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51. 发明申请

US20070288714A1 Access control apparatus 审中-公开
标题翻译：门禁控制装置
公开(公告)号：US20070288714A1
公开(公告)日：2007-12-13
申请号：US11634100
申请日：2006-12-06
申请人： Takahiro Nakamura
发明人： Takahiro Nakamura
IPC分类号： G06F12/14
CPC分类号： H04L63/102 , G06F21/604 , G06F21/6218
摘要： An access management apparatus manages access to stored files from information processing apparatuses. The access management apparatus includes a network communication section, an access privilege policy setting section and an access control section. The network communication section has a plurality of protocols for accepting access to the files from the information processing apparatuses. The access privilege policy setting section enables one of the protocols when limitation of access to the files is started. The access control section limits access to be accepted when the one of the protocols is enabled, in accordance with settings stored in the access control section.
摘要翻译：访问管理装置管理来自信息处理装置的存储文件的访问。访问管理装置包括网络通信部分，访问权限策略设置部分和访问控制部分。网络通信部具有用于接受来自信息处理装置的文件的多个协议。访问权限策略设置部分在启动对文件访问的限制时启用其中一个协议。根据访问控制部分中存储的设置，访问控制部分限制当启用协议之一时被接受的访问。

52. 发明授权

US07306984B2 Method of manufacture of a semiconductor integrated circuit device including a plurality of columnar laminates having different spacing in different directions 有权
标题翻译：包括在不同方向上具有不同间隔的多个柱状层压体的半导体集成电路器件的制造方法
公开(公告)号：US07306984B2
公开(公告)日：2007-12-11
申请号：US11651095
申请日：2007-01-09
申请人： Tatsunori Murata , Takahiro Nakamura , Yasumichi Suzuki
发明人： Tatsunori Murata , Takahiro Nakamura , Yasumichi Suzuki
IPC分类号： H01L21/8238
CPC分类号： H01L27/11 , G11C11/412 , H01L27/0207 , H01L27/1104 , H01L29/66666 , H01L29/7827
摘要： For improving the filing properties between vertical MISFETs constituting a SRAM memory cell, the vertical MISFETs are formed over horizontal drive MISFETs and transfer MISFETs, and they are disposed with a narrow pitch in the Y direction and a wide pitch in the X direction. After a first insulating film (O3-TEOS) having good coverage is disposed over columnar laminates having a lower semiconductor layer, an intermediate semiconductor layer, an upper semiconductor layer and a silicon nitride film and a gate electrode formed over the side walls of the laminates via a gate insulating film to completely fill a narrow pitch space, a second insulating film (HDP silicon oxide film) is deposited over the first insulating film, resulting in an improvement in the filling properties, even in a narrow pitch portion, between vertical MISFETs having a high aspect ratio.
摘要翻译：为了改善构成SRAM存储单元的垂直MISFET之间的归档特性，垂直MISFET形成在水平驱动MISFET和转移MISFET之上，它们在Y方向上以窄间距设置，在X方向上具有宽间距。在具有较低覆盖度的第一绝缘膜（O 3 3 -TEOS）之后，在具有下半导体层，中间半导体层，上半导体层和氮化硅膜以及栅电极通过栅极绝缘膜形成在层叠体的侧壁上以完全填充窄的间距空间，第二绝缘膜（HDP氧化硅膜）沉积在第一绝缘膜上，导致填充性能的改善，即使在窄间距部分，具有高纵横比的垂直MISFET之间。

53. 发明授权

US07259052B2 Manufacture of a semiconductor integrated circuit device including a pluarality of a columnar laminates having different spacing in different directions 有权
标题翻译：包括具有在不同方向上具有不同间隔的柱状层压体的pluarality的半导体集成电路器件的制造
公开(公告)号：US07259052B2
公开(公告)日：2007-08-21
申请号：US10756419
申请日：2004-01-14
申请人： Tatsunori Murata , Takahiro Nakamura , Yasumichi Suzuki
发明人： Tatsunori Murata , Takahiro Nakamura , Yasumichi Suzuki
IPC分类号： H01L21/8238
CPC分类号： H01L27/11 , G11C11/412 , H01L27/0207 , H01L27/1104 , H01L29/66666 , H01L29/7827
摘要： For improving the filling properties between vertical MISFETs constituting a SRAM memory cell, the vertical MISFETs are formed over horizontal drive MISFETs and transfer MISFETs, and they are disposed with a narrow pitch in the Y direction and a wide pitch in the X direction. After a first insulating film (O3-TEOS) having good coverage is disposed over columnar laminates having a lower semiconductor layer, an intermediate semiconductor layer, an upper semiconductor layer and a silicon nitride film and a gate electrode formed over the side walls of the laminates via a gate insulating film to completely fill a narrow pitch space, a second insulating film (HDP silicon oxide film) is deposited over the first insulating film, resulting in an improvement in the filling properties, even in a narrow pitch portion, between vertical MISFETs having a high aspect ratio.
摘要翻译：为了改善构成SRAM存储单元的垂直MISFET之间的填充特性，垂直MISFET形成在水平驱动MISFET和转移MISFET之上，它们在Y方向上以窄间距设置，在X方向上具有宽间距。在具有较低覆盖度的第一绝缘膜（O 3 3 -TEOS）之后，在具有下半导体层，中间半导体层，上半导体层和氮化硅膜以及栅电极通过栅极绝缘膜形成在层叠体的侧壁上以完全填充窄的间距空间，第二绝缘膜（HDP氧化硅膜）沉积在第一绝缘膜上，导致填充性能的改善，即使在窄间距部分，具有高纵横比的垂直MISFET之间。

54. 发明授权

US07045240B2 Power generating apparatus having a proton conductor unit that includes a fullerene derivative 失效
标题翻译：具有包含富勒烯衍生物的质子导体单元的发电装置
公开(公告)号：US07045240B2
公开(公告)日：2006-05-16
申请号：US10466860
申请日：2002-01-09
申请人： Atsuo Yamada , Hisashi Kajiura , Masashi Shiraishi , Ryuichiro Maruyama , Yasuhiro Watanabe , Takahiro Nakamura , Hiroshi Miyazawa
发明人： Atsuo Yamada , Hisashi Kajiura , Masashi Shiraishi , Ryuichiro Maruyama , Yasuhiro Watanabe , Takahiro Nakamura , Hiroshi Miyazawa
IPC分类号： H01M8/10
CPC分类号： B82Y30/00 , H01M4/8605 , H01M4/90 , H01M4/92 , H01M8/04089 , H01M8/065 , H01M8/1004 , H01M8/1007 , H01M8/1016
摘要： A power generating apparatus includes a proton conductor unit, containing a fullerene derivative, a hydrogen electrode bonded to one surface of the proton conductor unit, an oxygen electrode bonded to the other surface of the proton conductor unit, and a hydrogen gas supplying unit for supplying a hydrogen gas at a pressure of approximately 0.2 to approximately 3.5 atm to the hydrogen electrode. The present power generating apparatus effectively suppresses transmission of hydrogen and oxygen gases so that it is possible to prevent the hydrogen gas from being emitted to atmosphere due to transmission as well as to prevent the oxygen gas from reaching the hydrogen electrode on transmission to prevent the hydrogen gas from being consumed without contributing to power generation.
摘要翻译：一种发电装置，包括含有富勒烯衍生物的质子导体单元，与质子导体单元的一个面接合的氢电极，与该质子导体单元的另一个表面接合的氧电极，以及供给压力为氢电极约0.2至约3.5atm的氢气。本发明的发电装置有效地抑制氢气和氧气的传输，从而可以防止氢气由于透过而被排放到大气中，并且防止氧气在透射时到达氢电极，以防止氢消耗的气体无助于发电。

55. 发明授权

US07043852B2 Measuring instrument 有权
标题翻译：测量仪器
公开(公告)号：US07043852B2
公开(公告)日：2006-05-16
申请号：US10520942
申请日：2004-06-09
申请人： Shuuji Hayashida , Yuji Fujikawa , Yuichi Ichikawa , Osamu Saito , Nobuyuki Hayashi , Takahiro Nakamura , Yuuzou Hashimoto , Tomio Omori
发明人： Shuuji Hayashida , Yuji Fujikawa , Yuichi Ichikawa , Osamu Saito , Nobuyuki Hayashi , Takahiro Nakamura , Yuuzou Hashimoto , Tomio Omori
IPC分类号： G01B3/18
CPC分类号： G01B3/18
摘要： A measuring instrument that includes a tube 21 having a female thread 211 and a spindle 3 having a lead screw 31 screwing with the female thread 211 and capable of being advanced and retracted in an axial direction along with rotation around the axial center, and measures dimensions etc. of a workpiece according to displacement in an axial direction of the spindle 3 based on a rotation amount of the spindle 3. According to this measuring instrument, a pitch P of the lead screw 31 is twice as large or more than the difference between an external diameter R and a core diameter r thereof, and the difference between the external diameter R and the core diameter r is one-fifth or less of the external diameter R. Because of the lead screw 31 with the large pitch, the spindle 3 can be moved at high speed, thus enhancing operational performance of the measuring instrument.
摘要翻译：一种测量仪器，其包括具有阴螺纹211的管21和具有与内螺纹211螺合的导螺杆31的心轴3，并且能够沿轴向方向前进和后退，同时围绕轴心旋转，并且测量尺寸根据该主轴3的旋转量，根据该主轴3的轴方向的位移而使工件相等。根据该测量仪器，导螺杆31的间距P是两倍以上外径R和芯直径r，外径R和芯直径r之差为外径R的五分之一以下。由于螺距大的螺杆31，主轴3 可以高速移动，从而提高测量仪器的运行性能。

56. 发明授权

US07013576B2 Measuring device using multi-start threaded spindle 有权
标题翻译：使用多启动螺纹主轴的测量装置
公开(公告)号：US07013576B2
公开(公告)日：2006-03-21
申请号：US10327976
申请日：2002-12-26
申请人： Shuuji Hayashida , Kouji Sasaki , Yuichi Ichikawa , Osamu Saito , Seigo Takahashi , Masamichi Suzuki , Tetsuya Nakadoi , Masahiko Tachikake , Takahiro Nakamura , Masafumi Okamoto , Yuuzou Hashimoto
发明人： Shuuji Hayashida , Kouji Sasaki , Yuichi Ichikawa , Osamu Saito , Seigo Takahashi , Masamichi Suzuki , Tetsuya Nakadoi , Masahiko Tachikake , Takahiro Nakamura , Masafumi Okamoto , Yuuzou Hashimoto
IPC分类号： G01B3/18
CPC分类号： G01B3/18
摘要： Provided is a measuring device 1 for measuring the size of an object comprising a body 2, and a spindle 3 which is screwed into the body 2 and axially advances and retracts by screwing with respect to the body 2, the measurement being based on the axial displacement of the spindle 3 effected by the revolution of the spindle, wherein the spindle is screwed into the body 2 via a multiple-start thread 31. Therefore, it is possible to displace the spindle 3 at a high speed, which improves the operability of the measuring device.
摘要翻译：提供了一种用于测量包括主体2的物体的尺寸的测量装置1和旋转到主体2中并且通过相对于主体2旋拧而轴向前进和后退的主轴3，该测量基于轴向通过主轴的旋转实现主轴3的位移，其中主轴通过多重启动螺纹31旋入主体2中。因此，可以高速地移动主轴3，这提高了测量装置的可操作性。

57. 发明申请

US20050287126A1 Ectocornea-like sheet and method of constructing the same 审中-公开
标题翻译：类角膜及其构造方法
公开(公告)号：US20050287126A1
公开(公告)日：2005-12-29
申请号：US11203965
申请日：2005-08-16
申请人： Takahiro Nakamura , Shigeru Kinoshita
发明人： Takahiro Nakamura , Shigeru Kinoshita
IPC分类号： A61L27/36 , A61L27/38 , A61L27/54 , C12N5/08 , A61K45/00
CPC分类号： A61L27/3604 , A61L27/3641 , A61L27/3666 , A61L27/3683 , A61L27/3813 , A61L27/3839 , A61L2430/16
摘要： It is intended to provide a transplantation material applicable to ocular surface diseases with a need for ectocornea transplantation (i.e., an ectocornea-like sheet). Oral mucosal epithelial cells are inoculated onto an amnion and then cultured in the coexistence of supporter cells. When a layered structure of the oral mucosal epithelial cells is formed, the outermost layer is brought into contact with air, thereby inducing differentiation. Thus, an ectocornea-like sheet having an oral mucosal epithelial cell layer on the amnion is obtained.
摘要翻译：旨在提供适用于需要外耳道移植的眼表疾病的移植材料（即外胚层样片材）。将口腔粘膜上皮细胞接种到羊膜上，然后在支持细胞共存下培养。当形成口腔粘膜上皮细胞的分层结构时，最外层与空气接触，从而诱导分化。因此，获得了在羊膜上具有口腔粘膜上皮细胞层的异齿角膜状片。

58. 发明申请

US20050086827A1 Drying machine 有权
标题翻译：烘干机
公开(公告)号：US20050086827A1
公开(公告)日：2005-04-28
申请号：US10932310
申请日：2004-09-02
申请人： Etsushi Nagae , Hiroshi Mukaiyama , Koji Ono , Masaya Tadano , Tetsuya Masuda , Kazuyoshi Tomochika , Takahiro Nakamura , Masakatsu Morishige , Harumi Takeuchi , Kiyokazu Fujikawa , Tamotsu Kawamura , Motohiko Kosano , Shinichi Akiyama , Nobuo Koumoto
发明人： Etsushi Nagae , Hiroshi Mukaiyama , Koji Ono , Masaya Tadano , Tetsuya Masuda , Kazuyoshi Tomochika , Takahiro Nakamura , Masakatsu Morishige , Harumi Takeuchi , Kiyokazu Fujikawa , Tamotsu Kawamura , Motohiko Kosano , Shinichi Akiyama , Nobuo Koumoto
IPC分类号： F25B1/00 , D06F58/02 , D06F58/20 , F25B9/00 , F25B39/04 , F26B11/02 , F26B21/04 , F26B21/08 , F28D1/047 , F28F1/32 , F25B7/00
CPC分类号： D06F58/206 , D06F58/02 , F25B9/008 , F25B2309/061 , F26B11/028 , F26B21/086 , F28D1/0477 , F28D2021/0073 , F28F1/32
摘要： A washing/drying machine has objects to shorten a time required for a washing operation, to improve a heat exchange capability in a radiator and an evaporator, and to shorten a drying time for things to be dried, and comprises: an accommodating chamber in which things to be washed (things to be dried) are accommodated and in which a drying operation of the things to be washed is performed; a refrigerant circuit in which a compressor, a gas cooler, a decompression device, an evaporator and the like are successively connected to one another in an annular form via a piping and in which carbon dioxide is used as a refrigerant and which has a supercritical pressure on a high pressure side thereof; and blower means for blowing air which has exchanged heat with the radiator into the accommodating chamber to allow the air passed through the accommodating chamber to exchange the heat with the evaporator, wherein the blower means constitutes a circulation direction of the air passed through the gas cooler, and that of the refrigerant flowing in the gas cooler in such a manner as to form a counter-flow, and constitutes a circulation direction of the air passed through the evaporator, and that of the refrigerant flowing in the evaporator in such a manner as to form a counter-flow.
摘要翻译：洗涤干燥机具有缩短洗涤操作所需时间的目的，提高散热器和蒸发器的热交换能力，缩短干燥时间的干燥时间，其特征在于，包括：容纳室，要洗涤的东西（要干燥的东西）被容纳，并且进行洗涤的物品的干燥操作; 其中压缩机，气体冷却器，减压装置，蒸发器等经由管道相互连接成环状的制冷剂回路，其中使用二氧化碳作为制冷剂，并且具有超临界压力在其高压侧; 以及鼓风机装置，其将与散热器进行热交换的空气吹送到容纳室中，以允许通过容纳室的空气与蒸发器交换热量，其中鼓风装置构成通过气体冷却器的空气的循环方向以及在气体冷却器中以形成逆流的方式流动的制冷剂的制冷剂，并构成通过蒸发器的空气的循环方向和在蒸发器中流动的制冷剂的循环方向，形成逆流。

59. 发明授权

US5936990A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US5936990A
公开(公告)日：1999-08-10
申请号：US877514
申请日：1997-06-17
申请人： Takahiro Nakamura
发明人： Takahiro Nakamura
IPC分类号： H01S5/00 , H01S5/22 , H01S5/227 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/227 , H01S5/2206 , H01S5/2226 , H01S5/2275 , H01S5/34306 , H01S5/3434
摘要： A semiconductor laser includes an active layer and a current block structure where a p-type InP layer (a first layer), an n-type InP layer (a second layer), a p-type InP layer (a third layer) and an n-type InP layer (a fourth layer) are laminated, at least one layer selected from a non-doped InP layer, an n-type InP impurity controlled layer and a p-type InP impurity controlled layer being interposed in at least one interface selected from that between the p-type InP layer (the first layer) and the n-type InP layer (the second layer) and that between the n-type InP layer (the second layer) and the p-type InP layer (the third layer); where, the n-type or p-type InP impurity controlled layer is a layer having such an n-type or p-type, respectively, impurity concentration profile in the layer that the impurity concentration continuously decreases from the n-type InP layer (the second layer) side or from the p-type InP layer (the first or the third layer) side, respectively, to the other side until the concentration of the impurity reaches equal to or below 1.times.10.sup.17 cm.sup.-3, and the n-type or p-type , respectively, InP impurity controlled layer is formed so as to be adjacent to the same type InP layer.
摘要翻译：半导体激光器包括有源层和当前块结构，其中p型InP层（第一层），n型InP层（第二层），p型InP层（第三层）和 n型InP层（第四层）层叠，选自非掺杂InP层，n型InP杂质控制层和p型InP杂质控制层中的至少一层插入至少一个界面选自p型InP层（第一层）和n型InP层（第二层）之间以及n型InP层（第二层）和p型InP层（第二层）之间第三层）; 其中，n型或p型InP杂质控制层是在杂质浓度从n型InP层连续降低的层中具有这样的n型或p型杂质浓度分布的层（第二层）侧或p型InP层（第一或第三层）侧分别延伸到另一侧，直到杂质的浓度达到等于或低于1×10 17 cm -3，并且n型或p型，分别形成InP杂质控制层，以便与相同类型的InP层相邻。

60. 发明授权

US5923688A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US5923688A
公开(公告)日：1999-07-13
申请号：US921164
申请日：1997-08-29
申请人： Takahiro Nakamura
发明人： Takahiro Nakamura
IPC分类号： H01S5/00 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/34 , H01S5/3409 , H01S5/34306
摘要： A semiconductor laser is herein disclosed which comprises an active layer 21 and SCH layers which sandwich the active layer 21 from upper and lower sides, wherein the SCH layer comprises a multi-layer structure of 2 or more layers 22,24,23,25, and this multi-layer structure is constituted so that the band gaps of the respective layers may increase as the multi-layer structure is apart from the active layer.
摘要翻译：本文公开了一种半导体激光器，其包括活性层21和从上侧和下侧夹持有源层21的SCH层，其中SCH层包括2层或更多层22,24,23,25的多层结构，并且这种多层结构被构造成使得随着多层结构离开有源层，各层的带隙可以增加。

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