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51. 发明授权

US07179672B2 Light-emitting device and method for manufacturing the same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US07179672B2
公开(公告)日：2007-02-20
申请号：US10976987
申请日：2004-11-01
申请人： Koji Asakawa , Akira Fujimoto , Hitoshi Sugiyama , Kenichi Ohashi , Kenji Suzuki , Junichi Tonotani
发明人： Koji Asakawa , Akira Fujimoto , Hitoshi Sugiyama , Kenichi Ohashi , Kenji Suzuki , Junichi Tonotani
IPC分类号： H01L21/00
CPC分类号： H01L33/22 , H01L21/0271
摘要： A nanometer size roughened structure is formed on a surface of a light-emitting element, and luminous efficiency is improved.The roughened structure on the surface of the light-emitting element of the invention is formed into the following shape such that the refractive index smoothly changes: (1) the mean diameter of projections on the roughened surface is smaller than the light wavelength; (2) a pitch of the roughened surface is irregular; and (3) positions of the top and bottom of the roughened surface are distributed from their mean values within the light wavelength in order to give a smooth gradient of the refractive index. The surface of such light-emitting element is obtained by forming a thin film on the surface of the light-emitting element using a resin composition which contains a block copolymer or graft copolymer and forms a micophase-separated structure in a self-organization manner; selectively removing at least one phase of the microphase-separated structure of the thin film formed on the surface; and etching the surface of the light-emitting element using the remaining phase as an etching mask.
摘要翻译：在发光元件的表面上形成纳米尺寸的粗糙结构，并提高发光效率。本发明的发光元件表面上的粗糙结构形成为以下形状，使得折射率平滑地变化：（1）粗糙面上的突起的平均直径小于光波长; （2）粗糙表面的间距不规则; 和（3）粗糙表面的顶部和底部的位置从其在光波长内的平均值分布，以便给出折射率的平滑梯度。这种发光元件的表面通过使用含有嵌段共聚物或接枝共聚物的树脂组合物在发光元件的表面上形成薄膜而以自组织形式形成微晶相分离结构而获得; 选择性地除去形成在表面上的薄膜的微相分离结构的至少一个相; 并使用剩余的相作为蚀刻掩模蚀刻发光元件的表面。

52. 发明申请

US20060175962A1 Organic EL display 失效
标题翻译：有机EL显示屏
公开(公告)号：US20060175962A1
公开(公告)日：2006-08-10
申请号：US11234189
申请日：2005-09-26
申请人： Akira Fujimoto , Koji Asakawa , Tsutomu Nakanishi
发明人： Akira Fujimoto , Koji Asakawa , Tsutomu Nakanishi
IPC分类号： H05B33/02
CPC分类号： H01L51/5262 , H01L27/3211
摘要： In an organic EL display provided with a transparent substrate, a buffer layer provided on the transparent substrate, and an organic EL element provided on the buffer layer, the buffer layer is formed of a material having the same refractive index as the transparent electrode of the EL element, and has a two-dimensional diffraction grating having two grating periods.
摘要翻译：在设置有透明基板的有机EL显示器中，设置在透明基板上的缓冲层和设置在缓冲层上的有机EL元件，缓冲层由具有与透明基板的透明电极相同的折射率的材料形成 EL元件，并且具有具有两个光栅周期的二维衍射光栅。

53. 发明授权

US07071026B2 Production method for making film carrier tape for mounting electronic devices thereon 失效
标题翻译：制造用于在其上安装电子装置的胶片载带的制造方法
公开(公告)号：US07071026B2
公开(公告)日：2006-07-04
申请号：US10735166
申请日：2003-12-12
申请人： Akira Fujimoto
发明人： Akira Fujimoto
IPC分类号： H01L21/44 , H01L21/48 , H01L21/50 , C25D5/02 , H05K3/00
CPC分类号： C25D5/48 , C25D21/08 , H01L21/4846 , H01L21/4864 , H01L23/498 , H01L23/4985 , H01L2924/0002 , H05K1/0393 , H05K3/241 , H05K3/3463 , H05K3/3473 , H05K2203/1545 , H01L2924/00
摘要： A film carrier tape for mounting electronic devices thereon has a tin-bismuth alloy deposit in which the bismuth content in the deposit is substantially uniform along a thickness direction thereof. The film carrier tape can be produced by plating at least a part of a wiring pattern with a tin-bismuth alloy and washing the tin-bismuth alloy deposit formed by plating with a water-ejecting washing nozzle within 6 seconds after the plating is completed. A plating apparatus for use in the above production includes a washing nozzle for washing the film carrier tape within 6 seconds after the film carrier tape has exited a plating tank.
摘要翻译：用于在其上安装电子器件的胶片载带具有锡 - 铋合金沉积物，其中沉积物中的铋含量沿其厚度方向基本均匀。可以通过用锡 - 铋合金电镀至少一部分布线图案并且在电镀完成后的6秒钟内用喷水清洗喷嘴洗涤由电镀形成的锡 - 铋合金沉积物来制造薄膜载带。在上述生产中使用的电镀装置包括：在薄膜载带离开镀槽后6秒内清洗薄膜载带的清洗喷嘴。

54. 发明授权

US06946046B2 Method and apparatus for separating member 失效
公开(公告)号：US06946046B2
公开(公告)日：2005-09-20
申请号：US10944864
申请日：2004-09-21
申请人： Kazutaka Yanagita , Mitsuharu Kohda , Kiyofumi Sakaguchi , Akira Fujimoto
发明人： Kazutaka Yanagita , Mitsuharu Kohda , Kiyofumi Sakaguchi , Akira Fujimoto
IPC分类号： H01L21/762 , H01L21/00 , H01L21/02 , H01L21/20 , H01L21/336 , H01L27/12 , H01L29/786 , B32B31/00
CPC分类号： H01L21/67092 , Y10S156/937 , Y10T83/364 , Y10T156/1137 , Y10T156/19 , Y10T156/1906 , Y10T156/1939
摘要： This invention is to appropriately separate a bonded substrate stack regardless of some distortion in the bonded substrate stack or the like. This separating apparatus includes a first nozzle which forms a jet with a large width and a second nozzle which forms a jet with a small width. When the outer portion of a bonded substrate stack is to be separated, a jet formed by the first nozzle is used. After that, when a portion inside the outer portion is to be separated, a jet formed by the second nozzle is used.

55. 发明申请

US20050112886A1 Light-emitting device and method for manufacturing the same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20050112886A1
公开(公告)日：2005-05-26
申请号：US10976987
申请日：2004-11-01
申请人： Koji Asakawa , Akira Fujimoto , Hitoshi Sugiyama , Kenichi Ohashi , Kenji Suzuki , Junichi Tonotani
发明人： Koji Asakawa , Akira Fujimoto , Hitoshi Sugiyama , Kenichi Ohashi , Kenji Suzuki , Junichi Tonotani
IPC分类号： H01L33/22 , B32B1/00 , H01L21/302 , H01L21/461
CPC分类号： H01L33/22 , H01L21/0271
摘要： A nanometer size roughened structure is formed on a surface of a light-emitting element, and luminous efficiency is improved. The roughened structure on the surface of the light-emitting element of the invention is formed into the following shape such that the refractive index smoothly changes: (1) the mean diameter of projections on the roughened surface is smaller than the light wavelength; (2) a pitch of the roughened surface is irregular; and (3) positions of the top and bottom of the roughened surface are distributed from their mean values within the light wavelength in order to give a smooth gradient of the refractive index. The surface of such light-emitting element is obtained by forming a thin film on the surface of the light-emitting element using a resin composition which contains a block copolymer or graft copolymer and forms a micophase-separated structure in a self-organization manner; selectively removing at least one phase of the microphase-separated structure of the thin film formed on the surface; and etching the surface of the light-emitting element using the remaining phase as an etching mask.
摘要翻译：在发光元件的表面上形成纳米尺寸的粗糙结构，并提高发光效率。本发明的发光元件表面上的粗糙结构形成为以下形状，使得折射率平滑地变化：（1）粗糙面上的突起的平均直径小于光波长; （2）粗糙表面的间距不规则; 和（3）粗糙表面的顶部和底部的位置从其在光波长内的平均值分布，以便给出折射率的平滑梯度。这种发光元件的表面通过使用含有嵌段共聚物或接枝共聚物的树脂组合物在发光元件的表面上形成薄膜而以自组织形式形成微晶相分离结构而获得; 选择性地除去形成在表面上的薄膜的微相分离结构的至少一个相; 并使用剩余的相作为蚀刻掩模蚀刻发光元件的表面。

56. 发明申请

US20050073051A1 Semiconductor integrated circuit device and manufacturing method thereof 失效
标题翻译：半导体集成电路器件及其制造方法
公开(公告)号：US20050073051A1
公开(公告)日：2005-04-07
申请号：US10871282
申请日：2004-06-21
申请人： Naoki Yamamoto , Akio Nishida , Akira Fujimoto , Hiraku Chakihara , Hideyuki Matsuoka , Toshiyuki Mine
发明人： Naoki Yamamoto , Akio Nishida , Akira Fujimoto , Hiraku Chakihara , Hideyuki Matsuoka , Toshiyuki Mine
IPC分类号： H01L21/768 , H01L21/02 , H01L21/28 , H01L21/336 , H01L21/822 , H01L21/8238 , H01L21/8242 , H01L27/00 , H01L27/06 , H01L27/08 , H01L27/092 , H01L29/78 , H01L29/786
CPC分类号： H01L21/02063 , H01L21/76843 , H01L21/76849 , H01L21/76867 , H01L21/76886 , H01L21/8221 , H01L27/0688 , H01L2924/0002 , H01L2924/00
摘要： A manufacturing process for a semiconductor integrated circuit device which prevents occurrence of reaction between metal wiring and a boron-doped silicon plug over it in heat treatment for a MOS transistor to be formed over them and reduces the possibility of rise in contact resistance. Metal boride is formed on an exposed metal surface in the bottom of an opening made in an interlayer insulating film over the metal wiring. In order to facilitate formation of such metal boride, metal oxide remaining on the metal surface is removed with an aqueous ammonia solution. The meal surface is irradiated with high energy ultraviolet light in order to remove organic matter remaining in the opening and facilitate removal of the metal oxide with the aqueous ammonia solution.
摘要翻译：一种用于半导体集成电路器件的制造方法，其防止金属布线和硼掺杂硅插塞之间在其上形成的MOS晶体管的热处理中发生反应，并降低接触电阻上升的可能性。金属硼化物形成在金属布线上的位于层间绝缘膜的开口底部的露出的金属表面上。为了促进这种金属硼化物的形成，用氨水溶液除去残留在金属表面上的金属氧化物。用高能量紫外线照射餐面，以除去残留在开口中的有机物质，并利用氨水溶液去除金属氧化物。

57. 发明授权

US06825056B2 Light-emitting device and method for manufacturing the same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US06825056B2
公开(公告)日：2004-11-30
申请号：US10330086
申请日：2002-12-30
申请人： Koji Asakawa , Akira Fujimoto , Hitoshi Sugiyama , Kenichi Ohashi , Kenji Suzuki , Junichi Tonotani
发明人： Koji Asakawa , Akira Fujimoto , Hitoshi Sugiyama , Kenichi Ohashi , Kenji Suzuki , Junichi Tonotani
IPC分类号： H01L2100
CPC分类号： H01L33/22 , H01L21/0271
摘要： A nanometer size roughened structure is formed on a surface of a light-emitting element, and luminous efficiency is improved. The roughened structure is formed into the following shape to change refractive index smoothly: (1) the mean diameter of projections on the roughened surface is smaller than the light wavelength; (2) a pitch of the roughened surface is irregular; and (3) positions of the top and bottom of the roughened surface are distributed from their mean values within the light wavelength. The surface of such light-emitting element is obtained by forming a thin film on the surface of the light-emitting element using a block or graft copolymer comprising resin composition and forms a self-assembled microphase-separated structure; selectively removing at least one phase of the microphase-separated structure; and etching the surface of the light-emitting element using the remaining phase as an etching mask.
摘要翻译：在发光元件的表面上形成纳米尺寸的粗糙结构，并提高发光效率。粗糙结构形成为以下形状以平滑地改变折射率：（1）粗糙表面上的突起的平均直径小于光波长; （2）粗糙表面的间距不规则; 和（3）粗糙表面的顶部和底部的位置从它们在光波长内的平均值分布。这种发光元件的表面通过使用包含树脂组合物的嵌段或接枝共聚物在发光元件的表面上形成薄膜而获得，并形成自组装的微相分离结构; 选择性地除去微相分离结构的至少一个相; 并使用剩余的相作为蚀刻掩模蚀刻发光元件的表面。

58. 发明授权

US5088025A Input/output processor control system with a plurality of staging buffers and data buffers 失效
标题翻译：具有多个分段缓冲器和数据缓冲器的输入/输出处理器控制系统
公开(公告)号：US5088025A
公开(公告)日：1992-02-11
申请号：US313116
申请日：1989-02-21
申请人： Akira Fujimoto
发明人： Akira Fujimoto
IPC分类号： G06F13/372
CPC分类号： G06F13/372
摘要： A control system for multiple channel data transfers between a main bus and a data bus is provided. A novel input/output processor control which permits multiple word transfers to occur in a single predetermined time slot while resolving buffer access conflicts and includes staging buffers coupled to the main bus and data buffers coupled to the data bus. A J-Bus is coupled between the staging buffers and the data buffers and is controlled by J-Bus transfer controller. A D-Bus transfer controller controls information transferred to an from the data bus and the data buffers. An M-Bus transfer controller controls information transferred to and from the staging buffers and the M-Bus. A controllable time slot generator in addition to generating the time slots for transferring information between the data buffers on the J-Bus also provides means for resolving conflicts between the J-Bus and the D-Bus and the M-Bus.
摘要翻译：提供了一种用于在主总线和数据总线之间进行多通道数据传输的控制系统。一种新颖的输入/输出处理器控制，其允许在单个预定时隙中发生多个字传输，同时解决缓冲器访问冲突，并且包括耦合到主总线和耦合到数据总线的数据缓冲器的分级缓冲器。 J-Bus耦合在分段缓冲器和数据缓冲器之间，由J-Bus传输控制器控制。 D-Bus传输控制器控制从数据总线和数据缓冲器传输到的信息。 M-Bus传输控制器控制传送到和从分段缓冲器和M-Bus传输的信息。除了产生用于在J-Bus上的数据缓冲器之间传送信息的时隙之外，可控时隙发生器还提供用于解决J-Bus与D-Bus和M-Bus之间冲突的手段。

59. 发明授权

US4575852A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US4575852A
公开(公告)日：1986-03-11
申请号：US501340
申请日：1983-06-06
申请人： Akira Fujimoto , Shigeaki Yamashita , Hirohiko Yasuda , Yoshikazu Yama
发明人： Akira Fujimoto , Shigeaki Yamashita , Hirohiko Yasuda , Yoshikazu Yama
IPC分类号： H01S5/00 , H01S5/042 , H01S3/19
CPC分类号： H01S5/0422
摘要： A p-type semiconductor layer and an active layer and an n-type semiconductor layer are laminated in this order onto an n-type semiconductor layer. The n-type semiconductor layer is provided with an electron injection electrode on its upper part and a narrow current path is formed in its interior with the inversion diffusion layers. A positive hole injection electrode is provided on the p-type semiconductor layer. The direction of taking out the positive hole injection layer is the same as that of the electron injection electrode.
摘要翻译：依次将p型半导体层和有源层和n型半导体层层叠在n型半导体层上。 n型半导体层在其上部设置有电子注入电极，并且在其内部形成有反转扩散层的窄电流通路。在p型半导体层上设置有空穴注入电极。取出空穴注入层的方向与电子注入电极的方向相同。

60. 发明授权

US4571729A Semiconductor laser having an inverted layer in a plurality of stepped offset portions 失效
标题翻译：半导体激光器在多个台阶偏移部分中具有倒置层
公开(公告)号：US4571729A
公开(公告)日：1986-02-18
申请号：US523673
申请日：1983-08-16
申请人： Akira Fujimoto
发明人： Akira Fujimoto
IPC分类号： H01S5/026 , H01S5/028 , H01S5/062 , H01S5/223 , H01S5/40 , H01S3/19
CPC分类号： H01S5/2238 , H01S5/028 , H01S5/06209 , H01S5/4031 , H01S5/026 , H01S5/06243 , H01S5/4043
摘要： A semiconductor crystal comprises a plurality of double heterojunction constructions in which layers of semiconductors of the same conductive type are laminated. The plurality of double heterojunction constructions are formed with step differential portion by step portion. In the step differential portion, active layers which constitute a plurality of double heterojunction constructions are laterally formed with PN junction portions which provide laser oscillation. The PN junction portions are formed from an inverted layer in which a conductive body of a second type is diffused over an area on the surface of the semiconductor crystal to the step differential portion. Carrier injection electrodes formed on both surfaces of the semiconductor crystal may either cover the entire surface of both the surfaces of the crystal or be formed as parallel stripes in which carrier injection electrodes on at least one surface side are disposed at required lateral intervals. The plurality of PN junction portions are designed so that a photowave is shifted from one to other between the adjacent PN junction portions, and are set to a state slightly smaller than the laser oscillation threshold value.
摘要翻译：半导体晶体包括多个双异质结结构，其中层叠相同导电类型的半导体层。多个双异质结结构是逐步形成阶梯差分的。在差动部分中，构成多个双异质结结构的有源层横向形成有提供激光振荡的PN结部分。 PN结部由倒置层形成，其中第二类型的导电体在半导体晶体的表面上的区域上扩散到台阶差分部分。形成在半导体晶体的两个表面上的载流子注入电极可以覆盖晶体的两个表面的整个表面，或者形成为平行条纹，其中至少一个表面侧的载流子注入电极以所需的横向间隔设置。多个PN结部被设计为使得光波在相邻的PN结部之间从一个移动到另一个，并且被设置为稍微小于激光振荡阈值的状态。

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