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51. 发明授权

US07315098B2 Linear oscillator and electrically driven toothbrush 有权
标题翻译：线性振荡器和电动牙刷
公开(公告)号：US07315098B2
公开(公告)日：2008-01-01
申请号：US10472188
申请日：2002-03-27
申请人： Tomohiro Kunita , Yoshihiro Kitamura , Hidekazu Yabuuchi , Hiroki Inoue , Masayuki Suzuki , Tomohiro Izumi , Tomio Yamada , Katsuhiro Hirata , Yasushi Arikawa , Yoshitaka Ichii
发明人： Tomohiro Kunita , Yoshihiro Kitamura , Hidekazu Yabuuchi , Hiroki Inoue , Masayuki Suzuki , Tomohiro Izumi , Tomio Yamada , Katsuhiro Hirata , Yasushi Arikawa , Yoshitaka Ichii
IPC分类号： A61C17/16 , A61C17/34 , H02K33/04 , H02K33/00
CPC分类号： H02K33/08 , A61C17/3445 , B26B19/282 , H02K33/04 , H02P25/032
摘要： A linear oscillator and an electric toothbrush capable of emitting a low noise and of being assembled compact are provided. The linear oscillator, which reciprocates a shaft in an axial direction thereof, includes a plunger movable together with the shaft in the axial direction of the shaft, an elastic member for applying an axially acting resilient force to the plunger, an electromagnetic driving unit operable to reciprocate the plunger in the axial direction of the shaft at a resonant frequency when an alternating current is supplied thereto, and a fixing member restricting rotation of the plunger about an axis thereof within a predetermined angle. The electric toothbrush includes the linear oscillator and a brush head attached to the shaft for use in brushing teeth.
摘要翻译：提供了能够发出低噪声并且被组装成紧凑的线性振荡器和电动牙刷。使轴在其轴向往复运动的线性振荡器包括可沿着轴的轴向与轴一起移动的柱塞，用于向柱塞施加轴向作用的弹性力的弹性构件，可操作以当提供交流电时，柱塞在轴的轴向以谐振频率往复运动;以及固定构件，其限制柱塞绕其轴线旋转预定角度。电动牙刷包括线性振荡器和附接到轴的刷头，用于刷牙。

52. 发明授权

US07306751B2 Crystalline superfine particles, complex material, method of manufacturing crystalline superfine particles, inverted micelles, inverted micelles enveloping precursor superfine particles, inverted micelles enveloping crystalline superfine particles, and precursor superfine particles 失效
标题翻译：结晶超细颗粒，复合材料，制造结晶超细颗粒的方法，倒置胶束，倒置胶束包封前体超微粒，反胶束包封结晶超细颗粒和前体超细颗粒
公开(公告)号：US07306751B2
公开(公告)日：2007-12-11
申请号：US11490069
申请日：2006-07-21
申请人： Hiroki Naito , Yuichi Ishida , Masayuki Suzuki , Keiko Furukawa , Katsuyuki Hironaka
发明人： Hiroki Naito , Yuichi Ishida , Masayuki Suzuki , Keiko Furukawa , Katsuyuki Hironaka
IPC分类号： C09K11/64 , C09K11/55
CPC分类号： C09K11/7792 , B82Y30/00 , C09K11/025 , C09K11/7734 , D01F1/04 , Y10S977/811 , Y10S977/834 , Y10T428/2982 , Y10T428/2991 , Y10T428/2993 , Y10T428/2998
摘要： Crystalline superfine particles capable of emitting light depending upon a time-rate-of-change of a stress and controlled in grain size in the range from 5 nm to 100 nm are complexed with another material such as resin. The crystalline superfine particles are manufactured by using aggregates of molecules, i.e. inverted micelles, which orient hydrophilic groups of surfactant molecules inward and hydrophobic groups outward in a nonpolar solvent and which contain metal ions of a metal for forming the crystalline superfine particles dissolved in water inside the inverted micelles. Alternatively, they are manufactured by using inverted micelles enveloping precursor superfine particles, in which precursor superfine particles are enveloped in water inside the inverted micelles. The crystalline superfine particles are excellent in dispersibility in another material to be complexed, enhanced in emission efficiency and usable to make a transparent stress emission material. The complex material obtained is used to manufacture artificial light-emitting hair structures, artificial light-emitting skin, artificial light-emitting bodies, artificial light-emitting fabrics, and others.
摘要翻译：能够根据应力的变化时间变化发光并在5nm〜100nm的范围内控制晶粒尺寸的结晶超微粒与另一种材料如树脂复合。结晶超细颗粒通过使用分子的聚集体即反胶束来制造，所述分子将表面活性剂分子的亲水基团向内取向，并且疏水基团在非极性溶剂中向外定向并且含有金属的金属离子，以形成溶解在水中的结晶超细颗粒反胶束。或者，它们通过使用反胶束包封前体超细颗粒来制造，其中前体超细颗粒被包封在反胶束内的水中。结晶超细颗粒在另一种复合材料中的分散性优异，发光效率提高，可用于制造透明应力发射材料。所得的复合材料用于制造人造发光毛发结构，人造发光皮，人造发光体，人造发光织物等。

53. 发明申请

US20070184603A1 Method of fabricating semiconductor integrated circuit device 有权
标题翻译：制造半导体集成电路器件的方法
公开(公告)号：US20070184603A1
公开(公告)日：2007-08-09
申请号：US11783187
申请日：2007-04-06
申请人： Shinji Nishihara , Shuji Ikeda , Naotaka Hashimoto , Hiroshi Momiji , Hiromi Abe , Shinichi Fukada , Masayuki Suzuki
发明人： Shinji Nishihara , Shuji Ikeda , Naotaka Hashimoto , Hiroshi Momiji , Hiromi Abe , Shinichi Fukada , Masayuki Suzuki
IPC分类号： H01L21/8238
CPC分类号： H01L21/823814 , C23C14/16 , C23C14/3414 , H01L21/28518 , H01L21/2855 , H01L21/31608 , H01L21/76229 , H01L21/76828 , H01L21/823835 , H01L21/823842 , H01L21/823871 , H01L23/53223 , H01L29/456 , H01L29/4933 , H01L29/665 , H01L29/6656 , H01L29/6659 , H01L29/7833 , H01L2924/0002 , H01L2924/00
摘要： A Co silicide layer having a low resistance and a small junction leakage current is formed on the surface of the gate electrode, source and drain of MOSFETS by silicidizing a Co film deposited on a main plane of a wafer by sputtering using a high purity Co target having a Co purity of at least 99.99% and Fe and Ni contents of not greater than 10 ppm, preferably having a Co purity of 99.999%.
摘要翻译：在MOSFET的栅电极，源极和漏极的表面上形成具有低电阻和小的漏电流的Co硅化物层，通过使用高纯度Co靶溅射沉积在晶片的主平面上的Co膜， Co纯度至少为99.99％，Fe和Ni含量不大于10ppm，Co的纯度优选为99.999％。

54. 发明授权

US07213922B2 Projector 有权
标题翻译：投影机
公开(公告)号：US07213922B2
公开(公告)日：2007-05-08
申请号：US11043465
申请日：2005-01-27
申请人： Masayuki Suzuki , Mamoru Kobayashi
发明人： Masayuki Suzuki , Mamoru Kobayashi
IPC分类号： G03B21/26 , G03B21/28 , G02F1/1335 , G02F1/00 , H04N5/74 , H04N9/69 , H04N5/52 , H04N5/57 , H04N5/58 , G02B27/12 , G09G3/30
CPC分类号： H04N9/3105
摘要： Aspects of the invention provide a projector capable of comparatively easily achieving a contrast ratio higher than the original contrast ratio of the liquid-crystal light valve by a simple mechanism. The illumination light modulated by liquid-crystal light valves, i.e., image light, can be combined together in a cross dichroic prism, and then light intensity of suitable pixels is reduced by a proper amount by a liquid-crystal light valve, and then sent to a projection lens. The image light entering the projection lens can be projected to a projection surface. Because the light intensity of the image light formed by the liquid-crystal light valves is appropriately attenuated at suitable pixel areas by the liquid-crystal light valve, image light projection with a contrast ratio exceeding by far the contrast ratio achievable by the liquid-crystal light valves alone is possible due to cumulative light-intensity adjustment.
摘要翻译：本发明的一个方面提供一种能够通过简单的机构相对容易地实现比液晶光阀的原始对比度高的对比度的投影仪。由液晶光阀调制的照明光，即图像光可以在十字分色棱镜中组合在一起，然后通过液晶光阀将适当像素的光强度降低适当的量，然后发送投影透镜。进入投影透镜的图像光可以投影到投影面。由于由液晶光阀形成的图像光的光强度在适当的像素区域被液晶光阀适当地衰减，所以对比度超过液晶可实现的对比度的图像光投射由于累积的光强度调节，单独的光阀是可能的。

55. 发明申请

US20070087605A1 Connector 有权
公开(公告)号：US20070087605A1
公开(公告)日：2007-04-19
申请号：US11557430
申请日：2006-11-07
申请人： Masayuki Suzuki , Jun-ichi Watanabe
发明人： Masayuki Suzuki , Jun-ichi Watanabe
IPC分类号： H01R13/15
CPC分类号： H01R12/592 , H01R12/57 , H01R12/774 , H01R12/79 , H01R12/88 , H01R2201/04 , H01R2201/16
摘要： A connector includes contacts each having a contact portion, an elastic portion and a fulcrum portion between the contact portion and a connection portion, and a pressure receiving portion; a housing fixing the contacts; and a slider having urging portions pivotally moved between the connection and pressure receiving portions of the contacts to urging the contact portions against the circuit board, thereby achieving reliable connection and miniaturization of the connector. In an aspect, the housing is formed on the side of a board insertion opening with a recessed portion for conducting the board. In another aspect, the contact includes upper and lower contact portions one above the other arranged alternately staggered so as to be connected to a circuit board having contact portions alternately staggered, so that no defective connection occurs, even if the circuit board is inserted erroneously upside down. In a further aspect, the connector further includes locking members having an engaging portion which engages an anchoring portion of the circuit board to prevent the circuit board from being removed. In one aspect, contacts of two kinds are inserted into the housing from opposite sides, respectively so that these contacts of the two kinds are into contact with the contact portions on respective surfaces of the circuit board. In a further aspect, moreover, a plate-shaped piece is provided in opposition to the contact portions of the contacts to prevent the housing from being deformed.

56. 发明授权

US07204005B2 Manufacturing method of endless metal belt and manufacturing apparatus of endless metal belt 失效
标题翻译：环形金属带的制造方法和无端金属带的制造装置
公开(公告)号：US07204005B2
公开(公告)日：2007-04-17
申请号：US10644087
申请日：2003-08-20
申请人： Ryuji Fukada , Mitsutaka Akutsu , Masayuki Suzuki , Masaaki Yoshitome
发明人： Ryuji Fukada , Mitsutaka Akutsu , Masayuki Suzuki , Masaaki Yoshitome
IPC分类号： B23Q17/00 , B21D15/00
CPC分类号： B21B5/00 , B21D53/14 , Y10T29/49764 , Y10T29/49771
摘要： A manufacturing method of an endless metal belt having metal rings built up and differing in circumference, includes the following steps of: a first circumference correction step of expanding each of the metal rings; and a second circumference correction step of expanding each of the metal rings after conducting a solution heat treatment to the expanded metal ring. In the manufacturing method, by executing the first circumference correction step and the second circumference correction step before and after the solution heat treatment, respectively, an expansion quantity for setting a circumference of each of the metal rings to become a predetermined length is attained.
摘要翻译：一种环形金属带的制造方法，其具有建立并且周长不同的金属环，包括以下步骤：使每个金属环膨胀的第一周期校正步骤; 以及第二周期校正步骤，在对所述扩展金属环进行固溶热处理之后使每个所述金属环膨胀。在制造方法中，通过分别在固溶热处理前后进行第一周长校正工序和第二周期校正工序，可以获得将各金属环的周长设定为规定长度的膨胀量。

57. 发明申请

US20070004163A1 Method for fabricating semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US20070004163A1
公开(公告)日：2007-01-04
申请号：US11519907
申请日：2006-09-13
申请人： Shinichi Fukada , Naotaka Hashimoto , Masanori Kojima , Hiroshi Momiji , Hiromi Abe , Masayuki Suzuki
发明人： Shinichi Fukada , Naotaka Hashimoto , Masanori Kojima , Hiroshi Momiji , Hiromi Abe , Masayuki Suzuki
IPC分类号： H01L21/331
CPC分类号： H01L29/6659 , H01L21/2652 , H01L21/28518 , H01L21/823814 , H01L21/823835 , H01L21/823842 , H01L29/665 , H01L29/66545 , H01L29/7833
摘要： An implantation step of a dopant ion for forming source and drain regions (S and D) is divided into one implantation of a dopant ion for forming a p/n junction with a well region (3), and one implantation of a dopant ion that does not influence a position of the p/n junction between the source and drain regions (S and D) and the well region with a shallow implantation depth and a large implantation amount. After conducting an activation heat treatment of the dopant, a surface of the source/drain region is made into cobalt silicide 12, so that the source/drain region (S and D) can have a low resistance, and a p/n junction leakage can be reduced.
摘要翻译：用于形成源区和漏区（S和D）的掺杂剂离子的注入步骤被划分为用于与阱区（3）形成ap / n结的掺杂剂离子的一次注入，并且一次注入掺杂剂离子不影响源极和漏极区域（S和D）之间的p / n结的位置以及具有浅的注入深度和大的注入量的阱区域。在对掺杂剂进行激活热处理之后，将源极/漏极区域的表面制成硅化钴12，使得源极/漏极区域（S和D）可以具有低电阻，并且ap / n结泄漏可以减少

58. 外观设计

USD531126S1 Electric connector 有权
公开(公告)号：USD531126S1
公开(公告)日：2006-10-31
申请号：US29253671
申请日：2006-02-09
申请人： Masayuki Suzuki , Kazuhiro Sato , Yuuki Nakano , Issey Miyake
设计人： Masayuki Suzuki , Kazuhiro Sato , Yuuki Nakano , Issey Miyake

59. 外观设计

USD529076S1 Image drum cartridge 有权
公开(公告)号：USD529076S1
公开(公告)日：2006-09-26
申请号：US29232693
申请日：2005-06-21
申请人： Atsushi Kobayashi , Shigenori Koido , Masayuki Suzuki , Yasushi Nakasone , Tetsuji Kojima , Tetsu Koyama , Shinichi Otani , Takanori Mimura
设计人： Atsushi Kobayashi , Shigenori Koido , Masayuki Suzuki , Yasushi Nakasone , Tetsuji Kojima , Tetsu Koyama , Shinichi Otani , Takanori Mimura

60. 发明授权

US07094642B2 Method of fabricating semiconductor device 有权
公开(公告)号：US07094642B2
公开(公告)日：2006-08-22
申请号：US11110693
申请日：2005-04-21
申请人： Shinichi Fukada , Naotaka Hashimoto , Masanori Kojima , Hiroshi Momiji , Hiromi Abe , Masayuki Suzuki
发明人： Shinichi Fukada , Naotaka Hashimoto , Masanori Kojima , Hiroshi Momiji , Hiromi Abe , Masayuki Suzuki
IPC分类号： H01L21/8238
CPC分类号： H01L29/6659 , H01L21/2652 , H01L21/28518 , H01L21/823814 , H01L21/823835 , H01L21/823842 , H01L29/665 , H01L29/66545 , H01L29/7833
摘要： An implantation step of a dopant ion for forming source and drain regions (S and D) is divided into one implantation of a dopant ion for forming a p/n junction with a well region (3), and one implantation of a dopant ion that does not influence a position of the p/n junction between the source and drain regions (S and D) and the well region with a shallow implantation depth and a large implantation amount. After conducting an activation heat treatment of the dopant, a surface of the source/drain region is made into cobalt silicide 12, so that the source/drain region (S and D) can have a low resistance, and a p/n junction leakage can be reduced.

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