12-30
    • Yuchen ZhouYiming Huai
    • Yuchen ZhouYiming Huai
    • H01L43/12G11C11/16
    • G11C11/161H01L43/12
    • A spin transfer torque magnetic random access memory (STTMRAM) element and a method of manufacturing the same is disclosed having a free sub-layer structure with enhanced internal stiffness. A first free sub-layer is deposited, the first free sub-layer being made partially of boron (B), annealing is performed of the STTMRAM element at a first temperature after depositing the first free sub-layer to reduce the B content at an interface between the first free sub-layer and the barrier layer, the annealing causing a second free sub-layer to be formed on top of the first free sub-layer and being made partially of B, the amount of B of the second free sub-layer being greater than the amount of B in the first free sub-layer. Cooling down the STTMRAM element to a second temperature that is lower than the first temperature and depositing a third free sub-layer directly on top of the second free layer, with the third free sub-layer being made partially of boron (B), wherein the amount of B in the third sub-free layer is less than the amount of B in the second free sub-layer.
    • 公开了具有增强的内部刚度的自由子层结构的自旋转矩磁性随机存取存储器(STTMRAM)元件及其制造方法。 沉积第一自由子层,第一自由子层部分由硼(B)制成,在沉积第一自由子层之后,在第一温度下对STTMRAM元素进行退火,以降低B 在第一自由子层和阻挡层之间的界面,退火使第二自由子层形成在第一自由子层的顶部上并且部分地由B构成,第二自由子层的B的量 层大于第一自由子层中的B的量。 将STTMRAM元件冷却至低于第一温度的第二温度,并将第三自由子层直接沉积在第二自由层的顶部上,第三自由子层部分由硼(B)制成,其中 第三子自由层中的B的量小于第二自由子层中的B的量。
    • 60. 发明申请
    • MTJ MRAM WITH STUD PATTERNING
    • MTJ MRAM与STUD PATTERNING
    • US20140042567A1
    • 2014-02-13
    • US13572197
    • 2012-08-10
    • Dong Ha JungKimihiro SatohJing ZhangYuchen ZhouYiming Huai
    • Dong Ha JungKimihiro SatohJing ZhangYuchen ZhouYiming Huai
    • H01L43/12H01L43/02
    • H01L43/12H01L43/08
    • Use of a multilayer etching mask that includes a stud mask and a removable spacer sleeve for MTJ etching to form a bottom electrode that is wider than the rest of the MTJ pillar is described. The first embodiment of the invention described includes a top electrode and a stud mask. In the second and third embodiments the stud mask is a conductive material and also serves as the top electrode. In embodiments after the stud mask is formed a spacer sleeve is formed around it to initially increase the masking width for a phase of etching. The spacer is removed for further etching, to create step structures that are progressively transferred down into the layers forming the MTJ pillar. In one embodiment the spacer sleeve is formed by net polymer deposition during an etching phase.
    • 描述了包括螺柱掩模和用于MTJ蚀刻以形成比MTJ柱的其余部分宽的底部电极的可移除间隔套的多层蚀刻掩模的使用。 所描述的本发明的第一实施例包括顶部电极和螺柱掩模。 在第二和第三实施例中,螺柱掩模是导电材料,并且还用作顶部电极。 在形成螺柱掩模之后的实施例中,在其周围形成间隔套,以最初增加蚀刻阶段的掩模宽度。 去除间隔物用于进一步蚀刻,以产生逐渐转移到形成MTJ柱的层中的阶梯结构。 在一个实施例中,间隔套筒是在蚀刻阶段期间通过净聚合物沉积形成的。