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51. 发明授权

US08114217B2 Crystallization method, crystallization apparatus, processed substrate, thin film transistor and display apparatus 失效
标题翻译：结晶方法，结晶装置，处理衬底，薄膜晶体管和显示装置
公开(公告)号：US08114217B2
公开(公告)日：2012-02-14
申请号：US12166997
申请日：2008-07-02
申请人： Masayuki Jyumonji , Hiroyuki Ogawa , Masakiyo Matsumura , Masato Hiramatsu , Yoshinobu Kimura , Yukio Taniguchi , Tomoya Kato
发明人： Masayuki Jyumonji , Hiroyuki Ogawa , Masakiyo Matsumura , Masato Hiramatsu , Yoshinobu Kimura , Yukio Taniguchi , Tomoya Kato
IPC分类号： C30B1/02
CPC分类号： H01L21/02678 , B23K26/0622 , B23K26/064 , B23K26/0648 , B23K26/066 , C30B13/24 , H01L21/02686 , H01L21/2026 , H01L27/1285 , H01L29/66757 , H01L29/78675 , Y10T117/1004 , Y10T117/1008
摘要： There are provided a crystallization method which can design laser beam having a light intensity and a distribution optimized on an incident surface of a substrate, form a desired crystallized structure while suppressing generation of any other undesirable structure area and satisfy a demand for low-temperature processing, a crystallization apparatus, a thin film transistor and a display apparatus. When crystallizing a non-single-crystal semiconductor thin film by irradiating laser beam thereto, irradiation light beam to the non-single-crystal semiconductor thin film have a light intensity with a light intensity distribution which cyclically repeats a monotonous increase and a monotonous decrease and a light intensity which melts the non-single-crystal semiconductor. Further, at least a silicon oxide film is provided on a laser beam incident surface of the non-single-crystal semiconductor film.
摘要翻译：提供了一种结晶方法，其可以设计具有在基板的入射表面上优化的光强度和分布的激光束，形成期望的结晶结构，同时抑制任何其它不希望的结构面积的产生并满足对低温加工的需求，结晶装置，薄膜晶体管和显示装置。当通过照射激光束使非单晶半导体薄膜结晶时，对非单晶半导体薄膜的照射光束具有光强度分布的光强度，其周期性地重复单调增加和单调减少，熔融非单晶半导体的光强度。此外，在非单晶半导体膜的激光入射面上至少设置氧化硅膜。

52. 发明授权

US07944024B2 Semiconductor device and manufacturing method of the same 失效
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US07944024B2
公开(公告)日：2011-05-17
申请号：US12894609
申请日：2010-09-30
申请人： Masao Kondo , Nobuyuki Sugii , Yoshinobu Kimura
发明人： Masao Kondo , Nobuyuki Sugii , Yoshinobu Kimura
IPC分类号： H01L31/117
CPC分类号： H01L29/7835 , H01L29/1054 , H01L29/165 , H01L29/6659 , H01L29/66659
摘要： A semiconductor device is provided which is capable of suppressing a reduction in electron mobility in a channel region formed in a strained silicon layer. A strained silicon layer is formed over a p type silicon-germanium layer formed over a semiconductor substrate. The strained layer has a thickness adjusted to be thicker than the critical film thickness at which no misfit dislocation occurs. Accordingly, misfit dislocations occur in the vicinity of the interface between the strained silicon layer and silicon-germanium layer.
摘要翻译：提供一种半导体器件，其能够抑制在应变硅层中形成的沟道区域中的电子迁移率的降低。在半导体衬底上形成的p型硅 - 锗层上形成应变硅层。应变层的厚度被调整为比不发生失配位错的临界膜厚度更厚。因此，失配位错发生在应变硅层和硅 - 锗层之间的界面附近。

53. 发明申请

US20090180190A1 CRYSTALLIZATION APPARATUS, OPTICAL MEMBER FOR USE IN CRYSTALLIZATION APPARATUS, CRYSTALLIZATION METHOD, MANUFACTURING METHOD OF THIN FILM TRANSISTOR, AND MANUFACTURING METHOD OF MATRIX CIRCUIT SUBSTRATE OF DISPLAY 失效
标题翻译：结晶装置，用于结晶装置的光学构件，结晶方法，薄膜晶体管的制造方法和显示器的矩阵电路基板的制造方法
公开(公告)号：US20090180190A1
公开(公告)日：2009-07-16
申请号：US12403726
申请日：2009-03-13
申请人： Yukio TANIGUCHI , Masakiyo Matsumura , Hirotaka Yamaguchi , Mikihiko Nishitani , Susumu Tsujikawa , Yoshinobu Kimura , Masayuki Jyumonji
发明人： Yukio TANIGUCHI , Masakiyo Matsumura , Hirotaka Yamaguchi , Mikihiko Nishitani , Susumu Tsujikawa , Yoshinobu Kimura , Masayuki Jyumonji
IPC分类号： G02B27/10
CPC分类号： G03B21/56 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1012
摘要： A crystallization method includes wavefront-dividing an incident light beam into a plurality of light beams, condensing the wavefront-divided light beams in a corresponding phase shift portion of a phase shift mask or in the vicinity of the phase shift portion to form a light beam having an light intensity distribution of an inverse peak pattern in which a light intensity is minimum in a point corresponding to the phase shift portion of the phase shift mask, and irradiating a polycrystalline semiconductor film or an amorphous semiconductor film with the light beam having the light intensity distribution to produce a crystallized semiconductor film.
摘要翻译：结晶方法包括将入射光束波前分割成多个光束，将波前划分的光束聚集在相移掩模的相应相移部分中或在相移部分附近以形成光束具有在与相移掩模的相移部分相对应的点中光强度最小的逆峰值图案的光强度分布，以及用具有光的光束照射多晶半导体膜或非晶半导体膜强度分布以产生结晶的半导体膜。

54. 发明申请

US20090072991A1 Gateway device allowing home network appliances to be introduced and controlled over a network and a control method therefor 有权
标题翻译：允许家庭网络设备通过网络引入和控制的网关设备及其控制方法
公开(公告)号：US20090072991A1
公开(公告)日：2009-03-19
申请号：US12230519
申请日：2008-08-29
申请人： Jun Hayashi , Takaaki Horibuchi , Mitsuharu Ozawa , Yoshinobu Kimura , Masahide Nakamura , Yusuke Fukuoka
发明人： Jun Hayashi , Takaaki Horibuchi , Mitsuharu Ozawa , Yoshinobu Kimura , Masahide Nakamura , Yusuke Fukuoka
IPC分类号： G06F13/42
CPC分类号： H04L12/2832 , H04L12/282 , H04L12/2836
摘要： A gateway device includes a base processor which converts a signal input from an IP network to a signal which can be handled by the gateway device, and a home appliance control processor having a controller which converts the signal which can be handled by the gateway device to a control signal in compliance with the communications protocol of a home appliance to be controlled. The controller stores, on a table, information about the communications protocol, driver, controllable setting condition and status of respective appliances to be controlled in association with each other. The controller also includes a conversion functional block which converts information supplied to the control information of the communications protocol of the respective appliances to be controlled on the basis of the stored information.
摘要翻译：网关装置包括：基站处理器，其将从IP网络输入的信号转换为可由网关装置处理的信号;以及家用电器控制处理器，其具有将可由网关装置处理的信号转换为符合要控制的家用电器的通信协议的控制信号。控制器在表上存储关于要相互控制的各个设备的通信协议，驱动程序，可控设置条件和状态的信息。控制器还包括转换功能块，该转换功能块根据所存储的信息转换提供给要控制的各个设备的通信协议的控制信息的信息。

55. 发明授权

US07410848B2 Crystallization method, crystallization apparatus, processed substrate, thin film transistor and display apparatus 失效
标题翻译：结晶方法，结晶装置，处理衬底，薄膜晶体管和显示装置
公开(公告)号：US07410848B2
公开(公告)日：2008-08-12
申请号：US10878331
申请日：2004-06-29
申请人： Masayuki Jyumonji , Hiroyuki Ogawa , Masakiyo Matsumura , Masato Hiramatsu , Yoshinobu Kimura , Yukio Taniguchi , Tomoya Kato
发明人： Masayuki Jyumonji , Hiroyuki Ogawa , Masakiyo Matsumura , Masato Hiramatsu , Yoshinobu Kimura , Yukio Taniguchi , Tomoya Kato
IPC分类号： H01L21/84
CPC分类号： H01L21/02678 , B23K26/0622 , B23K26/064 , B23K26/0648 , B23K26/066 , C30B13/24 , H01L21/02686 , H01L21/2026 , H01L27/1285 , H01L29/66757 , H01L29/78675 , Y10T117/1004 , Y10T117/1008
摘要： There are provided a crystallization method which can design laser beam having a light intensity and a distribution optimized on an incident surface of a substrate, form a desired crystallized structure while suppressing generation of any other undesirable structure area and satisfy a demand for low-temperature processing, a crystallization apparatus, a thin film transistor and a display apparatus. When crystallizing a non-single-crystal semiconductor thin film by irradiating laser beam thereto, irradiation light beam to the non-single-crystal semiconductor thin film have a light intensity with a light intensity distribution which cyclically repeats a monotonous increase and a monotonous decrease and a light intensity which melts the non-single-crystal semiconductor. Further, at least a silicon oxide film is provided on a laser beam incident surface of the non-single-crystal semiconductor film.
摘要翻译：提供了一种结晶方法，其可以设计具有在基板的入射表面上优化的光强度和分布的激光束，形成期望的结晶结构，同时抑制任何其它不希望的结构面积的产生并满足对低温加工的需求，结晶装置，薄膜晶体管和显示装置。当通过照射激光束使非单晶半导体薄膜结晶时，对非单晶半导体薄膜的照射光束具有光强度分布的光强度，其周期性地重复单调增加和单调减少，熔融非单晶半导体的光强度。此外，在非单晶半导体膜的激光入射面上至少设置氧化硅膜。

56. 发明授权

US07335261B2 Apparatus for forming a semiconductor thin film 有权
标题翻译：用于形成半导体薄膜的装置
公开(公告)号：US07335261B2
公开(公告)日：2008-02-26
申请号：US11198656
申请日：2005-08-05
申请人： Masakiyo Matsumura , Mikihiko Nishitani , Yoshinobu Kimura , Masayuki Jyumonji , Yukio Taniguchi , Masato Hiramatsu , Fumiki Nakano
发明人： Masakiyo Matsumura , Mikihiko Nishitani , Yoshinobu Kimura , Masayuki Jyumonji , Yukio Taniguchi , Masato Hiramatsu , Fumiki Nakano
IPC分类号： C30B1/04
CPC分类号： H01L21/02678 , B23K26/06 , B23K26/066 , B23K2101/40 , C30B1/00 , C30B13/24 , C30B29/06 , H01L21/02691 , H01L21/2026 , Y10T117/1004 , Y10T117/1008 , Y10T117/1016
摘要： Disclosed are apparatus for forming a semiconductor film having an excellent crystallinity from a non-single crystal semiconducting layer formed on a base layer made of an insulating material. The apparatus includes a light source, a homogenizer for homogenizing an intensity distribution of the emitted light, an amplitude-modulation means for performing the amplitude-modulation such that the amplitude of the light, of which the intensity distribution is homogenized, is increased in the direction of the relative motion of the light to the base layer, an optional light projection optical system for projecting the amplitude-modulated light onto the surface of the non-single crystal semiconductor such that a predetermined irradiation energy can be obtained, a phase shifter for providing a low temperature point in the surface irradiated by the light, and a substrate stage to move the light relative to the substrate thereby enabling scanning in the X and Y axis.
摘要翻译：公开了一种从由绝缘材料制成的基底层上形成的非单晶半导体层形成具有优异结晶度的半导体膜的装置。该装置包括光源，用于均匀化发射光的强度分布的均质器，用于执行调幅的幅度调制装置，使得强度分布均匀化的光的振幅在光向基层的相对运动的方向，用于将调幅光投影到非单晶半导体的表面上以使得能够获得预定的照射能量的可选的光投射光学系统，用于在由光照射的表面中提供低温点，以及衬底台，以相对于衬底移动光，从而使得能够在X和Y轴上进行扫描。

57. 发明申请

US20070266933A1 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20070266933A1
公开(公告)日：2007-11-22
申请号：US11802048
申请日：2007-05-18
申请人： Ryuta Tsuchiya , Yoshinobu Kimura , Yusuke Morita
发明人： Ryuta Tsuchiya , Yoshinobu Kimura , Yusuke Morita
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B23/00 , C30B25/00
摘要： It is an object of the present invention to provide a method of manufacturing an SOI wafer at low cost and with high yield. It is another object of the present invention to provide a semiconductor device including also bulk type MISFETs used as high voltage regions and a method of manufacturing the same without using complicated processes and increasing the size of a semiconductor chip. The method of manufacturing a semiconductor device comprises selectively epitaxially growing a single-crystal Si layer and continuously performing the epitaxial growth without bringing a substrate temperature increased during the growth to room temperature even once. An epitaxially grown surface is then etched and planarized. The substrate temperature is then cooled down to the room temperature.
摘要翻译：本发明的目的是提供一种以低成本和高产率制造SOI晶片的方法。本发明的另一个目的是提供一种半导体器件，其还包括用作高电压区域的体型型MISFET及其制造方法，而不需要使用复杂的工艺并增加半导体芯片的尺寸。制造半导体器件的方法包括选择性地外延生长单晶Si层并连续进行外延生长，而不会使基板温度在生长至室温期间增加甚至一次。然后将外延生长的表面蚀刻并平坦化。然后将衬底温度冷却至室温。

58. 发明申请

US20060283471A1 Liquid-applying device 有权
标题翻译：液体施加装置
公开(公告)号：US20060283471A1
公开(公告)日：2006-12-21
申请号：US10574706
申请日：2005-04-26
申请人： Yoshinobu Kimura , Takatoshi Saito
发明人： Yoshinobu Kimura , Takatoshi Saito
IPC分类号： A45D24/16 , A45D24/22
CPC分类号： B65D47/2018 , A45D24/16 , A45D24/22 , B65D35/36
摘要： A liquid-applying device is provided, which does not allow the contents to touch the skin of the head when the contents are applied to the hair. The volume of liquid to be discharged from this device can be controlled. The comb attachment is small and can be dismounted. After the use, inside flow passage can be closed. Even if this device is used with a tubular container having the force of recovery, the container is prevented from taking in outside air (oxygen, etc.), and thus, is protected against dust and/or bacteria in the air. The liquid-applying device comprises a tubular container, a connecting/discharging unit, and a comb attachment. The connecting/discharging unit has a cylindrical passage and a fitting cylinder that can be fitted to the neck of the tubular container. The comb attachment comprises a comb shaft fitted detachably to the connecting/discharging unit and a row of teeth disposed along one side of the comb shaft and extending laterally. At the front and the rear of the row, there is a pair of solid teeth, which sandwiches a row of liquid-applying teeth, each liquid-applying tooth having discharge ports opened at the tip. The solid teeth at the front and the rear are taller than the row of liquid-applying teeth. An inside plug is fitted to the tubular container, and the connecting cylinder of the connecting/discharging unit is used to open or close the passage holes of the inside plug. In an embodiment, a valve unit is installed inside the tubular container.
摘要翻译：提供了一种液体施加装置，当内容物施加到头发上时，不允许内容物接触头部的皮肤。可以控制从该装置排出的液体的体积。梳子附件很小，可以拆卸。使用后，内流道可以关闭。即使该装置与具有回收力的管状容器一起使用，也可防止容器吸入外部空气（氧气等），从而防止空气中的灰尘和/或细菌。液体施加装置包括管状容器，连接/排出单元和梳子附件。连接/排出单元具有圆筒形通道和可以装配到管状容器的颈部的嵌合筒。梳子附件包括可拆卸地装配到连接/排出单元的梳齿轴和沿着梳齿轴的一侧设置并横向延伸的一排齿。在行的前后，存在一对实心齿，其夹着一排液体施加齿，每个液体施加齿具有在尖端处开口的排出口。前后固体齿高于排液牙齿排。内管插入管状容器中，连接/排出单元的连接筒用于打开或关闭内塞的通孔。在一个实施例中，阀单元安装在管状容器内。

59. 发明申请

US20060197093A1 Semiconductor device including semiconductor thin films having different crystallinity, substrate of the same, and manufacturing method of the same, and liquid crystal display and manufacturing method of the same 有权
标题翻译：包括具有不同结晶度的半导体薄膜的半导体器件及其制造方法及其制造方法及其制造方法
公开(公告)号：US20060197093A1
公开(公告)日：2006-09-07
申请号：US11403938
申请日：2006-04-14
申请人： Yoshinobu Kimura , Masakiyo Matsumura , Yoshitaka Yamamoto , Mikihiko Nishitani , Masato Hiramatsu , Masayuki Jyumonji , Fumiki Nakano
发明人： Yoshinobu Kimura , Masakiyo Matsumura , Yoshitaka Yamamoto , Mikihiko Nishitani , Masato Hiramatsu , Masayuki Jyumonji , Fumiki Nakano
IPC分类号： H01L29/04 , H01L21/84
CPC分类号： H01L21/02686 , H01L21/02532 , H01L21/2026 , H01L29/66757 , H01L29/78675
摘要： A method of manufacturing a thin-film semiconductor device substrate includes a step of forming a non-single crystalline semiconductor thin film on a base layer, and an annealing step of irradiating the non-single crystalline semiconductor thin film with an energy beam to enhance crystallinity of a non-single crystalline semiconductor constituting the non-single crystalline semiconductor thin film. The annealing step includes simultaneously irradiating the non-single crystalline semiconductor thin film with a plurality of energy beams to form a plurality of unit regions each including at least one irradiated region irradiated with the energy beam and at least one non-irradiated region that is not irradiated with the energy beam.
摘要翻译：制造薄膜半导体器件衬底的方法包括在基底层上形成非单晶半导体薄膜的步骤和用能量束照射非单晶半导体薄膜以提高结晶度的退火步骤构成非单晶半导体薄膜的非单晶半导体。退火步骤包括同时用多个能量束照射非单晶半导体薄膜，以形成多个单位区域，每个单位区域包括至少一个被能量束照射的照射区域和至少一个不照射的非照射区域用能量束照射。

60. 发明授权

US07011709B2 Crystallization apparatus, optical member for use in crystallization apparatus, crystallization method, thin film transistor, and display 失效
标题翻译：结晶装置，用于结晶装置的光学构件，结晶方法，薄膜晶体管和显示器
公开(公告)号：US07011709B2
公开(公告)日：2006-03-14
申请号：US10603771
申请日：2003-06-26
申请人： Yukio Taniguchi , Masakiyo Matsumura , Hirotaka Yamaguchi , Mikihiko Nishitani , Susumu Tsujikawa , Yoshinobu Kimura , Masayuki Jyumonji
发明人： Yukio Taniguchi , Masakiyo Matsumura , Hirotaka Yamaguchi , Mikihiko Nishitani , Susumu Tsujikawa , Yoshinobu Kimura , Masayuki Jyumonji
IPC分类号： C30B29/16
CPC分类号： H01L21/0268 , B23K26/066 , B23K26/073 , C30B13/24 , C30B29/06 , H01L21/2026 , H01L29/66757 , H01L29/78675 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1012
摘要： A crystallization apparatus includes an illumination optical system to illuminate a phase shift mask and which irradiates an amorphous semiconductor film with a light beam having an intensity distribution of an inverse peak type having a smallest light intensity in a point corresponding to a phase shift portion of the phase shift mask to generate a crystallized semiconductor film. A convergence/divergence element is disposed on a light path between the illumination optical system and phase shift mask. The convergence/divergence element converts the light beam supplied from the illumination optical system into a light beam having an upward concave intensity distribution in which the light intensity is lowest in the phase shift portion and in which the light intensity increases as distant from the phase shift portion to irradiate the phase shift mask.
摘要翻译：结晶装置包括：照明光学系统，用于照亮相移掩模，并且对与非晶半导体膜的相移部分相对应的点具有具有最小光强度的具有最小光强度的反峰值强度分布的光束照射非晶半导体膜相移掩模以产生结晶的半导体膜。会聚/发散元件设置在照明光学系统和相移掩模之间的光路上。会聚/发散元件将从照明光学系统提供的光束转换为具有向上凹陷强度分布的光束，其中相位偏移部分的光强度最低，并且其中光强度远离相移部分来照射相移掩模。

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