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    • 53. 发明授权
    • Semiconductor memory capable of being driven at low voltage and its manufacture method
    • 能够以低电压驱动的半导体存储器及其制造方法
    • US06927133B2
    • 2005-08-09
    • US10649994
    • 2003-08-28
    • Koji Takahashi
    • Koji Takahashi
    • G11C16/04H01L21/314H01L21/336H01L21/8247H01L27/115H01L29/788H01L29/792
    • H01L27/11521G11C16/0491H01L21/3144H01L27/115H01L29/66825H01L29/792
    • A gate insulating film is formed in a partial area of the surface of a semiconductor substrate, and on this gate insulating film, a gate electrode is formed. An ONO film is formed on the side wall of the gate electrode and on the surface of the semiconductor substrate on both sides of the gate electrode, conformable to the side wall and the surface. A silicon nitride film of the ONO film traps carriers. A conductive side wall spacer faces the side wall of the gate electrode and the surface of the semiconductor substrate via the ONO film. A conductive connection member electrically connects the side wall spacer and gate electrode. Source and drain regions are formed in the surface layer of the semiconductor substrate in areas sandwiching the gate electrode. A semiconductor device is provided which can store data of two bits in one memory cell and can be driven at a low voltage.
    • 在半导体衬底的表面的局部区域中形成栅极绝缘膜,并且在该栅极绝缘膜上形成栅电极。 在门电极的侧壁和半导体衬底的栅电极的两侧的表面上形成ONO膜,其与侧壁和表面一致。 ONO膜的氮化硅膜捕获载体。 导电侧壁隔离物经由ONO膜面对栅电极的侧壁和半导体衬底的表面。 导电连接构件电连接侧壁间隔物和栅电极。 源极和漏极区域形成在夹着栅电极的区域中的半导体衬底的表面层中。 提供一种半导体器件,其可以将两比特的数据存储在一个存储单元中并且可以以低电压驱动。
    • 58. 发明授权
    • Magnetic recording medium using a glass substrate
    • 使用玻璃基板的磁记录介质
    • US06503600B2
    • 2003-01-07
    • US09881023
    • 2001-06-15
    • Tsuyoshi WatanabeKoji TakahashiMasao Takano
    • Tsuyoshi WatanabeKoji TakahashiMasao Takano
    • G11B582
    • G11B5/7315C03C19/00C03C2204/08G11B5/7325G11B5/8404Y10S428/90Y10T428/24355Y10T428/315
    • In a magnetic recording medium, surface roughness of a glass substrate and the variation of the surface roughness are suppressed to the predetermined range. Namely, the surface roughness (Rmax, Ra, Rq) and the relation (Rmax/Ra) between Rmax and Ra are restricted to the predetermined range. In this event, Ra is representative of a center-line mean roughness, Rmax is defined as a maximum height representative of a difference between a highest point and a lowest point and Rq is representative of a root mean square roughness. Thereby, crystal grains of an underlying layer and a magnetic layer formed thereon are equalized. Specifically, the surface roughness is specified by Rmax≦15 nm, Ra≦1 nm and Rq≦1.5 nm. Further, the ratio between the surface roughness Rmax and the surface roughness Ra is specified by Rmax/Ra≦30.
    • 在磁记录介质中,玻璃基板的表面粗糙度和表面粗糙度的变化被抑制到预定范围。 也就是说,Rmax和Ra之间的表面粗糙度(Rmax,Ra,Rq)和关系(Rmax / Ra)被限制在预定范围内。 在这种情况下,Ra表示中心线平均粗糙度,Rmax被定义为表示最高点和最低点之间的差的最大高度,Rq表示均方根粗糙度。 由此,使基底层和其上形成的磁性层的晶粒相等。 具体地,表面粗糙度由Rmax <= 15nm,Ra <= 1nm和Rq <= 1.5nm规定。 此外,表面粗糙度Rmax与表面粗糙度Ra之比由Rmax / Ra <30表示。