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51. 发明授权

US08470763B2 Alpha-amino-N-substituted amides, pharmaceutical composition containing them and uses thereof 有权
标题翻译： α-氨基-N-取代的酰胺，含有它们的药物组合物及其用途
公开(公告)号：US08470763B2
公开(公告)日：2013-06-25
申请号：US12747485
申请日：2008-12-11
申请人： Fajun Nan , Jia Li , Jian Ding , Gang Liu , Chuanming Xie , Zehong Miao , Wanyi Tai
发明人： Fajun Nan , Jia Li , Jian Ding , Gang Liu , Chuanming Xie , Zehong Miao , Wanyi Tai
IPC分类号： C07D345/00
CPC分类号： C07C237/22 , C07C247/12 , C07C271/22 , C07C323/60 , C07C2601/02 , C07C2601/04 , C07C2601/08 , C07C2601/14 , C07C2601/16 , C07C2603/74 , C07D209/14 , C07D209/20 , C07D233/54 , C07D307/24 , C07D307/94
摘要： Disclosed are a series of α-amino-N-substituted amide compounds having a structure of the following formula, the pharmaceutically acceptable salts thereof, and the pharmaceutical composition comprising the same. The α-amino-N-substituted amide compounds or the pharmaceutically acceptable salts thereof according to the present invention have anti-tumor and/or anti-cancer activities in vivo and in vitro, can effectively depress the growth of various tumor cells and/or cancer cells, and thus can be used in preparing drugs for treating tumors and/or cancers.
摘要翻译：公开了一系列具有下式结构的α-氨基-N-取代酰胺化合物及其药学上可接受的盐，以及包含它们的药物组合物。根据本发明的α-氨基-N-取代的酰胺化合物或其药学上可接受的盐在体内和体外具有抗肿瘤和/或抗癌活性，可以有效抑制各种肿瘤细胞的生长和/或癌细胞，因此可用于制备用于治疗肿瘤和/或癌症的药物。

52. 外观设计

USD666161S1 Massage controller 有权
标题翻译：按摩控制器
公开(公告)号：USD666161S1
公开(公告)日：2012-08-28
申请号：US29374956
申请日：2011-10-31
申请人： Megan Zhu , Jian Ding , Yubo Ding
设计人： Megan Zhu , Jian Ding , Yubo Ding

53. 发明申请

US20110166172A1 Rapamycin Carbonic Ester Analogues, Pharmaceutical Compositions, Preparations and Uses Thereof 失效
标题翻译：雷帕霉素碳酸酯类似物，药物组合物，制剂及其用途
公开(公告)号：US20110166172A1
公开(公告)日：2011-07-07
申请号：US13119700
申请日：2009-09-17
申请人： Fajun Nan , Jian Ding , Jianping Zuo , Linqian Yu , Linghua Meng , Yangming Zhang , Na Yang , Min Gu
发明人： Fajun Nan , Jian Ding , Jianping Zuo , Linqian Yu , Linghua Meng , Yangming Zhang , Na Yang , Min Gu
IPC分类号： A61K31/436 , C07D267/00 , A61P35/00
CPC分类号： A61K31/436 , C07D498/18
摘要： Rapalogs of formula I, pharmaceutically acceptable salts, pharmaceutical compositions, and preparation methods and uses thereof. The rapalogs have the structure of formula I and can be used as an anti-tumor medicament. Comparing with rapamycin, the rapalogs of the present invention exhibit enhanced water solubility, and improved pharmacological and pharmacokinetic properties by introducing a hydrophilic and polar group such as a hydroxyl.
摘要翻译：式I的药学上可接受的盐，药物组合物及其制备方法和用途。 rapalogs具有式I的结构，可用作抗肿瘤药物。与雷帕霉素相比，本发明的rapalogs通过引入亲水性和极性基团如羟基表现出增强的水溶性，以及改善的药理学和药代动力学性质。

54. 发明授权

US07737040B2 Method of reducing critical dimension bias during fabrication of a semiconductor device 有权
标题翻译：在半导体器件制造期间减小临界尺寸偏压的方法
公开(公告)号：US07737040B2
公开(公告)日：2010-06-15
申请号：US11983450
申请日：2007-11-09
申请人： Christopher Dennis Bencher , Melvin Warren Montgomery , Alexander Buxbaum , Yung-Hee Yvette Lee , Jian Ding , Gilad Almogy , Wendy H. Yeh
发明人： Christopher Dennis Bencher , Melvin Warren Montgomery , Alexander Buxbaum , Yung-Hee Yvette Lee , Jian Ding , Gilad Almogy , Wendy H. Yeh
IPC分类号： H01L21/00 , H01L21/311
CPC分类号： G03F1/68 , G03F1/46 , G03F1/80
摘要： An anti-reflective hard mask layer left on a radiation-blocking layer during fabrication of a reticle provides functionality when the reticle is used in a semiconductor device manufacturing process.
摘要翻译：当在半导体器件制造工艺中使用掩模版时，在掩模版的制造期间留在辐射阻挡层上的抗反射硬掩模层提供了功能。

55. 发明授权

US07682518B2 Process for etching a metal layer suitable for use in photomask fabrication 有权
标题翻译：用于蚀刻适用于光掩模制造的金属层的工艺
公开(公告)号：US07682518B2
公开(公告)日：2010-03-23
申请号：US11616990
申请日：2006-12-28
申请人： Madhavi R. Chandrachood , Nicole Sandlin , Yung-Hee Yvette Lee , Jian Ding
发明人： Madhavi R. Chandrachood , Nicole Sandlin , Yung-Hee Yvette Lee , Jian Ding
IPC分类号： C03C15/00
CPC分类号： C03C17/06 , C03C2217/26 , C03C2218/33 , C03C2218/34 , C23F4/00 , G03F1/54 , G03F1/80 , H01J37/321 , H01J2237/3341
摘要： Method and apparatus for etching a metal layer disposed on a substrate, such as a photolithographic reticle, are provided. In one aspect, a method is provided for processing a substrate including positioning a substrate having a metal layer disposed on an optically transparent material in a processing chamber, introducing a processing gas processing gas comprising an oxygen containing gas, a chlorine containing gas, and a chlorine-free halogen containing gas, and optionally, an inert gas, into the processing chamber, generating a plasma of the processing gas in the processing chamber, and etching exposed portions of the metal layer disposed on the substrate.
摘要翻译：提供了用于蚀刻设置在诸如光刻掩模之类的基板上的金属层的方法和设备。一方面，提供了一种处理基板的方法，包括：将具有设置在处理室中的光学透明材料上的金属层的基板定位，引入包含含氧气体，含氯气体和将含氯气体的无卤素气体和任选的惰性气体加入到处理室中，在处理室中产生处理气体的等离子体，并蚀刻设置在基板上的金属层的暴露部分。

56. 发明申请

US20090179146A1 FLUIDICS DEVICE 有权
标题翻译：流体装置
公开(公告)号：US20090179146A1
公开(公告)日：2009-07-16
申请号：US11915151
申请日：2006-01-19
申请人： Lee O. Lomas , Jian Ding , Egisto Boschetti
发明人： Lee O. Lomas , Jian Ding , Egisto Boschetti
IPC分类号： B01D59/44 , B01D57/02 , B01D15/08 , C40B60/12
CPC分类号： G01N30/461 , B01D15/325 , B01D15/362 , B01D15/363 , B01L3/5025 , B01L3/50255 , B01L3/563 , B01L2200/026 , B01L2200/028 , B01L2300/0681 , B01L2300/0829 , B01L2300/087 , B01L2400/0487 , C07K1/34 , G01N27/44704 , G01N27/44795 , G01N30/466 , G01N30/468 , Y10T137/2224 , Y10T137/794 , Y10T137/86187 , Y10T436/255
摘要： The present invention contemplates various devices that are configured to separate a sample, which contains more than one unique species, into any desired number of sub-samples by passing the sample across a like number of separation media configured for a first separation protocol. Each of the sub-samples may be further separated by an additional separation protocol, thereby creating a plurality of mini-samples, each of which may be further separated and/or analyzed. The invention also contemplates using a simple method of using conduits to form a fluid path that passes through a plurality of separation media, each of which media is configured to isolate a particular sub-sample. After various sub-samples of the sample are isolated by the various separation media, the conduits may be removed, thereby enabling each of the isolated sub-samples to be further separated and/or analyzed independent of any other sub-sample.
摘要翻译：本发明考虑了通过将样品穿过配置用于第一分离方案的相似数量的分离介质，将被配置成将含有多于一种独特物种的样品分离成任何所需数量的子样品的各种装置。每个子样品可以通过另外的分离方案进一步分离，从而产生多个微型样品，每个小样品可进一步分离和/或分析。本发明还考虑使用简单的方法来使用导管来形成通过多个分离介质的流体路径，其中每个介质被配置为隔离特定的子样品。在通过各种分离介质分离样品的各种亚样品之后，可以去除导管，从而使每个分离的子样品能够独立于任何其它亚样品进一步分离和/或分析。

57. 发明授权

US07541463B2 Sulfur-containing naphthalimide derivatives 失效
标题翻译：含硫萘酰亚胺衍生物
公开(公告)号：US07541463B2
公开(公告)日：2009-06-02
申请号：US11263591
申请日：2005-10-31
申请人： Xuhong Qian , Yonggang Li , Yufang Xu , Jian Ding , Liping Lin , Zehong Miao , Hong Zhu , Baoyuan Qu
发明人： Xuhong Qian , Yonggang Li , Yufang Xu , Jian Ding , Liping Lin , Zehong Miao , Hong Zhu , Baoyuan Qu
IPC分类号： A61K31/4365 , C07D221/18 , C07D471/06
CPC分类号： C07D495/06 , C07D221/14 , C07D405/12 , C07D513/06 , C09B57/08 , C09B69/102 , C09B69/109
摘要： The invention discloses novel sulfur-containing naphthalimide derivatives, and the preparation and uses thereof. The conjugated plane of naphthalimide derivatives of the invention is enlarged by incorporating 5-or 6-membered heteroaromatic ring and/or introducing S heteroatom, thus increasing the anti-tumor activity of naphthalimide. The compounds of the invention displays significant inhibiting activities to the proliferation of various tumor cells such as human lung cancer, gastric cancer, liver cancer, leucocythemia and the like. The inhibition of cell proliferation is dose-dependent.
摘要翻译：本发明公开了新型含硫萘二甲酰亚胺衍生物及其制备及应用。本发明的萘二甲酰亚胺衍生物的共轭平面通过掺入5-或6-元杂芳环和/或引入S杂原子而增大，从而增加了萘二甲酰亚胺的抗肿瘤活性。本发明化合物对人肺癌，胃癌，肝癌，白细胞增多症等各种肿瘤细胞的增殖具有显着的抑制活性。细胞增殖的抑制是剂量依赖性的。

58. 发明申请

US20050153564A1 Integrated phase angle and optical critical dimension measurement metrology for feed forward and feedback process control 有权
标题翻译：用于前馈和反馈过程控制的集成相位角和光学关键尺寸测量计量
公开(公告)号：US20050153564A1
公开(公告)日：2005-07-14
申请号：US10754321
申请日：2004-01-09
申请人： Alfred Mak , Yung-Hee Lee , Cynthia Brooks , Melisa Buie , Turgut Sahin , Jian Ding
发明人： Alfred Mak , Yung-Hee Lee , Cynthia Brooks , Melisa Buie , Turgut Sahin , Jian Ding
IPC分类号： G03F1/00 , H01L21/302 , H01L21/461
CPC分类号： G03F1/32 , G03F1/30
摘要： Methods and apparatus for controlling the critical dimensions and monitoring the phase shift angles of photomasks. Critical dimensions measurement data before wafer processing and after wafer processing are collected by an integrated metrology tool to adjust the process recipe, to determine if the critical dimensions are in specification and to determine if additional etching is required. Phase shift angle and uniformity across substrate measurement after wafer processing are collected by an integrated metrology tool to determine if the phase shift angle and its uniformity are in specification. The real time process recipe adjustment and determination if additional etching is requires allow tightening of the process control. The phase shift angle and uniformity monitoring allows in-line screening of phase shift photomasks.
摘要翻译：用于控制关键尺寸和监测光掩模相移角的方法和装置。晶圆处理之前和晶片处理后的关键尺寸测量数据由集成计量工具收集，以调整工艺配方，以确定临界尺寸是否在规范中，并确定是否需要额外的蚀刻。晶圆处理后的基板测量的相移角和均匀度由集成计量工具收集，以确定相移角及其均匀性是否在规范中。如果需要额外的蚀刻，则实时处理配方调整和确定允许过程控制的紧固。相移角和均匀性监测允许在线筛选相移光掩模。

59. 发明授权

US06307068B1 Artemisinin derivatives, method for the preparation thereof and pharmaceutical compositions containing the same 失效
标题翻译：青蒿素衍生物，其制备方法和含有它们的药物组合物
公开(公告)号：US06307068B1
公开(公告)日：2001-10-23
申请号：US09719767
申请日：2000-12-14
申请人： Ying Li , Feng Shan , Jin Ming Wu , Guangshao Wu , Jian Ding , Jianxian Han , Ghanem Atassi , Pierre Renard
发明人： Ying Li , Feng Shan , Jin Ming Wu , Guangshao Wu , Jian Ding , Jianxian Han , Ghanem Atassi , Pierre Renard
IPC分类号： C07D49318
CPC分类号： C07D493/18 , C07D493/20
摘要： The invention relates to compound of the general formula (I): R—O—A (I) wherein: R represents the radical of formula (II): A is as defined in the description, and medicinal products containing the same which are useful in treating or in preventing cancer.
摘要翻译：本发明涉及通式（I）的化合物：其中：R表示式（II）的基团：A如说明书中所定义，含有该化合物可用于治疗或预防癌症的药物。

60. 发明授权

US06238588B1 High pressure high non-reactive diluent gas content high plasma ion density plasma oxide etch process 失效
标题翻译：高压高反应性稀释气体含量高等离子体离子密度等离子体氧化物蚀刻工艺
公开(公告)号：US06238588B1
公开(公告)日：2001-05-29
申请号：US08733554
申请日：1996-10-21
申请人： Kenneth Collins , David Groechel , Raymond Hung , Michael Rice , Gerald Yin , Jian Ding , Chunshi Cui
发明人： Kenneth Collins , David Groechel , Raymond Hung , Michael Rice , Gerald Yin , Jian Ding , Chunshi Cui
IPC分类号： B44C122
CPC分类号： H01L21/02063 , C23C16/517 , H01F2029/143 , H01J37/32082 , H01J37/321 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01J37/32871 , H01J2237/3343 , H01J2237/3345 , H01J2237/3346 , H01L21/31116 , H01L21/6831
摘要： The invention is embodied in a method of processing a semiconductor workpiece in a plasma reactor chamber, including supplying a polymer and etchant precursor gas containing at least carbon and fluorine into the chamber at a first flow rate sufficient of itself to maintain a gas pressure in the chamber in a low pressure range below about 20 mT, supplying a relatively non-reactive gas into the chamber at second flow rate sufficient about one half or more of the total gas flow rate into the chamber, in combination with the first flow rate of the precursor gas, to maintain the gas pressure in the chamber in a high pressure range above 20 mT, and applying plasma source power into the chamber to form a high ion density plasma having an ion density in excess of 1010 ions per cubic centimeter. In one application of the invention, the workpiece includes an oxygen-containing overlayer to be etched by the process and a non-oxygen-containing underlayer to be protected from etching, the precursor gas dissociating in the plasma into fluorine-containing etchant species which etch the oxygen-containing layer and carbon-containing polymer species which accumulate on the non-oxygen-containing underlayer. Alternatively, the high pressure range may be defined as a pressure at which the skin depth of the inductive field exceeds {fraction (1/10)} of the gap between the inductive antenna and the workpiece.
摘要翻译：本发明体现在一种在等离子体反应器室中处理半导体工件的方法，包括以足以自动维持气体压力的第一流量将至少含有碳和氟的聚合物和蚀刻剂前体气体供应到室中在低于大约20mT的低压范围内，将第二流量的第二流量的相对非反应性气体供应到室内的总气体流速的约一半以上，并与第一流量将气体压力保持在高于20mT的高压范围内，并将等离子体源功率施加到腔室中以形成离子密度超过每立方厘米1010离子的高离子密度等离子体。在本发明的一个应用中，工件包括通过该方法蚀刻的含氧覆层和不受蚀刻保护的非含氧底层，前体气体在等离子体中解离成含氟蚀刻剂，其蚀刻含氧层和积聚在非含氧底层上的含碳聚合物种类。或者，高压范围可以被定义为感应场的趋肤深度超过感应天线和工件之间的间隙的{分数（1/10）}的压力。

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