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    • 56. 发明授权
    • CMOS image sensor providing uniform pixel exposure and method of fabricating same
    • 提供均匀像素曝光的CMOS图像传感器及其制造方法
    • US07342271B2
    • 2008-03-11
    • US11274855
    • 2005-11-16
    • Young-Hoon ParkTae-Seok Oh
    • Young-Hoon ParkTae-Seok Oh
    • H01L27/148H01L19/768H01L31/062H01L31/113
    • H01L27/14643H01L27/14609H01L27/14654H01L27/14689
    • An CMOS image sensor includes a photodiode region generating electrical charges in response to incident light received thereat. In one example, the CMOS image sensor further includes first and second transfer gates adapted to prevent or substantially prevent the electrical charges from overflowing into a floating diffusion region or a storage diffusion region located on opposite sides of the photodiode region. In this example, a read diffusion region is formed in the semiconductor substrate on an opposite side of the storage diffusion region relative to the photodiode region and a reset diffusion region is formed in the semiconductor substrate on an opposite side of the floating diffusion region relative to the photodiode region. The read diffusion region may be electrically connected to the floating diffusion region by a connection line.
    • CMOS图像传感器包括响应于在其接收的入射光而产生电荷的光电二极管区域。 在一个示例中,CMOS图像传感器还包括适于防止或基本上防止电荷溢出到位于光电二极管区域的相对侧上的浮动扩散区域或存储扩散区域的第一和第二传输门。 在这个例子中,在半导体衬底中在相对于光电二极管区域的存储扩散区的相对侧上形成读扩散区,并且在浮动扩散区相对侧的半导体衬底中形成复位扩散区 光电二极管区域。 读扩散区域可以通过连接线电连接到浮动扩散区域。