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51. 发明申请

US20100164057A1 PRECURSORS FOR SILICON DIOXIDE GAP FILL 有权
标题翻译：硅二氧化硅填料的前身
公开(公告)号：US20100164057A1
公开(公告)日：2010-07-01
申请号：US12665929
申请日：2008-06-27
申请人： William Hunks , Chongying Xu , Bryan C. Hendrix , Jeffrey F. Roeder , Steven M. Bilodeau , Weimin Li
发明人： William Hunks , Chongying Xu , Bryan C. Hendrix , Jeffrey F. Roeder , Steven M. Bilodeau , Weimin Li
IPC分类号： H01L29/06 , C09D7/00 , H01L21/762
CPC分类号： H01L21/02211 , H01L21/02123 , H01L21/02164 , H01L21/02216 , H01L21/02222 , H01L21/02263 , H01L21/31604 , H01L21/31608 , H01L29/0649
摘要： A full fill trench structure comprising a microelectronic device substrate having a high aspect ratio trench therein and a full filled mass of silicon dioxide in the trench, wherein the silicon dioxide is of a substantially void-free character and has a substantially uniform density throughout its bulk mass. A corresponding method of manufacturing a semiconductor product is described, involving use of specific silicon precursor compositions for use in full filling a trench of a microelectronic device substrate, in which the silicon dioxide precursor composition is processed to conduct hydrolysis and condensation reactions for forming the substantially void-free and substantially uniform density silicon dioxide material in the trench. The fill process may be carried out with a precursor fill composition including silicon and germanium, to produce a microelectronic device structure including a GeO2/SiO2 trench fill material. A suppressor component, e.g., methanol, may be employed in the precursor fill composition, to eliminate or minimize seam formation in the cured trench fill material.
摘要翻译：一种全填充沟槽结构，其包括其中具有高纵横比沟槽的微电子器件衬底和沟槽中的完整填充质量的二氧化硅，其中二氧化硅具有基本上无空隙的特性，并且在其整个体积中具有基本均匀的密度质量描述了制造半导体产品的相应方法，其涉及使用特定的硅前体组合物，用于完全填充微电子器件衬底的沟槽，其中二氧化硅前体组合物被处理以进行水解和缩合反应，以形成基本上在沟槽中的无空隙和基本均匀的密度二氧化硅材料。填充过程可以用包括硅和锗的前体填充组合物进行，以产生包括GeO 2 / SiO 2沟槽填充材料的微电子器件结构。可以在前体填充组合物中使用抑制剂组分，例如甲醇，以消除或最小化固化沟槽填充材料中的接缝形成。

52. 发明申请

US20110195188A1 CHEMICAL VAPOR DEPOSITION OF HIGH CONDUCTIVITY, ADHERENT THIN FILMS OF RUTHENIUM 有权
标题翻译：高电导率的化学气相沉积，RENHENIUM的薄膜
公开(公告)号：US20110195188A1
公开(公告)日：2011-08-11
申请号：US13089909
申请日：2011-04-19
申请人： Bryan C. Hendrix , James J. Welch , Steven M. Bilodeau , Jeffrey F. Roeder , Chongying Xu , Thomas H. Baum
发明人： Bryan C. Hendrix , James J. Welch , Steven M. Bilodeau , Jeffrey F. Roeder , Chongying Xu , Thomas H. Baum
IPC分类号： C23C16/06 , C23C16/44 , C23C16/56 , B82Y40/00
CPC分类号： C23C16/45557 , C23C16/0272 , C23C16/16 , C23C16/18
摘要： A multi-step method for depositing ruthenium thin films having high conductivity and superior adherence to the substrate is described. The method includes the deposition of a ruthenium nucleation layer followed by the deposition of a highly conductive ruthenium upper layer. Both layers are deposited using chemical vapor deposition (CVD) employing low deposition rates.
摘要翻译：描述了一种用于沉积具有高导电性和优异的基底附着性的钌薄膜的多步法。该方法包括沉积钌成核层，随后沉积高度导电的钌上层。使用低沉积速率的化学气相沉积（CVD）沉积两层。

53. 发明授权

US07094284B2 Source reagent compositions for CVD formation of high dielectric constant and ferroelectric metal oxide thin films and method of using same 有权
标题翻译：用于高介电常数和铁电金属氧化物薄膜的CVD形成的源试剂组合物及其使用方法
公开(公告)号：US07094284B2
公开(公告)日：2006-08-22
申请号：US09907282
申请日：2001-07-17
申请人： Thomas H. Baum , Jeffrey F. Roeder , Chongying Xu , Bryan C. Hendrix
发明人： Thomas H. Baum , Jeffrey F. Roeder , Chongying Xu , Bryan C. Hendrix
IPC分类号： C23C30/00 , C23C16/40 , C07F7/28
CPC分类号： C23C16/409 , C07F7/003 , C09D1/00 , C23C16/40 , C23C16/401 , C23C16/405
摘要： Chemical vapor deposition (CVD) precursor compositions for forming metal oxide high dielectric constant (κ) thin films. The precursor composition in one embodiment comprises a metal precursor having a general formula M(β-diketonate)2(OR)2, wherein M is Hf, Zr or Ti, and R is t-butyl. The precursor composition may also comprise a solvent medium selected from the group consisting of ethers, glymes, tetraglymes, amines, polyamines, alcohols, glycols, aliphatic hydrocarbon solvents, aromatic hydrocarbon solvents, cyclic ethers, and compatible combinations of two or more of the foregoing.
摘要翻译：用于形成金属氧化物高介电常数（kappa）薄膜的化学气相沉积（CVD）前体组合物。在一个实施方案中，前体组合物包含具有通式M（β-二酮）2（OR）2 N的金属前体，其中M是Hf，Zr或Ti，以及 R是叔丁基。前体组合物还可以包含选自醚，甘氨酸，四聚体，胺，多胺，醇，二醇，脂族烃溶剂，芳族烃溶剂，环醚和前述两种或多种的相容组合的溶剂介质。

54. 发明授权

US08034407B2 Chemical vapor deposition of high conductivity, adherent thin films of ruthenium 有权
标题翻译：化学气相沉积的高导电性，粘附的钌薄膜
公开(公告)号：US08034407B2
公开(公告)日：2011-10-11
申请号：US11750134
申请日：2007-05-17
申请人： Bryan C. Hendrix , James J. Welch , Steven M. Bilodeau , Jeffrey F. Roeder , Chongying Xu , Thomas H. Baum
发明人： Bryan C. Hendrix , James J. Welch , Steven M. Bilodeau , Jeffrey F. Roeder , Chongying Xu , Thomas H. Baum
IPC分类号： C23C16/00 , C23C16/06
CPC分类号： C23C16/45557 , C23C16/0272 , C23C16/16 , C23C16/18
摘要： A multi-step method for depositing ruthenium thin films having high conductivity and superior adherence to the substrate is described. The method includes the deposition of a ruthenium nucleation layer followed by the deposition of a highly conductive ruthenium upper layer. Both layers are deposited using chemical vapor deposition (CVD) employing low deposition rates.
摘要翻译：描述了一种用于沉积具有高导电性和优异的基底附着性的钌薄膜的多步法。该方法包括沉积钌成核层，随后沉积高度导电的钌上层。使用低沉积速率的化学气相沉积（CVD）沉积两层。

55. 发明申请

US20110136343A1 COMPOSITION AND METHOD FOR LOW TEMPERATURE DEPOSITION OF SILICON-CONTAINING FILMS 有权
标题翻译：含硅薄膜低温沉积的组合物和方法
公开(公告)号：US20110136343A1
公开(公告)日：2011-06-09
申请号：US13028193
申请日：2011-02-15
申请人： Ziyun Wang , Chongying Xu , Thomas H. Baum , Bryan Hendrix , Jeffrey F. Roeder
发明人： Ziyun Wang , Chongying Xu , Thomas H. Baum , Bryan Hendrix , Jeffrey F. Roeder
IPC分类号： H01L21/283 , C07F7/02
CPC分类号： H01L21/0217 , C07F7/025 , C07F7/10 , C07F7/12 , C23C16/308 , C23C16/345 , C23C16/402 , C30B25/02 , C30B29/06 , H01L21/02219 , H01L21/02271 , H01L21/3144 , H01L21/31612 , H01L21/3185
摘要： This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g.,
摘要翻译：本发明涉及用于制造ULSI器件和器件结构的低温（例如<300℃）化学气相沉积工艺形成含硅膜的硅前体组合物。这种硅前体组合物包含至少一个完全被烷基氨基和/或二烷基氨基官能团取代的二烷基硅烷衍生物化合物。

56. 发明授权

US07910765B2 Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride 有权
标题翻译：含硅膜，例如硅，氮化硅，二氧化硅和/或硅氧氮化物的薄膜的低温沉积的组成和方法
公开(公告)号：US07910765B2
公开(公告)日：2011-03-22
申请号：US12838441
申请日：2010-07-17
申请人： Ziyun Wang , Chongying Xu , Ravi K. Laxman , Thomas H. Baum , Bryan C. Hendrix , Jeffrey F. Roeder
发明人： Ziyun Wang , Chongying Xu , Ravi K. Laxman , Thomas H. Baum , Bryan C. Hendrix , Jeffrey F. Roeder
IPC分类号： C07C7/10
CPC分类号： H01L21/0217 , C07F7/025 , C07F7/10 , C07F7/12 , C23C16/308 , C23C16/345 , C23C16/402 , C30B25/02 , C30B29/06 , H01L21/02219 , H01L21/02222 , H01L21/02271 , H01L21/0228 , H01L21/3144 , H01L21/31612 , H01L21/3185
摘要： Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SiOxNy) and/or silicon dioxide (SiO2). The precursors of the invention are amenable to use in low temperature (e.g.,
摘要翻译：半导体器件如低介电常数（k）薄膜，高k栅极硅酸盐，低温硅外延膜和含有氮化硅（Si 3 N 4），硅氧氮化物（SiO x N y）的膜的制造中的含硅膜的硅前驱体，和/或二氧化硅（SiO 2）。本发明的前体适于在低温（例如，<500℃）的化学气相沉积工艺中使用，用于制造ULSI器件和器件结构。

57. 发明申请

US20090084288A1 COMPOSITION AND METHOD FOR LOW TEMPERATURE DEPOSITION OF SILICON-CONTAINING FILMS 有权
标题翻译：含硅薄膜低温沉积的组合物和方法
公开(公告)号：US20090084288A1
公开(公告)日：2009-04-02
申请号：US12247120
申请日：2008-10-07
申请人： Ziyun Wang , Chongying Xu , Thomas H. Baum , Bryan Hendrix , Jeffrey F. Roeder
发明人： Ziyun Wang , Chongying Xu , Thomas H. Baum , Bryan Hendrix , Jeffrey F. Roeder
IPC分类号： C07F7/02 , C09D5/00
CPC分类号： H01L21/0217 , C07F7/025 , C07F7/10 , C07F7/12 , C23C16/308 , C23C16/345 , C23C16/402 , C30B25/02 , C30B29/06 , H01L21/02219 , H01L21/02271 , H01L21/3144 , H01L21/31612 , H01L21/3185
摘要： This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g.,
摘要翻译：本发明涉及通过用于制造ULSI器件和器件结构的低温（例如，<300℃）的化学气相沉积工艺形成含硅膜的硅前体组合物。这种硅前体组合物包含至少一个完全被烷基氨基和/或二烷基氨基官能团取代的二烷基硅烷衍生物化合物。

58. 发明授权

US07485611B2 Supercritical fluid-based cleaning compositions and methods 失效
标题翻译：超临界流体清洗组合物和方法
公开(公告)号：US07485611B2
公开(公告)日：2009-02-03
申请号：US10249763
申请日：2003-05-06
申请人： Jeffrey F. Roeder , Thomas H. Baum , Matthew Healy , Chongying Xu
发明人： Jeffrey F. Roeder , Thomas H. Baum , Matthew Healy , Chongying Xu
IPC分类号： H01L21/302
CPC分类号： C11D3/28 , C11D1/004 , C11D3/02 , C11D3/164 , C11D3/187 , C11D3/2072 , C11D3/2093 , C11D3/245 , C11D3/43 , C11D7/02 , C11D7/247 , C11D7/261 , C11D7/264 , C11D7/266 , C11D7/28 , C11D7/3281 , C11D7/50 , C11D11/0047 , G03F7/422 , G03F7/427 , H01L2224/16225
摘要： Compositions and methods employing supercritical fluids, e.g., supercritical carbon dioxide, for removal of unwanted material from microelectronic device structures and process equipment. One composition of such type, having utility for removing flux and solder perform surface films, includes supercritical fluid, e.g., supercritical CO2, and organic co-solvent, e.g., xylene. Another composition of such type having utility for removal of metals, metal oxides, metal-containing post-etch residues and CMP particles from semiconductor substrates includes supercritical fluid and at least one β-diketone.
摘要翻译：使用超临界流体（例如超临界二氧化碳）从微电子器件结构和工艺设备中除去不想要的材料的组合物和方法。这种类型的一种组合物，具有用于去除焊剂和焊料进行表面膜的实用性，包括超临界流体，例如超临界CO 2和有机共溶剂，例如二甲苯。具有用于从半导体衬底去除金属，金属氧化物，含金属的蚀刻后残余物和CMP颗粒的这种类型的另一种组合物包括超临界流体和至少一种β-二酮。

59. 发明授权

US07285308B2 Chemical vapor deposition of high conductivity, adherent thin films of ruthenium 有权
标题翻译：化学气相沉积的高导电性，粘附的钌薄膜
公开(公告)号：US07285308B2
公开(公告)日：2007-10-23
申请号：US10803750
申请日：2004-03-18
申请人： Bryan C. Hendrix , James J. Welch , Steven M. Bilodeau , Jeffrey F. Roeder , Chongying Xu , Thomas H. Baum
发明人： Bryan C. Hendrix , James J. Welch , Steven M. Bilodeau , Jeffrey F. Roeder , Chongying Xu , Thomas H. Baum
IPC分类号： C23C16/00
CPC分类号： C23C16/45557 , C23C16/0272 , C23C16/16 , C23C16/18
摘要： A multi-step method for depositing ruthenium thin films having high conductivity and superior adherence to the substrate is described. The method includes the deposition of a ruthenium nucleation layer followed by the deposition of a highly conductive ruthenium upper layer. Both layers are deposited using chemical vapor deposition (CVD) employing low deposition rates.
摘要翻译：描述了一种用于沉积具有高导电性和优异的基底附着性的钌薄膜的多步法。该方法包括沉积钌成核层，随后沉积高度导电的钌上层。使用低沉积速率的化学气相沉积（CVD）沉积两层。

60. 发明授权

US07208427B2 Precursor compositions and processes for MOCVD of barrier materials in semiconductor manufacturing 有权
标题翻译：半导体制造中阻挡材料的MOCVD的前体组成和工艺
公开(公告)号：US07208427B2
公开(公告)日：2007-04-24
申请号：US10643110
申请日：2003-08-18
申请人： Jeffrey F. Roeder , Chongying Xu , Bryan C. Hendrix , Thomas H. Baum
发明人： Jeffrey F. Roeder , Chongying Xu , Bryan C. Hendrix , Thomas H. Baum
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/45553 , C07F7/10 , C07F9/005 , C07F11/005 , C23C16/34 , C23C16/345 , C23C16/45525 , H01L21/28556 , H01L21/28562 , H01L21/76801 , H01L21/76841
摘要： Metalorganic precursors of the formula: (R1R2N)a−bMXb wherein: M is the precursor metal center, selected from the group of Ta, Ti, W, Nb, Si, Al and B; a is a number equal to the valence of M; 1≦b≦(a−1); R1 and R2 can be the same as or different from one another, and are each independently selected from the group of H, C1–C4 alkyl, C3–C6 cycloalkyl, and R03Si, where each R0 can be the same or different and each R0 is independently selected from H and C1–C4 alkyl; and X is selected from the group of chlorine, fluorine, bromine and iodine. Precursors of such formula are useful for chemical vapor deposition (MOCVD) of conductive barrier materials in the manufacture of microelectronic device structures, e.g., by atomic layer chemical vapor deposition on a substrate bearing nitrogen-containing surface functionality. Further described is a method of forming Si3N4 on a substrate at low temperature, e.g., using atomic layer chemical vapor deposition (ALCVD).
摘要翻译：式中的金属有机前体：<？in-line-formula description =“In-line Formulas”end =“lead”？>（R 1 R 2 N N）其中：M是前体金属中心，其选自下列的化合物：其中：M是前体金属中心， Ta，Ti，W，Nb，Si，Al和B组; a是等于M的化合价数; 1 <= b <=（A-1）; R 1和R 2可以彼此相同或不同，并且各自独立地选自H，C 1〜 C 1 -C 4烷基，C 3 -C 6环烷基和R 0〜3个 > Si，其中每个R 0可以相同或不同，并且每个R 0独立地选自H和C 1 -C 3 > 4 烷基; X选自氯，氟，溴和碘。这种配方的前体可用于制造微电子器件结构中的导电阻挡材料的化学气相沉积（MOCVD），例如通过在含有氮的表面官能团的基底上的原子层化学气相沉积。进一步描述了在低温下，例如使用原子层化学气相沉积（ALCVD）在衬底上形成Si 3 N 4 N 4的方法。

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