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    • 55. 发明授权
    • Starter motor
    • 起动马达
    • US5103107A
    • 1992-04-07
    • US615957
    • 1990-11-20
    • Kyohei YamamotoKatunori YagiTakashi Kinoshita
    • Kyohei YamamotoKatunori YagiTakashi Kinoshita
    • H01H51/06F02N11/00
    • H01H51/065
    • In a starter motor, its electromagnetic switch has a movable contact cooperating with normally open contact member and normally closed contact member, and a part of a stationary contact in the normally closed contact member is formed into a locking piece to prevent the movable contact from contacting the passage formed in the cap of the switch, or the electromagnetic switch has a first movable contact cooperating with normally open contact member and a second movable contact cooperating with normally closed contact member, and an insulating partition wall is disposed between the first and second movable contacts, whereby the creeping distance between the normally open contact member and the normally closed contact member is increased as much, and the occurrence of current leakage is prevented.
    • 在起动电动机中,其电磁开关具有与常开触点构件和常闭接触构件协作的可动触头,并且常闭触点构件中的固定触点的一部分形成锁定件,以防止可动触点接触 形成在开关盖中的通道或电磁开关具有与常开触点构件配合的第一可动触头和与常闭触头构件配合的第二可动触头,绝缘分隔壁设置在第一和第二可动 接触,由此常开接触构件和常闭接触构件之间的蠕变距离增加了很多,并且防止了电流泄漏的发生。
    • 59. 发明授权
    • Nonvolatile magnetic memory device
    • 非易失磁存储器件
    • US07933145B2
    • 2011-04-26
    • US12395814
    • 2009-03-02
    • Hajime YamagishiShoji IchikawaTakashi KinoshitaMasanori HosomiMitsuhara Shoji
    • Hajime YamagishiShoji IchikawaTakashi KinoshitaMasanori HosomiMitsuhara Shoji
    • G11C11/15
    • G11C11/1675G11C11/161
    • A nonvolatile magnetic memory device includes a magnetoresistance effect element that includes: a layered structure having a recording layer; a first wiring electrically connected to a lower part of the layered structure; a second wiring electrically connected to an upper part of the layered structure; and an interlayer insulation layer surrounding the layered structure. The magnetoresistance effect element further includes a low Young modulus region having a Young modulus lower than that of a material forming the interlayer insulation layer. The recording layer has an easy magnetization axis, and a hard magnetization axis orthogonal to the easy magnetization axis. When the magnetostriction constant λ of a material forming the recording layer is a positive value or a negative value, the low Young modulus region is disposed in an extension region of the easy magnetization axis or in an extension region of the hard magnetization axis of the recording layer, respectively.
    • 非易失性磁存储器件包括磁阻效应元件,其包括:具有记录层的层状结构; 电连接到层状结构的下部的第一布线; 电连接到层状结构的上部的第二布线; 以及围绕层状结构的层间绝缘层。 磁阻效应元件还包括具有低于形成层间绝缘层的材料的杨氏模量的低杨氏模量区域。 记录层具有容易的磁化轴和与易磁化轴正交的硬磁化轴。 当形成记录层的材料的磁致伸缩常数λ为正值或负值时,低杨氏模量区域设置在容易磁化轴的延伸区域或记录的硬磁化轴的延伸区域中 层。