专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明申请

US20100090301A1 MAGNETIC STACK WITH OXIDE TO REDUCE SWITCHING CURRENT 有权
标题翻译：具有氧化物的磁性堆叠以减少切换电流
公开(公告)号：US20100090301A1
公开(公告)日：2010-04-15
申请号：US12425466
申请日：2009-04-17
申请人： Xiaohua Lou , Yuankai Zheng , Wenzhong Zhu , Wei Tian , Zheng Gao
发明人： Xiaohua Lou , Yuankai Zheng , Wenzhong Zhu , Wei Tian , Zheng Gao
IPC分类号： H01L29/82 , H01L21/00
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/16 , G11C11/1659 , G11C11/1675 , H01F10/3254 , H01F10/3268 , H01F41/303 , H01L43/12
摘要： A magnetic stack having a ferromagnetic free layer, a metal oxide layer that is antiferromagnetic at a first temperature and non-magnetic at a second temperature higher than the first temperature, a ferromagnetic pinned reference layer, and a non-magnetic spacer layer between the free layer and the reference layer. During a writing process, the metal oxide layer is non-magnetic. For magnetic memory cells, such as magnetic tunnel junction cells, the metal oxide layer provides reduced switching currents.
摘要翻译：具有铁磁自由层的磁性堆叠，在第一温度下为反铁磁性且在比第一温度高的第二温度下为非磁性的金属氧化物层，铁磁性固定基准层和非磁性间隔层之间，层和参考层。在写入过程中，金属氧化物层是非磁性的。对于诸如磁性隧道结电池的磁存储器单元，金属氧化物层提供降低的开关电流。

52. 发明申请

US20100080049A1 THERMALLY ASSISTED MULTI-BIT MRAM 有权
公开(公告)号：US20100080049A1
公开(公告)日：2010-04-01
申请号：US12242254
申请日：2008-09-30
申请人： Yuankai Zheng , Dimitar V. Dimitrov , Haiwen Xi
发明人： Yuankai Zheng , Dimitar V. Dimitrov , Haiwen Xi
IPC分类号： G11C11/02 , G11C11/409
CPC分类号： G11C11/15 , G11C11/1675 , G11C11/5607
摘要： Methods of writing to a multi-bit MRAM memory unit are described. The method includes to self-detected writing to a multi-bit (i.e., multilevel) thermally assisted MRAM. The self-detected writing increases a reading margin between data state levels and decreases reading margin variability due to cell resistance variation.

53. 发明申请

US20100078620A1 SEMICONDUCTOR DEVICE WITH THERMALLY COUPLED PHASE CHANGE LAYERS 有权
标题翻译：具有热耦合相变层的半导体器件
公开(公告)号：US20100078620A1
公开(公告)日：2010-04-01
申请号：US12242620
申请日：2008-09-30
申请人： Haiwen Xi , Xuefei (Michael) Tang , Yuankai Zheng , Patrick Ryan
发明人： Haiwen Xi , Xuefei (Michael) Tang , Yuankai Zheng , Patrick Ryan
IPC分类号： H01L45/00 , G11C11/56
CPC分类号： G11C13/0007 , G11C11/5678 , G11C11/5685 , G11C13/0004 , G11C2213/15 , G11C2213/32 , G11C2213/34 , H01L27/2409 , H01L45/04 , H01L45/06 , H01L45/1206 , H01L45/1233 , H01L45/144 , H01L45/146
摘要： Various embodiments of the present invention are generally directed to an apparatus and method associated with a semiconductor device with thermally coupled phase change layers. The semiconductor device comprises a first phase change layer selectively configurable in a relatively low resistance crystalline phase and a relatively high resistance amorphous phase, and a second phase change layer thermally coupled to the first phase change layer. The second phase change layer is characterized as a metal-insulator transition material. A programming pulse is applied to the semiconductor device from a first electrode layer to a second electrode layer to provide the first phase change layer with a selected resistance.
摘要翻译：本发明的各种实施例通常涉及与具有热耦合相变层的半导体器件相关联的装置和方法。半导体器件包括可选择性地配置在相对低电阻的结晶相和相对高电阻的非晶相中的第一相变层，以及热耦合到第一相变层的第二相变层。第二相变层的特征在于金属 - 绝缘体过渡材料。将编程脉冲从第一电极层施加到第二电极层，以向第一相变层提供选定的电阻。

54. 发明申请

US20080055792A1 MEMORY CELLS AND DEVICES HAVING MAGNETORESISTIVE TUNNEL JUNCTION WITH GUIDED MAGNETIC MOMENT SWITCHING AND METHOD 审中-公开
标题翻译：具有导向磁场切换和方法的磁阻隧道结的存储单元和器件
公开(公告)号：US20080055792A1
公开(公告)日：2008-03-06
申请号：US11683153
申请日：2007-03-07
申请人： Yuankai Zheng , Jinjun Qiu
发明人： Yuankai Zheng , Jinjun Qiu
IPC分类号： G11B5/33
CPC分类号： G01R33/093 , B82Y25/00 , G01R33/098 , G11C11/16
摘要： A magnetoresistive memory cell includes a magnetic tunnel junction (MTJ). The MTJ includes a magnetic layer having a pinned magnetic moment, a tunneling layer, and a free layer. The free layer includes first and second ferromagnetic layers having respective first and second free magnetic moments, which are anti-ferromagnetically coupled to each other and align with a preferred axis of alignment in the absence of an applied magnetic field. The MTJ has an electrical resistance dependent on the direction of one of the free magnetic moments. The memory cell also includes a guide layer formed of a ferromagnetic material providing a guiding magnetic moment, which is configured and positioned so that the guiding magnetic moment is more strongly magnetically coupled to the second free magnetic moment than to the first free magnetic moment, and is aligned with the axis in the absence of the applied magnetic field.
摘要翻译：磁阻存储单元包括磁隧道结（MTJ）。 MTJ包括具有固定磁矩，隧道层和自由层的磁性层。自由层包括具有相应的第一和第二自由磁矩的第一和第二铁磁层，它们在不存在所施加的磁场的情况下彼此反铁磁耦合并与优选的对准轴对准。 MTJ具有取决于自由磁矩之一的方向的电阻。存储单元还包括由提供引导磁矩的铁磁材料形成的引导层，该引导磁矩被构造和定位成使引导磁矩与第一自由磁矩更强烈地磁耦合到第二自由磁矩，以及在没有所施加的磁场的情况下与轴对齐。

55. 发明授权

US06597618B2 Magnetic tunnel junction magnetic random access memory 有权
标题翻译：磁隧道结磁随机存取存储器
公开(公告)号：US06597618B2
公开(公告)日：2003-07-22
申请号：US10185667
申请日：2002-06-27
申请人： Yuankai Zheng , Yihong Wu , Xiaoyan Wang , Dan You
发明人： Yuankai Zheng , Yihong Wu , Xiaoyan Wang , Dan You
IPC分类号： G11C700
CPC分类号： G11C11/16
摘要： A circuit for controlling a read operation for a magnetic random access memory (MRAM) comprising an array of magnetic tunnel junctions (MTJ) having conducting row and column lines attached thereto. The circuitry comprises a current supply for providing a read current, and a row selector for selecting a row containing a junction to be read and applying the read current to that row with the respective row line. An unselected row switch switches to at least some of the row lines not connected to the MTJ to be read, and a voltage source applies, via the unselected row switch, a voltage to each of the unselected row lines that is substantially identical in level to the voltage on the selected row line. A column selector selects the column line connected to the array containing the MTJ to be read, and a voltage detector for detecting the voltage across the MTJ to be read via the selected column and row lines.
摘要翻译：一种用于控制用于磁性随机存取存储器（MRAM）的读取操作的电路，包括具有连接到其上的导电行和列线的磁性隧道结（MTJ）阵列。电路包括用于提供读取电流的电流源，以及用于选择包含要读取的结的行的行选择器，并且将读取的电流施加到具有相应行行的该行。未选择的行开关切换到未连接到要读取的MTJ的至少一些行线，并且电压源通过未选择的行开关向每个未选择的行线施加电压，该电压基本上等于所选行线上的电压。列选择器选择连接到包含要读取的MTJ的阵列的列线，以及电压检测器，用于检测要通过所选列和行线读取的MTJ上的电压。

56. 发明授权

US09030864B2 Magnetic tunnel junction with electronically reflective insulative spacer 有权
标题翻译：磁性隧道结与电子反射绝缘垫片
公开(公告)号：US09030864B2
公开(公告)日：2015-05-12
申请号：US13611230
申请日：2012-09-12
申请人： Yuankai Zheng , Dimitar V. Dimitrov , Wei Tian , Dexin Wang , Zheng Gao , Xiaobin Wang
发明人： Yuankai Zheng , Dimitar V. Dimitrov , Wei Tian , Dexin Wang , Zheng Gao , Xiaobin Wang
IPC分类号： G11C11/16
CPC分类号： G11C11/161
摘要： Magnetic tunnel junctions having a specular insulative spacer are disclosed. The magnetic tunnel junction includes a free magnetic layer, a reference magnetic layer, an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the reference magnetic layer, and an electrically insulating and electronically reflective layer positioned to reflect at least a portion of electrons back into the free magnetic layer.
摘要翻译：公开了具有镜面绝缘间隔物的磁隧道结。磁性隧道结包括自由磁性层，参考磁性层，将自由磁性层与参考磁性层分离的电绝缘和非磁性隧道势垒层，以及电绝缘和电子反射层，其被定位成反射至少一个部分电子返回自由磁性层。

57. 发明授权

US08482967B2 Magnetic memory element with multi-domain storage layer 有权
标题翻译：具有多域存储层的磁记忆元件
公开(公告)号：US08482967B2
公开(公告)日：2013-07-09
申请号：US12938424
申请日：2010-11-03
申请人： Haiwen Xi , Yuankai Zheng , Xiaobin Wang , Dimitar V. Dimitrov , Pat J. Ryan
发明人： Haiwen Xi , Yuankai Zheng , Xiaobin Wang , Dimitar V. Dimitrov , Pat J. Ryan
IPC分类号： G11C11/00 , G11C11/14 , G11C11/15
CPC分类号： H01L43/02 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L27/228
摘要： An apparatus and method for enhancing data writing and retention to a magnetic memory element, such as in a non-volatile data storage array. In accordance with various embodiments, a programmable memory element has a reference layer and a storage layer. The reference layer is provided with a fixed magnetic orientation. The storage layer is programmed to have a first region with a magnetic orientation antiparallel to said fixed magnetic orientation, and a second region with a magnetic orientation parallel to said fixed magnetic orientation. A thermal assist layer may be incorporated into the memory element to enhance localized heating of the storage layer to aid in the transition of the first region from parallel to antiparallel magnetic orientation during a write operation.
摘要翻译：一种用于增强对诸如非易失性数据存储阵列中的磁存储元件的数据写入和保持的装置和方法。根据各种实施例，可编程存储元件具有参考层和存储层。参考层具有固定的磁性取向。存储层被编程为具有与所述固定磁性取向反平行的磁性取向的第一区域和具有与所述固定磁性取向平行的磁性取向的第二区域。可以将热辅助层结合到存储元件中以增强存储层的局部加热，以帮助在写入操作期间第一区域从平行转变为反平行磁取向。

58. 发明授权

US08362534B2 Flux-closed STRAM with electronically reflective insulative spacer 有权
公开(公告)号：US08362534B2
公开(公告)日：2013-01-29
申请号：US13115265
申请日：2011-05-25
申请人： Yuankai Zheng , Dimitar V. Dimitrov
发明人： Yuankai Zheng , Dimitar V. Dimitrov
IPC分类号： H01L21/02
CPC分类号： H01L29/82 , G11C11/16 , G11C11/161
摘要： Flux-closed spin-transfer torque memory having a specular insulative spacer is disclosed. A flux-closed spin-transfer torque memory unit includes a multilayer free magnetic element including a first free magnetic layer anti-ferromagnetically coupled to a second free magnetic layer through an electrically insulating and electronically reflective layer. An electrically insulating and non-magnetic tunneling barrier layer separates the free magnetic element from a reference magnetic layer.

59. 发明申请

US20130001718A1 MAGNETIC TUNNEL JUNCTION WITH ELECTRONICALLY REFLECTIVE INSULATIVE SPACER 审中-公开
标题翻译：具有电子反射绝缘间隔的磁性隧道结
公开(公告)号：US20130001718A1
公开(公告)日：2013-01-03
申请号：US13611230
申请日：2012-09-12
申请人： Yuankai Zheng , Dimitar V. Dimitrov , Wei Tian , Dexin Wang , Zheng Gao , Xiaobin Wang
发明人： Yuankai Zheng , Dimitar V. Dimitrov , Wei Tian , Dexin Wang , Zheng Gao , Xiaobin Wang
IPC分类号： H01L29/82
CPC分类号： G11C11/161
摘要： Magnetic tunnel junctions having a specular insulative spacer are disclosed. The magnetic tunnel junction includes a free magnetic layer, a reference magnetic layer, an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the reference magnetic layer, and an electrically insulating and electronically reflective layer positioned to reflect at least a portion of electrons back into the free magnetic layer.
摘要翻译：公开了具有镜面绝缘间隔物的磁隧道结。磁性隧道结包括自由磁性层，参考磁性层，将自由磁性层与参考磁性层分离的电绝缘和非磁性隧道势垒层，以及电绝缘和电子反射层，其被定位成反射至少一个部分电子返回自由磁性层。

60. 发明申请

US20120299135A1 NON VOLATILE MEMORY INCLUDING STABILIZING STRUCTURES 审中-公开
标题翻译：非易失性存储器，包括稳定结构
公开(公告)号：US20120299135A1
公开(公告)日：2012-11-29
申请号：US13568409
申请日：2012-08-07
申请人： Yuankai Zheng , Dimitar V. Dimitrov , Dexin Wang , Haiwen Xi , Xiaobin Wang , Wei Tian , Xiaohua Lou
发明人： Yuankai Zheng , Dimitar V. Dimitrov , Dexin Wang , Haiwen Xi , Xiaobin Wang , Wei Tian , Xiaohua Lou
IPC分类号： H01L29/82
CPC分类号： G11C11/161
摘要： An apparatus that includes a magnetic structure including a reference layer; and a free layer; an exchange coupling spacer layer; and a stabilizing layer, wherein the exchange coupling spacer layer is between the magnetic structure and the stabilizing layer and exchange couples the free layer of the magnetic structure to the stabilizing layer.
摘要翻译：一种包括具有参考层的磁性结构的装置; 和自由层; 交换耦合间隔层; 和稳定层，其中所述交换耦合间隔层位于所述磁性结构和所述稳定层之间并且将所述磁性结构的自由层与所述稳定层交换。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式