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51. 发明授权

US07012353B2 Piezoelectric resonator and the method for making the same 失效
标题翻译：压电谐振器及其制造方法
公开(公告)号：US07012353B2
公开(公告)日：2006-03-14
申请号：US11054081
申请日：2005-02-08
申请人： Hirokazu Iwata
发明人： Hirokazu Iwata
IPC分类号： H01L41/107 , H03H9/15 , H03H9/205
CPC分类号： H03H9/174 , H03H3/04 , H03H9/132 , H03H9/177 , Y10T29/42
摘要： The present invention provides a method for making high-frequency piezoelectric resonators so that constants of the resonator can be measured precisely. A cavity is formed at a central section of an AT-cut crystal substrate. Two grooves are formed at predetermined distances from the left and right of the cavity, and two more grooves are formed at predetermined distances outward from these two grooves. Two more grooves perpendicular to the first set of grooves are formed. A pair of main electrodes and a pair of secondary electrodes shorted to ground and surrounding the main electrodes are disposed at roughly the center of the crystal substrate. One main electrode and one secondary electrode are used as inputs and the other main electrode and secondary electrode are used as outputs, with these two terminal pairs being used to measure and adjust a frequency.
摘要翻译：本发明提供一种制造高频压电谐振器的方法，从而可以精确地测量谐振器的常数。空穴形成在AT切割晶体基板的中心部分。两个凹槽形成在距腔的左右两个预定距离处，另外两个凹槽以这两个凹槽向外的预定距离形成。形成与第一组槽垂直的两个槽。在晶体基板的大致中央处配置有一对主电极和一对短路接地并围绕主电极的次级电极。一个主电极和一个次电极用作输入，另一个主电极和次电极用作输出，这两个端子对用于测量和调整频率。

52. 发明授权

US06294033B1 Lamination apparatus and sheet roll for use in lamination apparatus 有权
标题翻译：用于层压装置的层压装置和片材卷
公开(公告)号：US06294033B1
公开(公告)日：2001-09-25
申请号：US09346294
申请日：1999-07-02
申请人： Mutsuo Fukuoka , Hirokazu Iwata
发明人： Mutsuo Fukuoka , Hirokazu Iwata
IPC分类号： B32B3104
CPC分类号： B32B37/226 , B32B38/18 , B32B2309/70 , Y10T156/1741
摘要： The invention provides a lamination apparatus including using a sheet roll with an encoder plate secured to the end face of an adhesive sheet roll, and a slit pattern on the encoder plate being detected by a photointerruptor. In addition, a duty ratio is calculated on the basis of rectangular pulse signals output from the photointerruptor, thereby identifying the type of the adhesive sheet roll. Further, the period of the rectangular pulse signals output from the photointerruptor is compared with a predetermined value, such that the trailing edge of the adhesive sheet of the adhesive sheet roll is detected at the time point when the period is smaller than the predetermined value.
摘要翻译：本发明提供了一种层压装置，其包括使用具有固定在粘合片卷的端面上的编码器板的片材卷，并且通过光中断器检测编码器板上的狭缝图案。此外，基于从光中断器输出的矩形脉冲信号计算占空比，由此识别粘合片卷的类型。此外，从光中断器输出的矩形脉冲信号的周期与预定值进行比较，使得在周期小于预定值的时间点检测粘合片卷的粘合片的后缘。

53. 发明授权

US09365948B2 Group III nitride crystal and manufacturing method thereof 有权
标题翻译： III族氮化物晶体及其制造方法
公开(公告)号：US09365948B2
公开(公告)日：2016-06-14
申请号：US13647194
申请日：2012-10-08
申请人： Hirokazu Iwata , Seiji Sarayama , Akihiro Fuse
发明人： Hirokazu Iwata , Seiji Sarayama , Akihiro Fuse
IPC分类号： C30B29/38 , C30B9/00 , C30B29/40 , H01L21/02
CPC分类号： C30B9/00 , C30B29/403 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/02595 , H01L21/02625 , H01L21/02639 , H01L21/02647
摘要： A group III nitride crystal containing therein an alkali metal element comprises a base body, a first group III nitride crystal formed such that at least a part thereof makes a contact with the base body, the first group III nitride crystal deflecting threading dislocations in a direction different from a direction of crystal growth from the base body and a second nitride crystal formed adjacent to the first group III nitride crystal, the second nitride crystal having a crystal growth surface generally perpendicular to the direction of the crystal growth.
摘要翻译：含有碱金属元素的III族氮化物晶体包括基体，形成为使其至少一部分与基体接触的第一III族氮化物晶体，第一III族氮化物晶体沿着方向偏转穿透位错不同于从基体的晶体生长方向和与第一III族氮化物晶体相邻形成的第二氮化物晶体，第二氮化物晶体具有大致垂直于晶体生长方向的晶体生长表面。

54. 发明申请

US20150152568A1 PRODUCTION OF A GaN BULK CRYSTAL SUBSTRATE AND A SEMICONDUCTOR DEVICE FORMED ON A GaN BULK CRYSTAL SUBSTRATE 有权
标题翻译：生产GaN体积晶体衬底和形成GaN大块晶体衬底的半导体器件
公开(公告)号：US20150152568A1
公开(公告)日：2015-06-04
申请号：US14619237
申请日：2015-02-11
申请人： Seiji Sarayama , Masahiko Shimada , Hisanori Yamane , Hirokazu Iwata
发明人： Seiji Sarayama , Masahiko Shimada , Hisanori Yamane , Hirokazu Iwata
IPC分类号： C30B7/10 , C30B29/40
CPC分类号： C30B7/105 , C09K11/62 , C30B7/00 , C30B9/00 , C30B11/00 , C30B15/00 , C30B29/403 , C30B29/406 , H01L29/2003 , H01L29/7783 , Y10T117/1092 , Y10T117/1096 , Y10T428/2982
摘要： A crystal has a diameter of 1 cm or more and shows a strongest peak in cathode luminescent spectrum at a wavelength of 360 nm in correspondence to a band edge.
摘要翻译：晶体具有1cm或更大的直径，并且对应于带边缘，在360nm波长处的阴极发光光谱中显示出最强峰。

55. 发明授权

US08829530B2 Crystal producing apparatus, crystal producing method, substrate producing method, gallium nitride crystal, and gallium nitride substrate 有权
标题翻译：晶体制造装置，晶体制造方法，衬底制造方法，氮化镓晶体和氮化镓衬底
公开(公告)号：US08829530B2
公开(公告)日：2014-09-09
申请号：US13678880
申请日：2012-11-16
申请人： Seiji Sarayama , Hirokazu Iwata
发明人： Seiji Sarayama , Hirokazu Iwata
IPC分类号： H01L29/15 , H01L31/0256 , C30B9/12 , C30B23/02 , C30B25/18 , C30B9/00 , C30B29/40 , C30B17/00 , H01L29/20 , H01L21/20 , C30B25/20
CPC分类号： C30B9/00 , C30B9/12 , C30B17/00 , C30B23/025 , C30B25/18 , C30B25/20 , C30B29/403 , H01L21/20 , H01L29/2003 , Y10T117/10
摘要： A crystal producing apparatus includes a crystal forming unit and a crystal growing unit. The crystal forming unit forms a first gallium nitride (GaN) crystal by supplying nitride gas into melt mixture containing metal sodium (Na) and metal gallium (Ga). The first GaN crystal is sliced and polished to form GaN wafers. The crystal growing unit grows a second GaN crystal on a substrate formed by using a GaN wafer, by the hydride vapor phase epitaxy method, thus producing a bulked GaN crystal.
摘要翻译：晶体制造装置包括晶体形成单元和晶体生长单元。晶体形成单元通过向含有金属钠（Na）和金属镓（Ga）的熔融混合物供给氮化物而形成第一氮化镓（GaN）晶体。将第一GaN晶体切片并抛光以形成GaN晶片。晶体生长单元通过氢化物气相外延法在通过使用GaN晶片形成的衬底上生长第二GaN晶体，从而产生膨胀的GaN晶体。

56. 发明授权

US08554160B2 AM transmitter and modulation method using same 有权
标题翻译： AM发射机和调制方法使用相同
公开(公告)号：US08554160B2
公开(公告)日：2013-10-08
申请号：US12130709
申请日：2008-05-30
申请人： Shin-ichi Matsuo , Hirokazu Iwata , Fuminori Kinugawa
发明人： Shin-ichi Matsuo , Hirokazu Iwata , Fuminori Kinugawa
IPC分类号： H03C1/52 , H01Q11/12 , H04B1/04
CPC分类号： H03C1/36
摘要： An AM (Amplitude-Modulated) transmitter capable of improving modulation distortion is provided. An adder adds a modulation signal to a pre-set power reference signal. An APC (Automatic Power Control) amplifier compares a level of a detecting signal outputted by the LPF (Low Pass Filter) with a level of an adder signal. The APC amplifier, based on the comparison result, generates a gain controlling signal that makes a difference between a level of the detecting signal and level of the signal approach zero and feeds the gain controlling signal to a power amplifier. The power amplifier modulates the signal outputted from the amplifier by the gain controlling signal and power-amplifies the modulated signal according to a level of the gain controlling signal. Since the APC amplifier feeds the gain controlling signal to the power amplifier, a modulation degree does not depend on a nonlinear distortion characteristic of the power amplifier.
摘要翻译：提供能够改善调制失真的AM（调幅调制）发射机。加法器将调制信号加到预设的功率参考信号上。 APC（自动功率控制）放大器将由LPF（低通滤波器）输出的检测信号的电平与加法器信号的电平进行比较。基于比较结果的APC放大器产生增益控制信号，其使得检测信号的电平和信号的电平接近零之间的差异，并将增益控制信号馈送到功率放大器。功率放大器通过增益控制信号来调制从放大器输出的信号，并根据增益控制信号的电平对调制信号进行功率放大。由于APC放大器将增益控制信号馈送到功率放大器，调制度不取决于功率放大器的非线性失真特性。

57. 发明授权

US08337798B2 Crystal producing apparatus, crystal producing method, substrate producing method, gallium nitride crystal, and gallium nitride substrate 有权
标题翻译：晶体制造装置，晶体制造方法，衬底制造方法，氮化镓晶体和氮化镓衬底
公开(公告)号：US08337798B2
公开(公告)日：2012-12-25
申请号：US11906285
申请日：2007-10-01
申请人： Seiji Sarayama , Hirokazu Iwata
发明人： Seiji Sarayama , Hirokazu Iwata
IPC分类号： C01B21/06 , C30B25/02
CPC分类号： C30B9/00 , C30B9/12 , C30B17/00 , C30B23/025 , C30B25/18 , C30B25/20 , C30B29/403 , H01L21/20 , H01L29/2003 , Y10T117/10
摘要： A crystal producing apparatus includes a crystal forming unit and a crystal growing unit. The crystal forming unit forms a first gallium nitride (GaN) crystal by supplying nitride gas into melt mixture containing metal sodium (Na) and metal gallium (Ga). The first GaN crystal is sliced and polished to form GaN wafers. The crystal growing unit grows a second GaN crystal on a substrate formed by using a GaN wafer, by the hydride vapor phase epitaxy method, thus producing a bulked GaN crystal.
摘要翻译：晶体制造装置包括晶体形成单元和晶体生长单元。晶体形成单元通过向含有金属钠（Na）和金属镓（Ga）的熔融混合物供给氮化物而形成第一氮化镓（GaN）晶体。将第一GaN晶体切片并抛光以形成GaN晶片。晶体生长单元通过氢化物气相外延法在通过使用GaN晶片形成的衬底上生长第二GaN晶体，从而产生膨胀的GaN晶体。

58. 发明授权

US08337617B2 Manufacturing method and manufacturing apparatus of a group III nitride crystal 有权
标题翻译： III族氮化物晶体的制造方法和制造装置
公开(公告)号：US08337617B2
公开(公告)日：2012-12-25
申请号：US11596250
申请日：2006-03-13
申请人： Hirokazu Iwata , Seiji Sarayama , Minoru Fukuda , Tetsuya Takahashi , Akira Takahashi
发明人： Hirokazu Iwata , Seiji Sarayama , Minoru Fukuda , Tetsuya Takahashi , Akira Takahashi
IPC分类号： C30B9/00
CPC分类号： C30B19/02 , C30B9/00 , C30B15/00 , C30B15/32 , C30B17/00 , C30B19/06 , C30B29/403 , C30B29/406 , Y10T117/1024 , Y10T117/1032
摘要： A method for manufacturing a group III nitride crystal on a seed crystal in a holding vessel holding therein a melt containing a group III metal, an alkali metal and nitrogen. The manufacturing method comprises the steps of causing the seed crystal to make a contact with the melt, setting an environment of the seed crystal to a first state offset from a crystal growth condition while in a state in which said seed crystal is in contact with the melt, increasing a nitrogen concentration in the melt, and setting the environment of the seed crystal to a second state suitable for crystal growth when the nitrogen concentration of the melt has reached a concentration suitable for growing the seed crystal.
摘要翻译：一种用于在保持容器中的晶种上制造III族氮化物晶体的方法，其中容纳含有III族金属，碱金属和氮的熔体。该制造方法包括以下步骤：使晶种与熔体接触，将晶种的环境设定为偏离晶体生长条件的第一状态，同时在所述晶种与所述晶种接触的状态下熔融，增加熔体中的氮浓度，并且当熔体的氮浓度达到适于种植晶种的浓度时，将晶种的环境设定为适合晶体生长的第二状态。

59. 发明授权

US08323404B2 Group III nitride crystal and manufacturing method thereof 有权
标题翻译： III族氮化物晶体及其制造方法
公开(公告)号：US08323404B2
公开(公告)日：2012-12-04
申请号：US11561662
申请日：2006-11-20
申请人： Hirokazu Iwata , Seiji Sarayama , Akihiro Fuse
发明人： Hirokazu Iwata , Seiji Sarayama , Akihiro Fuse
IPC分类号： C30B7/14
CPC分类号： C30B9/00 , C30B29/403 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/02595 , H01L21/02625 , H01L21/02639 , H01L21/02647
摘要： A group III nitride crystal containing therein an alkali metal element comprises a base body, a first group III nitride crystal formed such that at least a part thereof makes a contact with the base body, the first group III nitride crystal deflecting threading dislocations in a direction different from a direction of crystal growth from the base body and a second nitride crystal formed adjacent to the first group III nitride crystal, the second nitride crystal having a crystal growth surface generally perpendicular to the direction of the crystal growth.
摘要翻译：含有碱金属元素的III族氮化物晶体包括基体，形成为使其至少一部分与基体接触的第一III族氮化物晶体，第一III族氮化物晶体沿着方向偏转穿透位错不同于从基体的晶体生长方向和与第一III族氮化物晶体相邻形成的第二氮化物晶体，第二氮化物晶体具有大致垂直于晶体生长方向的晶体生长表面。

60. 发明授权

US08101020B2 Crystal growth apparatus and manufacturing method of group III nitride crystal 有权
标题翻译：晶体生长装置及III族氮化物晶体的制造方法
公开(公告)号：US08101020B2
公开(公告)日：2012-01-24
申请号：US11546989
申请日：2006-10-13
申请人： Seiji Sarayama , Hirokazu Iwata , Akihiro Fuse
发明人： Seiji Sarayama , Hirokazu Iwata , Akihiro Fuse
IPC分类号： C30B9/00 , C30B11/00
CPC分类号： C30B9/12 , C30B9/00 , C30B9/10 , C30B17/00 , C30B19/02 , C30B19/062 , C30B19/106 , C30B29/40 , C30B29/403 , C30B29/406 , Y10T117/1092
摘要： A crystal growth apparatus comprises a reaction vessel holding a melt mixture containing an alkali metal and a group III metal, a gas supplying apparatus supplying a nitrogen source gas to a vessel space exposed to the melt mixture inside the reaction vessel, a heating unit heating the melt mixture to a crystal growth temperature, and a support unit supporting a seed crystal of a group III nitride crystal inside the melt mixture.
摘要翻译：晶体生长装置包括保持含有碱金属和III族金属的熔融混合物的反应容器，向暴露于反应容器内的熔融混合物的容器空间供给氮源气体的供气装置，加热单元熔融混合物至晶体生长温度，以及支撑单元，其在熔融混合物内支撑III族氮化物晶体的籽晶。

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