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51. 发明授权

US5263040A Strained quantum well laser diode 失效
标题翻译：应变量子阱激光二极管
公开(公告)号：US5263040A
公开(公告)日：1993-11-16
申请号：US902213
申请日：1992-06-22
申请人： Toshiro Hayakawa
发明人： Toshiro Hayakawa
IPC分类号： H01L21/20 , H01L33/06 , H01L33/14 , H01L33/16 , H01L33/24 , H01L33/30 , H01L33/40 , H01L33/62 , H01S5/00 , H01S5/042 , H01S5/32 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/34 , H01S5/32 , H01S5/3403 , H01S5/34313 , H01S5/3432
摘要： A strained quantum well laser diode in which higher reliability is achieved by reducing the degrading effects of stress. By using an active layer orientation that is equal or close to (111), it is possible to suppress degradation caused by stress, which acts in a direction parallel to the quantum well layer.

52. 发明授权

US5260959A Narrow beam divergence laser diode 失效
标题翻译：窄光束发散激光二极管
公开(公告)号：US5260959A
公开(公告)日：1993-11-09
申请号：US902212
申请日：1992-06-22
申请人： Toshiro Hayakawa
发明人： Toshiro Hayakawa
IPC分类号： H01S5/00 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/34313 , H01S2301/18 , H01S5/3421
摘要： A high efficiency laser diode that has a narrow beam divergence in a direction perpendicular with respect to the substrate, and a low threshold current.
摘要翻译：在与衬底垂直的方向上具有窄光束发散的低效率激光二极管和低阈值电流。

53. 发明授权

US07466498B2 Exposure device 有权
标题翻译：曝光装置
公开(公告)号：US07466498B2
公开(公告)日：2008-12-16
申请号：US10807404
申请日：2004-03-24
申请人： Kenichi Saito , Toshiro Hayakawa , Kenji Matsumoto , Yoshinori Morimoto
发明人： Kenichi Saito , Toshiro Hayakawa , Kenji Matsumoto , Yoshinori Morimoto
IPC分类号： G02B9/08
CPC分类号： G21K1/02
摘要： In an exposure device, a beam emitted from a light emitting point of a laser diode (LD) is limited by a slit. The slit limits a light beam in a direction orthogonal to an active layer of the LD. The exposure device has a moving mechanism which moves a plate in which the slit is provided, in a direction orthogonal to the plate. Object points are different at a beam and at flare light. Therefore, the plate is provided in a vicinity of the light emitting point in order to limit the light beam in the vicinity of the light emitting point, i.e., at a place near a point where a beam spot is smallest, and to be able to effectively block only the flare light.
摘要翻译：在曝光装置中，从激光二极管（LD）的发光点发射的光束被狭缝限制。狭缝在与LD的有源层正交的方向上限制光束。曝光装置具有沿着与板正交的方向移动设置有狭缝的板的移动机构。物体点在光束和耀斑光下是不同的。因此，为了将光束限制在发光点附近，即在光斑最近点附近的位置，光盘设置在发光点附近，能够有效阻挡耀斑光。

54. 发明授权

US06977780B2 Image exposure device and laser exposure device applied thereto 失效
标题翻译：图像曝光装置和应用于其的激光曝光装置
公开(公告)号：US06977780B2
公开(公告)日：2005-12-20
申请号：US10329762
申请日：2002-12-27
申请人： Kenji Matsumoto , Toshiro Hayakawa , Yoshinori Morimoto , Kiichi Kato
发明人： Kenji Matsumoto , Toshiro Hayakawa , Yoshinori Morimoto , Kiichi Kato
IPC分类号： G03B27/42 , G02B13/18
CPC分类号： G03B27/42
摘要： When a ratio R between a total angle φ of a widening angle in a median intensity of light of a light source (a GaN based semiconductor laser) and a total angle 2/φ of a widening angle of light defining a numerical aperture NA of a collimator optical system (collimator lens) is defined as R=(sin−1NA)×2/φ, the numerical aperture of the collimator optical system (collimator lens) is set so that 2.0≧R≧0.58. Thus, an image exposure device is provided that can suppress stray light of a light source that emits a large amount of stray light.
摘要翻译：当光源（GaN基半导体激光器）的中值光强度中的加宽角的总角度φi与限定数值孔径NA的光的加宽角的总角度2 / phi之间的比率R 准直器光学系统（准直透镜）被定义为R =（sin -1）NA）×2 / phi，准直器光学系统（准直透镜）的数值孔径被设定为使得2.0> = R> = 0.58。因此，提供能够抑制发出大量杂散光的光源的杂散光的图像曝光装置。

55. 发明授权

US06876688B1 Semiconductor laser and method of manufacturing the same 失效
标题翻译：半导体激光器及其制造方法
公开(公告)号：US06876688B1
公开(公告)日：2005-04-05
申请号：US09315068
申请日：1999-05-20
申请人： Toshiro Hayakawa , Toshiaki Fukunaga , Mitsugu Wada
发明人： Toshiro Hayakawa , Toshiaki Fukunaga , Mitsugu Wada
IPC分类号： H01S5/00 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/32 , H01S5/323 , H01S5/34 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/20 , H01S5/2004 , H01S5/22 , H01S5/2214 , H01S5/2231 , H01S5/3213 , H01S5/32333 , H01S5/3407 , H01S5/343 , H01S5/3434 , H01S5/3436
摘要： A semiconductor laser has an active region which includes at least a quantum well layer and upper and lower optical waveguide layers and is of InxGa1−xAsyP1−y (0≦x≦1, 0≦y≦1). Upper and lower AlGaAs cladding layers are formed on opposite sides of the active region. At least one of the optical waveguide layers is not smaller than 0.25 μm in thickness, and a part of the upper cladding layer on the upper optical waveguide layer is selectively removed up to the interface of the upper cladding layer and the upper optical waveguide layer.
摘要翻译：半导体激光器具有至少包括量子阱层和上下光波导层并且为In x Ga 1-x As y P 1-y（0≤x≤1,0<= y <1）的有源区。上，下AlGaAs覆层形成在有源区的相对侧上。至少一个光波导层的厚度不小于0.25μm，并且上光波导层上的上包层的一部分被选择性地去除到上包层和上光波导层的界面。

56. 发明授权

US06798804B2 Laser apparatus including surface-emitting semiconductor excited with semiconductor laser element, and directly modulated 有权
标题翻译：激光设备包括用半导体激光元件激发的表面发射半导体，并直接调制
公开(公告)号：US06798804B2
公开(公告)日：2004-09-28
申请号：US09779586
申请日：2001-02-09
申请人： Toshiro Hayakawa
发明人： Toshiro Hayakawa
IPC分类号： H01S500
CPC分类号： H01S5/183 , H01S3/1062 , H01S5/0207 , H01S5/02248 , H01S5/041 , H01S5/06213 , H01S5/0683 , H01S5/141 , H01S5/2036 , H01S2301/166
摘要： A laser apparatus includes a semiconductor laser element, a surface-emitting semiconductor element including a first mirror, a second mirror, and a modulation unit. The semiconductor laser element emits first laser light having a first wavelength. The surface-emitting semiconductor element is excited with the first laser light, emits second laser light having a second wavelength which is longer than the first wavelength. The first mirror in the surface-emitting semiconductor element is arranged on one side of the first active layer. The second mirror is arranged outside the surface-emitting semiconductor element so that the first and second mirrors form a resonator in which the second laser light resonates. The modulation unit modulates the surface-emitting semiconductor element.
摘要翻译：激光装置包括半导体激光元件，包括第一反射镜，第二反射镜和调制单元的表面发射半导体元件。半导体激光元件发射具有第一波长的第一激光。表面发射半导体元件被第一激光激发，发射具有比第一波长长的第二波长的第二激光。表面发射半导体元件中的第一反射镜布置在第一有源层的一侧。第二反射镜布置在表面发射半导体元件的外部，使得第一和第二反射镜形成第二激光共振的谐振器。调制单元调制表面发射半导体元件。

57. 发明授权

US5917577A Image exposing device 失效
标题翻译：图像曝光装置
公开(公告)号：US5917577A
公开(公告)日：1999-06-29
申请号：US971296
申请日：1997-11-17
申请人： Yoshiharu Okino , Toshiro Hayakawa , Takuya Yokokawa
发明人： Yoshiharu Okino , Toshiro Hayakawa , Takuya Yokokawa
IPC分类号： B41J2/525 , G03B27/32 , G03B27/72 , G03G15/01 , H04N1/23
CPC分类号： G03B27/32
摘要： An image exposing device which, on the basis of image data, modulates light beams outputted from three light sources having respectively different wavelengths, and which scans/exposes the light beams onto a photosensitive material. The three light sources includes a first light source having a light-emitting peak wavelength in a vicinity of 635 nm, a second light source having a light-emitting peak wavelength in a range of 670 to 710 nm, and a third light source having a light-emitting peak wavelength in a vicinity of 780 nm. The photosensitive material includes a first photosensitive layer having a peak spectral sensitivity corresponding to the first light source, a second photosensitive layer having a peak spectral sensitivity corresponding to the second light source, and a third photosensitive layer having a peak spectral sensitivity corresponding to the third light source. A sensitivity of the first photosensitive layer with respect to the first light source is at least fifteen times a sensitivity of the second photosensitive layer with respect to the first light source, and a sensitivity of the second photosensitive layer with respect to the second light source is at least fifteen times a sensitivity of the first photosensitive layer with respect to the second light source.
摘要翻译：一种图像曝光装置，其基于图像数据调制从具有不同波长的三个光源输出的光束，并且将光束扫描/曝光到感光材料上。三个光源包括具有635nm附近的发光峰值波长的第一光源，具有670-710nm范围内的发光峰值波长的第二光源和具有670nm至710nm范围内的发光峰值波长的第三光源， 780nm附近的发光峰值波长。感光材料包括具有对应于第一光源的峰光谱灵敏度的第一感光层，具有对应于第二光源的峰光谱灵敏度的第二感光层和具有对应于第三光源的第三光谱灵敏度的第三感光层光源。第一感光层相对于第一光源的灵敏度是第二感光层相对于第一光源的灵敏度的至少十五倍，并且第二感光层相对于第二光源的灵敏度为第一感光层相对于第二光源的灵敏度的至少十五倍。

58. 发明授权

US5856994A Laser-diode-pumped solid-state laser using index-guided type multi-transverse mode broad area laser 失效
标题翻译：激光二极管泵浦固态激光器采用指数型多横模广域激光器
公开(公告)号：US5856994A
公开(公告)日：1999-01-05
申请号：US747741
申请日：1996-11-12
申请人： Toshiro Hayakawa
发明人： Toshiro Hayakawa
IPC分类号： H01S3/094 , H01S3/0941 , H01S3/131 , H01S5/00 , H01S5/223 , H01S3/091
CPC分类号： H01S3/09415 , H01S5/2231 , H01S3/1312
摘要： A laser-diode-pumped solid-state laser in which a solid-state laser crystal is pumped by a laser beam emitted from a laser diode. An index-guided type multi-transverse mode broad area laser having a single optical waveguide is used as the laser diode. This leads to reduced output variations and noise of the laser. Preferably, the front reflectivity of the laser with respect to the oscillation wavelength of the laser should be more than 20%.
摘要翻译：激光二极管泵浦的固态激光器，其中通过从激光二极管发射的激光束泵浦固态激光晶体。作为激光二极管，使用具有单个光波导的索引引导型多横模广域激光器。这导致激光器的输出变化和噪声的降低。优选地，激光器相对于激光器的振荡波长的前反射率应当大于20％。

59. 发明授权

US5608743A Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US5608743A
公开(公告)日：1997-03-04
申请号：US502637
申请日：1995-07-14
申请人： Toshiro Hayakawa
发明人： Toshiro Hayakawa
IPC分类号： H01S5/065 , H01S5/10 , H01S5/14 , H01S5/20 , H01S5/50 , H01S3/10
CPC分类号： H01S5/141 , H01S5/5018 , H01S5/065 , H01S5/1064 , H01S5/20 , H01S5/5045
摘要： A semiconductor light emitting device includes a semiconductor light amplifier, a mirror which reflects light emanating from the rear end face of the semiconductor light amplifier to return the light to the rear end face of the semiconductor light amplifier, and a band pass filter which is inserted into the optical path of the light emanating from the rear end face of the semiconductor light amplifier and has a narrow transmission wavelength band.
摘要翻译：半导体发光器件包括半导体光放大器，反射从半导体光放大器的后端面发出的光以将光返回到半导体光放大器的后端面的反射镜，以及插入的带通滤波器进入从半导体光放大器的后端面发出的光的光路，并且具有窄的透射波长带。

60. 发明授权

US5299219A Stripe-type laser diode used as a light source 失效
标题翻译：条纹型激光二极管用作光源
公开(公告)号：US5299219A
公开(公告)日：1994-03-29
申请号：US916439
申请日：1992-07-21
申请人： Toshiro Hayakawa
发明人： Toshiro Hayakawa
IPC分类号： H01S5/00 , H01S5/042 , H01S5/20 , H01S5/40 , H01S3/19
CPC分类号： H01S5/4031 , H01S5/20 , H01S5/4068
摘要： A high-power laser diode that has a wide emitting aperture and good stability to external perturbations. Structurally, the laser diode includes an array of independently-operating narrow stripe single-mode lasers coupled at each end to a single wide stripe region having a width of 30 .mu.m or more in an arrangement which minimizes phase locking.
摘要翻译：大功率激光二极管具有宽的发射孔径和对外部扰动的良好的稳定性。在结构上，激光二极管包括独立操作的窄条单模激光器的阵列，其在每端结合到具有最小化相位锁定的布置的宽度为30（m）m或更大的单宽带区域。

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