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    • 51. 发明授权
    • Light-guiding module and LED lamp using the same
    • 导光模块和LED灯使用相同
    • US07926974B2
    • 2011-04-19
    • US12331394
    • 2008-12-09
    • Shih-Hsun WungYong-Dong ChenXiao-Yu Hu
    • Shih-Hsun WungYong-Dong ChenXiao-Yu Hu
    • F21V1/06
    • F21V29/763F21K9/00F21V29/004F21V29/75F21V29/76F21V29/85F21Y2115/10
    • An LED lamp includes a heat sink, a plurality of LED modules mounted on a top of the heat sink and a plurality of light-guiding modules respectively fixed on the LED modules. The heat sink includes a base and a plurality of fins extending downwardly from the base. Each LED module includes a plurality of LEDs mounted thereon. Each light-guiding module includes a mounting bracket defining a plurality of through holes therein and a plurality of guiding units respectively received in the through holes of the mounting bracket. The guiding units are respectively in alignment with the LEDs of a corresponding LED module and receive the LEDs in lower ends thereof to reflect and guide light generated by the corresponding LED module in a predetermined manner.
    • LED灯包括散热器,安装在散热器顶部的多个LED模块和分别固定在LED模块上的多个导光模块。 散热器包括底座和从基座向下延伸的多个翅片。 每个LED模块包括安装在其上的多个LED。 每个导光模块包括在其中限定多个通孔的安装支架和分别容纳在安装支架的通孔中的多个引导单元。 引导单元分别与相应的LED模块的LED对准,并在其下端接收LED,以预定的方式反射和引导由对应的LED模块产生的光。
    • 53. 发明申请
    • Single crystal growth method for vertical high temperature and high pressure group III-V compound
    • 用于垂直高温高压组III-V化合物的单晶生长方法
    • US20120260848A1
    • 2012-10-18
    • US13443965
    • 2012-04-11
    • Zhi HeXiao-Yu Hu
    • Zhi HeXiao-Yu Hu
    • C30B11/12
    • C30B29/40C30B11/12
    • The invention discloses a single crystal growth method for a vertical high temperature and high pressure group III-V compound. A vertical high temperature and high pressure stove is capable of providing a group III element fusion zone with a temperature equal to or greater than that of a composition melting point and providing a group V element provision zone below the group III element fusion zone. The stove provides steam to the group III element fusion zone and the group V element provision zone at a temperature greater than evaporation temperature. The compound synthesis of a group III element and a group V element is completed in the group III element fusion zone, and an in-situ growth of single crystal is completed in the group III element fusion zone, thereby preventing the growth of the rich group III element and increasing the single crystal process efficiency.
    • 本发明公开了一种用于垂直高温高压III-V族化合物的单晶生长方法。 垂直高温高压炉能够提供等于或大于成分熔点温度的III族元素熔融区,并提供在III族元素熔融区下方的V族元素提供区。 炉子在大于蒸发温度的温度下,向III族元素熔融区和V族元素供应区提供蒸汽。 III族元素和V族元素的复合合成在III族元素熔融区完成,在III族元素熔融区中完成单晶的原位生长,从而防止富集的生长 III元素,提高单晶工艺效率。
    • 56. 发明申请
    • VERTICAL HIGH TEMPERATURE AND HIGH PRESSURE STOVE STRUCTURE
    • 垂直高温和高压结构
    • US20120263630A1
    • 2012-10-18
    • US13444243
    • 2012-04-11
    • Zhi HEXiao-Yu Hu
    • Zhi HEXiao-Yu Hu
    • B01J19/00
    • B01J3/042B01J2219/185C01B25/087C01G15/00C01P2006/80
    • A vertical high temperature and high pressure stove structure includes a vertically-disposed pressure vessel and a heating module disposed in the pressure vessel. The heating module includes a heating space filled with a quartz tube and sets of independent heating units. The independent heating units includes a lower protective zone heating unit, a provision zone heating unit, a synthesis zone heating unit and an upper protective zone heating unit. The synthesis zone heating unit provides a group III element fusion zone with a temperature equal to or greater than that of a composition melting point, the provision zone heating unit provides a steam having temperature greater than evaporation temperature to a group V element provision zone, and a compound synthesis of a group III element and a group V element as chemical element periodic table is rapidly completed in the group III element fusion zone.
    • 垂直高温高压炉结构包括垂直设置的压力容器和设置在压力容器中的加热模块。 加热模块包括填充有石英管和独立加热单元组的加热空间。 独立加热单元包括下保护区加热单元,供应区加热单元,合成区加热单元和上保护区加热单元。 合成区加热单元提供等于或大于成分熔点温度的III族元素熔融区,供应区加热单元向V族元素提供区提供具有大于蒸发温度的蒸汽, 在III族元素熔融区中,III族元素和V族元素作为化学元素周期表的复合合成快速完成。